DE50205237D1 - Circuit for determining the state of charge of nonvolatile semiconductor memory cells - Google Patents

Circuit for determining the state of charge of nonvolatile semiconductor memory cells

Info

Publication number
DE50205237D1
DE50205237D1 DE50205237T DE50205237T DE50205237D1 DE 50205237 D1 DE50205237 D1 DE 50205237D1 DE 50205237 T DE50205237 T DE 50205237T DE 50205237 T DE50205237 T DE 50205237T DE 50205237 D1 DE50205237 D1 DE 50205237D1
Authority
DE
Germany
Prior art keywords
charge
determining
circuit
state
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50205237T
Other languages
German (de)
Inventor
Meinrad Schienle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE50205237T priority Critical patent/DE50205237D1/en
Application granted granted Critical
Publication of DE50205237D1 publication Critical patent/DE50205237D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
DE50205237T 2001-01-18 2002-01-10 Circuit for determining the state of charge of nonvolatile semiconductor memory cells Expired - Lifetime DE50205237D1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE50205237T DE50205237D1 (en) 2001-01-18 2002-01-10 Circuit for determining the state of charge of nonvolatile semiconductor memory cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001102180 DE10102180A1 (en) 2001-01-18 2001-01-18 Circuit for determining state of charge of non-volatile memory cells has regulating transistor with gate voltage controlled by differential amplifier so defined voltage appears at read output
DE50205237T DE50205237D1 (en) 2001-01-18 2002-01-10 Circuit for determining the state of charge of nonvolatile semiconductor memory cells

Publications (1)

Publication Number Publication Date
DE50205237D1 true DE50205237D1 (en) 2006-01-19

Family

ID=7670999

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2001102180 Ceased DE10102180A1 (en) 2001-01-18 2001-01-18 Circuit for determining state of charge of non-volatile memory cells has regulating transistor with gate voltage controlled by differential amplifier so defined voltage appears at read output
DE50205237T Expired - Lifetime DE50205237D1 (en) 2001-01-18 2002-01-10 Circuit for determining the state of charge of nonvolatile semiconductor memory cells

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE2001102180 Ceased DE10102180A1 (en) 2001-01-18 2001-01-18 Circuit for determining state of charge of non-volatile memory cells has regulating transistor with gate voltage controlled by differential amplifier so defined voltage appears at read output

Country Status (2)

Country Link
EP (1) EP1227500B1 (en)
DE (2) DE10102180A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1426965A1 (en) 2002-12-04 2004-06-09 STMicroelectronics S.r.l. Non volatile memory cell sensing circuit, particularly for low power supply voltages and high capacitive load values
US7312641B2 (en) * 2004-12-28 2007-12-25 Spansion Llc Sense amplifiers with high voltage swing
DE102005052058B4 (en) 2005-10-31 2007-07-12 Infineon Technologies Ag Voltage regulator for a bit line of a semiconductor memory cell
US8693272B2 (en) * 2011-06-30 2014-04-08 Qualcomm Incorporated Sensing circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528543A (en) * 1994-09-16 1996-06-18 Texas Instruments Incorporated Sense amplifier circuitry
JPH09259592A (en) * 1996-03-25 1997-10-03 Nissan Motor Co Ltd Semiconductor memory read circuit
EP0809256A3 (en) * 1996-05-21 1999-04-14 Information Storage Devices, Inc. Method and circuit for linearized reading of analog floating gate storage cell
JP3864528B2 (en) * 1998-01-19 2007-01-10 株式会社デンソー Semiconductor memory device
IT1305182B1 (en) * 1998-11-13 2001-04-10 St Microelectronics Srl HIGH PRECISION ANALOG READING CIRCUIT FOR VOLATILE MEMORY CELLS, IN PARTICULAR ANALOG OR MULTI-LEVEL FLASH OR EEPROM.

Also Published As

Publication number Publication date
DE10102180A1 (en) 2002-05-29
EP1227500A3 (en) 2004-06-23
EP1227500A2 (en) 2002-07-31
EP1227500B1 (en) 2005-12-14

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Legal Events

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