DE3888184D1 - Process for the production of masks with structures in the submicrometer range. - Google Patents
Process for the production of masks with structures in the submicrometer range.Info
- Publication number
- DE3888184D1 DE3888184D1 DE88119094T DE3888184T DE3888184D1 DE 3888184 D1 DE3888184 D1 DE 3888184D1 DE 88119094 T DE88119094 T DE 88119094T DE 3888184 T DE3888184 T DE 3888184T DE 3888184 D1 DE3888184 D1 DE 3888184D1
- Authority
- DE
- Germany
- Prior art keywords
- masks
- structures
- production
- submicrometer range
- submicrometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP88119094A EP0369053B1 (en) | 1988-11-17 | 1988-11-17 | Method of manufacturing masks with structures in the submicrometer region |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3888184D1 true DE3888184D1 (en) | 1994-04-07 |
Family
ID=8199575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88119094T Expired - Fee Related DE3888184D1 (en) | 1988-11-17 | 1988-11-17 | Process for the production of masks with structures in the submicrometer range. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5055383A (en) |
EP (1) | EP0369053B1 (en) |
JP (1) | JPH0827533B2 (en) |
DE (1) | DE3888184D1 (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1248534B (en) * | 1991-06-24 | 1995-01-19 | Sgs Thomson Microelectronics | PROCEDURE FOR THE CREATION OF CALIBRATION STRUCTURES PARTICULARLY FOR THE CALIBRATION OF MACHINES FOR MEASURING THE MISALIGNMENT IN INTEGRATED CIRCUITS IN GENERAL. |
KR940010315B1 (en) * | 1991-10-10 | 1994-10-22 | 금성 일렉트론 주식회사 | Method of patterning semiconductor |
US5348619A (en) * | 1992-09-03 | 1994-09-20 | Texas Instruments Incorporated | Metal selective polymer removal |
US6139483A (en) * | 1993-07-27 | 2000-10-31 | Texas Instruments Incorporated | Method of forming lateral resonant tunneling devices |
KR100303279B1 (en) * | 1994-08-27 | 2001-12-01 | 윤종용 | Semiconductor laser diode and manufacturing method therefor |
US5652163A (en) * | 1994-12-13 | 1997-07-29 | Lsi Logic Corporation | Use of reticle stitching to provide design flexibility |
WO1997047997A1 (en) | 1996-06-10 | 1997-12-18 | Holographic Lithography Systems, Inc. | Holographic patterning method and tool for production environments |
US6255038B1 (en) | 1996-06-10 | 2001-07-03 | Optical Switch Corporation | Process for modulating interferometric lithography patterns to record selected discrete patterns in photoresist |
CA2233096C (en) | 1997-03-26 | 2003-01-07 | Canon Kabushiki Kaisha | Substrate and production method thereof |
US6077560A (en) * | 1997-12-29 | 2000-06-20 | 3M Innovative Properties Company | Method for continuous and maskless patterning of structured substrates |
TW460758B (en) | 1998-05-14 | 2001-10-21 | Holographic Lithography System | A holographic lithography system for generating an interference pattern suitable for selectively exposing a photosensitive material |
US6744909B1 (en) | 1999-08-19 | 2004-06-01 | Physical Optics Corporation | Authentication system and method |
US7167615B1 (en) | 1999-11-05 | 2007-01-23 | Board Of Regents, The University Of Texas System | Resonant waveguide-grating filters and sensors and methods for making and using same |
US6255147B1 (en) * | 2000-01-31 | 2001-07-03 | Advanced Micro Devices, Inc. | Silicon on insulator circuit structure with extra narrow field transistors and method of forming same |
US6790782B1 (en) | 2001-12-28 | 2004-09-14 | Advanced Micro Devices, Inc. | Process for fabrication of a transistor gate including high-K gate dielectric with in-situ resist trim, gate etch, and high-K dielectric removal |
US20030173648A1 (en) * | 2002-03-16 | 2003-09-18 | Sniegowski Jeffry Joseph | Multi-die chip and method for making the same |
US6579809B1 (en) | 2002-05-16 | 2003-06-17 | Advanced Micro Devices, Inc. | In-situ gate etch process for fabrication of a narrow gate transistor structure with a high-k gate dielectric |
US6982135B2 (en) | 2003-03-28 | 2006-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pattern compensation for stitching |
US6835262B1 (en) * | 2003-06-19 | 2004-12-28 | Northrop Grumman Corporation | Positive pressure hot bonder |
KR100710200B1 (en) * | 2005-06-27 | 2007-04-20 | 동부일렉트로닉스 주식회사 | method for manufacturing of CMOS image sensor |
DE102013212173B4 (en) * | 2013-06-26 | 2016-06-02 | Robert Bosch Gmbh | MEMS device with a deflectable membrane and a fixed counter element and method for its preparation |
KR20180113585A (en) * | 2016-03-04 | 2018-10-16 | 도쿄엘렉트론가부시키가이샤 | Trim method for patterning during various stages of integration planning |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL255517A (en) * | 1959-09-04 | |||
US3700433A (en) * | 1971-07-12 | 1972-10-24 | United Aircraft Corp | Enhancement of transverse properties of directionally solidified superalloys |
US4209349A (en) * | 1978-11-03 | 1980-06-24 | International Business Machines Corporation | Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching |
US4354896A (en) * | 1980-08-05 | 1982-10-19 | Texas Instruments Incorporated | Formation of submicron substrate element |
US4331708A (en) * | 1980-11-04 | 1982-05-25 | Texas Instruments Incorporated | Method of fabricating narrow deep grooves in silicon |
US4397937A (en) * | 1982-02-10 | 1983-08-09 | International Business Machines Corporation | Positive resist compositions |
DE3242113A1 (en) * | 1982-11-13 | 1984-05-24 | Ibm Deutschland Gmbh, 7000 Stuttgart | METHOD FOR PRODUCING A THIN DIELECTRIC INSULATION IN A SILICON SEMICONDUCTOR BODY |
US4648937A (en) * | 1985-10-30 | 1987-03-10 | International Business Machines Corporation | Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer |
US4654119A (en) * | 1985-11-18 | 1987-03-31 | International Business Machines Corporation | Method for making submicron mask openings using sidewall and lift-off techniques |
EP0280587A1 (en) * | 1987-01-20 | 1988-08-31 | Thomson Components-Mostek Corporation | Spacer masked VLSI process |
-
1988
- 1988-11-17 DE DE88119094T patent/DE3888184D1/en not_active Expired - Fee Related
- 1988-11-17 EP EP88119094A patent/EP0369053B1/en not_active Expired - Lifetime
-
1989
- 1989-10-12 US US07/420,870 patent/US5055383A/en not_active Expired - Fee Related
- 1989-11-17 JP JP29781589A patent/JPH0827533B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0369053B1 (en) | 1994-03-02 |
US5055383A (en) | 1991-10-08 |
EP0369053A1 (en) | 1990-05-23 |
JPH02251849A (en) | 1990-10-09 |
JPH0827533B2 (en) | 1996-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |