DE439515C - Crystal detector with needle contact - Google Patents

Crystal detector with needle contact

Info

Publication number
DE439515C
DE439515C DES66362D DES0066362D DE439515C DE 439515 C DE439515 C DE 439515C DE S66362 D DES66362 D DE S66362D DE S0066362 D DES0066362 D DE S0066362D DE 439515 C DE439515 C DE 439515C
Authority
DE
Germany
Prior art keywords
crystal
needle
needle contact
crystal detector
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES66362D
Other languages
German (de)
Inventor
Paul Leuschner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES66362D priority Critical patent/DE439515C/en
Application granted granted Critical
Publication of DE439515C publication Critical patent/DE439515C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Road Signs Or Road Markings (AREA)

Description

Kristalldetektor mit Nadelkontakt. Die Erfindung betrifft Kristalldetektoren mit Nadelkontakt, wie sie für den Rundfunknahempfang in Laienkreisen weit verbreitet sind. Solche Detektoren haben den Nachteil. daß sie einer häufigen Neueinstellung bedürfen, da nur einzelne Punkte der Kristalloberfläche die für den Empfang notwendige ,;Enipfindächkeit,<besitzen. DasSuchensolcher Stellen auf einer natürlichen Kristalloberfläche wird dadurch erschwert, daß ein gleichmäßiges Herumführen der Kontaktnadel infolge der Rauhigkeit der Oberfläche unmöglich ist. Die Nadel hakt leicht hinter Kristallspitzen und .springt beim Weiterführen in unregelmäßiger Weise.Crystal detector with needle contact. The invention relates to crystal detectors with needle contact, as it is widespread for close radio reception in lay circles are. Such detectors have the disadvantage. that they are a frequent hiring require, as only individual points of the crystal surface are necessary for reception ,; Enipfindächkeit, <possess. Finding such locations on a natural crystal surface is made more difficult by the fact that a uniform guiding around the contact needle as a result the roughness of the surface is impossible. The needle hooks slightly behind crystal tips and .jumps irregularly when continuing.

Die Unebenheit der Oberfläche bedingt ferner, daß die Nadel an den verschiedenen Stellen mit wechselndem Druck auf dem Kristall aufliegt, während nur ein bestimmtey optimaler Kontaktdruck die Detektoreigenschaft des Kristalls voll zur Geltung kommen läßt. Durch die bekannte Ausbildung der Suchnadel als Spitze einer Spiralfeder kann man diesen übelständen nur unvollkommen abhelfen.The unevenness of the surface also means that the needle on the rests on the crystal in different places with varying pressure, while only a certain optimum contact pressure fully enhances the detector properties of the crystal can come into its own. Due to the well-known design of the search needle as a tip A spiral spring can only partially remedy these inconveniences.

Ihre gänzliche Bes-eit#gung wird erst durch die Verwendung einer geei-neten Kristallfläche erzielt. Gemäß der Erfindung wird ein Stück der zu benutzend-en Kristallmasse von entsprechender Größe, z. B. von hochwertigem Silicium, in einer Fläche #ebengeschliffen und die Fläche mit einer geeigneten Lauge oder Säure behandelt. Durch diese Maßnahme soll die Kristallfläche gleichzeitig von dem Schleifpulver befreit sowie die Einzelkristalle freigelegt werden. Für das unbewaffnete Auge ist eine so bearbeitete Kristallfläche vollständig eben. Sie setzt d#r gleitenden Bewegung der Suchnadel kein Hindernis entgegen und bietet als Gegenkontakt eine sehr große Zahl von empfindlichen Punkten, die bei fest eingestellter Suchnadel von dieser mit gleichem Druck berührt werden.Their complete elimination is only possible through the use of a unified Crystal surface achieved. According to the invention, there is a piece of the crystal mass to be used of appropriate size, e.g. B. of high-quality silicon, # plane ground in a surface and treated the surface with a suitable alkali or acid. By this measure the crystal surface is to be freed from the grinding powder at the same time as the individual crystals be exposed. To the unarmed eye is such a worked crystal surface completely flat. It does not set an obstacle to the sliding movement of the search needle and offers a very large number of sensitive points as a counter contact, which are touched with the same pressure when the search needle is set.

Claims (1)

PATrNTANSPRUCII: Kristalldetektor mit Nadelkontakt, dadurch gekennzeichnet, daß die Kontaktfläche der Kristallmasse in an sich be- kannter Weise geglättet, dann aber mit einer geeigneten Lauge oder Säure be- handelt ist, um die Einzelkristalle freizulegen.PATrNTANSPRUCII: crystal detector with needle contact, characterized in that the contact surface of the smoothed crystal mass in a known per se manner, but then is sawn with a suitable alkali or acid, to the single crystals expose.
DES66362D 1924-06-24 1924-06-24 Crystal detector with needle contact Expired DE439515C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES66362D DE439515C (en) 1924-06-24 1924-06-24 Crystal detector with needle contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66362D DE439515C (en) 1924-06-24 1924-06-24 Crystal detector with needle contact

Publications (1)

Publication Number Publication Date
DE439515C true DE439515C (en) 1927-01-11

Family

ID=25995939

Family Applications (1)

Application Number Title Priority Date Filing Date
DES66362D Expired DE439515C (en) 1924-06-24 1924-06-24 Crystal detector with needle contact

Country Status (1)

Country Link
DE (1) DE439515C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966387C (en) * 1942-10-02 1957-08-01 Erich Holz Electrical rectifier arrangement with germanium as semiconductor and method for the production of germanium for such a rectifier arrangement
DE973157C (en) * 1945-12-21 1959-12-10 Ibm Deutschland Punch card controlled relay multiplication machine
DE1157709B (en) * 1953-12-10 1963-11-21 Siemens Ag Method for producing a semiconductor component with tip contact electrodes on a polished and then roughened surface of the monocrystalline semiconductor body

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966387C (en) * 1942-10-02 1957-08-01 Erich Holz Electrical rectifier arrangement with germanium as semiconductor and method for the production of germanium for such a rectifier arrangement
DE973157C (en) * 1945-12-21 1959-12-10 Ibm Deutschland Punch card controlled relay multiplication machine
DE1157709B (en) * 1953-12-10 1963-11-21 Siemens Ag Method for producing a semiconductor component with tip contact electrodes on a polished and then roughened surface of the monocrystalline semiconductor body

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