DE4042440A1 - Diode-pumped solid laser - has sepd. nonlinear crystal bonded to piezoceramic vibrator and equipped with antireflection coating on face towards laser crystal similarly coated - Google Patents

Diode-pumped solid laser - has sepd. nonlinear crystal bonded to piezoceramic vibrator and equipped with antireflection coating on face towards laser crystal similarly coated

Info

Publication number
DE4042440A1
DE4042440A1 DE19904042440 DE4042440A DE4042440A1 DE 4042440 A1 DE4042440 A1 DE 4042440A1 DE 19904042440 DE19904042440 DE 19904042440 DE 4042440 A DE4042440 A DE 4042440A DE 4042440 A1 DE4042440 A1 DE 4042440A1
Authority
DE
Germany
Prior art keywords
laser
crystal
diode
resonator
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19904042440
Other languages
German (de)
Other versions
DE4042440C2 (en
Inventor
Stefan Heinemann
Axel Dipl Ing Mehnert
Peter Dr Peuser
Nikolaus Dipl Phys Schmitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Messerschmitt Bolkow Blohm AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Bolkow Blohm AG filed Critical Messerschmitt Bolkow Blohm AG
Priority to DE19904042440 priority Critical patent/DE4042440C2/en
Priority claimed from DE19904041131 external-priority patent/DE4041131A1/en
Publication of DE4042440A1 publication Critical patent/DE4042440A1/en
Application granted granted Critical
Publication of DE4042440C2 publication Critical patent/DE4042440C2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Lasers (AREA)

Abstract

A laser crystal (11) with a mirror coating (S1) on its input face, and a non linear crystal (12) likewise coated (S2) on its output face, are spaced apart within an ovarall length of less than 1 mm to guarantee a resonator mode. The nonlinear crystal (12) is assembled to a piezoceramic modulator (16) excited by a high-frequency generator (17). The facing crystal surfaces have coatings (S3) with antireflecting properties at the wavelengths of the fundamental and laser frequencies and of the pumping diode (14). ADVANTAGE - Extended tuning and modulation of fundamental and frequency-doubled or mixed wavelengths are possible.

Description

Die Erfindung bezieht sich auf einen von Laserdioden gepumpten Festkörper­ laser mit longitudinalem Einmodenbetrieb im sichtbaren Wellenlängenbereich gemäß dem Gattungsbegriff des Anspruchs 1.The invention relates to a solid body pumped by laser diodes laser with longitudinal single-mode operation in the visible wavelength range according to the preamble of claim 1.

Ein solcher Laser ist durch die DE-P 40 41 131.1-33 bekannt. Der hier offenbarte Festkörperlaser ist als Mikrokristall-Laser anzusprechen, welcher bei einer mechanisch einfachen Ausführung sowohl eine Frequenzver­ dopplung und Frequenzmischung, als auch eine Abstimmung und Modulation der Grundwellenlänge und zweiten Harmonischen bei effizientem "Singl Frequency Betrieb" gewährleistet.Such a laser is known from DE-P 40 41 131.1-33. This here disclosed solid-state laser can be addressed as a micro-crystal laser, which in a mechanically simple version has both a frequency ver doubling and frequency mixing, as well as tuning and modulating the Basic wavelength and second harmonic with efficient "Singl Frequency Operation "guaranteed.

Der vorliegenden Erfindung liegt die Aufgabe zugrunde, unter Beibehaltung der Eigenschaften des vorgenannten Mikrokristall-Lasers, einen solchen zu schaffen, mit dem eine erweiterte Abstimmung und Modulation der grund- und frequenzverdoppelten oder frequenzgemischten Wellenlänge ermöglicht wird.The present invention has for its object, while maintaining the properties of the aforementioned micro crystal laser create with which an advanced tuning and modulation of the basic and frequency-doubled or frequency-mixed wavelength is made possible.

Diese Aufgabe wird durch die im Patentanspruch aufgezeigten Maßnahmen gelöst. Nachfolgend ist ein Ausführungsbeispiel beschrieben und in der einzigen Figur der Zeichnung skizziert, die ein Schemabild eines halbmo­ nolithischen, abstimmbaren Mikrokristall-Lasers im sichtbaren Wellenlän­ genbereich veranschaulicht.This object is achieved by the measures indicated in the claim solved. An embodiment is described below and in the single figure of the drawing outlined, which is a schematic image of a semi mo nolithic, tunable micro-crystal laser in the visible wavelength area illustrated.

Das in der Figur skizzierte Ausführungsbeispiel zeigt einen Resonator des vorgenannten Festkörperlasers 10, der aus einem Laserkristall 11, der als einseitig einkoppelnder Spiegel S1 ausgebildet ist und einem nichtlinearen Kristall 12 gebildet ist, der einseitig als Auskoppelspiegel S2 ausgebil­ det ist, wobei die Kristalle 11 und 12 nach Schliff, Beschichtung und Montage die Ausbildung einer Resonatormode gewährleisten, wie dies in der vorgenannten Druckschrift bereits ausgeführt ist. Mit 14 ist die Pump­ licht-Laserdiode bezeichnet. The exemplary embodiment outlined in the figure shows a resonator of the aforementioned solid-state laser 10 , which is formed from a laser crystal 11 which is designed as a mirror S 1 coupling in on one side and a non-linear crystal 12 which is formed on one side as a coupling-out mirror S 2 , the crystals 11 and 12 after grinding, coating and assembly ensure the formation of a resonator mode, as has already been stated in the aforementioned publication. With 14 the pump light laser diode is designated.

Im vorliegenden Ausführungsbeispiel ermöglicht nun die Montage des nicht­ linearen Kristalls 12 mit dem integrierten Auskoppelspiegel S2 auf eine Piezokeramik 16 mit einem Generator 17 und die Bedampfung der zusätzlich entstehenden, einander gegenüberstehenden Flächen F zwischen den beiden Kristallen 11, 12 mit einer bei der Pump-, Grund- und Laserwellenlänge entspiegelnden (AR) Schicht S3 - aufgrund des Betriebes auf einer longitu­ dinalen Mode und der direkten Proportionalität von Resonatoränderung und Frequenzverschiebung - eine Durchstimmung sowohl der Grundwellenlänge des Lasers über den Bereich mehrerer Verstärkungsbandbreiten des laseraktiven Materials als auch der zweiten Harmonischen.In the present exemplary embodiment, the mounting of the non-linear crystal 12 with the integrated decoupling mirror S 2 on a piezoceramic 16 with a generator 17 and the vaporization of the additionally occurring, opposing surfaces F between the two crystals 11 , 12 with a , Base and laser wavelength anti-reflective (AR) layer S 3 - due to the operation in a longitudinal mode and the direct proportionality of the resonator change and frequency shift - an adjustment of both the base wavelength of the laser over the range of several amplification bandwidths of the laser-active material and the second harmonic .

Funktion und Aufbau des vorgeschlagenen Diodengepumpten Mikrokristall-La­ sers im Sichtbaren Wellenlängenbereich sind in der Figur der Zeichnung so wiedergegeben, daß weitere Ausführungen hierfür für einen Fachmann nicht mehr erforderlich erscheinen.Function and structure of the proposed diode-pumped microcrystalline La This is so in the visible wavelength range in the figure of the drawing reproduced that further explanations for this for a specialist are not seem more necessary.

Claims (1)

Festkörperlaser, der im sichtbaren Wellenlängenbereich betrieben wird, dessen Festkörpermaterial, bestehend aus einem einseitig als Einkoppel­ spiegel verspiegelten Laserkristall und einem nichtlinearen Kristall, optisch mittels Laserdioden gepumpt wird und das Pumplicht longitudinal in die Resonatormode fokussiert wird, wobei der Resonator des Festkörperla­ sers aus einem Laserkristall, der an seiner der Laserdiode zugewandten Seite als Einkoppelspiegel ausgebildet ist und einem nichtlinearen Kri­ stall, welcher an seiner der Laserdiode abgewandten Seite als Auskoppel­ spiegel ausgeführt ist, gebildet wird und eine Resonatorlänge von < 1 mm aufweist, wobei die Kristalle nach Schliff, Beschichtung und Montage die Ausbildung einer Resonatormode gewährleisten und zur Bildung eines Laser­ resonators beide Kristalle optisch kontaktiert sind, dadurch gekennzeich­ net, daß der Laserkristall (11) und der nichtlineare Kristall (12) räumlich voneinander getrennt angeordnet und die einander gegenüberliegen­ den Flächen der beiden Kristalle (11, 12) mit einer bei der Grund-, Laser- und Pumpwellenlänge antireflektierenden (AR) Schicht (S3) versehen sind und dem nichtlinearen Kristall (12) eine mit einem HF-Generator (17) versehene Piezokeramik (16) zugeordnet ist, womit eine Abstimmung und Modulation der grund- und der frequenzverdoppelten oder frequenzgemischten Wellenlänge unter Beibehaltung der spezifischen Eigenschaften eines Mikrokristalls gewährleistet wird.Solid-state laser, which is operated in the visible wavelength range, the solid material, consisting of a laser crystal mirrored on one side as a coupling mirror and a non-linear crystal, is optically pumped by means of laser diodes and the pump light is focused longitudinally into the resonator mode, the resonator of the solid-state laser being made of a laser crystal , which is designed on its side facing the laser diode as a coupling mirror and a non-linear Kri stall, which is designed on its side facing away from the laser diode as a coupling mirror, is formed and has a resonator length of <1 mm, the crystals after grinding, coating and Assembly ensure the formation of a resonator mode and to form a laser resonator both crystals are optically contacted, characterized in that the laser crystal ( 11 ) and the non-linear crystal ( 12 ) are spatially separated from each other and each other opposite the surfaces of the two crystals ( 11 , 12 ) are provided with an anti-reflective (AR) layer (S 3 ) at the basic, laser and pump wavelength and the non-linear crystal ( 12 ) is provided with an HF generator ( 17 ) Provided piezoceramic ( 16 ) is assigned, whereby a tuning and modulation of the fundamental and frequency-doubled or frequency-mixed wavelength is ensured while maintaining the specific properties of a microcrystalline.
DE19904042440 1990-12-21 1990-12-21 SOLID LASER Expired - Fee Related DE4042440C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19904042440 DE4042440C2 (en) 1990-12-21 1990-12-21 SOLID LASER

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19904042440 DE4042440C2 (en) 1990-12-21 1990-12-21 SOLID LASER
DE19904041131 DE4041131A1 (en) 1990-12-21 1990-12-21 Solid body laser with longitudinal unimodal operation - has resonator contg. laser crystal and nonlinear crystal which guarantee resonator mode formation

Publications (2)

Publication Number Publication Date
DE4042440A1 true DE4042440A1 (en) 1992-07-09
DE4042440C2 DE4042440C2 (en) 1993-11-04

Family

ID=25899639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19904042440 Expired - Fee Related DE4042440C2 (en) 1990-12-21 1990-12-21 SOLID LASER

Country Status (1)

Country Link
DE (1) DE4042440C2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4229500A1 (en) * 1992-09-04 1994-03-10 Deutsche Aerospace Solid-state hybrid laser system - with laser diode chip and associated cooling and temp. regulation elements contained in standard housing
DE4306919A1 (en) * 1993-03-05 1994-09-08 Deutsche Aerospace Microcrystal laser
EP1542036A1 (en) * 2003-12-09 2005-06-15 Raytheon Company Synthetic aperture ladar with chirped modelocked waveform

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2988354B2 (en) * 1996-01-22 1999-12-13 日本電気株式会社 Laser diode pumped solid-state laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0455383A2 (en) * 1990-04-30 1991-11-06 Amoco Corporation Internally-doubled, composite-cavity microlaser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0455383A2 (en) * 1990-04-30 1991-11-06 Amoco Corporation Internally-doubled, composite-cavity microlaser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Zeitschr.: "Optics Letters", Vol. 12, No. 12, December 1987, S. 999-1001 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4229500A1 (en) * 1992-09-04 1994-03-10 Deutsche Aerospace Solid-state hybrid laser system - with laser diode chip and associated cooling and temp. regulation elements contained in standard housing
DE4306919A1 (en) * 1993-03-05 1994-09-08 Deutsche Aerospace Microcrystal laser
US7505488B2 (en) 2001-09-28 2009-03-17 Raytheon Company Synthetic aperture ladar with chirped modelocked waveform
EP1542036A1 (en) * 2003-12-09 2005-06-15 Raytheon Company Synthetic aperture ladar with chirped modelocked waveform

Also Published As

Publication number Publication date
DE4042440C2 (en) 1993-11-04

Similar Documents

Publication Publication Date Title
DE69002874T2 (en) Laser Diode Pumped Power Laser.
DE3883130T2 (en) Transversely pumped, mode-adapted solid-state laser with high efficiency.
DE69300520T2 (en) HIGH-PERFORMANCE LASER WITH FIBER OPTICAL LEAD.
DE19955599B4 (en) Wavelength conversion laser and processing apparatus with such a laser
DE60205500T2 (en) RESONATOR INTERNAL FREQUENCY CONVERSION OF LASER RADIATION
DE112005003025T5 (en) Modifications of a non-linear crystal for a durable high-power laser wavelength conversion
DE69221020T2 (en) Device for optical wavelength change
DE69427771T2 (en) Device with a short-wave light source
DE4039455C2 (en)
DE4042440A1 (en) Diode-pumped solid laser - has sepd. nonlinear crystal bonded to piezoceramic vibrator and equipped with antireflection coating on face towards laser crystal similarly coated
DE19639769B4 (en) Frequency doubled diode pumped solid state laser
DE19601991A1 (en) Laser system used in medicine
DE19946176A1 (en) Diode pumped laser with internal frequency doubling
DE69730917T2 (en) Device for emitting a laser beam
DE69914565T2 (en) OPTICAL PARAMETRIC OSCILLATOR WITH HIGH RADIATION QUALITY
DE4429193A1 (en) Device for generating cross-section homogenized laser radiation and use of this radiation
DE69832733T2 (en) HIGHLY EFFICIENT LASER WITH FREQUENCY DUPLICATION INSIDE THE RESONATOR AND METHOD
DE4041131C2 (en)
DE102008004897A1 (en) Hybrid pump optical parametric oscillator
DE4008226C2 (en)
DE19610371C2 (en) Diode-pumped solid-state lasers
DE3017624A1 (en) ETALON FOR USE IN LASERS
DE19822065C1 (en) All solid-state diode-pumped laser system for producing red laser radiation especially for laser display technology
DE202010018625U1 (en) Laser system with spectral filtering
DE4101522C2 (en)

Legal Events

Date Code Title Description
AC Divided out of

Ref country code: DE

Ref document number: 4041131

Format of ref document f/p: P

AC Divided out of

Ref country code: DE

Ref document number: 4041131

Format of ref document f/p: P

OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: DEUTSCHE AEROSPACE AG, 8000 MUENCHEN, DE

AC Divided out of

Ref country code: DE

Ref document number: 4041131

Format of ref document f/p: P

AC Divided out of

Ref country code: DE

Ref document number: 4041131

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: DAIMLER-BENZ AEROSPACE AKTIENGESELLSCHAFT, 80804 M

8327 Change in the person/name/address of the patent owner

Owner name: DAIMLERCHRYSLER AEROSPACE AKTIENGESELLSCHAFT, 8099

8327 Change in the person/name/address of the patent owner

Owner name: EADS DEUTSCHLAND GMBH, 85521 OTTOBRUNN, DE

8339 Ceased/non-payment of the annual fee