DE50006747D1 - Lithography process and mask for its implementation - Google Patents

Lithography process and mask for its implementation

Info

Publication number
DE50006747D1
DE50006747D1 DE50006747T DE50006747T DE50006747D1 DE 50006747 D1 DE50006747 D1 DE 50006747D1 DE 50006747 T DE50006747 T DE 50006747T DE 50006747 T DE50006747 T DE 50006747T DE 50006747 D1 DE50006747 D1 DE 50006747D1
Authority
DE
Germany
Prior art keywords
mask
implementation
lithography process
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50006747T
Other languages
German (de)
Inventor
Guenther Czech
Christoph Friedrich
Dr Fuelber
Rainer Kaesmaier
Dr Widmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE50006747T priority Critical patent/DE50006747D1/en
Application granted granted Critical
Publication of DE50006747D1 publication Critical patent/DE50006747D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
DE50006747T 1999-12-02 2000-11-23 Lithography process and mask for its implementation Expired - Lifetime DE50006747D1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE50006747T DE50006747D1 (en) 1999-12-02 2000-11-23 Lithography process and mask for its implementation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19958201A DE19958201A1 (en) 1999-12-02 1999-12-02 Lithographic process for structuring layers during the manufacture of integrated circuits comprises guiding radiation emitted by a radiation source and lying in the extreme UV range onto photosensitive layers via a mask
DE50006747T DE50006747D1 (en) 1999-12-02 2000-11-23 Lithography process and mask for its implementation

Publications (1)

Publication Number Publication Date
DE50006747D1 true DE50006747D1 (en) 2004-07-15

Family

ID=7931240

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19958201A Ceased DE19958201A1 (en) 1999-12-02 1999-12-02 Lithographic process for structuring layers during the manufacture of integrated circuits comprises guiding radiation emitted by a radiation source and lying in the extreme UV range onto photosensitive layers via a mask
DE50006747T Expired - Lifetime DE50006747D1 (en) 1999-12-02 2000-11-23 Lithography process and mask for its implementation

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19958201A Ceased DE19958201A1 (en) 1999-12-02 1999-12-02 Lithographic process for structuring layers during the manufacture of integrated circuits comprises guiding radiation emitted by a radiation source and lying in the extreme UV range onto photosensitive layers via a mask

Country Status (4)

Country Link
US (1) US6686098B2 (en)
EP (1) EP1117001B1 (en)
DE (2) DE19958201A1 (en)
TW (1) TW480368B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7027226B2 (en) * 2001-09-17 2006-04-11 Euv Llc Diffractive optical element for extreme ultraviolet wavefront control
US7027164B2 (en) * 2003-01-15 2006-04-11 Asml Holding N.V. Speckle reduction method and system for EUV interferometry
US7002747B2 (en) * 2003-01-15 2006-02-21 Asml Holding N.V. Diffuser plate and method of making same
US6867846B2 (en) * 2003-01-15 2005-03-15 Asml Holding Nv Tailored reflecting diffractor for EUV lithographic system aberration measurement
US7268891B2 (en) * 2003-01-15 2007-09-11 Asml Holding N.V. Transmission shear grating in checkerboard configuration for EUV wavefront sensor
TW200534050A (en) * 2004-02-09 2005-10-16 Zeiss Carl Smt Ag Mask for use in a microlithographic projection exposure system
US20070092843A1 (en) * 2005-10-21 2007-04-26 Macronix International Co., Ltd. Method to prevent anti-assist feature and side lobe from printing out
US8072577B2 (en) * 2006-06-05 2011-12-06 Macronix International Co., Ltd. Lithography systems and processes
TW200837490A (en) * 2007-03-03 2008-09-16 Nanya Technology Corp Phase shift mask for avoiding phase conflict
FR2951288A1 (en) * 2009-10-09 2011-04-15 Commissariat Energie Atomique ULTRA-VIOLET EXTREME PHOTOLITHOGRAPHY MASK, IN TRANSMISSION, AND MASKING METHOD
US8610267B2 (en) * 2010-07-21 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing delamination between an underfill and a buffer layer in a bond structure
CN102646634B (en) * 2011-04-29 2013-06-12 京东方科技集团股份有限公司 Manufacturing method for TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate
ES2531144T3 (en) 2012-09-07 2015-03-11 Evonik Industries Ag Curable compositions based on epoxy resins without benzyl alcohol
ITMI20130053A1 (en) * 2013-01-16 2014-07-17 Eni Spa METHOD OF IDENTIFICATION OF ANOMALOUS DISCONTINUITY INTERFACES IN PORE PRESSURES IN GEOLOGICAL FORMATIONS NOT PERFORATED AND IMPLEMENTING THE SAME SYSTEM

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63503425A (en) * 1986-05-27 1988-12-08 ヒユーズ・エアクラフト・カンパニー monolithic channel mask
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
JP3078163B2 (en) * 1993-10-15 2000-08-21 キヤノン株式会社 Lithographic reflective mask and reduction projection exposure apparatus
US5510230A (en) * 1994-10-20 1996-04-23 At&T Corp. Device fabrication using DUV/EUV pattern delineation
US5733688A (en) * 1994-12-14 1998-03-31 Canon Kabushiki Kaisha Lithographic mask structure and method of producing the same comprising W and molybdenum alloy absorber
US6150060A (en) * 1999-01-11 2000-11-21 The Regents Of The University Of California Defect tolerant transmission lithography mask
US6159643A (en) * 1999-03-01 2000-12-12 Advanced Micro Devices, Inc. Extreme ultraviolet lithography reflective mask

Also Published As

Publication number Publication date
EP1117001B1 (en) 2004-06-09
US20010021475A1 (en) 2001-09-13
TW480368B (en) 2002-03-21
EP1117001A3 (en) 2002-07-10
EP1117001A2 (en) 2001-07-18
US6686098B2 (en) 2004-02-03
DE19958201A1 (en) 2001-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE