DE4215199A1 - SEMICONDUCTOR DEVICE WITH BUILT-IN DRIVER POWER SOURCE - Google Patents

Description

The present invention relates to a semiconductor device with built-in driver power source (power supply source le) that can be used in a power switching device, in which a driver current from a load power source source can be obtained. In particular, concerns the Erfin an arrangement of a charging circuit in a half conductor device is installed. The present invention relates to improvements in the charge circuit of a semiconductor device with built-in driver power source that has an off has a semiconductor insulated gate element, a Gate driver circuit for charging and discharging the gate of the Insulated gate semiconductor element, a capacitor for supplying a current source to the gate driver circuit, and a charging circuit for charging the capacitor.  

Fig. 6 shows the circuit structure of a semiconductor device 1 with a built-in drive current source according to the prior art, as was proposed in Japanese Patent Application No. 1-2 66 852 by the owner of the present patent application. In the semiconductor device, an output switching section 10 uses an output MOSFET 2 as an output semiconductor element with an insulated gate. The drain electrode or the source electrode of the MOSFET 2 is connected to a load (not shown). An output control section 20 for driving the gate of the output MOSFET 2 to control the output switching section 10 has an enhancement MOSFET 32 for charging the gate of the output MOSFET 2 , and a depletion MOSFET 35 for discharging the gate of the off gear MOSFET 2 .

The two MOSFETs 32 and 35 are connected in series. The drain electrode of the enhancement MOSFET 32 is connected to a current source receiving terminal 21 of the output control section 20 . The source electrode of the depletion MOSFET 35 is connected to a terminal Pl of the load terminals of the semiconductor device, which is connected to the source electrode of the output MOSFET 2 . In the output control section 20 , a parallel circuit having a photodiode array 29 and a resistor 31 is connected between the gate and source electrodes of the enhancement MOSFET 32 . A parallel circuit from a photodiode array 33 and a resistor 34 is connected between the gate and the source electrode of the depletion MOSFET 35 . The photodiode arrays 29 and 33 are arranged to generate a photo voltage in response to light received by an LED 13 .

A battery section 30 for providing a current source for the output control section 20 consists of a capacitor 3 . The electrode 3 a with high potential of the capacitor 3 is connected to the Stromauellen receiving terminal 21 . A charging section 40 for charging the capacitor 3 of the battery section 30 during the rest period or the nonconducting period of the output MOSFET 2 has a charging circuit connected between a load terminal Ph coupled to the drain electrode of the output MOSFET 2 and another Load terminal Pl is connected, which is coupled to the source electrode of the output MOSFET 2 during the idle period or non-conductive period of the output MOSFET 2 . The charging section 40 has a charging MOSFET 5 and a egg NEN reverse current blocking diode 6 , which are connected in series between the drain electrode of the output MOSFET 2 and the electrode 3 a with high potential of the capacitor 3 , and a current limiting resistor 7 and a first constant voltage diode 41 connected in series between the drain and source electrodes of the output MOSFET 2 . The anode of the first constant voltage diode 41 is connected to the source electrode of the output MOSFET 2 , and the cathode of the diode is connected to both the resistor 7 and the gate of the charging MOSFET 5 . Therefore, he ste constant voltage diode 41 serves as a driver for the gate of the charging MOSFET 3rd

For the operation of the output MOSFET 2 of the semiconductor device with built-in driver current source, the LED 13 is switched on. When the LED 13 is switched on, the photodiode arrays 29 and 33 generate photo voltages. The photo voltage generated by the photodiode array 29 renders the enhancement MOSFET 32 conductive. A negative voltage is between the gate and the source of the depletion MOSFET 35 , so that the MOSFET 35 is made non-conductive. Therefore, the voltage is applied across the capacitor 3 to the gate of from passing MOSFET 2, whereby the charged gate and here again by the output MOSFET is put into operation. 2

Therefore, the load terminals Ph and Pl coupled to the output MOSFET 2 are connected. In this way, the semiconductor device works as a switch.

In order to switch off the output MOSFET 2 , the LED 13 is switched off. When LED 13 is turned off, the photo voltages from both diode arrays 32 and 33 disappear, so that enhancement MOSFET 32 is rendered non-conductive and depletion MOSFET 35 is rendered conductive. As a result, the application of the voltage across the capacitor 3 to the gate of the output MOSFET 2 is interrupted. The charge stored in the gate is discharged via the depletion MOSFET 35 so that the output MOSFET 2 becomes non-conductive.

The operation of the charge section 40 will now be described. It is assumed that a high voltage, substantially equal to the voltage of a load current source, is applied via the source / drain path of the output MOSFET 2 and that no charge is stored in the capacitor 3 . In this case, the potential of the source electrode is zero and the potential at the gate of the capacitor 3 takes on a value which is determined by a voltage value across the first constant voltage diode 41 . Since the voltage between the gate and source of the charging MOSFET 5 has been set to exceed the gate threshold of the MOSFET 5 , the charging MOSFET 5 becomes conductive. This results in the capacitor 3 being charged by the voltage between the drain and the source of the output MOSFET 2 via the charging MOSFET 5 and the reverse current blocking diode 6 , so that the electrode 3 a with a high potential of the capacitor is charged to a high potential. If the charging process continues and the potential at the electrode 3 a of the capacitor 3 rises with a high potential, the voltage between the gate and the source of the charging MOSFET 5 decreases. Therefore, the charging MOSFET 5 becomes non-conductive and the charging of the capacitor 3 is interrupted. The increase in potential at the electrode 3 a with a high potential of the capacitor 3 stops. Therefore, the poten is held tial to the electrode 3 a high potential of the capacitor 3 at a fixed value, the stantspannungsdiode substantially equal to the difference between the voltage value to the first Kon 41 and the gate threshold value of the charging MOSFET 5 is. The voltage across the capacitor 3 , which is kept at the fixed value, is applied to the power source receiving terminal 21 of the output control section 20 , and is used as a driving power source. The charge stored in the capacitor 3 is discharged via the charge / discharge at the gate of the output MOSFET 2 , so that the potential at the electrode 3 a decreases with a high potential of the capacitor 3 . However, the capacitor is recharged in the next rest period of the output MOSFET 2 , and is kept at the fixed value.

In the semiconductor device described above with built-in driver power source can the current or the Power supply capacitor for controlling the output MOSFET be loaded by an external circuit that acts as a load is connected to the output MOSFET. Therefore there is no special zielle, external power supply (power supply) such. The semiconductor device can be as a semiconductor device can be used with its own driver current source. In this regard, the semiconductor is direction with built-in driver power source for use suitable as a switching element in a current source circuit net, regardless of the control section of the circuit is provided.

A necessary improvement in this semiconductor device lies in the switching characteristics. In the conventional semiconductor device with a built-dri berstromquelle the voltage from between the gate and the source electrode of the charging-MOSFET 5, when the charging proceeds through the capacitor 3 and a increases, the potential at the electrode 3 with high potential. The MOSFET 5 has an output with a saturation characteristic, as is shown by way of example in FIG. 7. As can be seen, it has a constant current characteristic in the area where the drain / source voltage V _{DS is} high. As just shown in Fig. 7, the current value decreases when, for example, the gate / source voltage V _GS decreases from V _GS6 to V _GS1 . Therefore, in the conventional semiconductor device with built-in driver power source, the charging ability of the charging MOSFET 5 is reduced when the charging of the capacitor 3 continues and the gate / source voltage V _GS decreases.

For example, it is desirable that variations in the power source voltage applied to the output switching section 10 to drive the output control section 20 be suppressed to improve the switching characteristic of the semiconductor device. Therefore, variations must be suppressed to the electrode 3 a high potential of the Po tentials. However, if the capacitance of the capacitor is set to a high value to suppress variations in the current source voltage, the charging time is drastically increased because the voltage V _GS between the gate and source electrodes of the charging MOSFET 5 is always low. As a result, it is impossible to increase the drain current to charge the capacitor 3 through the charging MOSFET 5 , and the charging time is increased. If the on-time of the output MOSFET 2 is long and its off-time is short, the capacitor 3 is therefore not sufficiently charged. Therefore, the voltage for driving the output control section 20 drops, resulting in insufficient charging of the gate of the output MOSFET 2 . Due to the increased losses generated in the output MOSFET 2 , it is impossible to obtain the switching characteristic required by a control signal.

In a case where the charging MOSFET has satisfactory charging ability, the capacitor can be sufficiently charged within the period in which the drain / source voltage of the output MOSFET 2 remains low immediately after the MOSFET 2 is turned off. Therefore, the losses generated in the charging MOSFET 5 can be reduced.

On the other hand, in a case where the charging MOSFET has insufficient charging ability, the capacitor 3 continues to charge even after the drain / source voltage of the output MOSFET 2 becomes high after the MOSFET 2 is turned off. This leads to an increase in the losses generated in the charging MOSFET 5 .

To solve the above problems, it has been proposed that a high voltage diode is used as the constant voltage diode 41 so that the charging MOSFET 5 charges the capacitor when its gate / source voltage V _{GS is} high to improve the switching characteristic. This results in that the capacitor is charged quickly 3, and that the potential at the electrode 3 is a high. Therefore, the increased losses generated in the charging MOSFET can be eliminated. However, this solution leads to increased costs of the entire device. In the above structure, high potentials are applied between the gate and source of the output MOSFET 2 , between the corresponding electrodes of the charge MOSFET 5 , and the output control section 20 . As a result, components with a high breakdown voltage must be used for these elements, which increases the cost of the entire device.

At a time when the capacitor is not yet charged to a voltage sufficient to drive the output control section, for example, when the charge is in an initial state or when the turn-on time of the output MOSFET 2 is high, which is insufficient Load capacity leads, so the output switching section can be operated erroneously due to a load potential. If the power source of the battery section 30 is not sufficiently charged, the depletion MOSFET 35 is at a high impedance. In this state, when the load potential for the output MOSFET 2 varies, current flows through a path between the drain and the gate of the output MOSFET 2 which is caused by the drain / gate capacitance. Therefore, the gate potential of the output MOSFET 2 increases, and this leads to a danger in the direction that the terminals Ph and Pl can be short-circuited. In particular, if, for example, the semiconductor devices are built into the upper and lower arm of a bridge circuit, switching on as a result of a potential variation can result in the upper and lower arm being switched on at the same time, causing a short circuit. Therefore, from a safety point of view, it is desirable that an extremely reliable switching characteristic can be obtained by turning on a switch-off due to a potential variation.

It should be noted that in the conventional semiconductor device, the charging section can work only when there is a sufficient potential difference between the load terminals Ph and Pl. Therefore, when the on state of the output switching section is long, leakage current from the diodes, MOSFETs and other components in the output control section causes the voltage across the capacitor of the battery section to decrease. In addition, the charging of the capacitor tends to stop when the charging MOSFET is turned on again. Therefore, the gate of the output MOSFET 2 is undercharged, which increases the losses in the output MOSFET 2 . Therefore, it is difficult to maintain the switching characteristic set by the control signal.

The present invention has been made in consideration of the Circumstances described above developed and indicates the Advantage on that they can be used without using elements with a high breakdown voltage with a semiconductor device built driver power source available, which ver is casual in operation, inexpensive to manufacture, and good Has switching properties, and in which not the poss there is a faulty operation caused by a insufficient power source voltage is caused, and which quickly becomes a prescribed driver current source span can achieve even if the output semiconductor element with an insulated gate has a high switch-on time.

To achieve these benefits points according to the goal of the present invention as described herein and is realized, the semiconductor device with built-in Driver power source off according to the present invention gear shifting device to provide performance between first and to clamp second terminals outside the semiconductor device an output control device for controlling the output switching device in response to an input control signal, a battery device for supplying driver current  the output control device, a charging device for charging the battery device from an outside of the semiconductors Device arranged circuit, the charger has a constant current output device which with the external circuit is connected to a reference charge potential tial to provide a charge switching device for conducting a charging current to the battery device from the external circuit in response to the reference charge potential tial, and a charge termination device to turn off the charging switching device when a charging potential of the battery rieeinrichtung a predetermined charge potential level enough, which leads to excessive charging of the battery tion is avoided.

If the semiconductor device with built-in driver current source, the charge switching device a calf conductor element with an insulated gate, which is the charge reference potential as a gate potential, the charge termination can supply device a charge potential determination device to have a charge potential of the battery device detect, and a switch bypass device that with the Gate of the semiconductor element is connected to the insulated gate, to bypass the constant voltage output device if the determined charge potential of the battery device predetermined level reached the reference charge potential to set a level sufficient for the semiconductor switch off element.

To avoid faulty operation when the cargo potential is not sufficient, it is effective to add Lich to use a locking device to exit switch device to block when the charge potential of the Battery device is less than the predetermined charge potential level.  

To reduce the voltage drop in the battery cut when the output control device emits light means to light in response to the on gear control signal to send out, and a photo voltage generator has a photo voltage in response to generate the emitted light can be the charge direction a device for guiding at least a part the photo voltage to the battery device to the Charge battery device. Furthermore, the exit points control device preferably a device to the Convert photo voltage into an output control signal, and ei ne device for transmitting the output control signal the output switching device. In addition, the light tating device have an LED, and the Photospan The voltage generating device can be a phototransistor array exhibit.

The invention is illustrated below with reference to drawings ter exemplary embodiments explained in more detail, from which (including the features shown in the drawings) result in further advantages and features.

It shows:

Fig. 1 is a circuit diagram showing the circuit of a semiconductor device with built-in driver current source according to a first embodiment of the present invention;

FIG. 2 is a timing chart useful for explaining the operation of the semiconductor device with built-in drive power source shown in FIG. 1;

Fig. 3 is a circuit diagram of a semiconductor device with a built driver current source according to a second embodiment of the present invention;

Fig. 4 is a circuit diagram of a semiconductor device with a built driver current source according to a third embodiment of the present invention;

Fig. 5 is a circuit diagram of a semiconductor device with a built driving power source according to a fourth imple mentation of the present invention;

Fig. 6 is a circuit diagram of a conventional Halbleitervor device with built-in drive power source; and

Fig. 7 is a graph of the properties an example of the output internal showing the conventional semiconductor device having built-in drive power source.

In the semiconductor device with built-in drive current source according to the present invention can be the output switching section to be constructed with a switching element, at for example with a power transistor and a half lead Insulated gate element. If high capacity and a high switching speed is desired, so it is desirable to include the insulated gate semiconductor element the output switching section.

In this case, the output switching section is an output insulated gate semiconductor element. The exit tax section is a gate driver circuit for charging and discharging the gate of the output insulated gate semiconductor element. The battery section is a condenser for supply  a current source to the gate driver circuit. The cargo section is a charging circuit for charging the condenser sators with a voltage between the drain electrode and the source electrode of the output semiconductor element with iso gated gate. The charging circuit has a charging half conductor element and a reverse current blocking diode on the in series between the drain electrode and the capacitor ge are switched, as well as a resistor and a first constant voltage diode connected in series between the drain electrode and the source electrode is connected. The anode of the first Constant voltage diode is off with the source electrode connected semiconductor element with an insulated gate, and the cathode of the first constant voltage diode is at the gate of the charging semiconductor element and to the resistor closed. The charge circuit has a short circuit Semiconductor element on which with the gate with the side high potential of the capacitor via a second constant voltage diode is connected which corresponds to the voltage switches across the capacitor, and at least part of the first constant voltage diode shorts when the half conductor element is conductive.

The short-circuiting semiconductor element can be an NPN transistor its base with the anode of the second constant chip voltage diode is connected. Alternatively, this can be brief closing semiconductor element is a semiconductor element with iso gated gate. In this case the anode is the second Constant voltage diode through a resistor with the source electrode of the short-circuiting semiconductor element with iso gated gate, and the cathode of the second constant voltage diode is with the gate of the short-circuiting half lead Terelementes connected to an insulated gate.

As described above, the present  Invention of the loading operation of the loading section forcibly be ends. Therefore, the charge reference potential which is applied to the charge switching device, selected be that it increases their charging capacity. A semiconductor Insulated gate element having a gate which, for example, applies the charge reference potential operates as a charge switch for termination delivery of the charge process at a through the charge reference prescribed charge potential. If the cargo potential of the battery section is a prescribed potential tial reached, must in the conventional device Insulated gate semiconductor element can be opened. Here this results in an insufficient charge because the diffe limit of the potential of the battery section and the charge reference potential cannot be large. In contrast to this can be used in the charge switching device in the semiconductor device according to the present invention of the battery cut to a prescribed charge potential will. Therefore, the charge capability of the charge switch can be direction can be improved in that a sufficiently high Charge reference potential to the semiconductor element with iso gated gate is created.

The charging termination device can be a switch bypass be circuit that works so that when the loaded Potential reaches a predetermined potential, the constant voltage output device after a determination by bypassed the determination circuit for the charged potential to raise the reference charge potential or lower to the potential at which the semiconductor element ment charge switch device opened with insulated gate becomes.

If the charge potential is not yet sufficient, then so  the output switching section is not forcibly into one operational condition offset with the help of the lockout device device, causing the incorrect operation of the output switching cut due to insufficient charge potential is prevented. If the output switching section with the half conductor element is constructed with an insulated gate, so preferably a comparator or a switching element as one Locking device used to increase or increase the gate potential pull down so that the semiconductor element with insulated Gate is opened when the charge potential of the battery section does not have a prescribed charge potential enough.

If a light output control section is used, ver light from the light emitting device causes the photo voltage generating device for generating charge in Response to the light. The voltage drop across the Batte Rie section can be minimized by the fact that he witnessed charge is supplied to the battery section. Self if the output switching section for a long period of time is not used, therefore the photo voltage generation device the voltage drop across the battery section compensate for the leakage current.

In the arrangement according to the present invention, in a case where a capacitor for the battery cut is used, the charge potential across the condensers sator by a charge potential detection circuit provided, which has a second constant voltage diode. At a point during the charging process when the condensate gate voltage increases in order to reach a value which is determined by the constant voltage value of the second constant voltage diode a switch bypass circuit is required turns around, which has a short-circuiting semiconductor  to end the charge. If the capacitor voltage before reached certain value, the short-circuiting switches Semiconductor element and includes the first constant chip voltage diode completely or partially briefly. This leads to, that the gate potential of the charging semiconductor element ver is reduced to the gate / source potential of the charging Semiconductor element to decrease below its threshold. In this way, the charging semiconductor element is forced wisely put in an inoperable state where due to the operational process of charging the capacitor will. Even if the turn-on time of the output half lead Insulated gate element and the rest period is short, therefore the driver current source voltage for the Driver circuit kept at a prescribed value the. The preferred embodiments of the present Er Invention are attached below with reference to the Figures described.

First embodiment

Fig. 1 shows the circuit arrangement of a semiconductor device with built-in driver current source according to a first embodiment of the present invention. The semiconductor device 1 with built-in drive power source according to the present invention uses an IGBT 22 and is designed as a high-speed switching device for coping with a high current. The semiconductor device consists of an output switching section 10 including the IGBT 22 , an output control section 20 for actuating the output switching section 10 , a battery section 30 for supplying a driving current source to the output control section 20 , and a charging section 40 for charging the battery section 30 .

The output control section 20 of the semiconductor device 1 operates to electrically disconnect a control circuit of a control unit for controlling the semiconductor device 1 from the semiconductor device 1 and to prevent the transmission of noise to the control unit. For this purpose, the output control section 20 has a light emitting circuit 55 including an LED 13 , a photo voltage generating circuit 56 for generating a photo voltage in response to light from the light emitting circuit 55 , inverters 57 and 58 for amplifying the received photo voltage, and for applying of the amplified voltage to the IGBT 22 as an output control signal, and a latch circuit 59 for resetting the output control signal to a low value when the voltage for driving the output control section 20 is below a predetermined potential Vth to lock the IGBT 22 .

The photo voltage generation circuit 56 according to the present embodiment uses a photodiode array 51 to generate a photo voltage in response to light from the LED 13 . If the LED 13 emits light, the diode array can generate a photo voltage V 5 . Since the electrode 51 a with high potential of the photodiode array 51 is connected to the gate electrodes of MOSFETs 17 a and 18 a, these MOSFETs work together so that they form the inverter 57 , which is supplied with driving current from the battery section 30 . The gate electrodes of the MOSFETs 17 a and 18 a are coupled to a load terminal Pl, which is connected via a resistor 27 to the lower potential side of a load. Through this connection, a photo voltage is generated when the LED 13 emits light so that the input of the inverter 57 is at a high potential and the input of the inverter 58 , which receives the output signal of the inverter 57 , is at a low potential. Therefore, the output of inverter 58 assumes a high potential, and the IGBT 22 , which is coupled to the output of inverter 58 , becomes conductive. In the semiconductor device according to the present embodiment, when the LED 13 emits light and the photodiode array 51 generates a photo voltage, the IGBT 22 is driven by the inverters 57 and 58 . Therefore, even if the photo voltage from the photodiode array 51 is not large and does not manage to drive the IGBT 22 , a sufficiently high power to charge the gate electrode of the IGBT 22 can be supplied from the battery section 30 . Therefore, a switching operation can be carried out at an extraordinarily high speed. The side 51 a with high potential of the photodiode array 51 is further connected to the electrode 3 a with high potential of the capacitor 3 via a diode 53 . Therefore, when the LED 13 emits light, the battery section 30 can be supplied with current by the photo voltage of the photodiode array 51 .

When the LED 13 is switched off, the photodiode array 51 does not generate any photo voltage, so that a low potential is fed to the input of the inverter 57 via the resistor 27 . Therefore, the output of inverter 58 assumes a low potential and the IGBT 22 is opened.

The latch circuit 59 is included in the output control section 20 . The blocking circuit 59 has a P-channel MOSFET 54 which is provided with a gate electrode which receives a high potential from the battery section 30 . The source electrode of the P-channel MOSFET 54 is connected to the load terminal Pl, which serves as a low potential terminal, and the drain electrode of the MOSFET 54 is connected to the gate electrode of the IGBT 22 . Through the connections of the MOSFET, when the potential of the battery section 30 is below the threshold voltage Vth of the P-channel MOSFET 54 , the MOSFET is in a conductive state and the gate potential of the IGBT 22 is fixed at a low potential. Therefore, even if the potential of the battery section 30 is not sufficient to drive the inverters 57 and 58 , the gate potential of the IGBT 22 is fixed at a low potential, thereby avoiding a state of the open collector transistor. Therefore, the IGBT 22 is placed in an open state when the potential of the battery portion 30 is low. Therefore, even if an abrupt potential change occurs in the load of the IGBT 22 , the IGBT 22 is not turned on. When the battery section 30 has been charged to the required potential and is now high, the P-channel MOSFET 54 is in an off state. In this state, it has no influence on the gate potential of the IGBT 22 . If the battery section 30 is at a high potential, the P-channel MOSFET 54 is in a switched-off state. Therefore, the charge stored in the battery section 30 is not discharged from the battery section by the P-channel MOSFET 54 . Therefore, when the power source of the battery section 30 has not been sufficiently charged, the blocking circuit 59 has no influence on the semiconductor device.

In the semiconductor device with built-in drive current source according to the present embodiment, current (power) is supplied to the output control section 20 from the battery section 30 using the capacitor 3 as a battery device. The battery section 30 is loaded by the charging section 40 from a load circuit which is connected to the output terminals Ph and Pl of the semiconductor device 1 . The charge section 40 in the present embodiment has a charge switch circuit 42 for supplying current from the load circuit to the battery section 30 , a constant voltage circuit 43 for generating the charge reference potential V 2 in order to control the charge switch circuit 42 , and determine a charge potential averaging circuit 45 for determining the potential of the battery section 30, and a switch bypass circuit 44 to the charge reference potential V 2 on the basis of the lung Determined by the 45 to change charge potential detection circuit.

The charge switch circuit 42 has a charge IGBT 23 which is connected at the collector to the load terminal Ph which is also connected to the high potential side of the load circuit. The emitter of the charge IGBT 23 is connected via the reverse current blocking diode 6 to the electrode 3 a of high potential of the battery section 30 . Therefore, when the charge IGBT 23 is conductive, the capacitor 3 is charged. The constant voltage circuit 43 for controlling the gate potential of the charge IGBT 23 has a resistor 7 , a reverse current blocking diode 8 , and a first constant voltage diode 41 , which are arranged in this order from the load terminal Ph. The first constant voltage diode 41 can provide a constant voltage V 2 , and the high potential side of the diode 41 is connected to the gate electrode of the charge IGBT 23 . Therefore, when a voltage V 1 having a potential above a predetermined constant voltage V 2 is applied to the diode 41 and the constant voltage circuit 43 , the gate of the charge IGBT 23 is kept at the constant voltage V 2 . If the constant voltage V 2 is equal to or greater than the threshold voltage of the charge IGBT 23 , the charge IGBT is conductive and the charging process begins. As with the prior art charging MOSFET 5 , it is desirable to increase the difference between the gate potential and the emitter potential of the charging IGBT 23 to increase the charging current, thereby reducing the charging time. In the present embodiment, the constant voltage V 2 is set to be sufficiently large.

Therefore, when the constant voltage V 2 applied to the charging IGBT 23 is high, it is necessary to stop charging when the charged potential of the battery section 30 reaches a predetermined voltage, so that an IGBT with the same values as those of the charging IGBT 23 can be used in the output control unit. For this purpose, the charged potential determining circuit 45 and the switch bypass circuit 44 are used in the semiconductor device with built-in drive current source according to the present embodiment. In the present exporting approximate shape, the detection circuit 45 for the aufgela dene potential, a second constant-voltage diode 11, the high to the potential side of the battery section 30 is connected, and a resistor 25 and the load terminal connected between the diode 11 Pl low potential is. The switch bypass circuit 44 consists of a short-circuiting MOSFET 24 of the N-channel type, which receives the electrode potential at its gate, which is developed via the resistor 25 in the detection circuit 45 for the charged potential. The short-circuiting MOSFET 24 is switched in parallel with the first constant voltage diode 41 . The second constant voltage diode 11 operates to conduct current when the potential of the battery section 30 exceeds a prescribed potential V 5 . Therefore, when the potential of the battery section 30 exceeds the prescribed potential V 5 , the gate potential of the short-circuiting MOSFET 24 is higher than its source potential. In this state, the short-circuiting MOSFET 24 becomes conductive and forms a circuit which bypasses the first constant voltage diode 41 . As a result, the gate potential of the charging IGBT 23 is pulled down to a low potential, so that the charging IGBT 23 is opened and the operation of charging the battery portion 30 ends.

The operation of the semiconductor device constructed in this manner with a built-in drive current source will now be described with reference to FIG. 2, which shows potential changes at essential points in the semiconductor device. In Fig. 2, reference numeral P 1 denotes a potential applied to the load terminals Men and Pl; P 2 denotes the gate potential of the charging IGBT 23 ; P 3 denotes the potential on the high potential side of the battery section 30 ; P 4 denotes the photo voltage generated by the photodiode array 51 ; and PS denotes the gate potential of the output IGBT 22 .

At a time t 1 , a switch in the load is turned on, so that a potential difference between the load terminals Ph and Pl appears. If the load terminal P1 is grounded, a potential V 3 occurs at the load terminal Ph in an open state of the output switching section 10 . When a voltage changes at a rate dV / dt as the load power source increases, current flows through the collector gate capacitance of the IGBT.

At this point in time the required potential has not yet been reached via capacitor 3 . Therefore, inverter 58 is in a high impedance state. If the blocking circuit 59 is not used, the gate potential PS of the IGBT increases, as indicated by a curve V 11 , and the IGBT 22 is temporarily conductive. It is noted that the latch circuit 59 is used in the present embodiment. If the required potential has not yet been reached via the capacitor 3 , the gate potential P 5 is therefore kept at the low potential. Therefore, the temporary conduction state of the IGBT does not occur, as indicated by curve V 11 .

At a time t 2 , the potential P 1 at the load terminal is equal to the potential V 1 , and the gate potential P 2 of the charging IGBT 23 reaches a prescribed charging potential V 2 . In this state, the charging IGBT 23 becomes conductive, and the operation of charging the capacitor 3 starts. At a time t 3 , the potential P 3 of the capacitor 3 reaches a prescribed potential V 4 . Then the second constant voltage diode 11 becomes conductive and the short-circuiting MOSFET 24 is switched on. Therefore, the gate potential P 2 becomes low and the charging IGBT 23 is turned off.

In a situation in which the capacitor 3 has been charged as described above, the LED 13 receives a control signal at a time t 4 and emits light. In response to the emitted light, a photo voltage appears on the side P 4 high potential of the photodiode array 51st The photo voltage drives the inverters 57 and 58 depending on the potential stored in the capacitor 3 , so that the gate potential P 5 of the IGBT 22 is pulled up to the high potential. Therefore, the IGBT 22 becomes conductive and the load potential P 1 drops.

The potential P 3 of the capacitor 3 drops because it has driven the inverters 57 and 58 and has charged the gate electrode of the IGBT 22 .

The reverse current blocking diode 6 is provided for the purpose of preventing the reduction in the potential of the capacitor 3 . However, leakage current from inverters 57 and 58 gradually reduces the potential. If the IGBT remains switched on for a long time, the potential P 3 of the capacitor 3 drops, as indicated by a curve V 12 . As a result, the next charge time requires an undesirably high charge time or the potential drops below the threshold of the IGBT 22 . However, in the present embodiment, the photo voltage V 5 generated by the photodiode array 51 is supplied to the capacitor 3 . Therefore, the reduction in the potential P 3 of the capacitor 3 is checked. Therefore, the charging time of the next charging process can be reduced, and the potential does not fall below the threshold value of the IGBT 22 .

At a time t 5 when the LED 13 is turned off in response to a control signal, the photodiode array 51 does not generate photo voltage, the output potential of the inverter 58 goes low, and the IGBT 22 is turned off. Since the potential P 1 at the load terminal returns to the high potential, so that the gate potential P 2 of the charging IGBT 23 is set to the charging potential V 2 . In the conventional semiconductor device, the potential of the capacitor 3 is determined by the charging potential V 2 . For this reason, it is impossible to set the charging potential V 2 to a high potential. In contrast, in the semiconductor device according to the present invention, when the potential of the capacitor 3 reaches a prescribed potential V 4 , the charged potential determining circuit 45 and the switch bypass circuit 44 operate to automatically stop charging. Therefore, the charging potential V 2 can be set to a very high potential. Under the high charging potential, the capacitor 3 supplied charging current can be kept at a high value. Therefore, the loading process takes a shorter time, which enables the device to be ready for the next incoming control signal.

As described above, even if the power on time of the semiconductor device is long, which leads to high demands changes to the battery section leads to a sufficiently high level Driving voltage can be obtained from the battery section. Therefore, the loss in the output IGBT is small, and the Reliability of the switching process is high. At the same time in the present invention is that of the photodiodes generated photo voltage used to the leakage current of the Compensate battery section. Therefore, for the Switching process required driver voltage ensured will. Even if the load on the semiconductor device is connected, if the required che driver voltage has not yet been reached, the operating output IGBT locked, causing a faulty Operation is prevented. Therefore, the semiconductor device device with built-in driver power source according to the present the invention a lower power loss and a high reliability. In the semiconductor device according to The present invention can achieve the above objects can be achieved with a device that lowers the batteries cut drive voltage of the conventional semiconductor device used. Therefore, it is not necessary in the out gear control section to use circuit elements that have high nominal values. This leads to the cost the device can be reduced.

Second embodiment

Fig. 3 is a circuit diagram showing an arrangement of a semiconductor device with built-in driver current source according to a second embodiment of the present invention. The semiconductor device with built-in driver current source according to the second embodiment uses an IGBT 22 as in the first embodiment, and is designed as a high-speed switching device for managing a high current. The semiconductor device consists of an output switching section 10 including the IGBT 22 , an output control section 20 for actuating the output switching section 10 , a battery section 30 for supplying a driving current source to the output control section 20 , and a charging section 40 for charging the battery section 30 . For simplification, the same or corresponding sections in the figure are denoted by the same reference numerals and reference numerals as in the first embodiment.

It should be noted that the second embodiment uses two photo voltage generating circuits; a photo voltage generating circuit 56 for controlling the inverters 57 and 58 in response to light from the LED 13 , and a photo voltage generating circuit 60 for charging the battery section 30 including the capacitor 3 . The photo voltage generating circuit 56 has a photodiode 26 and a resistor 27 which are connected between the high potential electrode of the photodiode 26 and the load terminal Pl ge, which serves as a low potential terminal.

The high potential electrode of the photodiode 26 is connected to the input of the inverter 57 . As in the first embodiment, when the LED 13 is turned on, which causes the photodiode 26 to generate a photo voltage, a high potential appears at the input of the inverter 57 , and a low potential occurs at the input of the inverter 58 . Therefore, the gate potential of the output IGBT 22 becomes high, so that the semiconductor device with the drive current source built in is in a conductive state. The operation of the semiconductor device when the LED 13 is turned off is also similar to the first embodiment, and therefore no further description is given.

The photo voltage generating circuit 60 has a photo diode array 51 and a diode 53 , as in the first embodiment. The capacitor 3 is charged by the photo voltage that is generated when the LED 13 emits light. In the present embodiment, the inverters 57 and 58 are controlled by the photo-voltage generating circuit 56 instead of the photo-voltage generating circuit 60 , thereby causing the capacitor 3 to be charged. Therefore, an increased charge for the output switching section 10 is obtained; compared to the charge obtained by the device according to the first embodiment. In this regard, the semiconductor device according to the second embodiment is suitable for uses requiring a long turn-on time. In the semiconductor device according to the present embodiment, the turn-on ability is larger than in the semiconductor device according to the first embodiment. This fact means that egg ne longer time can be used to charge the capacitor 3 . In the present embodiment, the circuitry of the charge section 40 is simplified by omitting the charged potential determining circuit 45 and the switch bypass circuit 44 used in the first embodiment.

In the present embodiment, the LED 13 is used for both the photo voltage generating circuit 60 and the photo voltage generating circuit 56 . If this is necessary, however, individual light sources can be provided for each associated photo voltage generating circuit. Of course, other suitable active elements, for example phototransistors, can also be used instead of the photodiodes in order to generate a photo voltage.

Third embodiment

FIG. 4 is a circuit diagram showing an arrangement of a semiconductor device with a built-in drive current source according to a third embodiment of the present invention. The semiconductor device with built-in drive power source according to the third embodiment is a high-speed switching device for coping with a high current, and uses an output switching section 10 which is constructed with an output MOSFET 2 of the N-channel type. The semiconductor device 1 , like the semiconductor device according to the first embodiment, consists of the output switching section 10 , an output control section 20 for operating the output switching section 10 , a battery section 30 for supplying a driving current source to the output control section 20 , and a charging section 40 for charging the battery section 30 . In Fig. 4, the same or corresponding sections are designated by the same reference numerals and reference numerals as in the figures for the first embodiment for simplification.

As in the first embodiment, the charging section 40 of the semiconductor device 1 has a charge switch circuit 42 , a constant voltage circuit 43 for generating a reference charge potential V 2 in order to control the charge switch circuit 42 , a determination circuit 45 for the charged potential for determining the potential of the battery section 30 , and a switch bypass circuit 44 for changing the reference charge potential V 2 based on the determination of the determination circuit 45 for the charged ne potential. In the present embodiment, a charge MOSFET 5 is used for the charge switch circuit 42 . Approximate shape in the constant voltage circuit 43 of the present exporting a load-constant voltage diode is connected in series with the first constant-voltage diode 41 9 in addition to the reference charge potential V 2, which trode to the Gateelek the load MOSFET is to be created 5 to set to a higher potential. In the switch bypass circuit 44 , an NPN transistor 12 is used as a short-circuiting semiconductor element 12 , and is connected to short-circuit the first constant voltage diode 41 . The determination circuit 45 for the charged potential for controlling the short-circuiting semiconductor element 12 has a second constant voltage diode 11 , which is connected to the cathode with the electrode 3 a high potential of the capacitor 3 and to the anode with the base of the short-circuiting semiconductor element 12 . The NPN transistor 12 is connected at the base to the anode of the second constant voltage diode 11 , at the collector to the cathode of the first constant voltage diode 41 , and at the emitter to the anode of the first constant voltage diode 41 . The constant voltage across the additional constant voltage diode 9 is set to such a value that the gate / source voltage of the charging MOSFET 5 is less than the gate threshold value of the charging MOSFET 5 , on condition that the first constant voltage diode 41 is short-circuited when the capacitor 3 is charged to a predetermined voltage. If necessary, the reverse current blocking diode 8 is inserted between the current limiting resistor 7 and the gate of the charging MOSFET 5 .

The operation of the loading section 40 will now be described. It is now assumed that the output MOSFET 2 is in a quiescent or non-conductive state, that a high voltage is substantially equal to the load current source voltage between the drain and source of the output MOSFET 2 , and that no charge is stored in the capacitor 3 . At this time, the potential at the source electrode of the charging MOSFET 5 is substantially zero ( 0 ) and the potential at the gate electrode of the charging MOSFET 5 is a high voltage, which is determined by the sum of the voltage values of the constant voltage diode 9 and the constant voltage diode 41 will serve as the first constant voltage diode at de. Therefore, the charging MOSFET 5 is conductive. Then the capacitor 3 is charged in a conventional manner. In this circuit arrangement, the gate potential of the charging MOSFET 5 and therefore the gate / source voltage V _{GS of} the charging MOSFET 5 can be set high. This leads to a high drain current I _B , and therefore enables a reduction in the charging time of the capacitor. When the voltage across the capacitor 3 rises, and the constant voltage across the second constant-voltage diode 11 exceeds flows during charging current into the base of the short-circuiting the semiconductor element 12 as a result of the avalanche or tunnel effect of the diode 11, and this ver anlaßt the shorting semiconductor element 12 to switch to a conductive state, whereby the first constant voltage diode 41 is short-circuited. Due to the short-circuiting of the diode 41 , the gate potential of the charging MOSFET 5 corresponds only to the voltage of the additional constant voltage diode 9 . The gate / source voltage V _{GS of} the charging MOSFET 5 drops below the threshold, causing the charging MOSFET 5 to switch to an off state to stop charging the capacitor 3 and increase the potential at the electrode 3 a to stop with high potential. Therefore, the potential at the electrode 3 a with a high potential of the capacitor 3 is set to a fixed value, which depends on the voltage across the two constant voltage diode 11 .

The output control section 20 will be described below. The output control section 20 is a gate driver circuit for the output MOSFET 2 , and is based on a circuit system which is suitable for high-speed operation.

In the output control section 20 , reference numeral 14 denotes a photodiode which is connected to the current source receiving terminal 21 at the cathode and to the base of an NPN transistor 15 at the anode. The photodiode 14 is arranged so that it receives light from the LED 13 , and generates a pre-written photo voltage. The NPN transistor 15 is connected at the base to the anode of the photodiode 14 , to the collector via a resistor 16 to the current source receiving terminal 21 , and at the emitter to the source electrode of the output MOSFET 2 . Reference numerals 17 a and 18 a denote a pair of inverters which work together in operation. The inverter 18 a has a P-channel MOSFET which is connected at the drain to the current source receiving terminal 21 and at the source to the drain of the inverter 18 a, and at the gate with the collector of the NPN transistor 15 . The inverter 18 a has an N-channel MOSFET, which is connected to the drain of the source of the P-channel MOSFET 17 a, at the source to the source of the output MOSFET 2 , and at the gate with the gate of the P-channel MOSFET 17 a, to the collector of the NPN transistor 15 . A node between the gates of the P-channel MOSFET 17 a and the N-channel MOSFFT 18 a represents an input point of the pair of inverters 17 a and 18 a. A node between the source electrode of the P-channel MOSFET 17 a and the drain electrode of the N-channel MOSFET 18 a is a starting point of the pair of inverters. An output signal at the starting point is applied to the gate of the output MOSFET 2 .

The operation of the gate driver circuit 20 will now be described. When the LED 13 is driven to emit light, and the photodiode 14 generates a photo voltage, the NPN transistor 15 becomes conductive, the input of the pair of inverters is at a level L _ow , the P-channel MOSFET 17 a is made conductive, the N-channel MOSFET 18 a is made non-conductive, and the output of the pair of inverters is at a _high level. If the output of the _{inverter is} at a _high level, the gate of the output MOSFET 2 is charged and the MOSFET 2 is made conductive. If the LED 13 is turned off, the NPN transistor 15 is turned off, the _inverter input is at a _high level, the P-channel MOSFET 17 a is made non-conductive, the N-channel MOSFET 18 a is made conductive and the inverter output is on a L _ow level. In this case, the charge stored in the capacitor 3 is discharged via the N-channel MOSFET 18 a, whereby the output MOSFET 2 is made non-conductive.

Fourth embodiment

Fig. 5 is a circuit diagram showing the construction of a semiconductor device with a built-Treiberstromquel le according to a fourth embodiment of the present invention. The semiconductor device with built-in driver power source according to the fourth embodiment, like that according to the first and second embodiment, is a cooking speed switching device for high current management using an IGBT 22 . The semiconductor device has an output switching section 10 including the IGBT 22 , an output control section 20 for operating the output switching section 10 , a battery section 30 for supplying a driving current source to the output control section 20 , and a charging section 40 for charging the battery section 30 . In the figure, the same or corresponding sections are designated by the same reference numerals and reference signs as in the drawings for the first embodiment, to facilitate the description.

The semiconductor device according to the present embodiment differs from the semiconductor device shown in FIG. 4 in that the output IGBT 22 is used as the output semiconductor element with insulated gate, that a charging IGBT is used as the charging semiconductor element of the charging section 40 , and that a short-circuiting MOSFET 24 is used as the short-circuiting semiconductor element. In addition Lich a resistor 25 is provided. This resistor provides a gate potential that is required to make the short-circuiting MOSFET 24 conductive when the voltage applied to the second constant voltage diode 11 exceeds a prescribed value and a current flows. Despite the above differences, the operation of the circuit of the fourth embodiment is substantially the same as the operation of the circuit of Fig. 4. In the embodiment shown in Fig. 5, the constant voltage diode 9 , which forms part of the first constant voltage diode, is not used is shown in Fig. 4. The reason for this is that when a diode with a sufficiently high constant voltage is used as the first constant voltage diode, only the first constant voltage diode 41 is required for the operation of the circuit. The stray capacitance of the short-circuiting MOSFET 24 is, if necessary, available for the constant voltage diode 41 .

The output control section 20 is substantially the same as in the first or second embodiment, but is different from the third embodiment. A photo voltage generating circuit 53 has a photodiode 26 arranged to generate a predetermined photo voltage in response to light received from an LED 13 of a light emitting circuit 55 , and has a resistor 27 to one _Apply an input signal with a level H _igh to an input point of an _inverter 57 of a first stage, which has a P-channel MOSFET 17 a and an N-channel MOSFET 18 a when a photo voltage is generated in the photodiode 26 . An inverter 58 of a second stage has a P-channel MOSFET 17 b and an N-channel MOSFET 18 b. As the MOSFETs of the inverter 57 of the first stage operate in the inverter 58, the MOSFETs 17 b and 18 b together. The output signal of the second stage inverter 58 is applied to the gate of the output IGBT 22 . If, in a semiconductor device according to the present embodiment, dV / dt is not large and the on-time of the output IGBT 22 is not long, the blocking circuit and the charging circuit using the photo voltage can be omitted, which simplifies the circuit arrangement.

The operation of the output control section 20 of the present embodiment will now be described. When the photodiode 26 receives light from the LED 13 , the input of the second stage inverter 58 goes low. Therefore, the P-channel MOSFET 17 b is made conductive, and the N-channel MOSFET 18 b is made non-conductive, and its output becomes high. Therefore, the output of the output control section 20 becomes high, and the output of the IGBT 22 is made conductive. When the LED 13 is turned off, the input of the second stage inverter 58 becomes high, the P-channel MOSFET 17 b is made non-conductive, and the N-channel MOSFET 18 b is made conductive, and its output becomes low . Therefore, the output of the output control section 20 becomes low and the output IGBT 22 is made non-conductive.

In the embodiments of the present invention described so far, the MOSFET or IGBT is used as the output semiconductor element with an insulated gate in the output switching section 10 . Another type of semiconductor device, such as an insulated gate semiconductor element such as an MCT, can be used as the insulated gate output semiconductor element. In addition to the insulated gate semiconductor element, a bipolar semiconductor element such as a power transistor can also be used for the same purpose. In addition, a suitable combination of semiconductor elements can be used to form the output switching section.

Used in the previously described embodiments the output control devices of the optically isolating type an LED as a signal source. Alternatively, a Opto-isolator such as a photocoupler used will. In a case where insulation is opposite the control signal is not required, the output can tax section directly through an externally created tax sig can be controlled.

As described above, reverse current blocking is diode in series with the current limiting resistor between the drain and the gate of the charge semiconductor element in the Constant voltage setting circuit switched. The reversal current blocking diode is intended to reverse the reverse flow of Block charge in the gate of the charge semiconductor elements is stored when the output switching section  is made conductive, and the applied to the load terminal Tension becomes low. In a case where the switching period of the output switching section is sufficiently short, and the resistance of the current limiting resistor is sufficient is large, the reverse current blocking diode can be omitted.

In the embodiments described above, can a PIN diode, an APD or the like as the photodiode be used if necessary. Of course are the circuit arrangements mentioned above only exemplary, and there can be different others Use circuit arrangements according to the application Purpose and conditions for the semiconductor device.

As described above, the semiconductor has direction with built-in driver current source a charge level to stop the charging process, the by the charging device according to the charging potential the battery device is executed. Therefore, it can be sent to the Charge switching device applied reference charge potential be set to a high potential without the risk an overload, so that of the charging device of the Battery device supplied current is increased, and the Battery can be charged in a shorter period of time. Furthermore, in a case in which the switch-on load is high, the stability of the performance, the off gear shifting device is supplied, ensure. Wei furthermore, the loss at the time of switching can be reduced which leads to a more reliable switching process. Since that Charge potential of the battery device according to the present the invention is in the order of the potential, wel ches is used in the conventional device, can the output control device according to conventional specifications. Therefore, the  Semiconductor device with built-in drive current source according to the present invention, low switching losses, a high reliability, and low cost.

The locking device prevents incorrect operation of the Output switching device when the battery device is still has not been charged to the required charge potential, which improves the reliability of the switching process.

When an output control device of a light insulating Type is used, the battery section can be replaced by a Photo voltage to be charged by the photo voltage Er generating device is generated when the light emit de Set up light in response to an input control signal sends out. With this feature, a voltage drop in the Battery device to be checked by the leakage current is caused. Even if the output switching device therefore remains switched on for a long period of time no faulty switching due to the voltage drop on. The resulting reduction in charging time ver continues to improve the shifting process.

In a case where a capacitor for the battery device can be used when the voltage is above the capacitor is lower than a predetermined voltage value the charging process is stopped for a short period of time to a sufficiently high voltage at the gate of the charge half apply conductor element, whereby the drain current of Charge semiconductor element is increased. If the capacitor is charged to a predetermined value as by the second constant voltage diode to determine the charge potential is displayed, the charging process is completed by the short-circuiting semiconductor element of the switch bypass facility stopped, which is at least part of the  first constant voltage diode which shorts the off forms constant-voltage device, whereby the Gate potential of the charge semiconductor element is reduced and this is switched off. Even in the case of a semiconductor device which has a long on time and a short one non-conductive period, the driver current can source voltage for driving the output switching section be held at a predetermined value. Furthermore, can the loss that iso in the output semiconductor element gated gate is minimized. There a charge of the capacitor in the initial stage of the Ab switching process of the output semiconductor element with isol tem gate can be ended, it is possible to in the on to check the generated semiconductor element generated loss. Because the use of elements with a high breakthrough voltage in the output switching device and the output control device is not required, can be a half conductor device with built-in driver power source with high Realize reliability and low costs.

The foregoing description of preferred embodiments the present invention has been presented for the purpose of illustration and the description. It is not intended to invent 00903 00070 552 001000280000000200012000285910079200040 0002004215199 00004 00784g restrict to the exact form shown or here by exhausting, and there are modifications and changes given the above teaching possible or not in practicing the present invention. The Embodiments have been selected and described for the purpose ben to the basics of the invention and its practical one explainability to a specialist in this field to enable the invention in different Embodiments and with various modifications set as they are suitable for the special purpose. The scope of the present invention results from the  The entirety of the present application documents and their equi valence.

Claims (36)

1. Semiconductor device with built-in driver current source, characterized by :
an output switching device for switching power between first and second terminals externally of the semiconductor device;
output control means for controlling the output switching means in response to an input control signal;
battery means for supplying driver current to the output control means;
a charging device for charging the battery device from a circuit outside the semiconductor device, the charging device comprising:
a constant voltage output device, which is connected to the external circuit, for providing a charge reference potential,
charge switch means for directing charge current to the battery means from the external circuit in response to the charge reference potential, and
a charge termination device for turning off the charge switching device when a charging potential of the battery device reaches a predetermined charge potential level. 2. Semiconductor device with built-in driver current source according to claim 1, characterized in that
that the charge switching device comprises an insulated gate semiconductor element for conducting the charge current, where the insulated gate semiconductor element has a gate which receives the charge reference potential as a gate potential to turn on the semiconductor element, and
that the charge termination means includes means for determining the charge potential of the battery means, and switch bypass means connected to the gate of the insulated gate semiconductor element to bypass the constant voltage output source when the predetermined charge potential of the battery means reaches the predetermined level, to set the charge reference potential to a level sufficient to turn off the calf conductor element. 3. Semiconductor device with built-in drive power source according to claim 1, characterized in that the output switching device an output semiconductor element with iso gated gate. 4. A semiconductor device with a built-in driver current source according to claim 3, characterized in that the output control device has a gate driver device for loading and unloading the gate of the output semiconductor element with an insulated gate,
that the battery device has a capacitor for supplying current to the gate driver device,
that the charge switch device has a charge switch device to charge the capacitor with a voltage across the drain electrode and the source electrode of the output semiconductor element from insulated gate where the charge circuit device has a charging semiconductor element and a reverse current blocking diode which is in series between the drain electrode and the Capacitor are connected, as well as a resistor and a first constant voltage diode, which are connected in series between the drain electrode and the source electrode, the anode of the first constant voltage diode being connected to the source electrode of the output semiconductor element with an insulated gate, and the cathode of the first constant voltage diode the gate of the charging semiconductor element and the resistor is connected, and
that the charge termination device has a short circuit of the semiconductor element having a gate connected to the high potential side of the capacitor through a second constant voltage diode to short circuit at least part of the first constant voltage diode when the voltage across the capacitor reaches the predetermined charge potential level. 5. Semiconductor device with built-in drive power source according to claim 4, characterized in that the short closing semiconductor element on an NPN transistor points, and that the anode of the second constant voltage diode is connected to the base of the NPN transistor. 6. Semiconductor device with built-in drive power source according to claim 4, characterized in that the short closing semiconductor element with a semiconductor element insulated gate that the anode of the second  Constant voltage diode through a resistor to the source electrode of the output semiconductor element with insulated Gate is connected, and that the anode of the second con constant voltage diode with the gate of the short-circuiting half conductor element is connected to an insulated gate. 7. A semiconductor device with a built-in driver current source according to claim 1, characterized in that
that the output control means comprises means for emitting light in response to the input control signal, and means for generating a photo voltage in response to the emitted light, and
that the charging device has a device for conducting at least part of the photo voltage to the battery device in order to charge the battery device. 8. Semiconductor device with built-in drive power source according to claim 7, characterized in that the output control device a device for converting the Pho voltage in an output control signal, and means for transmitting the output control signal to the output switching device. 9. Semiconductor device with built-in driving current source according to claim 8, characterized in that the light emitting device has an LED, and that the Photo voltage generating device a phototransis has a torarray.   10. Semiconductor device with built-in drive power source according to claim 7, characterized in that the output switching device an output semiconductor element with iso gated gate. 11. A semiconductor device with a built-in driver current source according to claim 10, characterized in that
that the output control device has a gate driver device for charging and discharging the gate of the output semiconductor element with an insulated gate;
that the battery device comprises a capacitor for supplying current to the gate driver device;
that the charge switching device has a charge switching device for charging the capacitor with a voltage across the drain electrode and the source electrode of the output semiconductor element with insulated gate, the charge circuit device having a charging semiconductor element and a reverse current blocking diode connected in series between the drain electrode and the capacitor and a resistor and a first constant voltage diode which are connected in series between the drain electrode and the source electrode, the anode of the first constant voltage diode being connected to the source electrode of the output semiconductor element with an insulated gate, and the cathode of the first constant voltage diode being connected to the gate the charging semiconductor element and the resistor is connected; and
that the charge termination device has a short circuit of the semiconductor element which is provided with a gate which is connected to the high potential side of the capacitor via a second constant voltage diode to short circuit at least part of the first constant voltage diode when the voltage across the capacitor has the predetermined charge potential level reached. 12. Semiconductor device with built-in drive power source according to claim 11, characterized in that the short closing semiconductor element is an NPN transistor, and that the anode of the second constant voltage diode with the base of the NPN transistor is connected. 13. Semiconductor device with built-in driving current source according to claim 11, characterized in that the short closing semiconductor element with a semiconductor element insulated gate is that the anode is the second constant voltage diode through a resistor with the sourceelek trode of the output semiconductor element with insulated gate is connected, and that the anode of the second constant voltage diode to the gate of the short-circuiting half lead Terelementes is connected with an insulated gate. 14. Semiconductor device with built-in driving current source according to claim 1, characterized in that further a locking device is provided to the exit switching device to lock when the charge potential the battery device is lower than the predetermined one te charge potential level. 15. A semiconductor device with a built-in driver current source according to claim 14, characterized in that
that the output control means comprises a light emitting means for emitting light in response to the input control signal and a photo voltage generating means for generating a photo voltage in response to the emitted light, and
that the charging device has a device for guiding at least part of the photo voltage to the battery device in order to charge the battery device. 16. Semiconductor device with built-in driving current source according to claim 15, characterized in that the Aus gear control device a device for converting which has photo voltage in an output control signal, and a device for transferring the output tax signals to the output switching device. 17. Semiconductor device with built-in driving current source according to claim 16, characterized in that the light emitting device has an LED, and that the Photo voltage generating device a phototransis has a torarray. 18. Semiconductor device with built-in driving power source according to claim 14, characterized in that the Aus with an output semiconductor element insulated gate. 19. A semiconductor device with a built-in driver current source according to claim 18, characterized in that
that the output control device has a gate driver device for charging and discharging the gate of the output semiconductor element with an insulated gate;
that the battery device comprises a capacitor for supplying current to the gate driver device;
that the charge switching device has a charge circuit device for charging the capacitor with a voltage across the drain and the source electrode of the output semiconductor element with insulated gate, the charge circuit device having a charging semiconductor element and a reverse current blocking diode connected in series between the drain electrode and the capacitor are, and a resistor and a first constant voltage diode, which are connected in series between the drain electrode and the source electrode, wherein the anode of the first constant voltage diode is connected to the source electrode of the output semiconductor element with insulated gate, and the cathode of the first constant voltage diode with the gate of the charging semiconductor element and the resistor is connected, and
that the charge termination device has a short circuit of the semiconductor element, which is seen ver with a gate, which is connected to the high potential side of the capacitor via a second constant voltage diode connected to short-circuit at least part of the first constant voltage diode when the voltage across the capacitor predetermined charge potential level reached. 20. Semiconductor device with built-in driving current source according to claim 19, characterized in that the short closing semiconductor element is an NPN transistor, and that the anode of the second constant voltage diode with the base of the NPN transistor is connected.   21. Semiconductor device with built-in driving current source according to claim 19, characterized in that the short closing semiconductor element with a semiconductor element insulated gate is that the anode is the second constant voltage diode via a resistor to the source electrode trode of the output semiconductor element with insulated gate is connected, and that the anode of the second constant voltage diode with the gate of the short-circuiting half lead Insulated gate ter elements is connected. 22. Semiconductor device with built-in driving current source, characterized by:
an output switching device for switching power between first and second terminals externally from the semiconductor device;
output control means for controlling the output switching means in response to an input control signal;
battery means for supplying driver current to the output control means;
a charging device for charging the battery device from a circuit outside the semiconductor device, the charging device comprising a charge switching device for conducting charge current to the battery device from the external circuit; and
a locking device for locking the output switching device when a charge potential of the battery device is lower than a predetermined charge potential level. 23. A semiconductor device with a built-in driver current source according to claim 22, characterized in that
that the output control section comprises means for emitting light in response to the input control signal, and means for generating a photo voltage in response to the emitted light, and
that the charging device has a device for guiding at least part of the photo voltage to the battery device in order to charge the battery device. 24. Semiconductor device with built-in driving power source according to claim 23, characterized in that the Aus gear control device a device for converting the Has photo voltage in an output control signal, as well means for transmitting the output control signal to the output switching device. 25. Semiconductor device with built-in driving power source according to claim 24, characterized in that the light emitting device has an LED, and that the Photo voltage generating device a phototransis has a torarray. 26. Semiconductor device with built-in drive power source according to claim 22, characterized in that the Aus with an output semiconductor element insulated gate. 27. A semiconductor device with a built-in driver current source according to claim 26, characterized in that
that the output control means comprises a gate driver for charging and discharging the gate of the output semiconductor element with an insulated gate;
that the battery device comprises a capacitor for supplying current to the gate driver device;
that the charge switch device has a charge circuit device to charge the capacitor with a voltage across the drain and the source electrode of the output semiconductor element with insulated gate, the charge circuit device having a charging semiconductor element and a reverse current blocking diode in series between the drain electrode and the condensers sator are connected, and a resistor and a first constant voltage diode, which are connected in series between the drain electrode and the source electrode, wherein the anode of the first constant voltage diode is connected to the source electrode of the output semiconductor element with insulated gate, and the cathode of the first constant voltage diode the gate of the charging semiconductor element and the resistor is connected, and
that the charge termination device has a short circuit of the semiconductor element which is provided with a gate which is connected to the high potential side of the capacitor via a second constant voltage diode to short circuit at least part of the first constant voltage diode when the voltage across the capacitor predetermined charge potential level reached. 28. Semiconductor device with built-in driving power source according to claim 27, characterized in that the  short-circuiting semiconductor element is an NPN transistor, and that the anode of the second constant voltage diode the base of the NPN transistor is connected. 29. Semiconductor device with built-in driving current source according to claim 27, characterized in that the short closing semiconductor element with a semiconductor element insulated gate is that the anode is the second constant voltage diode via a resistor to the source electrode trode of the output semiconductor element with insulated gate is connected, and that the anode of the second constant voltage diode with the gate of the short-circuiting half lead Insulated gate ter elements is connected. 30. Semiconductor device with built-in driver current source, characterized by:
an output switching device for switching power between first and second terminals externally of the semiconductor device;
output control means for controlling the output switching means in response to an input control signal;
battery means for supplying driver current to the output control means; and
a charging device for charging the battery device from a circuit external to the semiconductor device,
wherein the charging device comprises a charge switching device for supplying charge current from the external circuit to the battery device;
wherein the output control section comprises means for emitting light in response to the input control signal, means for generating a photo voltage in response to the emitted light, and
wherein the charging means comprises means for directing at least a portion of the photo voltage to the battery means to charge the battery means. 31. Semiconductor device with built-in driving current source according to claim 30, characterized in that the Aus gear control device a device for converting which has photo voltage in an output control signal, and a device for transferring the output tax signals to the output switching device. 32. Semiconductor device with built-in driving power source according to claim 31, characterized in that the light emitting device has an LED, and that the Photo voltage generating device a phototransis has a torarray. 33. Semiconductor device with built-in driving current source according to claim 30, characterized in that the Aus with an output semiconductor element insulated gate. 34. Semiconductor device with built-in driver current source according to claim 33, characterized in that
that the output control means comprises a gate driver device for charging and discharging the gate of the output semiconductor element with an insulated gate;
that the battery device comprises a capacitor for supplying current to the gate driver device;
that the charge switch device has a charge circuit device to charge the capacitor with a voltage across the drain and the source electrode of the output semiconductor element with insulated gate, the charge circuit device having a charging semiconductor element and a reverse current blocking diode which is in series between the drain electrode and the capacitor are connected, as well as a resistor and a first constant voltage diode, which are connected in series between the drain electrode and the source electrode, the anode of the first constant voltage diode being connected to the source electrode of the output semiconductor element with an insulated gate, and the cathode of the first constant voltage diode to the gate of the charging semiconductor element and the resistor is connected, and
that the charge termination device has a short circuit of the semiconductor element which is provided with a gate which is connected to the side of the high potential of the capacitor via a second constant voltage diode to short circuit at least part of the first constant voltage diode when the voltage across the capacitor predetermined charge potential level reached. 35. Semiconductor device with built-in driving current source according to claim 34, characterized in that the short closing semiconductor element is an NPN transistor, and that the anode of the second constant voltage diode to the Base of the NPN transistor is connected.   36. Semiconductor device with built-in driving power source according to claim 34, characterized in that the short closing semiconductor element with a semiconductor element insulated gate is that the anode is the second constant voltage diode via a resistor to the source electrode trode of the output semiconductor element with insulated gate is connected, and that the anode of the second constant voltage diode with the gate of the short-circuiting half lead Insulated gate ter elements is connected.