DE4138779A1 - Contacting integrated circuit on flexible circuit board, glass or ceramic substrate - fixing IC using organic resin which contains highly conductive particles with irregular structure - Google Patents

Contacting integrated circuit on flexible circuit board, glass or ceramic substrate - fixing IC using organic resin which contains highly conductive particles with irregular structure

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Publication number
DE4138779A1
DE4138779A1 DE4138779A DE4138779A DE4138779A1 DE 4138779 A1 DE4138779 A1 DE 4138779A1 DE 4138779 A DE4138779 A DE 4138779A DE 4138779 A DE4138779 A DE 4138779A DE 4138779 A1 DE4138779 A1 DE 4138779A1
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Germany
Prior art keywords
particles
contacting
integrated circuit
coated
conductive particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE4138779A
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German (de)
Inventor
Bruno Dr Hampel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LCD MIKROELEKTRONIK DR HAMPEL
Original Assignee
LCD MIKROELEKTRONIK DR HAMPEL
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Publication date
Application filed by LCD MIKROELEKTRONIK DR HAMPEL filed Critical LCD MIKROELEKTRONIK DR HAMPEL
Priority to DE4138779A priority Critical patent/DE4138779A1/en
Publication of DE4138779A1 publication Critical patent/DE4138779A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/5328—Conductive materials containing conductive organic materials or pastes, e.g. conductive adhesives, inks
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    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

The integrated circuit is contacted on a conductive track structure with its active side pointing downwards towards the track structure in flip-chip mode. The integrated circuit is secured by an organic resin, contg. highly conductive particles with irregular structure. Pref. the particles consist of ceramic particles coated with graphite, alternately they are suitable grain size crystals, also coated with graphite. The particles may be ceramic or quartz particles, coated with pyrolytic carbon. Metal film may be also used as particle coating. The grain size is typically between 3 and 50 microns. USE/ADVANTAGE - For tape automated bonding, also for contacting IC directly onto LCD using Chip-on-Board method. Reliability of hybrid circuit or flip-chip assembly is increased. Weight is reduced.

Description

Die Erfindung bezieht sich auf eine Methode zur Kontaktierung von elektronischen Bauelementen wie Widerstände, Dioden, Transistoren und integrierten Schaltungen mit ihrem Trägersubstrat. Insbesondere bezieht sie sich auf die Kontaktierung von integrierten Schaltungen auf flexible Leiterfolien und hier wiederum auf die besondere Form der auf Film gebondeten Chips (TAB = tape automated bonding) sowie auf die Kontaktierung von IC′s auf Glas- oder Keramik-Substrate, wie es in der Hybrid­ technik oder bei der Kontaktierung von IC′s direkt auf Flüssig­ kristall-Anzeigen üblich ist (CoB = Chip on Board).The invention relates to a method for contacting electronic components such as resistors, diodes, transistors and integrated circuits with their carrier substrate. In particular, it relates to the contacting of integrated circuits on flexible conductor foils and here again on the special shape of the chips bonded on film (TAB = tape automated bonding) and the contacting of IC’s on glass or ceramic substrates, as in the hybrid technology or when contacting IC's directly on liquid crystal displays is common (CoB = Chip on Board).

Die Kontaktierung elektronischer Bauelemente auf ihrer Unterlage (= Substrat) wird entweder durch Löten oder durch Bonden oder durch einfaches Anpressen bewerkstelligt. Während das Anpressen nur in einfachen Fällen und in der Starkstromtechnik Anwendung findet, sind in der Schwachstromtechnik und in der Mikroelektronik Löten und Bonden die bevorzugten Verfahren. Bei IC′s wiederum ist Bonden das bei weitem am meisten benutzte Verfahren. Contacting electronic components on their base (= Substrate) is either by soldering or by bonding or accomplished by simple pressing. During the pressing only in simple cases and in heavy current technology are in low-voltage technology and in Microelectronics soldering and bonding are the preferred methods. At IC’s, in turn, is by far the most used bonding Method.  

Prinzipiell wäre es aber wünschenswert, auch beim Kontaktieren von IC′s Verfahren anzuwenden, die dem Reflowlöten verwandt sind. Dies sind die verschiedenen Flip-Chip-Verfahren, die insbesondere beim Inner-Lead-Bonding des TAB angewandt werden. Abb. 1 gibt eine schematische Darstellung des Aufbaues eines sogenannten Bumps, der auf der Kontaktfläche eines IC aufgebaut werden muß, um eine Verbindung mit der Leiterplatte durch Löten usw. zu erreichen. Diese Verfahren vergrößern u. a. die Zuverlässigkeit von Hybridschaltungen, sie erlauben eine noch dichtere Packung als mit gebondeten Chips, damit auch Gewichtseinsparungen und damit insgesamt eine Reduktion der Systemkosten.In principle, however, it would be desirable to also use methods that are related to reflow soldering when contacting IC's. These are the various flip-chip methods that are used in particular for the inner lead bonding of the TAB. Fig. 1 gives a schematic representation of the structure of a so-called bump, which must be built on the contact surface of an IC in order to achieve a connection to the circuit board by soldering, etc. Among other things, these methods increase the reliability of hybrid circuits, they allow an even denser packaging than with bonded chips, thus also saving weight and thus reducing the overall system costs.

Die Herstellung der Bumps ist allerdings ein komplizierter Prozeß mit mehreren Schritten:The production of the bumps is complicated, however Multi-step process:

  • - Titan/Wolfram-Sputtern,- titanium / tungsten sputtering,
  • - Kupfer-Sputtern,- copper sputtering,
  • - Photoresist-Prozesse,- photoresist processes,
  • - galvanisch Kupfer,- galvanic copper,
  • - galvanisch Zinn,- galvanic tin,
  • - Ätzen,- etching,

der dazu führt, daß insbesondere bei nicht sehr großen Serien die Verfahren nicht oft angewandt werden, da eine Reihe spezieller Werkzeuge für jeden Chip angefertigt werden muß.which leads to the fact that the Procedures are not often used because of a number of special ones Tools for every chip must be made.

Es ist die Aufgabe der vorliegenden Erfindung die Nachteile des Herstellungsverfahrens der Bumps zu vermeiden, ohne die Vorteile des Flip-Chip-Verfahrens zu beeinträchtigen. Genauer gesagt, ein Verfahren zur Flip-Chip-Montage zu finden, das mit wesentlich weniger Prozess-Schritten auskommt.It is the object of the present invention the disadvantages of Avoid the manufacturing process of the bumps without the benefits of the flip chip process. More specifically, a Methods of flip-chip assembly to find that with essential fewer process steps.

Die Befestigung des Flip-Chips auf dem mit Leiterbahnen versehenen Substrat erfolgt nicht durch Löten, sondern durch Kleben mit einem Heißsiegelkleber, der nur in einer Richtung, nämlich in einer Richtung senkrecht zur Chip-Oberfläche die Elektrizität leitet.The attachment of the flip chip on the with conductor tracks provided substrate is not done by soldering, but by Glue with a heat seal adhesive that is only in one direction namely in a direction perpendicular to the chip surface Electricity conducts.

Die Abb. 2, 3 und 4 zeigen, wie eine solche Verbindung aufgebaut ist. Figures 2, 3 and 4 show how such a connection is constructed.

Die Abb. 2 stellt einen integrierten Schaltkreis dar, auf den man von der Seite der Kontakte, der sogenannten Pads, herblickt. Die Größe der Pads ist etwa 100×100 µm. Die Masse des Schaltkreises 1 ist aus Silicium mit den leitenden Pads 2 aus Aluminium. Fig. 2 shows an integrated circuit, which can be seen from the side of the contacts, the so-called pads. The size of the pads is approximately 100 × 100 µm. The mass of the circuit 1 is made of silicon with the conductive pads 2 made of aluminum.

In der Abb. 3 ist der integrierte Schaltkreis auf eine Leiterplatte aufgeklebt. Die Leiterplatte 3 trägt auf ihrer Oberfläche Leiterbahnen 4. Diese liegen jeweils den leitenden Pads auf dem IC gegenüber. In Fig. 3 the integrated circuit is glued to a circuit board. The circuit board 3 carries conductor tracks 4 on its surface. These are located opposite the conductive pads on the IC.

Abb. 4 zeigt den mit "Detail" bezeichneten Teil des Verbundes unter stärkerer Vergrößerung. Fig. 4 shows the part of the assembly labeled "Detail" under greater magnification.

Man erkennt, daß im Bereich der Klebung 5 eine Reihe von Teilchen 6 sich befinden, die den elektrischen Strom leiten und die daher den elektrischen Kontakt zwischen den Leiterbahnen 4 der Leiterplatte und den leitenden Pads 2 auf dem integrierten Schaltkreis herstellen.It can be seen that in the area of the adhesive 5 there are a number of particles 6 which conduct the electrical current and which therefore produce the electrical contact between the conductor tracks 4 of the circuit board and the conductive pads 2 on the integrated circuit.

Zwischen zwei benachbarten Leiterbahnen ist dagegen kein Kontakt möglich, da die Durchmesser der leitenden Teilchen deutlich kleiner sind als die Abstände der einzelnen Leiterbahnen.In contrast, there is no contact between two adjacent conductor tracks possible because the diameter of the conductive particles is clear are smaller than the distances between the individual conductor tracks.

Abb. 3 stellt die Verhältnisse längs der Schnittlinie II der Abb. 2 dar:
Man sieht, daß in den Bereichen 2-4, d. h. wo Leiterbahnen und IC-Pads sich gegenüberliegen, Kontakt zwischen ihnen möglich ist. Zwischen benachbarten Leiterbahnen bzw. Pads ist dagegen kein Kontakt möglich, weil die Abstände der Teilchen groß gegenüber ihren Durchmessern sind. Fig. 3 shows the conditions along section line II of Fig. 2:
It can be seen that in areas 2-4 , ie where conductor tracks and IC pads face each other, contact between them is possible. In contrast, no contact is possible between adjacent conductor tracks or pads, because the distances between the particles are large compared to their diameters.

Durch die hier gegebene Beschreibung ist die Erfindung in keiner Weise eingeschränkt. Die Methode der anisotropen Klebung ist mit praktisch allen Bauelementen möglich, die ausreichend flache Kontaktflächen besitzen. Es können also auch alle SMD (surface mount devices)-Bauteile verwendet werden.By the description given here, the invention is in none Way limited. The method of anisotropic bonding is with practically all components possible that are sufficiently flat Have contact areas. So all SMD (surface  mount devices) components are used.

Als Substrate sind geeignet: alle Schichtschaltungen wie Leiter­ platten, flexible Leiterfolien, Hybridschaltungen vom Dickfilm- oder Dünnfilmtyp, flexible Leiterfolien mit HPTF-Leitern, Flüssigkristallanzeigen, Halbleiter und jedes andere Basismaterial mit Kontaktflächen ausreichender Ebenheit.Suitable substrates are: all layer circuits such as conductors plates, flexible conductor foils, hybrid circuits from thick film or Thin film type, flexible conductor foils with HPTF conductors, Liquid crystal displays, semiconductors and any other Base material with contact surfaces of sufficient flatness.

Als Kleber können alle Klebstoffe verwendet werden, die beim Aneinanderfügen der Teile keine Lösungsmittel mehr enthalten. Besonders geeignet sind Reaktionsklebstoffe vom 2-Komponenten- Typ, die kalthärtend oder warmhärtend sein können.All adhesives can be used as an adhesive Joining the parts no longer contain solvents. Reaction adhesives from the 2-component Type that can be cold curing or heat curing.

Einkomponenten-Klebstoffe sind ebenfalls geeignet. Unter ihnen die sogenannten Heißsiegelkleber. Diese werden beim Erwärmen auf höhere Temperaturen klebrig und besitzen ausreichende Adhäsions- Eigenschaften, wenn die Klebefuge wieder abgekühlt wird.One-component adhesives are also suitable. Among them the so-called heat seal adhesive. These will heat up when higher temperatures sticky and have sufficient adhesion Properties when the adhesive joint cools down again.

Besonders geeignet sind Heißsiegelkleber vom Reaktionstyp. Diese sind zunächst thermoplastisch und härten unter Wärmeeinwirkung oder unter dem Einfluß von Wasser zu duroplastischen Polymeren aus. Die Klebung ist also nicht mehr ohne Zerstörung lösbar. Reaction type heat seal adhesives are particularly suitable. These are initially thermoplastic and harden under the influence of heat or under the influence of water to form thermosetting polymers out. The bond can therefore no longer be removed without destruction.  

Als elektrisch leitende Partikel können viele Metalle in Form kleiner Kügelchen, Fasern oder unregelmäßig geformter Körper ver­ wendet werden. Auch Nichtleiter, die mit einer leitenden Beschichtung versehen sind, wie z. B. mit Silber, Gold oder anderen Edelmetallen belegte Glasfasern sind brauchbar. Kohlefasern, Graphitkörner, Halbleiterpulver aller Art und geeigneter Korngröße sind weitere Beispiele.Many metals can be in the form of electrically conductive particles small balls, fibers or irregularly shaped bodies be applied. Even non-conductors with a conductive Coating are provided, such as. B. with silver, gold or Glass fibers coated with other precious metals can be used. Carbon fibers, graphite grains, semiconductor powder of all kinds and suitable grain size are further examples.

Insbesondere sind mit gut leitenden Kohleschichten versehene scharfkantige Keramik- oder Kristallteilchen verwendbar.In particular, are provided with well-conductive carbon layers sharp-edged ceramic or crystal particles can be used.

Diese haben besondere Vorteile gegenüber den bisher verwendeten Metallkugeln oder Metallplättchen: Sie dringen wegen ihrer harten und scharfkantigen Gestalt oberflächlich in die beiden zu ver­ bindenden Leiter ein. Dies ergibt eine erhöhte Sicherheit der Kontaktierung insbesondere unter den Bedingungen der Lagerung unter Hitze und Feuchte.These have particular advantages over those previously used Metal balls or metal plates: They penetrate because of their hard and sharp-edged shape superficially in the two binding leader. This results in an increased security of the Contacting especially under the conditions of storage under heat and humidity.

Brauchbar sind z. B. Quarzteilchen, die in einem Wirbelschicht­ ofen mit pyrolytischem Kohlenstoff belegt worden sind. Ein weiterer Vorteil der Verwendung von Keramik- oder Quarzteilchen ist ihr niedriges spezifisches Gewicht. Dadurch wird die Sedi­ mentation der in der Klebstoffpräparation suspendierten leitenden Teilchen unterbunden oder doch sehr zurückgedrängt. Are z. B. quartz particles in a fluidized bed furnace has been coated with pyrolytic carbon. A Another advantage of using ceramic or quartz particles is their low specific weight. This will make the Sedi mentation of the conductive suspended in the adhesive preparation Particles prevented or pushed back very much.  

Die Erfindung wird jetzt an Hand einiger Beispiele erläutert, jedoch sind diese Beispiele keineswegs einschränkend, und viele andere Kombinationen der erfindungsgemäßen Merkmale sind denkbar.The invention will now be explained on the basis of a few examples, however, these examples are by no means restrictive, and many other combinations of the features according to the invention are conceivable.

Beispiel 1: Herstellung einer HeißsiegelpräparationExample 1: Preparation of a heat seal preparation

100 g Polyurethan-Präpolymer-Lösung (mit 60% Feststoffgehalt in Äthylacetat) werden mit 40 g Polyester-Harz-Lösung (30% Feststoffgehalt in Benzylalkohol) und 2 g Kohlepigment, bestehend aus mit Graphit belegtem Quarzmehl von etwa 20 µm Korngröße vermischt. Die Mischung hat bald nach der Herstellung eine für den Siebdruck geeignete Viskosität. Die Mischung soll innerhalb eines Tages verwendet werden. Mit einem Drucksieb von 90 Maschen pro cm wird die Masse auf das Trägersubstrat gedruckt (3 in Abb. 3). Nach Ablüften setzt man den IC auf. Er wird mit einer Vakuum-Andruck-Vorrichtung auf das Trägersubstrat gedrückt und in dieser Vorrichtung auf 140° etwa 1 min erhitzt. Nach Abkühlung sind alle Pads des IC mit ihren Anschlußfahnen verbunden. 100 g polyurethane prepolymer solution (with 60% solids content in ethyl acetate) are mixed with 40 g polyester resin solution (30% solids content in benzyl alcohol) and 2 g carbon pigment, consisting of quartz powder coated with graphite and having a particle size of about 20 µm. The mixture soon has a viscosity suitable for screen printing. The mixture should be used within a day. The mass is printed on the carrier substrate with a printing screen of 90 meshes per cm ( 3 in Fig. 3). After venting the IC is put on. It is pressed onto the carrier substrate with a vacuum pressure device and heated to 140 ° in this device for about 1 min. After cooling, all pads of the IC are connected to their connecting lugs.

Beispiel 2: Herstellung eines 2-Komponentenklebers mit anisotroper LeitfähigkeitExample 2: Production of a 2-component adhesive with anisotropic conductivity

100 g eines Epoxid-Harzes Lekutherm (Bayer AG) werden mit 1,75 g eines Kohlenstoff-Quarz-Pigments der Korngröße 5-7 µm gemischt = Komponente A.100 g of an epoxy resin Lekutherm (Bayer AG) with 1.75 g a carbon-quartz pigment with a grain size of 5-7 µm = Component A.

Diese wird unmittelbar vor der Anwendung mit dem Härter 937 von CIBA-Geigy gemischt = Komponente B.This is hardened with Hardener 937 by CIBA-Geigy mixed = component B.

Das Mischungsverhältnis ist
Komponente A 1 Teil
Komponente B 0,4 Teile.The mixing ratio is
Component A 1 part
Component B 0.4 parts.

Beispiel 3: Kontaktierung eines IC auf eine LCDExample 3: Contacting an IC on an LCD

Die Anschlüsse der LCD auf dem ITO-gesputterten Glas werden so herangeführt, daß, wie in der Abb. 5 gezeigt, die Anschlußpads des IC direkt auf die Anschlußzungen passen. Von den Anschlußzungen müssen wenigstens die Zuleitungen für die Speisespannung in hochleitender Ausführung vorliegen, z. B. in Silber, Nickel oder Gold. The connections of the LCD on the ITO sputtered glass are brought up in such a way that, as shown in Fig. 5, the connection pads of the IC fit directly onto the connection tongues. Of the connecting tongues, at least the supply lines for the supply voltage must be in a highly conductive version, e.g. B. in silver, nickel or gold.

Mit einem Tampon-Drucker wird eine etwa 5 µm dicke Schicht des 2- Komponenten-Klebers aus Beispiel 2 auf das Glas aufgetragen und anschließend der umgedrehte IC aufgesetzt. Unter leichtem Druck läßt man den Kleber aushärten, was nach etwa 4 Stunden bei Raumtemperatur bzw. nach 10 min bei 80°C der Fall ist.With a tampon printer, an approximately 5 µm thick layer of 2- Component adhesive from Example 2 applied to the glass and then the upside down IC is put on. Under light pressure let the glue harden, which after about 4 hours Room temperature or after 10 min at 80 ° C is the case.

Beispiel 4: Kontaktierung eines IC auf eine flexible SchaltungExample 4: Contacting an IC on a flexible circuit

Auf einer 25 µm starken Kapton-Folie mit einer Beschichtung mit 25 µm Kupfer wird das gleiche Muster wie in Beispiel 3 in das Kupfer geätzt.On a 25 µm thick Kapton film with a coating 25 µm copper is the same pattern as in Example 3 in that Etched copper.

Die flexible Schaltung wird nunmehr mit der Heißsiegelmasse aus Beispiel 1 bedruckt. Die Teilchen haben jedoch eine Korngröße von 4-6 µm. Nunmehr erfolgt das Aufsetzen des umgedrehten IC und das Aufsiegeln des IC bei ca. 130°C unter leichtem Druck.The flexible circuit is now made with the heat sealant Example 1 printed. However, the particles have a grain size of 4-6 µm. Now the inverted IC and sealing the IC at approx. 130 ° C under light pressure.

Der Anschluß an die LCD wird in normaler Heat-Seal-Technik konstruiert.The connection to the LCD is in normal heat seal technology constructed.

Claims (6)

1. Kontaktierung eines integrierten Schaltkreises (integrated circuit = IC) auf eine Leiterbahnstruktur für die Ansteuerung des IC in flip-chip-Bauweise (d. h. die aktive Seite des IC ist nach unten gerichtet, wo sich die Leiterbahnstruktur befindet) dadurch gekennzeichnet, daß die Fixierung des IC mit einem organischen Harz erfolgt, welches hochleitende Partikel mit unregelmäßiger Struktur enthält.1. Contacting an integrated circuit (integrated circuit = IC) on a conductor structure for driving the IC in flip-chip design (ie the active side of the IC is directed downwards, where the conductor structure is located), characterized in that the fixation of the IC with an organic resin, which contains highly conductive particles with an irregular structure. 2. Verfahren zur Kontaktierung eines IC gemäß Anspruch 1, dadurch gekennzeichnet, daß die leitenden, unregelmäßig geformten Partikel aus mit Graphit belegten Keramikteilchen bestehen.2. A method of contacting an IC according to claim 1, characterized characterized in that the conductive, irregularly shaped Particles consist of ceramic particles coated with graphite. 3. Verfahren zur Kontaktierung eines IC gemäß Anspruch 2, dadurch gekennzeichnet, daß die unregelmäßig geformten Partikel aus mit Graphit belegten Kristallen geeigneter Korngröße bestehen.3. A method of contacting an IC according to claim 2, characterized characterized in that the irregularly shaped particles with graphite-coated crystals of a suitable grain size. 4. Verfahren zur Kontaktierung eines IC gemäß Anspruch 3, dadurch gekennzeichnet, daß die unregelmäßig geformten Teilchen aus mit pyrolytischem Kohlenstoff belegten Keramik- oder Quarzteilchen bestehen.4. A method of contacting an IC according to claim 3, characterized characterized in that the irregularly shaped particles ceramic or coated with pyrolytic carbon Quartz particles exist. 5. Verfahren zur Kontaktierung eines IC gemäß Anspruch 1, dadurch gekennzeichnet, daß die leitenden Partikel aus Keramik oder Kristallen mit einer Metallschicht belegt sind.5. A method for contacting an IC according to claim 1, characterized characterized in that the conductive particles made of ceramic or Crystals are covered with a metal layer. 6. Verfahren zur Kontaktierung eines IC gemäß Anspruch 1 bis 5, dadurch gekennzeichnet, daß die Korngröße der leitenden Partikel zwischen 3 und 50 µm beträgt.6. A method for contacting an IC according to claim 1 to 5, characterized in that the grain size of the conductive Particles between 3 and 50 microns.
DE4138779A 1991-11-26 1991-11-26 Contacting integrated circuit on flexible circuit board, glass or ceramic substrate - fixing IC using organic resin which contains highly conductive particles with irregular structure Withdrawn DE4138779A1 (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4424831A1 (en) * 1994-07-14 1996-01-18 Bosch Gmbh Robert Process for producing an electrically conductive connection
EP0756323A2 (en) * 1995-07-28 1997-01-29 OPTREX EUROPE GmbH Substrate having an electrical conductor for an electronic component
DE19636813C1 (en) * 1996-09-11 1998-01-29 Bosch Gmbh Robert Method of mounting piezoelectric elements on metal surface e.g. in sensor systems
WO1998021781A1 (en) * 1996-11-11 1998-05-22 Optrex Europe Gmbh Fluid with multiple electroconductive surface particles
WO1999008498A1 (en) * 1997-08-08 1999-02-18 Pac Tech - Packaging Technologies Gmbh Contact arrangement linking two substrates and method for the production of said contact arrangement
DE19860716C1 (en) * 1998-12-23 2000-09-28 Siemens Ag Conductive adhesive connection arrangement for electronic components on circuit board
DE10112433A1 (en) * 2001-03-15 2002-10-02 Bosch Gmbh Robert Arrangement for measuring properties, e.g. viscosity of liquid, comprises piezoelectric sensor which is immersed in liquid and is electrically connected to exciter and analysis unit
EP1289013A1 (en) * 2001-08-15 2003-03-05 Datamars SA A method for applying a semiconductor chip to a substrate and an assembly obtained thereby
WO2003103861A2 (en) * 2002-06-05 2003-12-18 Matsushita Electric Industrial Co., Ltd. Low cost material recycling apparatus using laser stripping of coatings such as paint and glue

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4424831A1 (en) * 1994-07-14 1996-01-18 Bosch Gmbh Robert Process for producing an electrically conductive connection
DE4424831C2 (en) * 1994-07-14 1999-04-22 Bosch Gmbh Robert Process for producing an electrically conductive connection
EP0756323A2 (en) * 1995-07-28 1997-01-29 OPTREX EUROPE GmbH Substrate having an electrical conductor for an electronic component
EP0756323A3 (en) * 1995-07-28 1999-05-06 OPTREX EUROPE GmbH Substrate having an electrical conductor for an electronic component
DE19636813C1 (en) * 1996-09-11 1998-01-29 Bosch Gmbh Robert Method of mounting piezoelectric elements on metal surface e.g. in sensor systems
WO1998021781A1 (en) * 1996-11-11 1998-05-22 Optrex Europe Gmbh Fluid with multiple electroconductive surface particles
WO1999008498A1 (en) * 1997-08-08 1999-02-18 Pac Tech - Packaging Technologies Gmbh Contact arrangement linking two substrates and method for the production of said contact arrangement
DE19860716C1 (en) * 1998-12-23 2000-09-28 Siemens Ag Conductive adhesive connection arrangement for electronic components on circuit board
DE10112433A1 (en) * 2001-03-15 2002-10-02 Bosch Gmbh Robert Arrangement for measuring properties, e.g. viscosity of liquid, comprises piezoelectric sensor which is immersed in liquid and is electrically connected to exciter and analysis unit
EP1289013A1 (en) * 2001-08-15 2003-03-05 Datamars SA A method for applying a semiconductor chip to a substrate and an assembly obtained thereby
WO2003103861A2 (en) * 2002-06-05 2003-12-18 Matsushita Electric Industrial Co., Ltd. Low cost material recycling apparatus using laser stripping of coatings such as paint and glue
WO2003103861A3 (en) * 2002-06-05 2004-02-26 Matsushita Electric Ind Co Ltd Material recycling apparatus using laser stripping of coatings

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