DE4101042C1 - Contact and encapsulation of micro-circuits using solder laser - and laser transparent contact film segments with conductor sheets of solderable material, geometrically associated with solder protuberances - Google Patents

Contact and encapsulation of micro-circuits using solder laser - and laser transparent contact film segments with conductor sheets of solderable material, geometrically associated with solder protuberances

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Publication number
DE4101042C1
DE4101042C1 DE4101042A DE4101042A DE4101042C1 DE 4101042 C1 DE4101042 C1 DE 4101042C1 DE 4101042 A DE4101042 A DE 4101042A DE 4101042 A DE4101042 A DE 4101042A DE 4101042 C1 DE4101042 C1 DE 4101042C1
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Germany
Prior art keywords
laser
contact
solder
soldering
cutouts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4101042A
Other languages
German (de)
Inventor
Werner Dipl.-Chem. Dr. 7900 Ulm De Moeller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Conti Temic Microelectronic GmbH
Original Assignee
Messerschmitt Bolkow Blohm AG
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Filing date
Publication date
Application filed by Messerschmitt Bolkow Blohm AG filed Critical Messerschmitt Bolkow Blohm AG
Priority to DE4101042A priority Critical patent/DE4101042C1/en
Application granted granted Critical
Publication of DE4101042C1 publication Critical patent/DE4101042C1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

Microcircuits, having high numbers of connections and connection densities, are contacted and encapsulated using solder laser. The improvement is that a high-polar microelectronic element (integrated circuit) is provided with solder protuberances of different shape and height, using the solder laser, and is testably fixed on a substrate, as a film which can be coiled and un-coiled, and which is provided with stepped substrate inlets (I), and is contacted and encapsulated with inlets (I0, via laser-transparent contact-film segments e.g. of polyimide copper (II). Segment (II) are provided with conductor sheets of solderable material, which are associated geometrically with the solder protuberances and conductor sheets are correlated on the steps of inlets (I). ADVANTAGE - Use of circuits with high connection- and packing densities is enabled.

Description

Die Erfindung bezieht sich auf ein Verfahren zur Kontaktierung und Verkap­ selung von Mikroschaltungen gemäß dem Oberbegriff des Anspruchs 1.The invention relates to a method for contacting and capping selection of microcircuits according to the preamble of claim 1.

Solche Verfahren sind in den verschiedensten Ausführungsformen bekannt ge­ worden. So sind beispielsweise durch die Anmelderin in den Druckschriften DE 34 42 131 A1 und DE 37 25 269 A1 Verfahren zum Einkapseln von mikroelektroni­ schen Halbleiter- und Schichtschaltungen bekanntgeworden, wobei im einem Fall die auf einen Substrat befindlichen Halbleiterbauelemente mit einer weichen, siegelfähigen Kunststoffschicht übergossen, mit einer Kunst­ stoff-Metall-Verbundfolie abgedeckt und anschließend mit einer temperatur­ beständigen, harten Kunstharzvergußmasse verkapselt werden, während im zweiten Fall zur Verhinderung eines Eindiffundierens von Feuchte und kor­ rosiven Gasen vorgeschlagen wird, daß die mikroelektronische Schichtschal­ tung an den zu verkapselnden Stellen beim letzten Dielektrikumsdruck mit einem Isolierkranz bedruckt und in speziellen Maßnahmen aufgelötet wird.Such methods are known in various embodiments been. For example, by the applicant in the publications DE 34 42 131 A1 and DE 37 25 269 A1 Process for encapsulating microelectronics rule semiconductor and layer circuits become known, in one Case the semiconductor components located on a substrate with a covered with a soft, sealable plastic layer, with an art Fabric-metal composite film covered and then with a temperature resistant, hard synthetic resin potting compound are encapsulated, while in second case to prevent diffusion of moisture and cor it is proposed that the microelectronic layered scarf at the points to be encapsulated during the last dielectric pressure printed on an insulating ring and soldered in special measures.

Ein Verfahren nach dem Oberbegriff des Anspruchs 1 ist aus der Druck­ schrift "Feinwerktechnik & Meßtechnik", 1989, Bd. 97, H. 11, S. 507-508 be­ kannt.A method according to the preamble of claim 1 is from the print font "Feinwerktechnik & Meßtechnik", 1989, Vol. 97, H. 11, pp. 507-508 be knows.

Aus der Druckschrift EP 01 13 895 A1 ist es bekannt, durch eine licht­ durchlässige Trägerfolie einander gegenüberliegende Verdrahtungen durch einen Laserstrahl miteinander zu verlöten.From the document EP 01 13 895 A1 it is known by a light permeable carrier foil through opposing wiring to solder a laser beam together.

Aus JP 1-23 543 A. in "Patents Abstracts of Japan", E-757, 1989, Vol. 13, Nr. 201 ist es bekannt, Löthöcker eines in einer Vertiefung eines Sub­ strats angeordneten Bauelements durch Laser-Löten mit den Elektroden einer Leiterplatte zu verbinden. Alle Ausführungsformen des Standes der Technik sind für das Aufbringen der Löthöcker mit einem rechnergesteuerten Löt­ drahtvorschub nur für größere Durchmesserdimensionen verwendbar.From JP 1-23 543 A. in "Patents Abstracts of Japan", E-757, 1989, Vol. 13, No. 201 it is known to solder bumps one in a recess of a sub Strats arranged component by laser soldering with the electrodes of one Connect circuit board. All embodiments of the prior art are for the application of the solder bumps with a computer-controlled solder wire feeder can only be used for larger diameter dimensions.

Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren der eingangs ge­ nannten Art zu schaffen, das berührungslos eine gleichzeitige Kontaktierung und Verkapselung einer hochpoligen Mikroelektronikschaltung gewährleistet und auch für Löthöcker mit einem Durchmesser von weniger als 0,1 mm einsetzbar ist, und außerdem den Einsatz von Schaltun­ gen hoher Anschluß- und Packungsdichte erlaubt.The invention has for its object a method of ge called kind to create the contactless a simultaneous Contacting and encapsulation of a multi-pin microelectronic circuit guaranteed and also for soldering bumps with a diameter of less than 0.1 mm can be used, and also the use of Schaltun allowed for high connection and packing density.

Diese Aufgabe wird durch die im Anspruch 1 aufgezeigten Maßnahmen ge­ löst. In den Unteransprüchen sind Ausgestaltungen und Weiterbildungen angegeben und in der nachfolgenden Beschreibung ist ein Ausführungsbei­ spiel erläutert und in den Figuren der Zeichnung skizziert. Es zeigen:This object is achieved by the measures outlined in claim 1 solves. Refinements and developments are in the subclaims and in the description below is an embodiment game explained and sketched in the figures of the drawing. Show it:

Fig. 1 ein Schemabild in einer Seitenansicht eines Ausführungsbeispiels für eine Mehrlagenverkapselung und deren Verbindung, Fig. 1 is a schematic picture in side view of an embodiment of a Mehrlagenverkapselung and their connection,

Fig. 2 eine perspektivische Ansicht in Explosionsdarstellung des Aus­ führungsbeispiels gemäß Fig. 1, Fig. 2 is a perspective exploded view of the off guidance example according to Fig. 1,

Fig. 3 eine Draufsicht auf die Mikroschaltung gemäß Fig. 1 (beispiels­ weise IC) in der fixierten Lage auf einem 8, 16, 32 oder 64 mm Film F, Fig. 3 is a plan view of the micro-circuit according to Fig. 1 (Example as IC) mm in the fixed location on an 8, 16, 32 or 64 film F,

Fig. 4 einen Schnitt entlang der Linie A-A des Ausführungsbeispiels ge­ mäß Fig. 1 in verschweißtem und verkapseltem Zustand. Fig. 4 shows a section along the line AA of the embodiment according to FIG. 1 in the welded and encapsulated state.

An dem in den Fig. 1 und 2 veranschaulichten Ausführungsbeispiel soll das erfindungsgemäße Verfahren zur gleichzeitigen Kontaktierung und Ver­ kapselung eines IC′s in einem Arbeitsgang erläutert werden. Der IC 10 wird mit sogenannten Löthöckern 11a, 11b, . . . 11n in unterschiedlicher feldartiger Anordnung und unterschiedlicher Höhe mittels eines Lötlasers versehen, wobei die IC′s 10 auf einen Kontaktfilmset F von 8, 16, 32 oder 64 mm Breite auf- und abspulbar fixiert sind. Den un­ terschiedlich dimensionierten und in Reihen angeordneten Löthöckern 11a bis 11n sind nun Kontaktfolienausschnitte 12a, 12b, . . . 12n zugeordnet, die sich durch eine IR-Lasertransparenz, einen geringen Ausdehnungskoef­ fizienten, hohe Flexibilität und eine wärmestabile Verkleb- und Verlöt­ barkeit auszeichnen. Diese Kontaktfolien 12a bis 12n sind mit Leiterbah­ nen 14a, 14b, . . . 14n aus verlötbarem Material, wie beispielsweise Cu, Ag-Pd usw. versehen. Sie sind in ihrer geometrischen Form - die aus den Figuren der Zeichnung deutlich erkennbar ist - einerseits den Löthöckern und andererseits den Substratanschlüssen 13a, 13b, . . . 13n entsprechend angepaßt. Die Kontaktfolien selbst können aus Polyimid/Cu-Folien oder aber auch aus vor- oder ausgesinterten "Green-sheet-Glaskeramikfolien" mit Ag-Pd-Leiterbahnen gebildet sein.On the embodiment illustrated in FIGS . 1 and 2, the inventive method for simultaneous contacting and encapsulation of an IC's will be explained in one operation. The IC 10 is with so-called solder bumps 11 a, 11 b,. . . 11 n in a different field-like arrangement and at different heights by means of a soldering laser, the IC's 10 being fixed on a contact film set F of 8, 16, 32 or 64 mm in width so that they can be unwound and unwound. The un differently dimensioned and arranged in rows solder bumps 11 a to 11 n are now contact foil cutouts 12 a, 12 b,. . . 12 n assigned, which are characterized by IR laser transparency, a low coefficient of expansion, high flexibility and a heat-stable adhesive and solderability. These contact foils 12 a to 12 n are with conductor tracks 14 a, 14 b,. . . 14 n made of solderable material, such as Cu, Ag-Pd etc. provided. They are in their geometric shape - which can be clearly seen from the figures of the drawing - on the one hand the solder bumps and on the other hand the substrate connections 13 a, 13 b,. . . 13 n adjusted accordingly. The contact foils themselves can be formed from polyimide / Cu foils or else from pre-sintered or sintered "green sheet glass ceramic foils" with Ag-Pd conductor tracks.

Die flächenmäßige Ausbildung jeder Kontaktfolie ist so gehalten, daß sie der ihr zugeordneten Löthöckerreihe entsprechend zugeschnitten ist. Über ein Positioniersystem, das ein X/Y-Tisch, ein Roboter mit Visionssystem usw. sein kann, werden die verschiedenen Kontaktfolien nacheinander von außen nach innen den Löthöckerreihen zugeordnet und mit den Lötlaser die Kontakte 11a bis 11n verlötet und die Kontaktfolien 12a bis 12n unter­ einander verklebt oder verschweißt. Es wird also - gemäß den Fig. 1 und 2 - zuerst die Kontaktfolie 12n mit den Kontaktreihen 11n und den Lei­ terbahnen 14n sowohl der Kontaktfolie 12n als auch des Substrat-Inlets 13n verschweißt. Dann erfolgt die Positionierung der Kontaktfolie 12b, die entsprechend der Löthöckerreihe 11b zugeschnitten ist und der vorbe­ schriebene Lötvorgang etc. wiederholt sich.The areal design of each contact foil is such that it is cut according to the row of solder bumps assigned to it. A positioning system that may be a X / Y table, a robot vision system, etc., the various contact sheets are assigned sequentially from outside to inside the Löthöckerreihen and a brazed to the Lötlaser the contacts 11 to 11 n and the contact films 12 a glued or welded to each other up to 12 n. It is - according to FIGS. 1 and 2 - first the contact foil 12 n with the contact rows 11 n and the conductor tracks 14 n both the contact foil 12 n and the substrate inlet 13 n welded. Then there is the positioning of the contact foil 12 b, which is cut according to the row of solder bumps 11 b and the previously described soldering process etc. is repeated.

Das filmförmige Trägersubstrat F wird entsprechend den vorbeschriebenen Kontaktfolien 12a bis 12n und dem mikroelektronischen Schaltelement 10 stufenförmig ausgebildet. Die durch die Substrat-Inlets 13a bis 13n ent­ standenen "Stufen" können durch mehrlagig angeordnete Polyimid-Kupfer­ leiter-Lagenschaltungen, Leiterplatten oder Keramik-Multilayer aus Kera­ mik-Greensheets mit aufgesinterten Leiterbahnen aus Ag-Pd oder ähnlichem gebildet werden. Löthöcker 11, Kontaktfolien 12 Leiterbahnen 14 und Sub­ strat-Inlets 13 werden nun mit dem Laser verlötet und verklebt.The film-shaped carrier substrate F is formed in a step-like manner in accordance with the contact foils 12 a to 12 n described above and the microelectronic switching element 10 . The resulting through the substrate inlets 13 a to 13 n "stages" can be formed by multilayer polyimide copper conductor layer circuits, circuit boards or ceramic multilayers made of ceramic greensheets with sintered conductor tracks made of Ag-Pd or the like. Solder bumps 11 , contact foils 12 conductor tracks 14 and sub strat inlets 13 are now soldered and glued with the laser.

Die Löthöcker können vorteilhaft anstelle aus Au, Cu oder Pb-Sn auch aus Pd galvanisch oder - bei kleinen Dimensionen - stromlos hergestellt wer­ den. Palladium läßt sich gegenüber Au mit dem Laser wesentlich besser unter Verwendung von Sn-Loten verlöten, da die Absorption bei der Wel­ lenlänge λ=1064 nm bei 40% statt bei 5% liegt. The solder bumps can also advantageously be made of Au, Cu or Pb-Sn Pd galvanically or - in the case of small dimensions - without current the. Palladium is much better compared to Au with the laser using Sn solders, since the absorption at Wel lenlength λ = 1064 nm is 40% instead of 5%.  

Der Laser ist vorzugsweise ein temperatur-, positions- oder rechnerge­ steuerter cw:YAG-Laser, der weitgehend Kunststoff-Folien oder GFK-Epo­ xy-, Al2O3- und Si-Substrate durchstrahlt und temperaturgesteuerte Mikroverlötungen punktuell (< 50 m) sowie durch Scanning des Laser­ strahls Folienverschweißungen und Folienverklebungen durchführt.The laser is preferably a temperature, position or computer controlled cw: YAG laser, which largely shines through plastic foils or GRP epoxy, Al 2 O 3 and Si substrates and selectively controls temperature-controlled micro soldering (<50 m) and by scanning the laser beam, foil welding and foil bonding is carried out.

Claims (6)

1. Verfahren zur Kontaktierung und Verkapselung von Mikroschaltungen mit hohen Anschlußzahlen und Anschlußdichten mittels Lötlaser, dadurch gekennzeichnet, daß ein hochpoliges mikroelektronisches Bauelement (10) (integrierte Schaltung) mittels des Lötlasers mit in Form und Höhe un­ terschiedlich dimensionierten Löthöckern (11a, 11b, . . . 11n) versehen und auf einem auf- und abspulbaren filmförmigen, mit abgestuften Sub­ strat-Inlets (13a, 13b . . . 13n) versehen Substrat prüfbar fixiert wird und über lasertransparente Kontakt-Folienausschnitte (12a, 12b, . . . 12n) mit den abgestuften Substrat-Inlets (13a, 13b, . . . 13n) kontaktiert und verkap­ selt wird, wobei die Kontakt-Folienausschnitte (12a-12n) mit Leiter­ bahnen (14a, 14b, . . . 14n) aus verlötbarem Material versehen sind, die geo­ metrisch den Löthöckern (11a-11n) einerseits und Leiterbahnen auf den Stufen der Substrat-Inlets (13a-13n) andererseits zugeordnet werden.1. A method for contacting and encapsulating microcircuits with high numbers of connections and connection densities by means of a soldering laser, characterized in that a multi-pole microelectronic component ( 10 ) (integrated circuit) by means of the soldering laser with unevenly dimensioned soldering bumps in shape and height ( 11 a, 11 b ... 11 n) and is testably fixed on a film-shaped substrate that can be wound and unwound and provided with stepped substrate strands ( 13 a, 13 b... 13 n) and via laser-transparent contact film cutouts ( 12 a, 12 b,... 12 n) with the stepped substrate inlets ( 13 a, 13 b,... 13 n) is contacted and encapsulated, the contact film cutouts ( 12 a- 12 n) with conductors ( 14 a, 14 b,... 14 n) are provided from solderable material, which are assigned to the soldering bumps ( 11 a - 11 n) on the one hand and conductor tracks on the steps of the substrate inlets ( 13 a - 13 n) on the other hand . 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Löt­ höcker (11a-11n) aus AuSn-, SnPbAgCu- oder anderen Au-Loten in unter­ schiedlicher, feldartiger Anordnung auf dem Bauelement (10) aufgebracht werden.2. The method according to claim 1, characterized in that the solder bumps ( 11 a- 11 n) made of AuSn, SnPbAgCu or other Au solders are applied in different, field-like arrangement on the component ( 10 ). 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Kontaktfolienausschnitte (12a-12n) aus einem IR-Laser-transparen­ ten, wärmestabilen und verkleb- oder verlötbaren flexiblen Material - wie Polyimid/Cu-Folien oder Greensheet-Keramikfolien - bestehen und die­ se Kontaktfolien mit Leiterbahnen aus verlötbarem Material - wie Cu, Ag-Pd - versehen sind, wobei jeder Löthöckerreihe ein Kontaktfolienaus­ schnitt (12a-12n) zugeordnet wird.3. The method according to claim 1 or 2, characterized in that the contact film cutouts ( 12 a- 12 n) from an IR laser-transparent, heat-stable and glued or solderable flexible material - such as polyimide / Cu films or greensheet ceramic films - exist and these contact foils with conductor tracks made of solderable material - such as Cu, Ag-Pd - are provided, with each row of solder bumps a contact foil cut ( 12 a- 12 n) is assigned. 4. Verfahren nach den Ansprüchen 1 bis 3, dadurch gekennzeichnet, daß die Kontaktfolienausschnitte (12a-12n) über ein Positioniersystem (x/y-Tisch, Roboter mit Visionssystem) nacheinander von außen nach innen den Reihen der Löthöcker (11a-11n) zugeordnet werden und mit dem Laser diese Kontakte mit den Leiterbahnen (14a-14n) der Kontaktfolienaus­ schnitte (12a-12n) verlötet, sowie letztere untereinander selbst ver­ klebt oder veschweißt werden.4. The method according to claims 1 to 3, characterized in that the contact foil cutouts ( 12 a- 12 n) via a positioning system (x / y table, robot with vision system) in succession from the outside inwards the rows of soldering bumps ( 11 a- 11 n) are assigned and these contacts are soldered to the conductor tracks ( 14 a - 14 n) of the contact foil cutouts ( 12 a - 12 n) with the laser, and the latter are glued or welded to one another themselves. 5. Verfahren nach den Ansprüchen 1 bis 4, dadurch gekennzeichnet, daß zur Mikroverlötung oder Verklebung ein temperatur-, positions- und rechnergesteuerter cw:YAG-Laser verwendet wird, der außerdem PI-, FR4-, Al2O3- und Si-Substrate durchstrahlen kann.5. The method according to claims 1 to 4, characterized in that a temperature, position and computer-controlled cw: YAG laser is used for micro soldering or bonding, which is also PI, FR4, Al 2 O 3 - and Si Can irradiate substrates. 6. Verfahren nach den Ansprüchen 1 bis 5, dadurch gekennzeichnet, daß die Mikroverlötung punktuell mit Dimensionen unter 50 µm durch Scannen des Laserstrahls durchgeführt wird.6. The method according to claims 1 to 5, characterized in that the micro soldering with dimensions under 50 microns through Scanning the laser beam is performed.
DE4101042A 1991-01-16 1991-01-16 Contact and encapsulation of micro-circuits using solder laser - and laser transparent contact film segments with conductor sheets of solderable material, geometrically associated with solder protuberances Expired - Lifetime DE4101042C1 (en)

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DE4316175A1 (en) * 1993-05-14 1994-11-17 Daimler Benz Ag Soldered connection and soldering method
EP0683513A1 (en) * 1994-04-26 1995-11-22 International Business Machines Corporation Electronic package with multilevel connections
WO1996024162A1 (en) * 1995-02-02 1996-08-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Chip housing and process for producing it
EP0898311A2 (en) * 1997-08-20 1999-02-24 Nec Corporation Surface mounting type semiconductor package mounted on a multilayer mounting substrate
FR2890235A1 (en) * 2005-08-30 2007-03-02 Commissariat Energie Atomique Hybridization method of electronic component e.g. x-ray or infrared radiation sensors, involves forming protrusions of larger size on pads of electronic component
CN110970396A (en) * 2018-09-28 2020-04-07 台湾积体电路制造股份有限公司 Semiconductor device and method of forming a semiconductor device
US11211318B2 (en) 2018-09-28 2021-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Bump layout for coplanarity improvement

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4316175A1 (en) * 1993-05-14 1994-11-17 Daimler Benz Ag Soldered connection and soldering method
EP0683513A1 (en) * 1994-04-26 1995-11-22 International Business Machines Corporation Electronic package with multilevel connections
WO1996024162A1 (en) * 1995-02-02 1996-08-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Chip housing and process for producing it
EP0898311A2 (en) * 1997-08-20 1999-02-24 Nec Corporation Surface mounting type semiconductor package mounted on a multilayer mounting substrate
EP0898311A3 (en) * 1997-08-20 2000-05-17 Nec Corporation Surface mounting type semiconductor package mounted on a multilayer mounting substrate
FR2890235A1 (en) * 2005-08-30 2007-03-02 Commissariat Energie Atomique Hybridization method of electronic component e.g. x-ray or infrared radiation sensors, involves forming protrusions of larger size on pads of electronic component
EP1764828A1 (en) * 2005-08-30 2007-03-21 Commissariat A L'energie Atomique Method for hybridizing two devices using solder balls of different size and device resulting therefrom
US7938311B2 (en) 2005-08-30 2011-05-10 Commissariat A L'energie Atomique Method for hybridization of two components by using different sized solder protrusions and a device that uses two components hybridized according to this method
CN110970396A (en) * 2018-09-28 2020-04-07 台湾积体电路制造股份有限公司 Semiconductor device and method of forming a semiconductor device
US11211318B2 (en) 2018-09-28 2021-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Bump layout for coplanarity improvement

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