DE531489C - Process for the production of plates for copper oxide rectifiers - Google Patents

Process for the production of plates for copper oxide rectifiers

Info

Publication number
DE531489C
DE531489C DES77930D DES0077930D DE531489C DE 531489 C DE531489 C DE 531489C DE S77930 D DES77930 D DE S77930D DE S0077930 D DES0077930 D DE S0077930D DE 531489 C DE531489 C DE 531489C
Authority
DE
Germany
Prior art keywords
plates
water
production
copper oxide
oxide rectifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES77930D
Other languages
German (de)
Inventor
Emil Duhme
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DES76800D priority Critical patent/DE529304C/en
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to DES77930D priority patent/DE531489C/en
Priority to FR644821D priority patent/FR644821A/en
Application granted granted Critical
Publication of DE531489C publication Critical patent/DE531489C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Heat Treatments In General, Especially Conveying And Cooling (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Description

Verfahren zur Herstellung von Platten für Kupferoxyd-Gleichrichter Im Hauptpatent 529 3o4 ist ein Verfahren zur Herstellung von Platten für Kupferoxyd-Gleichrichter beschrieben, das sich durch große Güte der damit erzielten Oxydsclicht auszeichnet. Im nachfolgenden sollen noch einige Verbesserungen dieses Verfahrens angegeben werden.Process for the production of plates for copper oxide rectifiers The main patent 529 304 describes a process for the production of plates for copper oxide rectifiers described, which is characterized by the high quality of the Oxydsclicht achieved with it. In the following, some improvements to this process will be indicated.

Es hat sich gezeigt, daß die geeignete Temperatur des erwärmten Wassers; in das die Platten nach -ihrer Erhitzung gebracht werden, mit der Größe der Platten zusammenhängt. Geht man mit der Wassertemperatur unter eine gewisse untere oder über eine gewisse obere Grenze hinaus, so wird die Oxydschicht schlechter. Die im Hauptpatent angegebenen Temperaturen von 4o bis 6o° C eignen sich für Platten mittlerer Größe (etwa 3 bis 5 cm Durchmesser), und zwar die niedrigste Temperatur für die größten Platten und umgekehrt. Bei ganz kleinen Platten (unter 2 cm Durchmesser) kann man die Temperatur des Wassers unbedenklich bis etwa 70° C erhöhen.It has been found that the appropriate temperature of the heated water; into which the plates are placed after they have been heated, with the size of the plates related. If you go with the water temperature below a certain lower or beyond a certain upper limit, the oxide layer deteriorates. The in Temperatures of 4o to 6o ° C specified in the main patent are suitable for medium-sized plates Size (about 3 to 5 cm in diameter), and the lowest temperature for that largest panels and vice versa. For very small plates (less than 2 cm in diameter) the temperature of the water can be safely increased to around 70 ° C.

Man kann ferner die Dauer des Herstellungsverfahrens abkürzen und dadurch seine Leistungsfähigkeit erhöhen, indem man folgendermaßen vorgeht: Man bringt die Platten in einen Ofen, dessen Temperatur auf einem bestimmten, oberhalb 104o° C liegenden Wert gehalten wird, und probiert die Zeit aus, die erforderlich ist, um die Platten bis auf diese Temperatur zu erhitzen. Wenn die Platten während der so festgestellten Dauer in dem Ofen waren, so kann man sie mit einer Zange oder einem Haken herausnehmen und sofort einzeln; am besten unter Umschwenken, ins Wasser tauchen. Man kann jedoch auch die Berührung der Platten mit dem Metall des Hakens oder der Zange und die daraus möglicherweise entstehenden Schädigungen vermeiden, indem man nach einer gewissen Zeit die Platten durch einen besonderen Handgriff - unter Umständen auch selbsttätig aus dem Ofen in das Wasser wirft.One can also shorten the duration of the manufacturing process and thereby increasing one's efficiency by doing the following: Man puts the plates in an oven whose temperature is at a certain, above 104o ° C is maintained and tries the time that is required is to heat the plates up to this temperature. If the panels during the time determined in this way have been in the oven, they can be removed with a pair of tongs or take out a hook and immediately one at a time; best of all by turning it around, into the water dive. However, you can also touch the plates with the metal of the hook or the pliers and avoid the damage that may result from them, by moving the panels with a special handle after a certain period of time - Throws it automatically out of the oven into the water.

Es ist zweckmäßig, die Platten', ehe sie zu Boden fallen, einige Sekunden lang allseitig mit denn Wasser in Berührung zu erhalten. Dies läßt sich entweder durch das schon erwähnte Umschwenken oder auch durch eine künstlich erzeugte Wasserbewegung erreichen. Man kann indessen auf beides verzichten, wenn man die Tiefe des wassergefüllten Gefäßes so wählt, daß die Platten, die man frei in das Wasser hineinfallen_läßt, infolge des Reibungswiderstandes des Wassers d. h. je nach ihrer Dicke zwei oder mehr Sekunden, brauchen, ehe sie -den - Boden "des Gefäßes erreichen. Durch die zuletzt erwähnten Mittel wird eine ungleichmäßige Abkühlung der Platten und die Ausbildung unerwünschter Spannungen vermieden. - `It is advisable to 'hold the plates' for a few seconds before they fall to the ground long to keep in contact with the water on all sides. You can either by the already mentioned swiveling or by an artificially generated water movement reach. One can, however, do without both if one considers the depth of the water-filled The vessel so that the plates which one lets fall freely into the water, due to the frictional resistance of the water d. H. depending on their thickness, two or It takes more seconds before they reach the bottom of the vessel The last mentioned means is an uneven cooling of the plates and the Avoided formation of undesirable tensions. - `

Claims (3)

PATENTANSPRÜCHE: z. Verfahren zur Herstellung 'von Platten für Kupferoxyd-Gleichrichter nach Patent 529 304, dadurch.- daß je nach der Größe .der herzustellenden Platten ,die Temperatur des Wassers zwischen 4o bis 7o° C ,gehalten wird, und daß für die kleinsten Platten (unter a cm Durchmesser) die höchsten und für die größten Platten (4 bis 5 cm Durchmesser) die niedrigsten Temperaturwerte gelten. PATENT CLAIMS: e.g. Process for the production of plates for copper oxide rectifiers according to patent 529 304, characterized in that depending on the size of the plates to be produced , the temperature of the water between 4o to 7o ° C, and that for the smallest plates (less than a cm in diameter) the highest and for the largest plates (4 to 5 cm in diameter) the lowest temperature values apply. 2. Verfahren nach Anspruch r, dadurch gekennzeichnet, daß die Platten nach dem Erhitzen einzeln oder zu mehreren unter Umschwenken oder künstlicher Wasserbewegung je nach ihrer Dicke zwei oder mehr Sekunden allseitig mit dem Wasser in Berührung gehalten werden. 2. Procedure according to Claim r, characterized in that the plates after heating individually or to several with swiveling or artificial water movement depending on their thickness be kept in contact with the water on all sides for two or more seconds. 3. Verfahren nach Anspruch z oder z, dadurch gekennzeichnet, daß man die Platten nach dem Erhitzen in ein Wassergefülltes Gefäß von solcher Tiefe fallen läßt, daß sie infolge des Reibungswiderstandes des Wassers genügend lange brauchen, ehe sie den Boden des Gefäßes erreichen.3. Method according to claim z or z, characterized in that the plates are after drops after heating into a vessel filled with water to such a depth that it Due to the frictional resistance of the water, it takes a long enough time before the Reach the bottom of the vessel.
DES77930D 1926-11-01 1927-01-14 Process for the production of plates for copper oxide rectifiers Expired DE531489C (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DES76800D DE529304C (en) 1926-11-01 1926-11-01 Process for the production of plates for copper oxide rectifiers
DES77930D DE531489C (en) 1926-11-01 1927-01-14 Process for the production of plates for copper oxide rectifiers
FR644821D FR644821A (en) 1926-11-01 1927-10-29 Process for manufacturing plates for copper oxide rectifiers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES76800D DE529304C (en) 1926-11-01 1926-11-01 Process for the production of plates for copper oxide rectifiers
DES77930D DE531489C (en) 1926-11-01 1927-01-14 Process for the production of plates for copper oxide rectifiers

Publications (1)

Publication Number Publication Date
DE531489C true DE531489C (en) 1931-08-10

Family

ID=27212744

Family Applications (2)

Application Number Title Priority Date Filing Date
DES76800D Expired DE529304C (en) 1926-11-01 1926-11-01 Process for the production of plates for copper oxide rectifiers
DES77930D Expired DE531489C (en) 1926-11-01 1927-01-14 Process for the production of plates for copper oxide rectifiers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DES76800D Expired DE529304C (en) 1926-11-01 1926-11-01 Process for the production of plates for copper oxide rectifiers

Country Status (2)

Country Link
DE (2) DE529304C (en)
FR (1) FR644821A (en)

Also Published As

Publication number Publication date
DE529304C (en) 1931-07-11
FR644821A (en) 1928-10-15

Similar Documents

Publication Publication Date Title
DE2043676A1 (en) Process for the production of bimetal bearings
DE531489C (en) Process for the production of plates for copper oxide rectifiers
DE1120155B (en) Uranium alloy and method of heat treating the same
DE391368C (en) Method and device for hardening and cooling workpieces
DE481505C (en) Compensation for copper-magnesium alloys
DE508155C (en) Process for producing fine-grained recrystallization structure in workpieces made of aluminum or aluminum alloys
DE2711041A1 (en) PROCESS FOR PRODUCING GALVANIZED SHEET METAL AND DEVICE FOR CARRYING OUT THE PROCESS
DE488585C (en) Process for the direct processing of electrolytically obtained copper
DE871612C (en) Process for surface hardening of steel plates
DE545020C (en) Device for preventing the parboiling of food on the walls and bottom of a cooking vessel
DE573872C (en) Ice cell
DE573459C (en) Process for increasing the service life of copper molds
DE600004C (en) Heat treatment process for malleable white cast iron
DE1521060B1 (en) Process for the production of matt tinplate by electroplating
AT86616B (en) Process for obtaining chemically pure sulfuric acid by distilling technical or contaminated sulfuric acid.
DE626606C (en) Method and device for the production of curved glass panels
DE531782C (en) Process for improving the mechanical properties of aluminum alloys containing copper
DE664796C (en) Process for increasing the insulation resistance of heating elements
AT136962B (en) Process for tempering metals and alloys.
AT142530B (en) Drawn magnesium and process for its manufacture.
DE740427C (en) Molten salt bathtubs
DE362077C (en) Process for the treatment of hot steel blocks by extinguishing them in water or an aqueous solution
AT50650B (en) Process for the production of armor plates and similar objects from chrome-nickel steel.
DE742821C (en) Use of lead alloys for the manufacture of objects that are exposed to chemical or electrochemical attack
DE544135C (en) Process for thermal annealing of aluminum alloys