DE4041993A1 - Heterogeneous dielectric ceramic material - useful in electronics as multilayer capacitor - Google Patents

Heterogeneous dielectric ceramic material - useful in electronics as multilayer capacitor

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Publication number
DE4041993A1
DE4041993A1 DE19904041993 DE4041993A DE4041993A1 DE 4041993 A1 DE4041993 A1 DE 4041993A1 DE 19904041993 DE19904041993 DE 19904041993 DE 4041993 A DE4041993 A DE 4041993A DE 4041993 A1 DE4041993 A1 DE 4041993A1
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Prior art keywords
dielectric ceramic
ceramic material
electronics
useful
heterogeneous dielectric
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DE19904041993
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German (de)
Inventor
Hans-Juergen Dr Gesemann
Karin Voelker
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GESEMANN HANS JUERGEN DR
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GESEMANN HANS JUERGEN DR
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Priority to DE19904041993 priority Critical patent/DE4041993A1/en
Publication of DE4041993A1 publication Critical patent/DE4041993A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
    • C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
    • C04B35/4684—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase containing lead compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • C04B35/497—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides
    • C04B35/499—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides containing also titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates

Abstract

A heterogeneous dielectric ceramic material (I) of classification X7R comprises (1) 40-50 wt.% BaTiO3, (2) 9-39 wt.% (PbxSr1-x)((Zn1/3Nb2/3)1-yTiy)O3 (where x = 0.85-0.95 and y = 0.05-0.2) and (3) 16-40 wt.% Pb((Mg1/3NB2/3)z(Ti1-z)O3. 50-100 wt.% of (3) has z = 1 and 0.5- wt.% has z = 0.75-0.85. (I) further comprises ususal additives. USE/ADVANTAGE - (I() are used in electrotechnology and electronics, pref. as multilayer capacitors.

Description

Dielektrische keramische Werkstoffe werden überwiegend in der Elektrotechnik/Elektronik vorzugsweise als Vielschichtkondensatoren eingesetzt.Dielectric ceramic materials are mainly used in the Electrical engineering / electronics preferably as multilayer capacitors used.

Diese Vielschichtkondensatoren sind geschichtet und enthalten Elektroden aus Edelmetall. Aus diesem Grunde besteht eine Aufgabe der Weiterentwicklung auf diesem Gebiet darin, die Schichtanzahl möglichst bei gleichen anderen Parametern zu minimieren. Das kann z. B. durch die Erhöhung der DK-Zahl des Werkstoffes erfolgen. Innerhalb der Vielschichtkondensatoren gehört der Typ X7R mit einem flachen Temperaturgang zu den Haupttypen. Auf diesen Werkstoff richten sich deshalb viele Aktivitäten. Bei Einhaltung der internationalen Normforderungen wird versucht, die DK-Zahl so groß wie möglich zu machen. In Produktion befinden sich Werkstoffe mit DK-Zahlen zwischen 1800 und 2500. Weiterhin gibt es Patente, in denen bereits neue Werkstoffe mit höheren DK-Zahlen vorgeschlagen werden. Bei diesen Patenten wird der Kompromiß recht unterschiedlich geschlossen und man muß die DK-Zahlen im Zusammenhang mit dem technologischen Umfeld sehen. So kann man folgende Gruppen unterscheiden.These multilayer capacitors are layered and contained Precious metal electrodes. For this reason there is one The task of further development in this area is to: Number of layers if possible with the same other parameters minimize. That can e.g. B. by increasing the DK number of Material. Inside the multilayer capacitors belongs to the type X7R with a flat temperature response Main types. Therefore, many focus on this material Activities. In compliance with the international standard requirements an attempt is made to make the DK number as large as possible. In production there are materials with DK numbers between 1800 and 2500. There are also patents in which already new materials with higher DK numbers are proposed. With these patents, the compromise becomes quite different closed and you have the DK numbers in connection with the see the technological environment. So you can see the following groups differentiate.

1. Hochsinternde Werkstoffe auf der Basis von dotiertem BaTiO₃ (JP 61 110 904, EP 2 00 573)1. Highly sintered materials based on doped BaTiO₃ (JP 61 110 904, EP 2 00 573)

Die Nachteile dieser Werkstoffe können wie folgt zusammengefaßt werden:The disadvantages of these materials can be summarized as follows will:

  • - Die hohe Sintertemperatur (1300°C) erfordert Pd-Elektroden und eine silberreiche Legierung 70/30 kann nicht eingesetzt werden.- The high sintering temperature (1300 ° C) requires Pd electrodes and a 70/30 alloy rich in silver cannot be used will.
  • - Die Anforderungen an das BaTiO₃ hinsichtlich Reinheit, Feinheit und Stöchiometrie sind für Produktionsbedingungen nicht einzuhalten, so daß eine Realisierung im Augenblick nur schwer möglich ist und teuer wird.- The requirements for the BaTiO₃ in terms of purity, Fineness and stoichiometry are for production conditions not to be adhered to, so a realization at the moment only is difficult and becomes expensive.
  • - Bei Schwankung der Dotierungshöhe in kleinen Grenzen sind die Ergebnisse nicht reproduzierbar.- If the doping level fluctuates within small limits the results are not reproducible.

Eine andere Gruppe von Werkstoffen geht von den vorhandenen Möglichkeiten aus. Dieser 2. Gruppe, die auch unterhalb 1200°C sintert gilt gegenüber der Erfindung als nächster Stand der Technik.Another group of materials is based on the existing possibilities. This 2nd group, which is also below 1200 ° C  sintering is the next state of the art of the technique.

2. Niedrigsinternde Werkstoffe auf Basis Heterosysteme (EP 2 57 6532. Low-sintering materials based on hetero systems (EP 2 57 653

Dieser Werkstoff besteht aus 55 Gew.-% BaTiO₃ mit SrZrO₃ und 45 Gew.-% Sr0,1 Pb0,7((Zn1/3Nb2/3)0,85Ti0,15)O₃, die getrennt vor­ gebildet, gemischt und gesintert werden. Bei Einhaltung aller Grunddaten einer X7R wird eine DK von 2700 erreicht. Dieser, mit realer Technologie und technischen Rohstoffen herstell­ bare Werkstoff besitzt jedoch folgende Nachteile.This material consists of 55 wt .-% BaTiO₃ with SrZrO₃ and 45 wt .-% Sr 0.1 Pb 0.7 ((Zn 1/3 Nb 2/3 ) 0.85 Ti 0.15 ) O₃, which separately before formed, mixed and sintered. If all basic data of an X7R is observed, a DK of 2700 is achieved. However, this material, which can be produced with real technology and technical raw materials, has the following disadvantages.

  • - Die DK-Zahl 2700 ist noch zu klein.- The DK number 2700 is still too small.
  • - Der Einsatz von (BaSr)(Ti,Zr)O₃ paßt sich schlecht in die Zwischenprodukte einer Produktion ein, die in größeren Mengen BaTiO₃ herstellt.- The use of (BaSr) (Ti, Zr) O₃ fits poorly into the Intermediate products of a production in larger quantities BaTiO₃ manufactures.
  • - Die Verluste bei -55°C, insbesondere bei 4 MHz sind mit fast 10% zu hoch.- The losses at -55 ° C, especially at 4 MHz are with almost 10% too high.

Der im Anspruch 1 angegebenen Erfindung liegt das Problem zugrunde, daß Vielschichtkondensatoren mit weniger Schichten oder größerer Volumenkapazität als die aus dem Stand der Technik bekannten, besonders unter Produktionsbedingungen gegenwärtig nicht herstellbar sind.The invention specified in claim 1 is the problem based on that multilayer capacitors with fewer layers or greater volume capacity than that of the prior art Technology known, especially under production conditions cannot currently be produced.

Die mit der Erfindung erzielbaren Vorteile sind die folgenden. Gegenüber vergleichbaren Werkstoffen nach dem Stand der Technik erreicht der erfindungsgemäße Werkstoff eine höhere DK-Zahl. Gleichzeitig werden noch weitere Parameter verbessert. So erreicht der tan δ einen Wert von 3% bei 1 kHz im gesamten Temperaturbereich von -55°C bis +125°C. Weiterhin bleibt der tan δ bei 6% bei 4 MHz. Ebenso ist es ein Vorteil, daß BaTiO₃ als technisches BaTiO₃ eingesetzt werden kann.The advantages achievable with the invention are as follows. Compared to comparable materials according to the state of the The material according to the invention achieves a higher level of technology DK number. At the same time, further parameters are improved. So the tan δ reaches a value of 3% at 1 kHz in entire temperature range from -55 ° C to + 125 ° C. Farther the tan δ remains at 6% at 4 MHz. It is the same Advantage that BaTiO₃ can be used as a technical BaTiO₃ can.

Im weiteren soll die Erfindung an mehreren Ausführungsbeispielen beschrieben werden.Furthermore, the invention is intended to be based on several exemplary embodiments to be discribed.

Vor der Herstellung des erfindungsgemäßen heterogenen dielektrischen keramischen Werkstoffs müssen die einzelnen Komponenten, die als Ausgangsstoffe dienen, hergestellt werden. Die Art und Weise dieser Herstellung ist allgemein bekannt, es soll aber jeweils eine Methode in den Beispielen angegeben werden.Before producing the heterogeneous dielectric according to the invention ceramic material, the individual components, which serve as starting materials are manufactured. The way of making this is well known  however, one method should be given in each of the examples will.

BaTiO₃BaTiO₃

Aus BaCO₃ und TiO₁ entsteht nach anteiligem Mischen, Verglühen bei 1200°C/2 h und Feinmahlung in einer Trommelmühle BaTiO₃.After partial mixing, BaCO₃ and TiO₁ form Annealing at 1200 ° C / 2 h and fine grinding in a drum mill BaTiO₃.

(Pb0,1Sr0,1)(Zn1/3Nb2/3)0,55Ti0,15)O₃ (SrPZnNb)(Pb 0.1 Sr 0.1 ) (Zn 1/3 Nb 2/3 ) 0.55 Ti 0.15 ) O₃ (SrPZnNb)

Aus Pb₃O₄, SrCO₃, ZnO, Nb₂O₃, TiO₂ entsteht nach anteiligem Mischen, Verglühen bei 950°C/2 h und Feinmahlung in einer Trommelmühle die gewünschte Verbindung.From Pb₃O₄, SrCO₃, ZnO, Nb₂O₃, TiO₂ arises after a proportional Mixing, annealing at 950 ° C / 2 h and fine grinding in one Drum mill the desired connection.

Pb(Mg1/3Nb2/3)O₃ (PMN)Pb (Mg 1/3 Nb 2/3 ) O₃ (PMN)

Aus Pb₃O₄, MgCO₃ und Nb₂O₃ entsteht in einer ersten Stufe aus MgCO₃ und Nb₂O₃ durch anteiliges Mischen, Verglühen bei 1100 °C/3 h und Feinmahlen MgNb₂O₆. In der zweiten Stufe entsteht durch anteiliges Mischen von MgNb₂O₆ und Pb₃O₄, darauffolgendes Verglühen bei 900°C/2 h und Feinmahlung die gewünschte Verbindung.From Pb₃O₄, MgCO₃ and Nb₂O₃ arises in a first stage MgCO₃ and Nb₂O₃ by partial mixing, annealing at 1100 ° C / 3 h and fine grinding MgNb₂O₆. In the second stage arises by proportionally mixing MgNb₂O₆ and Pb₃O₄, the following Annealing at 900 ° C / 2 h and fine grinding the desired Connection.

Pb((Mg1/3Nb2/3)0,5Ti0,2)O₃ (PPMNT)Pb ((Mg 1/3 Nb 2/3 ) 0.5 Ti 0.2 ) O₃ (PPMNT)

Diese Verbindung wird analog der Verbindung PMN hergestellt mit der Ausnahme, daß in der zweiten Herstellungsstufe zusätzlich noch TiO₂ in der Versatz eingeführt wird.This connection is established in the same way as the PMN connection with the exception that in the second stage of manufacture additional still TiO₂ is introduced in the offset.

Die so hergestellten Einzelkomponenten werden entsprechend Tabelle 1 in den genannten Gewichtsanteilen gemischt und zugleich feingemahlen. Nach dem Trocknen der Pulvermischung erfolgt das Verpressen in Tabletten, die bei den angegebenen Temperaturen (1120°C bis 1180°C) gesintert werden. Nach der Kontaktierung mit Einbrennsilber konnten die in Tabelle 1 angegebenen Daten gemessen werden.The individual components produced in this way become corresponding Table 1 in the proportions by weight and finely ground at the same time. After the powder mixture has dried the pressing takes place in tablets, given at the specified Temperatures (1120 ° C to 1180 ° C) are sintered. To contacting with stoving silver was shown in Table 1 specified data can be measured.

Neben der Einhaltung der Grunddaten für Werkstoffe des Typs II und der X7R Temperaturcharakteristik interessieren besonders die DK-Werte, die bis zum Wert 3300 reichen. Auch bei niedrigeren Sintertemperaturen von 1120°C/72 h werden bereits in einigen Fällen DK-Zahlen von 3000 erreicht.In addition to compliance with the basic data for materials of the type II and the X7R temperature characteristics are particularly interesting the DK values that go up to 3300. Also at lower sintering temperatures of 1120 ° C / 72 h already DK numbers of 3000 reached in some cases.

Die Untersuchung des Umfeldes zeigt, daß bei verringerten oder erhöhten Werten des BaTiO₃-Gehaltes die DK-Zahl bereits kleiner ist, so daß das Gebiet der hohen DK-Zahlen im ternären System relativ klein ist (siehe Bild 1). The investigation of the environment shows that with reduced or increased values of the BaTiO₃ content, the DK number is already smaller, so that the area of the high DK numbers in the ternary system is relatively small (see Figure 1).

Claims (1)

Heterogener dielektrischer keramischer Werkstoff der Klassifikation X7R, der aus
40-50 Gew.-% BaTiO₃,
19-38 Gew.-% (PbxSr1-x) ((Zn1/3Nb2/3)1-yTiy)O₃
mit x=0,85 bis 0,95 und y=0,05 bis 0,20 und aus
16-40 Gew.-% Pb((Mg1/3Nb2/3)zTi1-z)O₃ wobei innerhalb der Gew.-% dieser Verbindung 50-100 Gew.-% aus der Verbindung mit z=1 und 0-50 Gew.-% aus der Verbindung mit z=0,75 bis 0,85 bestehen,
hergestellt ist und weitere, für heterogene dielektrische keramische Werkstoffe übliche und bekannte Zusätze oder Instöchiometrien der Ausgangsstoffe oder Dotierungen enthalten kann.Heterogeneous dielectric ceramic material of the classification X7R, which is made of
40-50% by weight BaTiO₃,
19-38 wt .-% (Pb x Sr 1-x ) ((Zn 1/3 Nb 2/3 ) 1-y Ti y ) O₃
with x = 0.85 to 0.95 and y = 0.05 to 0.20 and off
16-40 wt .-% Pb ((Mg 1/3 Nb 2/3 ) z Ti 1-z ) O₃ where within the wt .-% of this compound 50-100 wt .-% of the compound with z = 1 and 0-50 wt .-% consist of the compound with z = 0.75 to 0.85,
is produced and may contain further additives or instoichiometries of the starting materials or dopants which are customary and known for heterogeneous dielectric ceramic materials.
DE19904041993 1990-12-27 1990-12-27 Heterogeneous dielectric ceramic material - useful in electronics as multilayer capacitor Withdrawn DE4041993A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4406812C1 (en) * 1994-03-02 1995-07-06 Fraunhofer Ges Forschung Low sintering temp. dielectric for green tape system
US6278225B1 (en) * 1997-11-18 2001-08-21 Denso Corporation Piezoelectric ceramic composition for use in an ultrasonic wave motor

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Publication number Priority date Publication date Assignee Title
DE2631054A1 (en) * 1975-07-09 1977-01-13 Du Pont MANUFACTURE OF MONOLITHIC CAPACITORS
DE2741890A1 (en) * 1977-09-17 1979-07-05 Philips Patentverwaltung PIEZOELECTRIC CERAMICS
DE2943812A1 (en) * 1978-10-30 1980-05-14 Tdk Electronics Co Ltd CERAMIC DIELECTRIC
DE3213148A1 (en) * 1981-04-13 1982-11-04 Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto TEMPERATURE COMPENSATING CERAMIC DIELECTRICS
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US4503482A (en) * 1982-10-09 1985-03-05 U.S. Philips Corporation Ceramic dielectric basis on bismuth-containing BaTiO3
US4600967A (en) * 1984-08-20 1986-07-15 At&T Technologies, Inc. Ceramic compositions and devices
EP0200484A2 (en) * 1985-04-25 1986-11-05 Tam Ceramics Inc. Ultralow fire ceramic composition
DE3642226A1 (en) * 1985-12-10 1987-06-11 Mitsubishi Mining & Cement Co DIELECTRIC CERAMIC MASS
EP0257593A2 (en) * 1986-08-26 1988-03-02 Nec Corporation Ceramic composition with improved electrical and mechanical properties
DE3732054A1 (en) * 1986-09-24 1988-04-07 Toshiba Kawasaki Kk THICK FILM CAPACITOR
US4858066A (en) * 1988-12-22 1989-08-15 Gte Products Corporation Nonlinear dielectric capacitor for pulse generation applications
DE3924563A1 (en) * 1988-07-28 1990-02-01 Murata Manufacturing Co NON-REDUCING DIELECTRIC CERAMIC COMPOSITION

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631054A1 (en) * 1975-07-09 1977-01-13 Du Pont MANUFACTURE OF MONOLITHIC CAPACITORS
DE2741890A1 (en) * 1977-09-17 1979-07-05 Philips Patentverwaltung PIEZOELECTRIC CERAMICS
DE2943812A1 (en) * 1978-10-30 1980-05-14 Tdk Electronics Co Ltd CERAMIC DIELECTRIC
DE3213148A1 (en) * 1981-04-13 1982-11-04 Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto TEMPERATURE COMPENSATING CERAMIC DIELECTRICS
DE3223736C2 (en) * 1981-07-03 1987-01-15 International Standard Electric Corp., New York, N.Y., Us
DE3223736A1 (en) * 1981-07-03 1983-02-24 International Standard Electric Corp., 10022 New York, N.Y. CERAMIC DIELECTRIC AND CERAMIC CAPACITOR WITH SUCH A DIELECTRIC
US4503482A (en) * 1982-10-09 1985-03-05 U.S. Philips Corporation Ceramic dielectric basis on bismuth-containing BaTiO3
US4600967A (en) * 1984-08-20 1986-07-15 At&T Technologies, Inc. Ceramic compositions and devices
EP0200484A2 (en) * 1985-04-25 1986-11-05 Tam Ceramics Inc. Ultralow fire ceramic composition
DE3642226A1 (en) * 1985-12-10 1987-06-11 Mitsubishi Mining & Cement Co DIELECTRIC CERAMIC MASS
EP0257593A2 (en) * 1986-08-26 1988-03-02 Nec Corporation Ceramic composition with improved electrical and mechanical properties
DE3732054A1 (en) * 1986-09-24 1988-04-07 Toshiba Kawasaki Kk THICK FILM CAPACITOR
DE3924563A1 (en) * 1988-07-28 1990-02-01 Murata Manufacturing Co NON-REDUCING DIELECTRIC CERAMIC COMPOSITION
US4959333A (en) * 1988-07-28 1990-09-25 Murata Manufacturing Co., Ltd. Non-reducing dielectric ceramic composition
US4858066A (en) * 1988-12-22 1989-08-15 Gte Products Corporation Nonlinear dielectric capacitor for pulse generation applications

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4406812C1 (en) * 1994-03-02 1995-07-06 Fraunhofer Ges Forschung Low sintering temp. dielectric for green tape system
US6278225B1 (en) * 1997-11-18 2001-08-21 Denso Corporation Piezoelectric ceramic composition for use in an ultrasonic wave motor

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