DE571884C - Process for the production of dry solid rectifier cells, especially those for high power - Google Patents
Process for the production of dry solid rectifier cells, especially those for high powerInfo
- Publication number
- DE571884C DE571884C DEP61147D DEP0061147D DE571884C DE 571884 C DE571884 C DE 571884C DE P61147 D DEP61147 D DE P61147D DE P0061147 D DEP0061147 D DE P0061147D DE 571884 C DE571884 C DE 571884C
- Authority
- DE
- Germany
- Prior art keywords
- conductive
- production
- high power
- especially those
- dry solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000007787 solid Substances 0.000 title claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000004763 sulfides Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical class [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002736 metal compounds Chemical group 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- MFIWAIVSOUGHLI-UHFFFAOYSA-N selenium;tin Chemical compound [Sn]=[Se] MFIWAIVSOUGHLI-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Description
Verfahren zur Herstellung von trockenen festen Gleichrichterzellen, insbesondere solchen für hohe Leistungen Bei den bisher bekanntgewordenen Trokkengleichrichterzellen ist. die Gleichrichtung an eine schlecht leitende Trennschicht gebunden, die angeordnet ist zwischen einer Metallelektrode und einem schlechter als diese leitenden Stoffe, meist einer metallisch leitenden Verbindung. Diese Trennschicht wurde bisher erzeugt entweder vor dem Zusammenbau durch chemische oder elektrochemische Behandlung der besser leitenden (metallischen) Elektrode oder nach dem Zusammenbau durch Einwirkung des Stoffes der metallischen Elektrode auf den der schlechter leitenden Elektrode.Process for the manufacture of dry solid rectifier cells, in particular those for high performance in the previously known dry rectifier cells is. the rectification tied to a poorly conductive separating layer that arranged is between a metal electrode and a material that is inferior to these conductive materials, usually a metallically conductive connection. This separating layer has been created up to now either before assembly by chemical or electrochemical treatment of the better conductive (metallic) electrode or after assembly by action the substance of the metallic electrode on that of the less conductive electrode.
Es war bisher außerordentlich schwierig, die Trennschicht mit der Schicht des schlechter leitenden Stoffes in die erforderliche gute Berührung zu bringen. Dies machte sich besonders dann bemerkbar, wenn Platten für größere Leistungen hergestellt wejrden sollten.Up to now it has been extremely difficult to apply the separating layer to the Layer the poorly conductive material in the required good contact bring. This was especially noticeable when plates for larger performances should be manufactured.
Es hat sich nun gezeigt, daß man diesen Übelstand beseitigen und gute Gleichrichterplatten für hohe Spannungen und große Stromstärken herstellen kann, wenn man die die Gleichrichtung bewirkende, vor dem Zusammenbau der Teile des Gleichrichters auf der schlechter leitenden der beiden Elektroden zu bildende Trennschicht, die zweckmäßig aus einer metallisch leitenden Verbindung besteht, durch Einwirkung gasförmiger oder flüssiger Reaktionsmittel erzeugt.It has now been shown that this evil can be eliminated and good Can produce rectifier plates for high voltages and large currents, if you do the rectification, before assembling the parts of the rectifier on the less conductive of the two electrodes to be formed separating layer, the expediently consists of a metallically conductive compound, by the action of gaseous or liquid reactant generated.
Es wurde zwar auch schon vorgeschlagen, vor dem Zusammenbau der Teile des Gleichrichters durch Wärmebehandlung Umlagerungen der Bestandteile der schlechter leitenden Elektrode hervorzurufen, und zwar sollen in diesem Falle der Elektrode beigemischte Stoffe durch diese Wärmebehandlung an die Oberfläche gelangen oder sich durch Verdampfung eines Bestandteiles der Elektrode dort anreichern. Demgegenüber ist das den Gegenstand der Erfindung bildende Verfahren, bei welchem die Trennschicht auf der schlechter leitenden Elektrode durch die Einwirkung gasförmiger oder flüssiger Stoffe von außen her erfolgt, deswegen vorteilhafter, weil man chemische Reaktionen leichter leiten kann als Diffusionsvorgänge oder Entmischungs- oder Verdampfungsvorgänge bei festen Stoffen. Die Erzielung einer gleichmäßigen Trennschicht besonders bei Herstellung größerer Stückzahlen von Gleichrichterplatten ist somit nach dem neuen Verfahren wesentlich einfacher.While it has also been suggested before assembling the parts the rectifier by heat treatment rearrangements of the components of the worse cause conductive electrode, and in this case the electrode mixed substances get to the surface as a result of this heat treatment or accumulate there through evaporation of a component of the electrode. In contrast is the subject of the invention process in which the separating layer on the less conductive electrode due to the action of gaseous or liquid Substances are made from the outside, therefore more advantageous because one has chemical reactions can conduct more easily than diffusion processes or segregation or evaporation processes with solid substances. Achieving a uniform separating layer especially with Production of larger numbers of rectifier plates is thus after the new Procedure much easier.
Bei der neuen Herstellungsart reagiert die ganze Fläche der von dem Reaktionsmittel umspülten metallisch leitenden Verbindung, und es ist durch diese Art der Behandlung die gleichmäßige innige Berührung der Trennschicht mit dem schlecht leitenden Körper, in den meisten Fällen also einer metallisch leitenden Verbindung, gewährleistet. Die Dicke der Schicht ist hierbei durch die Zeit und die Temperatur regelbar, je nach der gewünschten Spannungsfestigkeit und Stromstärke. Es sind eine ganze Reihe von solchen leitenden Verbindungen brauchbar, wie Sulfide, Selenide, Oxyde, Nitride. Carbide. Die Sulfide und Selenide werden nach dein Verfahren oberflächlich in Oxyde übergeführt, die niederen Oxyde in . höhere, die Nitride und Carbide ebenfalls in Oxyde. Das einfachste Behandlungsverfahren ist die Oxydation mit Sauerstoff oder Luft bei bestimmter Temperatur. Es können natürlich auch alle anderen chemischen oder elektrochemischen Oxydationsverfahren angewendet werden. Man kann z. B. Wolframdisulfid oder Molybdändisulfid auf der Oberfläche zu Wolframtrioxyd oder Molyb@däntrioxyd oxydieren. Diese Oxyde leiten schlecht und eignen sich gut zu Trennschichten in festen Gleichrichtern. Auf Platten aus Zinnselenid oder Kupferselenid, Eisenoxyduloxyd, Wolframpentoxyd, Kupferoxydul, Zirkonnitrid, Titannitrid, Tantalcarbid, Niobcarbid kann man durch Oxydation schlecht leitende Oxydschichten, entsprechend bestehend aus Zinndioxyd, Kupferoxyd, Eisentrioxyd, Wolframtrioxvd, Kupferoxyd, Zirkonoxyd, Titanoxyd, Tantalpentoxyd und Niobpentoxyd erhalten, die sich ebenfalls gut als Trennschichten eignen. Man ist selbstverständlich nicht an oxydische Trennschichten gebunden, sondern kann auch andere Trennschichten aus anderen Verbindungen erzeugen. So kann man z. B. auf Kadmiumoxydplatten durch Schwefelwasserstoff oder Schwefeldampf das schlecht leitende Cadmiumsulfid als Trennschicht erzeugen. Bei allen angeführten Beispielen wächst mit der Reaktionszeit die Schichtdicke der schlecht leitenden Verbindung, so daß man aus diesen Platten mit größeren Schichtdicken Gleichrichterzellen mit sehr großer Spannungsfestigkeit herstellen kann.With the new production method, the whole area of the reacts Reactants surrounded by metallic conductive connection, and it This type of treatment means that the separating layer is evenly and intimately touched with the poorly conductive body, in most cases a metallic conductive one Connection, guaranteed. The thickness of the layer is here by the time and the temperature can be regulated, depending on the desired dielectric strength and amperage. A number of such conductive compounds are useful, such as sulfides, Selenides, oxides, nitrides. Carbides. The sulfides and selenides are made according to your procedure superficially converted into oxides, the lower oxides into. higher, the nitrides and carbides also in oxides. The simplest treatment method is oxidation with oxygen or air at a certain temperature. Of course, everyone can do it too other chemical or electrochemical oxidation processes are used. You can z. B. tungsten disulfide or molybdenum disulfide on the surface to tungsten trioxide or oxidize molybdenum trioxide. These oxides are poor conductors and work well to separating layers in fixed rectifiers. On plates made of tin selenide or copper selenide, Iron oxide, tungsten oxide, copper oxide, zirconium nitride, titanium nitride, tantalum carbide, Niobium carbide can be made of poorly conductive oxide layers by oxidation, accordingly consisting of tin dioxide, copper oxide, iron trioxide, tungsten trioxide, copper oxide, Zirconium oxide, titanium oxide, tantalum pentoxide and niobium pentoxide, which are also obtained good as separating layers. Obviously, you are not on oxidic separating layers bound, but can also create other separating layers from other compounds. So you can z. B. on cadmium oxide plates by hydrogen sulfide or sulfur vapor generate the poorly conductive cadmium sulfide as a separating layer. With all of the above Examples grow with the reaction time, the layer thickness of the poorly conductive Connection, so that one from these plates with larger layer thicknesses rectifier cells can produce with very high dielectric strength.
Auch durch Einwirkung alkalischer oder saurer Lösungen, z.-B. von Permanganaten, Persulfaten, Chromaten u.dgl:, kann man Sulfide oberflächlich in Oxyde oder niedere Oxyde in höhere Oxyde verwandeln und auf diese Weise ebenfalls sehr dicht anliegende Trennschichten von guter Gleichrichterwirkung erzeugen.Also by the action of alkaline or acidic solutions, e.g. from Permanganates, persulfates, chromates and the like: one can find sulfides superficially in Convert oxides or lower oxides into higher oxides and in this way also create very close-fitting separating layers with a good rectifying effect.
Je nachdem, ob die Platten ein- oder zweiseitig mit Trennschichten versehen werden, können sie in an sich bekannter Weise zu Einweg- oder Zweiweggleichrichtern verwendet werden. Es bietet bei allen angeführten und auch anderen geeigneten schlecht leitenden Stoffen oder Verbindungen keine Schwierigkeiten, Platten oder andere Körper von beliebiger Form mit großen Oberflächen herzustellen für hohe Strombelastung. Man kann z. B. auf großen Blechen die Verbindung unmittelbar durch Reaktion mit entsprechenden Metalloiden erzeugen, wobei das Metallblech dann den einen Bestandteil der Verbindung liefert.Depending on whether the panels are one-sided or two-sided with separating layers are provided, they can be converted into one-way or two-way rectifiers in a manner known per se be used. It offers bad for all of the listed and also other suitable ones Conductive fabrics or connections do not have difficulties, panels or other bodies of any shape with large surfaces for high current loads. You can z. B. on large sheets the connection directly by reaction with generate corresponding metalloids, the metal sheet then the one component the connection delivers.
Es bestehen keine Schwierigkeiten, diese so erzeugten Trennschichten mit der gut leitenden metallischen Elektrode in Berührung zu bringen. Man kann z. B. in bekannter Weise durch Aufschmelzen oder Aufspritzen von geeigneten Metallen oder Metalllegierungen auf die dünne .schlecht leitende Schicht eine ganz gleichförmige gute Berührung herstellen.There are no difficulties with these separating layers produced in this way to bring into contact with the highly conductive metallic electrode. You can z. B. in a known manner by melting or spraying suitable metals or metal alloys on the thin. poorly conductive layer a completely uniform make good touch.
Das neue Verfahren bietet zunächst den sehr großen Vorteil, daß man nicht wie bisher an eine bestimmte wirksame Metallelektrode gebunden ist, die mit der anliegenden Metallverbindung die Zwischenschicht bildet oder durch chemische oder elektrochemische Einwirkung mit einer Trennschicht überzogen wird, sondern daß man als Elektrode alle die Metalle und Legierungen verwenden kann, die die Trennschicht nicht angreifen, d. h. man kann beliebige Metalle oder Legierungen, gegebenenfalls sogar Edelmetalle als wirksame Elektroden verwenden. Die Verwendung von Edelmetallelektroden kann dort von großer Bedeutung sein, wo feste Gleichrichterzellenwährend des Betriebes nicht vor dem Angriff reaktionsfähiger Gase oder Dämpfe geschützt werden können oder auch dort, wo man bei Verwendung von temperaturbeständigen, metallisch leitenden Verbindungen und Trennschichten bei . hohen Temperaturen arbeitet, bei denen unedle Metallelektroden bald zerstört werden.The new method offers the very great advantage that one is not bound to a specific effective metal electrode, as was previously the case, with the adjacent metal compound forms the intermediate layer or by chemical means or electrochemical action is coated with a separating layer, but that all the metals and alloys that make up the separating layer can be used as the electrode do not attack, d. H. any metals or alloys can be used, if appropriate even use precious metals as effective electrodes. The use of precious metal electrodes can be of great importance where fixed rectifier cells are in operation cannot be protected from attack by reactive gases or vapors or even where you need to use temperature-resistant, metallically conductive Connections and separating layers. high temperatures works at which base Metal electrodes will soon be destroyed.
Außerdem ist durch das vorliegende Ver= fahren die Anwendung von Stoffen von sehr geringem Widerstand und außerordentlich großer Beständigkeit gegen chemische Einflüsse und Temperatureinflüsse für die Zusammenstellung von Trockengleichrichterzellen überhaupt erst möglich geworden. Hierher gehören Verbindungen, wie -z. B. Cd O, Nb C Zr N, Ta C oder Ti N. Der spezifische Widerstand dieser Stoffe beträgt et-,va 5 # 1o-3 Ohm für den Zentimeterwürfel (vgl. E. F r i e d e r i c h, Zeitschrift für Physik 3.1 (19z5], 8i3). infolge des geringen Spannungsverlustes in aus solchen Stoffen hergestellten Platten haben daraus hergestellte Gleichrichter einen sehr großen Wirkungsgrad.In addition, the present process enables the use of substances of very low resistance and extremely high resistance to chemical Influences and temperature influences for the assembly of dry rectifier cells became possible in the first place. This subheading includes compounds such as -z. B. Cd O, Nb C Zr N, Ta C or Ti N. The specific resistance of these substances is et-, va 5 # 1o-3 ohms for the centimeter cube (see E. F r i e d e r i c h, magazine for physics 3.1 (19z5], 8i3). due to the low voltage loss in from such Plates made from materials have a very good rectifier great efficiency.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP61147D DE571884C (en) | 1929-09-03 | 1929-09-04 | Process for the production of dry solid rectifier cells, especially those for high power |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP0061147 | 1929-09-03 | ||
| DEP61147D DE571884C (en) | 1929-09-03 | 1929-09-04 | Process for the production of dry solid rectifier cells, especially those for high power |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE571884C true DE571884C (en) | 1933-03-07 |
Family
ID=25990891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEP61147D Expired DE571884C (en) | 1929-09-03 | 1929-09-04 | Process for the production of dry solid rectifier cells, especially those for high power |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE571884C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE754795C (en) * | 1936-10-19 | 1952-10-13 | Siemens Schuckertwerke A G | Process for the manufacture of selenium rectifiers |
-
1929
- 1929-09-04 DE DEP61147D patent/DE571884C/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE754795C (en) * | 1936-10-19 | 1952-10-13 | Siemens Schuckertwerke A G | Process for the manufacture of selenium rectifiers |
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