DE4132920A1 - Circuit for low-noise amplitude HF oscillator - has bipolar transistor with high boundary frequency, operated in base circuit at low currents - Google Patents

Circuit for low-noise amplitude HF oscillator - has bipolar transistor with high boundary frequency, operated in base circuit at low currents

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Publication number
DE4132920A1
DE4132920A1 DE4132920A DE4132920A DE4132920A1 DE 4132920 A1 DE4132920 A1 DE 4132920A1 DE 4132920 A DE4132920 A DE 4132920A DE 4132920 A DE4132920 A DE 4132920A DE 4132920 A1 DE4132920 A1 DE 4132920A1
Authority
DE
Germany
Prior art keywords
oscillator
low
circuit
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE4132920A
Other languages
German (de)
Inventor
Werner Metzger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Funkwerk Koepenick I A GmbH
Original Assignee
Funkwerk Koepenick I A GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Funkwerk Koepenick I A GmbH filed Critical Funkwerk Koepenick I A GmbH
Priority to DE4132920A priority Critical patent/DE4132920A1/en
Publication of DE4132920A1 publication Critical patent/DE4132920A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L5/00—Automatic control of voltage, current, or power
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0034—Circuit elements of oscillators including a buffer amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0066—Amplitude or AM detection

Abstract

The HF oscillator circuit contains a low-noise bipolar, oscillator transistor (1) with high boundary frequency, operated in base circuit at very low currents. An oscillation circuit of a coil (L1), an equalising capacitor (C4) and capacitors, (C2,3) are coupled to the collector of a low capacitance (C1). The LF voltage, decoupled from the oscillation circuit, is amplified in a separating amplifier consisting of a transistor (T2), a base voltage divider (R2,3), an emitter resistor (R4), a collector transformer (L3) and an emitter blocking capacitor (C13). After rectifying by diodes (D1,2), it delivers a base current (IB) for a transistor (T3), parallel to resistor (R9) of the base voltage divider (R8,R9) of the oscillator transistor. USE/ADVANTAGE - For low-noise, amplitude controlled HF oscillator, with wide band transistors.

Description

Die Erfindung bezieht sich auf eine Schaltungsanordnung für einen rauscharmen amplitudengeregelten HF-Oszillator.The invention relates to a circuit arrangement for a low noise, amplitude controlled RF oscillator.

Die vorgeschlagene Lösung findet Anwendung in der Frequenzauf­ bereitung für Sender und Empfänger der Nachrichtentechnik, Gene­ ratoren der Meßtechnik und Steuerstufen für Sender.The proposed solution is used in frequency preparation for transmitters and receivers of communications engineering, genes rators of measurement technology and control stages for transmitters.

Das Phasenrauschen eines HF-Oszillators hängt bekannterweise von der Güte des Schwingkreises und von den Rauscheigenschaften der verwendeten Bauelemente ab. Bipolare Transistoren mit hoher Grenzfrequenz (5 GHz) und niedrigem Rauschfaktor werden für Breitbandverstärker von verschiedenen Firmen angeboten. Diese Transistoren haben hohe Eingangs- und Ausgangsleitwerte. Verwendet man diese Transistoren in üblichen Oszillatorschaltun­ gen mit Amplitudenbegrenzung, wird der Schwingkreis zu stark be­ dämpft. Rauscharme Oszillatoren lassen sich in üblicher Weise damit nicht aufbauen.The phase noise of an RF oscillator is known to depend on the quality of the resonant circuit and the noise characteristics of the components used. High bipolar transistors Cutoff frequency (5 GHz) and low noise factor are used for Broadband amplifiers offered by different companies. These Transistors have high input and output conductivities. These transistors are used in conventional oscillator circuits If the amplitude is limited, the resonant circuit will be overloaded too much dampens. Low noise oscillators can be used in the usual way don't build up with it.

Der vorliegenden Erfindung liegt die Aufgabe zugrunde, mit diesen rauscharmen Breitbandtransistoren eine Schaltungsanordnung für einen rauscharmen HF-Oszillator zu finden. Die gestellte Aufgabe wird erfindungsgemäß dadurch gelöst, daß, wenn man diese Breit­ bandtransistoren bei niedrigen Strömen betreibt, sich die Werte fürThe present invention has for its object with these low noise broadband transistors a circuit arrangement for to find a low-noise RF oscillator. The task at hand is solved according to the invention in that if you have this wide operates band transistors at low currents, the values For

Y₁₁ (Kurzschlußeingangsleitwert)
Y₂₂ (Kurzschlußübertragungsleitwert)
Y₂₁ (Kurzschlußübertragungsleitwert/Steilheit)Y₁₁ (short-circuit input conductance)
Y₂₂ (short-circuit transfer conductance)
Y₂₁ (short-circuit transmission conductance / slope)

sehr stark verkleinern.zoom out very much.

Somit wird der Schwingkreis wenig bedämpft. Stellt man jedoch einen Arbeitspunkt bei einem niedrigen Strom ein, ist das Schwingverhalten stark von Temperatur, Last und Frequenz abhängig, die Schwingung kann aussetzen. Um ein sicheres An­ schwingen des Oszillators zu erreichen und um den Kollektorstrom möglichst niedrig zu halten, wird eine Amplitudenregelschaltung benutzt.The resonant circuit is thus damped little. However, one poses an operating point at a low current is that Vibration behavior strongly dependent on temperature, load and frequency dependent, the vibration can stop. To be safe swinging to reach the oscillator and around the collector current An amplitude control circuit is used to keep it as low as possible used.

Ein Ausführungsbeispiel der Erfindung ist in der Zeichnung darge­ stellt und wird im folgenden näher beschrieben.An embodiment of the invention is shown in the drawing represents and is described in more detail below.

Fig. 1 Die erfindungsgemäße Oszillatorschaltung. Fig. 1 The oscillator circuit according to the invention.

Der Oszillatortransistor T1 wird in Basisschaltung betrieben. Durch den Kondensator C5 wird die Basis für die Oszillatorfre­ quenz auf Masse gelegt. Im Kollektor befindet sich als Arbeits­ widerstand eine Drossel L2. Der Schwingkreis, bestehend aus der Spule L1, dem Abgleichkondensator C4 und den Kondensatoren C2 und C3 wird über den Kondensator C1 lose an den Kollektor des Transistors T1 angekoppelt. Die Rückkoppelung erfolgt vom Emit­ terwiderstand R5 auf den kapazitiven Spannungsteiler C2, C3. Die Rückkoppelung kann auch auf die Spule L1 erfolgen. Mit dem Abgleichkondensator C4 wird die gewünschte Frequenz eingestellt. Werden parallel zur Spule L1 eine oder mehrere Kapazitätsdioden geschaltet, erhält man einen spannungsgesteuerten Oszillator VCO, wie er im Anwendungsgebiet verwendet wird. Die Betriebsspannung für den Oszillatortransistor T1 wird über den Widerstand R 7 zugeführt und durch den Kondensator C6 abgeblockt. Mit dem Basisspannungsteiler R8, R9 und R6 als Siebwiderstand wird der Arbeitspunkt für den Oszillatortransistor T1 zum Ausschwingen des Oszillators festgelegt. Über den Widerstand R1 und dem Kon­ densator C9 wird ein kleiner Teil der NF-Energie aus dem Schwingkreis ausgekoppelt und dem Trennverstärker zugeführt. Er besteht aus dem Transistor T2, dem Basisspannungsteiler R2, R3, Emitterwiderstand R4, Emitterabblockkondensator C1, und dem im Kollektor liegenden Übertrager L3. Zur besseren Anpassung wird die Kollektorspannung heruntertransformiert und über den Kondensator C10 dem Ausgang zugeführt. Direkt vom Kollektor wird über den Kondensator C11 die Spannung den Dioden D1, D2 zugeführt, die als Spannungsverdoppler geschaltet sind. Die gleichgerichtete HF-Spannung wird über die Siebkette C12, R10 und C8 der Basis des Transistors T3 zugeführt, so daß ein Ba­ sisstrom IB fließt. Dadurch wird der Transistor T3, der parallel zum Widerstand R9 geschaltet ist, geöffnet, und der Basisstrom vom Oszillatortransistor T1 wird verkleinert.The oscillator transistor T1 is operated in the basic circuit. The base for the oscillator frequency is laid on ground by the capacitor C5. In the collector there is a choke L2 as working resistance. The resonant circuit, consisting of the coil L1, the matching capacitor C4 and the capacitors C2 and C3, is loosely coupled to the collector of the transistor T1 via the capacitor C1. The feedback takes place from the emitter resistor R5 to the capacitive voltage divider C2, C3. The feedback can also take place on the coil L1. The desired frequency is set with the adjustment capacitor C4. If one or more capacitance diodes are connected in parallel with the coil L1, a voltage-controlled oscillator VCO is obtained, as is used in the field of application. The operating voltage for the oscillator transistor T1 is supplied via the resistor R 7 and blocked by the capacitor C6. With the base voltage divider R8, R9 and R6 as a filter resistor, the operating point for the oscillator transistor T1 for swinging out of the oscillator is determined. A small part of the NF energy is decoupled from the resonant circuit via the resistor R1 and the capacitor C9 and fed to the isolating amplifier. It consists of transistor T2, base voltage divider R2, R3, emitter resistor R4, emitter blocking capacitor C1, and transformer L3 located in the collector. For better adaptation, the collector voltage is transformed down and fed to the output via capacitor C10. Directly from the collector, the voltage is fed to the diodes D1, D2 via the capacitor C11, which are connected as voltage doublers. The rectified RF voltage is supplied via the sieve chain C12, R10 and C8 to the base of the transistor T3, so that a base current I B flows. This opens transistor T3, which is connected in parallel with resistor R9, and the base current from oscillator transistor T1 is reduced.

Der Kondensator C7 bestimmt die Regelzeit und blockt das NF-Rauschen ab.The capacitor C7 determines the control time and blocks it LF noise off.

In diesem Regelkreis fungieren die Gleichrichterdioden D1 und D2 als Referenzelement und der Oszillatortransistor T1 mit seiner stromabhängigen Steilheit als Regelglied. Gleichzeitig werden durch den niedrigen Strom Y11 und Y22 verkleinert, das heißt, Eingangs- und Ausgangswiderstand des Oszillatortransi­ stors T1 optimal vergrößert. Die Ausgangsamplitude ist frequenz­ unabhängig und weitgehend unabhängig von Laständerungen und Tem­ peraturschwankungen.In this control circuit, the rectifier diodes D1 and D2 act as a reference element and the oscillator transistor T1 with its current-dependent slope as a control element. At the same time are reduced by the low current Y 11 and Y 22 , that is, input and output resistance of the oscillator transistor T1 optimally increased. The output amplitude is independent of frequency and largely independent of load changes and temperature fluctuations.

Claims (1)

Schaltungsanordnung für einen rauscharmen amplitudengeregel­ ten HF-Oszillator, dadurch gekennzeichnet, daß als Oszillator­ transistor (1) ein rauscharmer bipolarer Transistor mit hoher Grenzfrequenz verwendet wird, der bei sehr niedrigen Strömen in Basisschaltung betrieben wird, daß ein Schwingkreis, be­ stehend aus einer Spule (L1), einem Abgleichkondensator (C4) und Kondensatoren (C2; C3), über eine kleine Kapazität (C1) an den Kollektor angekoppelt ist, daß die NF-Spannung aus dem Schwingkreis ausgekoppelt, in einem Trennverstärker, bestehend aus einem Transistor (T2), einem Basisspannungs­ teiler (R2; R3) einem Emitterwiderstand (R4), einem Emitterabblockkondensator (C13) und einem im Kollektor lie­ genden Übertrager (L3), verstärkt und durch Dioden (D1; D2) gleichgerichtet den Basisstrom (IB) für einen Transistor (T3) liefert, der parallel zu einem Widerstand (R9) des Basisspan­ nungsteilers (R8; R9) des Oszillatortransistors (1) geschal­ tet ist.Circuit arrangement for a low-noise, amplitude-controlled HF oscillator, characterized in that a low-noise bipolar transistor with a high cut-off frequency is used as the oscillator transistor ( 1 ), which is operated at very low currents in the basic circuit, that an oscillating circuit, consisting of a coil ( L1), a trimming capacitor (C4) and capacitors (C2; C3), is coupled to the collector via a small capacitance (C1) so that the LF voltage is decoupled from the resonant circuit, in a signal conditioner consisting of a transistor (T2) , a base voltage divider (R2; R3) an emitter resistor (R4), an emitter blocking capacitor (C13) and a transformer lying in the collector (L3), amplified and rectified by diodes (D1; D2) the base current (I B ) for a transistor (T3) supplies, which is switched in parallel to a resistor (R9) of the base voltage divider (R8; R9) of the oscillator transistor ( 1 ).
DE4132920A 1991-10-04 1991-10-04 Circuit for low-noise amplitude HF oscillator - has bipolar transistor with high boundary frequency, operated in base circuit at low currents Withdrawn DE4132920A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE4132920A DE4132920A1 (en) 1991-10-04 1991-10-04 Circuit for low-noise amplitude HF oscillator - has bipolar transistor with high boundary frequency, operated in base circuit at low currents

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4132920A DE4132920A1 (en) 1991-10-04 1991-10-04 Circuit for low-noise amplitude HF oscillator - has bipolar transistor with high boundary frequency, operated in base circuit at low currents

Publications (1)

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DE4132920A1 true DE4132920A1 (en) 1993-04-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19828622B4 (en) * 1997-09-30 2006-05-04 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Broadband oscillator with automatic bias control

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2051135A1 (en) * 1970-10-17 1972-04-20 Itt Ind Gmbh Deutsche Transistorized sine wave oscillator
DE2003656B2 (en) * 1970-01-28 1973-10-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt
DE2044732C2 (en) * 1970-09-10 1974-04-18 Robert Bosch Elektronik Gmbh, 1000 Berlin U. 7000 Stuttgart Amplitude-controlled high-frequency oscillator
DE2247160A1 (en) * 1972-09-26 1974-05-16 Siemens Ag AMPLITUDE REGULATED GENERATOR. ADDITIONAL TO 1766840
DE2039695C3 (en) * 1970-08-10 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Amplitude-controlled transistor oscillator
DE2632645B2 (en) * 1976-07-20 1980-05-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regulated transistor oscillator

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2003656B2 (en) * 1970-01-28 1973-10-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt
DE2039695C3 (en) * 1970-08-10 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Amplitude-controlled transistor oscillator
DE2044732C2 (en) * 1970-09-10 1974-04-18 Robert Bosch Elektronik Gmbh, 1000 Berlin U. 7000 Stuttgart Amplitude-controlled high-frequency oscillator
DE2051135A1 (en) * 1970-10-17 1972-04-20 Itt Ind Gmbh Deutsche Transistorized sine wave oscillator
DE2247160A1 (en) * 1972-09-26 1974-05-16 Siemens Ag AMPLITUDE REGULATED GENERATOR. ADDITIONAL TO 1766840
DE2632645B2 (en) * 1976-07-20 1980-05-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regulated transistor oscillator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19828622B4 (en) * 1997-09-30 2006-05-04 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Broadband oscillator with automatic bias control

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