DE4210538A1 - Monolithic integrated sensor for photoelectric incremental distance and angle measurement - has photoelectric sensor and signal processing components on silicon@ chip with regions around bonding islands recessed to depth of 50 to 100 microns - Google Patents

Monolithic integrated sensor for photoelectric incremental distance and angle measurement - has photoelectric sensor and signal processing components on silicon@ chip with regions around bonding islands recessed to depth of 50 to 100 microns

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Publication number
DE4210538A1
DE4210538A1 DE4210538A DE4210538A DE4210538A1 DE 4210538 A1 DE4210538 A1 DE 4210538A1 DE 4210538 A DE4210538 A DE 4210538A DE 4210538 A DE4210538 A DE 4210538A DE 4210538 A1 DE4210538 A1 DE 4210538A1
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Prior art keywords
chip
silicon
photoelectric
sensor
microns
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DE4210538A
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German (de)
Inventor
Arndt Steinke
Franz Dr Klapper
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CIS INSTITUT FUER MIKROSENSORIK GGMBH, 99097 ERFUR
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ZENTRUM fur INTELLIGENTE SENS
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Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
    • G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
    • G01D5/347—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
    • G01D5/34707—Scales; Discs, e.g. fixation, fabrication, compensation
    • G01D5/34715—Scale reading or illumination devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)

Abstract

The integrated sensor consists of a silicon chip with the regions about the bond islands recessed w.r.t. the chip surface by about 50 to 100 microns. The silicon chip also contains the components of a signal processor in addition to those of the photoelectric sensor. Silicon depth etching can be performed at any stage during the wafer preparation. Connections between the bond islands and the assembly board are pref. made via bonding wires below the chip surface. USE/ADVANTAGE - For measurements with resolution from 0.1 micron to 0.01 micron. Enables further integration of signal processing components with no part of contacted chip protruding above sensitive surface.

Description

Die Erfindung betrifft eine Anordnung, bei der ein mono­ lithisch integrierter Sensor für die fotoelektrische inkre­ mentale Weg- und Winkelmessung in eine für die weitere Handhabung von Inkrementalgebern erforderliche Bauform ge­ bracht wird und damit Wegauflösungen von < 0,1 µm bis 0,01 µm erreicht werden können.The invention relates to an arrangement in which a mono lithically integrated sensor for photoelectric incre mental path and angle measurement in one for the further Handling of incremental encoders required ge is brought and thus path resolutions from <0.1 µm to 0.01 µm can be achieved.

Die erfindungsgemäße Lösung findet vorzugsweise Anwendung in Meßsteuerprozessen, automatischen Prüf- und Meßprozes­ sen, Positioniereinrichtungen, Werkzeugmaschinenbau, Ver­ arbeitungsmaschinenbau, Robotereinrichtungen, Geräten des wissenschaftlichen Gerätebaus einschließlich astronomischer Geräte. Darüberhinaus ist der Einsatz der erfindungsgemäßen Lösung dort möglich, wo bedingt durch den erforderlichen kleinen Abstand zwischen Sensoroberfläche und Gegenkörper, bei Abstands- oder Näherungssensoren, keine weiteren Mon­ tageverbindungen und Häusungsteile über die Chipoberfläche hinausragen dürfen.The solution according to the invention is preferably used in measurement control processes, automatic test and measurement processes sen, positioning devices, machine tool construction, ver mechanical engineering, robotic devices, devices of the scientific engineering including astronomical Equipment. In addition, the use of the invention Solution possible where necessary small distance between sensor surface and counter body, with distance or proximity sensors, no further mon daily connections and housing parts over the chip surface may protrude.

Es ist bekannt, daß für höhere Auflösungen und Meßgenauig­ keiten von Weg- und Winkelmeßsystemen fotoelektrische Ver­ fahren vorherrschen. Es ist weiterhin bekannt, daß die Ab­ tasteinheiten von fotoelektrischen inkrementalen Längen- und Winkelmeßgeräten aus auf Substraten, vorrangig Leiter­ platten- oder Keramiksubstraten montierten fotoelektri­ schen Bauelementen wie Fotodioden, Fotoelementen oder Fo­ totransistoren besteht, wobei diese Anordnungen z. B. hy­ bridmäßig montiert und um weitere Bauelemente wie Diffe­ renzverstärker und Komparatoren ergänzt sind.It is known to be accurate for higher resolutions and measurements of path and angle measuring systems photoelectric ver driving prevail. It is also known that Ab probe units of photoelectric incremental length and angle measuring devices made of substrates, primarily conductors plate or ceramic substrates mounted photoelectri components such as photodiodes, photo elements or fo dead transistors, these arrangements such. B. hy mounted bridged and around other components such as Diffe limit amplifiers and comparators are added.

Zusätzlich besteht bei den bekannten Lösungen die Abtast­ einheit noch aus einer über den fotoelektrischen Bauele­ menten liegenden Abtastplatte, bestehend aus einer Glas­ platte mit Chromraster.In addition, there is the scanning in the known solutions unit still from one above the photoelectric component ment-based scanning plate, consisting of a glass plate with chrome grid.

Die Lösungen werden unter anderem von den Unternehmen Dr. Johannes Heidenhaim GmbH, Hohner- Elektrotechnik GmbH, T und R Elektronik GmbH, Feinmeßzeugfabrik Suhl GmbH oder der Carl Zeiss Jena GmbH angeboten.The solutions are provided by Dr. Johannes Heidenhaim GmbH, Hohner- Elektrotechnik GmbH, T and R Elektronik GmbH, Feinmeßzeugfabrik Suhl GmbH or offered by Carl Zeiss Jena GmbH.

Bekannte andere Lösungen sind in den Erfindungen DD 215162, DD 233649, DD 206424, DD 160862 und DD 226642 beschrieben, in denen monolithisch integrierte Lösungen gleichzeitig ein Fotodiodenarray und das Abtastgitter in Form eines Si-Chips enthalten. Known other solutions are in the inventions DD 215162, DD 233649, DD 206424, DD 160862 and DD 226642, in which monolithically integrated solutions simultaneously Photodiode array and the scanning grid in the form of an Si chip contain.  

Diese Erfindungen, die im wesentlichen die automatische Kompensation von Amplituden- und Phasenfehlern der Abtast­ signale sowie durch Oberwellen bedingte Signalfehler und die 2D- Messung enthalten, werden durch weitere Dokumen­ tationen und Forschungsberichte der Friedrich- Schiller- Universität Jena von Dr. F. Klapper wie dem Forschungsbe­ richt "Meßwertgeber für die automatische Bildauswertung 1985", der "Dokumentation und Gebrauchsanweisung LM 0.1 1986" sowie der "Anwenderinformation zur Längen-Winkel- und 2D-Messung 1981, 1983, 1987" einschließlich der Promo­ tionen von V. Schultze, 1979, R. Schmidt 1981 und W. Häm­ merle, weiter beschrieben.These inventions are essentially automatic Compensation of amplitude and phase errors of the samples signals and signal errors caused by harmonics and the 2D measurement included will be documented by other documents tations and research reports of the Friedrich Schiller University of Jena from Dr. F. Klapper such as the Forschungsbe "Sensor for automatic image evaluation 1985 ", the" Documentation and Instructions for Use LM 0.1 1986 "as well as the" User information on the length-angle and 2D measurement 1981, 1983, 1987 "including the promo tions by V. Schultze, 1979, R. Schmidt 1981 and W. Häm merle, further described.

Der Nachteil der bekannten technischen Lösungen besteht darin, daß in dem einen Fall die Abtasteinheit aus dis­ kreten Bauelementen aufgebaut ist, wodurch eine weitere Miniaturisierung nicht mehr möglich ist sowie einen er­ heblichen Montageaufwand für die gegenseitige Zuordnung der einzelnen Bauelemente erfordert. Außerdem zeigen sol­ che Abtasteinheiten erhebliche von den Justierparametern abhängige Signalfehler. Die aus einem Chip bestehende Ab­ tasteinheit vermeidet zwar diese Nachteile, ist aber in seiner Anwendung dadurch eingeschränkt, daß die an den Kontaktflächen des Chips angesetzten Bonddrähte über die sensistive Fläche hinausgehen und zusammen mit der zu ih­ rem mechanischen und chemischen Schutz notwendigen Ab­ deckungen die justierfähigen Zuordnung der Abtasteinheit zur Meßverkörperung (Maßstab) behindern. Diese Schwierig­ keit kann man bei der bekannten Lösung nur dadurch ver­ meiden, indem man die Kontaktstellen des Chips so weit von der sensitiven Fläche entfernt, daß sie außerhalb der abzutastenden Meßverkörperung liegen, was aber eine we­ sentliche Vergrößerung des Chips zur Folge hat.The disadvantage of the known technical solutions is in that in the one case the scanning unit from dis Crete components is built, creating another Miniaturization is no longer possible as well considerable assembly effort for the mutual assignment of the individual components required. Also show sol che scanning units considerable of the adjustment parameters dependent signal errors. The Ab consisting of a chip probe unit avoids these disadvantages, but is in limited its application by the fact that the Contact areas of the chip attached bonding wires over the sensitive area go out and together with the to ih rem mechanical and chemical protection necessary Ab covers the adjustable assignment of the scanning unit to hinder the measuring standard (scale). This difficult speed can only ver in the known solution avoid by looking at the contact points of the chip as far away from the sensitive area that it is outside the to be scanned measuring standard, but what a we substantial increase in the chip results.

Der Erfindung liegt die Aufgabe zugrunde, einen monoli­ thisch integrierten fotoelektrischen Sensor für die in­ krementale Längen- und Winkelmessung zu schaffen, der auch eine weitere Integration von Komponenten der Signal­ verarbeitung ermöglicht und keine Bereiche des kontaktier­ ten Chips zuläßt, die sicher über die sensitive Fläche hinausragen. Dabei sind die Kontaktflächen des Sensorchips gegenüber der Chipoberfläche so anzuordnen, daß die an den Kontaktflächen angesetzten Bonddrähte zusammen mit der zu deren Versiegelung notwendigen Vergußmasse nicht die Chipoberfläche überragen.The invention has for its object a monoli thisch integrated photoelectric sensor for the in to create incremental length and angle measurement, the also further integration of components of the signal Processing enables and no areas of contact allows chips that are safe over the sensitive area protrude. Here are the contact surfaces of the sensor chip to be arranged opposite the chip surface so that the the contact surfaces attached bonding wires together with the potting compound necessary for sealing them not the Exceed the chip surface.

Erfindungsgemäß wird die Aufgabe dadurch gelöst, indem chipseitig die Bondinseln bis zu 100 µm versenkt und eine sichere Kontaktierung von Metallsystemen innerhalb des Chips genauso garantiert wird wie die Verbindung von Bond­ inseln zur Montageplatte, indem die aktive Sensorfläche frei von Restmaterialien der Montage- und Häusungstechno­ logie ist und die aktive Sensorfläche in einer Ebene mit der umgebenen Fläche des Models liegt und das dabei garan­ tiert wird, daß die Chipkanten flashfrei sind.According to the invention the object is achieved in that on the chip side, the bond pads are sunk down to 100 µm and one secure contacting of metal systems within the Chips are guaranteed just like the bond from Bond islands to the mounting plate by the active sensor surface  free of residual materials from assembly and housing technology logic and the active sensor surface in one level the surrounding surface of the model and this is guaranteed It is tiert that the chip edges are flash-free.

Erfindungsgemäß wird innerhalb des technologischen Prozes­ ses der Herstellung von integrierten Schaltkreisen auf ei­ nem Silizium- Wafer mit mikroelektronischen Schicht- und Strukturierungsverfahren eine Absenkung der Bondinseln re­ alisiert. Die Absenkung der Bondinseln erfolgt vorzugswei­ se über eine Silizium- Tiefenätzung in einer Größenordnung von 50 µm bis zu 100 µm. Diese Tiefenätzung kann an jeder Stelle des Präparationsablaufes der Siliziumscheibe erfol­ gen und somit sowohl vor, während als auch nach Herstel­ lung der integrierten Sensoren und Signalverarbeitung durchgeführt werden. Wichtig ist, daß nach der Silizium­ tiefenätzung eine Isolation der freiliegenden Siliziumbe­ reiche erfolgt und damit keine elektrische Kurzschlußge­ fahr weiter besteht, vorzugsweise durch eine chemische Dampfabscheidung von SiO2, Si3N4 oder thermische Oxyda­ tion. Diese Siliziumtiefenätzung erfolgt vorrangig in den Bereichen der später herzustellenden Bondinseln. Die Ver­ bindungsmetallisierung zwischen den elektronischen Schal­ tungsteilen und der Bondinsel ist so auszuführen, daß die Metallbahn über die durch die Silizium- Tiefenätzung bei (100)- Silizium- Material entstandene Böschung mit einem hohen Überdeckungsgrad geführt wird. Unter Berücksichti­ gung der erforderlichen Tranzparenz der Isolatorschichten für fotoelektrische integrierte Sensoren wird anschlie­ ßend eine besonders mechanisch und chemisch resistente Passivierungsschicht aufgebracht, die vorrangig mit CVD- oder Sputterverfahren realisiert werden kann. Nach den be­ kannten Lösungen erfolgt anschließend eine Chiptrennung innerhalb des Wafers. Erfindungsgemäß wird während der Herstellung des Sensorbauelementes, nachdem das Chip ein­ zeln oder über Zwischenträger mit gleichen oder kleinen Ausdehnungskoeffizienten auf das Substrat, das vorzugs­ weise aus Leiterplattenmaterial oder Keramik besteht, montiert wurde, die Kontaktierung zwischen den Bondinseln des Silizium- Chips und der Montageplatte derart vorgenom­ men, daß beispielsweise der Bonddraht wesentlich unterhalb der Chipoberfläche aus dem Bondinselbereich herausgeführt wird und danach auf der Montageplatte kontaktiert wird. Die Verbindung hat so zu erfolgen, daß über dem Bonddraht noch ausreichend Volumen für die Vergußmasse vorhanden ist. Anschließend erfolgt die Umhüllung des montierten drahtgebondeten Chips mit entsprechender Vergußmasse der­ art beispielsweise über Spritzpreßformen, daß die abge­ senkten Bondinselbereiche als auch das Volumen um die Montageplatte vollständig mit Vergußmasse ausgefüllt ist.According to the invention, a lowering of the bond pads is realized within the technological process of producing integrated circuits on a silicon wafer using microelectronic layering and structuring processes. The lowering of the bond pads is preferably carried out using deep silicon etching in the order of 50 µm to 100 µm. This deep etching can take place at any point in the preparation process of the silicon wafer and can thus be carried out both before, during and after manufacture of the integrated sensors and signal processing. It is important that after the silicon deep etching there is isolation of the exposed silicon areas and thus there is no further electrical short-circuit danger, preferably by chemical vapor deposition of SiO 2 , Si 3 N 4 or thermal oxidation. This deep silicon etching takes place primarily in the areas of the bond islands to be produced later. The connection metallization between the electronic circuit parts and the bonding pad is to be carried out in such a way that the metal path is guided with a high degree of coverage over the slope created by the deep silicon etching at (100) - silicon material. Taking into account the required transparency of the insulator layers for photoelectric integrated sensors, a particularly mechanically and chemically resistant passivation layer is subsequently applied, which can primarily be implemented using CVD or sputtering methods. After the known solutions, chip separation then takes place within the wafer. According to the invention, during the manufacture of the sensor component after the chip has been mounted individually or via intermediate carriers with the same or small expansion coefficients on the substrate, which preferably consists of printed circuit board material or ceramic, the contact between the bonding pads of the silicon chip and the mounting plate is such vorgenom men that, for example, the bond wire is led out substantially below the chip surface from the bond pad area and is then contacted on the mounting plate. The connection has to be made in such a way that there is still sufficient volume for the sealing compound above the bonding wire. Subsequently, the mounted wire-bonded chip is coated with a suitable casting compound of the type, for example, by injection molding that the lowered bond island areas and the volume around the mounting plate are completely filled with casting compound.

Claims (5)

1. Anordnung eines monolithisch integrierten Sensors für die fo­ toelektrische inkrementale Weg- und Winkelmessung der aus ei­ nem Silizium- Chip, dadurch gekennzeichnet, daß innerhalb des Silizium- Chip die Bereiche um die Bondinseln gegenüber dem Niveau der Chipoberfläche um ca. 50 µm bis 100 µm abgesenkt werden.1. Arrangement of a monolithically integrated sensor for photoelectric incremental displacement and angle measurement of egg nem silicon chip, characterized in that within the silicon chip the areas around the bond pads compared to the level of the chip surface by about 50 microns to 100 µm can be reduced. 2. Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß der In­ halt des Silizium- Chip außer dem fotoelektrischen Sensor auch aus Komponenten einer Signalverarbeitung besteht.2. Arrangement according to claim 1, characterized in that the In hold the silicon chip in addition to the photoelectric sensor consists of components of a signal processing. 3. Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß die Si­ liziumtiefenätzung an jeder beliebigen Stelle der Waferpräpa­ ration erfolgen kann.3. Arrangement according to claim 1, characterized in that the Si deep silicon etching at any point on the wafer preparation ration can take place. 4. Anordnung eines monolithisch integrierten Sensors, dadurch ge­ kennzeichnet, daß die Verbindung zwischen den Bondinseln des Silizium- Chips und der Montageplatte vorzugsweise mittels Bonddraht unterhalb des Niveaus der Chipoberfläche verläuft.4. Arrangement of a monolithically integrated sensor, thereby ge indicates that the connection between the bond pads of the Silicon chips and the mounting plate preferably by means of Bond wire runs below the level of the chip surface. 5. Anordnung nach Anspruch 4, dadurch gekennzeichnet, daß das Vergießen oder Ausspritzen des Bauelementes so erfolgt, daß der Bonddraht dabei vollständig umhüllt wird und die Umhül­ lungsmasse nicht das Niveau der Silizium- Chipoberfläche überschreitet.5. Arrangement according to claim 4, characterized in that the Casting or ejection of the component takes place in such a way that the bond wire is completely covered and the cover not the level of the silicon chip surface exceeds.
DE4210538A 1992-03-31 1992-03-31 Monolithic integrated sensor for photoelectric incremental distance and angle measurement - has photoelectric sensor and signal processing components on silicon@ chip with regions around bonding islands recessed to depth of 50 to 100 microns Withdrawn DE4210538A1 (en)

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DE4210538A DE4210538A1 (en) 1992-03-31 1992-03-31 Monolithic integrated sensor for photoelectric incremental distance and angle measurement - has photoelectric sensor and signal processing components on silicon@ chip with regions around bonding islands recessed to depth of 50 to 100 microns

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DE4210538A DE4210538A1 (en) 1992-03-31 1992-03-31 Monolithic integrated sensor for photoelectric incremental distance and angle measurement - has photoelectric sensor and signal processing components on silicon@ chip with regions around bonding islands recessed to depth of 50 to 100 microns

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450439A1 (en) * 1974-10-24 1976-04-29 Standard Elektrik Lorenz Ag Non contract measurement of relative speed - is of reflecting or self-luminous object with statistically rough surface and has optoelectrical pickup
DE1962099B2 (en) * 1968-12-13 1979-06-13 National Research Development Corp., London Optical index grating and process for its manufacture
DE3209043A1 (en) * 1981-03-12 1982-11-18 Mitutoyo Mfg. Co., Ltd., Tokyo PHOTOELECTRICAL ENCODER
EP0101536A1 (en) * 1982-08-06 1984-02-29 Robert Bosch Gmbh Relative movement detector
US4622574A (en) * 1985-07-29 1986-11-11 The Perkin-Elmer Corporation Semiconductor chip with recessed bond pads
DE4027732A1 (en) * 1990-09-01 1992-03-05 Thiedig Ullrich CAMERA CHIP FOR A CAMERA DETECTING AND EVALUATING DOTS

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1962099B2 (en) * 1968-12-13 1979-06-13 National Research Development Corp., London Optical index grating and process for its manufacture
DE2450439A1 (en) * 1974-10-24 1976-04-29 Standard Elektrik Lorenz Ag Non contract measurement of relative speed - is of reflecting or self-luminous object with statistically rough surface and has optoelectrical pickup
DE3209043A1 (en) * 1981-03-12 1982-11-18 Mitutoyo Mfg. Co., Ltd., Tokyo PHOTOELECTRICAL ENCODER
EP0101536A1 (en) * 1982-08-06 1984-02-29 Robert Bosch Gmbh Relative movement detector
US4622574A (en) * 1985-07-29 1986-11-11 The Perkin-Elmer Corporation Semiconductor chip with recessed bond pads
DE4027732A1 (en) * 1990-09-01 1992-03-05 Thiedig Ullrich CAMERA CHIP FOR A CAMERA DETECTING AND EVALUATING DOTS

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