DE3817400A1 - HEAT-CONDUCTING, ELECTRICALLY INSULATING ADHESIVE - Google Patents
HEAT-CONDUCTING, ELECTRICALLY INSULATING ADHESIVEInfo
- Publication number
- DE3817400A1 DE3817400A1 DE19883817400 DE3817400A DE3817400A1 DE 3817400 A1 DE3817400 A1 DE 3817400A1 DE 19883817400 DE19883817400 DE 19883817400 DE 3817400 A DE3817400 A DE 3817400A DE 3817400 A1 DE3817400 A1 DE 3817400A1
- Authority
- DE
- Germany
- Prior art keywords
- adhesive
- heat
- conducting
- parts
- adhesive according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/002—Inhomogeneous material in general
- H01B3/006—Other inhomogeneous material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
- C08K7/20—Glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Die Erfindung betrifft einen wärmeleitenden, elektrisch isolierenden Kleber nach der Gattung des Hauptanspruchs.The invention relates to a heat-conducting, electrically insulating Adhesive according to the genus of the main claim.
Derartige Kleber sind bereits bekannt. Sie dienen zum elektrisch isolierenden, gut wärmeleitenden und mechanisch festen Verbinden von elektrisch leitenden Teilen, beispielsweise eines Metallteils mit einem anderen Metallteil oder eines Metallteils mit einem Halblei terkörper (Chip). Beim Verbinden solcher Teile soll einerseits die resultierende Klebeschicht möglichst dünn sein, um eine hohe Wärme leitfähigkeit zu erzielen. Andererseits darf zur Erzielung einer ausreichenden Isolationsspannung eine bestimmte, möglichst defi nierte Dicke nicht unterschritten werden. Dies bereitet bei einer Massenfertigung Schwierigkeiten, wenn nicht im Fertigungsablauf oder im Schichtaufbau der Klebeverbindung zusätzliche Maßnahmen zur Ein stellung einer konstanten Klebeschichtdicke ergriffen werden.Such adhesives are already known. They are used for electrical insulating, good heat conducting and mechanically firm connection of electrically conductive parts, for example a metal part another metal part or a metal part with a half lead body (chip). When connecting such parts on the one hand, the resulting adhesive layer should be as thin as possible to ensure high heat to achieve conductivity. On the other hand, to achieve one sufficient insulation voltage a certain, if possible defi thickness must not be undercut. This prepares one Mass production difficulties if not in the manufacturing process or in the layer structure of the adhesive connection additional measures for the position of a constant adhesive layer thickness can be taken.
Der erfindungsgemäße Kleber mit den kennzeichnenden Merkmalen des Hauptanspruchs bietet demgegenüber den Vorteil, daß bei seiner Verwendung zur Erreichung einer definierten Isolationsspannung ein konstanter Abstand der miteinander zu verbindenden Teile bzw. eine Klebeschicht definierter Dicke ohne zusätzliche Maßnahmen im Ferti gungsablauf eingestellt werden kann. Durch die Verwendung des erfin dungsgemäßen Klebers entfallen auch besondere Maßnahmen im Schicht aufbau der miteinander zu verbindenden Teile, die bisher zur Er reichung einer definierten Isolationsspannung ergriffen werden mußten, beispielsweise die Anordnung isolierender Platten mit zu sätzlichen Klebeschichten zwischen den miteinander zu verbindenden Teilen. Weitere Vorteile ergeben sich aus den Unteransprüchen 2 bis 7 und aus der Beschreibung.The adhesive of the invention with the characteristic features of Main claim offers the advantage that at his Use to achieve a defined insulation voltage constant distance between the parts to be connected or a Adhesive layer of defined thickness without additional measures in the ferti can be set. By using the invented Adhesive according to the invention also eliminates special measures in the layer construction of the parts to be connected to each other, which were previously Er a defined insulation voltage can be taken had, for example, the arrangement of insulating plates with additional adhesive layers between those to be joined together Share. Further advantages result from subclaims 2 to 7 and from the description.
Anhand der Zeichnung wird die Erfindung näher erläutert. Es zeigen:The invention is explained in more detail with reference to the drawing. Show it:
Fig. 1 eine Halbleiteranordnung, bei der ein erstes Metallteil, das als Träger eines Halbleiterkörpers dient, und ein zweites Metall teil, das als Kühlkörper für den Halbleiterkörper dient, unter Zwischenschaltung einer Keramikplatte isolierend und gut wärmelei tend miteinander verbunden sind, Fig. 2 eine Anordnung wie in Fig. 1, bei der jedoch zur elektrisch isolierenden, gut wärmeleitenden Verbindung der beiden Metallteile eine Klebeschicht dient, die unter Verwendung eines erfindungsgemäßen Klebers hergestellt worden ist. Fig. 1 shows a semiconductor arrangement in which a first metal part, which serves as a carrier of a semiconductor body, and a second metal part, which serves as a heat sink for the semiconductor body, with the interposition of a ceramic plate are insulated and well thermally conductive tend to each other, Fig. 2 a Arrangement as in Fig. 1, but in which an adhesive layer is used for the electrically insulating, good heat-conducting connection of the two metal parts, which has been produced using an adhesive according to the invention.
In Fig. 1 ist ein Halbleiterkörper 10 mittels einer Lotschicht 11 auf ein erstes Metallteil 12 aufgelötet, wobei das Metallteil 12 als Wärmeverteiler für die in dem Halbleiterkörper 10 entstehende Ver lustwärme dient. Als Kühlkörper für den Halbleiterkörper 10 dient ein zweites Metallteil 13. Die beiden Metallteile 12, 13 sind mit tels einer Keramikplatte 14 elektrisch isolierend und gut wärmelei tend miteinander verbunden, wobei die Keramikplatte 14 einerseits mit ihrer metallisierten Oberseite mit dem ersten Metallteil 12 über eine Lotschicht 15 verlötet und andererseits mit ihrer nicht metal lisierten Unterseite mit dem zweiten Metallteil 13 über eine Klebe schicht 16 bekannter Art verklebt ist. Durch besondere Maßnahmen, insbesondere durch die Wahl einer bestimmten Dicke und eines be stimmten Materials für die Keramikplatte 14, kann eine ausreichende und definierte Isolationsspannung zwischen den beiden Metallteilen 12 und 13 eingestellt werden.In Fig. 1, a semiconductor body 10 is soldered onto a first metal part 12 by means of a solder layer 11 , the metal part 12 serving as a heat distributor for the heat generated in the semiconductor body 10 . A second metal part 13 serves as a heat sink for the semiconductor body 10 . The two metal parts 12 , 13 are connected to one another by means of a ceramic plate 14 in an electrically insulating and heat-insulating manner, the ceramic plate 14 being soldered on the one hand with its metallized upper side to the first metal part 12 via a solder layer 15 and on the other hand with its non-metalized underside with the second metal part 13 is glued to an adhesive layer 16 of a known type. By means of special measures, in particular by the choice of a certain thickness and a certain material for the ceramic plate 14 , a sufficient and defined insulation voltage can be set between the two metal parts 12 and 13 .
Fig. 2 zeigt eine Anordnung ähnlich der Anordnung nach Fig. 1. Hierbei ist jedoch das aus den Teilen 14, 15, 16 bestehende Verbin dungssystem durch eine einzige Klebeschicht 17 definierter Dicke er setzt. Fig. 2 shows an arrangement similar to the arrangement of FIG. 1. Here, however, the connec tion system consisting of the parts 14 , 15 , 16 by a single adhesive layer 17 defined thickness he sets.
Erfindungsgemäß ist die Klebeschicht 17 unter Verwendung eines gut wärmeleitenden, elektrisch isolierenden Klebers hergestellt, bei dem dem Kleber-Grundmaterial ein hoher Anteil mindestens eines gut wär meleitenden Füllstoffs und ein Anteil eines festen Zusatzstoffs bei gemischt ist, der aus einer Vielzahl mindestens annähernd gleich großer Teile 18 besteht. Als fester Zusatzstoff wird bevorzugt Glas in Form kleiner Kugeln mit entsprechend geeignetem Durchmesser, bei spielsweise 200 µm, verwendet. Als Kleber-Grundmaterial kann Epoxidharz, als gut wärmeleitender Füllstoff eine oder verschiedene Verbindungen zwischen Elementen der dritten und fünften Hauptgruppe des periodischen Systems der Elemente, beispielsweise Aluminium nitrid (AlN) verwendet werden, wobei bei einem Epoxidharz-Kleber der Anteil des gut wärmeleitenden Füllstoffs, bezogen auf die gesamte Klebmasse, ungefähr 70% betragen kann. According to the invention, the adhesive layer 17 is produced using a good heat-conducting, electrically insulating adhesive, in which the adhesive base material is mixed with a high proportion of at least one heat-conducting filler and a proportion of a solid additive that consists of a large number of at least approximately equally large parts 18 exists. Glass in the form of small spheres with a suitable diameter, for example 200 μm, is preferably used as the solid additive. Epoxy resin can be used as the adhesive base material, and one or different connections between elements of the third and fifth main group of the periodic system of the elements, for example aluminum nitride (AlN), can be used as a good heat-conducting filler, the proportion of the good heat-conducting filler in an epoxy resin adhesive, based on the total adhesive, can be about 70%.
Durch Wahl eines bestimmten Anteils des festen Zusatzstoffs kann die Dicke der Klebeschicht 17 und damit die Isolationsspannung zwischen den beiden Metallteilen 12 und 13 auf einen bestimmten, für den An wendungsfall geeigneten Wert eingestellt werden.By choosing a certain proportion of the solid additive, the thickness of the adhesive layer 17 and thus the insulation voltage between the two metal parts 12 and 13 can be set to a certain value suitable for the application.
Ein weiterer Vorteil der Anordnung gemäß Fig. 2 gegenüber der gemäß Fig. 1 besteht darin, daß durch geeignete Wahl der Anteile des gut wärmeleitenden Füllstoffs und des festen Zusatzstoffs der thermische Ausdehnungskoeffizient der Klebeschicht 17 an den thermischen Aus dehnungskoeffizienten der Metallteile 12 und 13 angepaßt werden kann, so daß in dem Mehrschichtaufbau Metall/Kleber/Metall bei Tem peraturänderungen keine hohen mechanischen Spannungen auftreten, die bei der Verwendung von Keramik als Verbindungsmittel zwischen den beiden Metallteilen (Fig. 1) häufig zu Problemen in der Temperatur wechselfestigkeit führen.Another advantage of the arrangement according to FIG. 2 compared to that of FIG. 1 is that the thermal expansion coefficient of the adhesive layer 17 to the thermal expansion coefficients of the metal parts 12 and 13 are adapted by a suitable choice of the proportions of the highly thermally conductive filler and the solid additive can, so that in the multi-layer structure metal / adhesive / metal temperature changes do not occur at high temperature stresses, which often lead to problems in temperature fatigue strength when using ceramic as a connecting means between the two metal parts ( FIG. 1).
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19883817400 DE3817400A1 (en) | 1988-05-21 | 1988-05-21 | HEAT-CONDUCTING, ELECTRICALLY INSULATING ADHESIVE |
PCT/DE1989/000276 WO1989011723A1 (en) | 1988-05-21 | 1989-04-28 | Heat-conducting, electrically insulating adhesive |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19883817400 DE3817400A1 (en) | 1988-05-21 | 1988-05-21 | HEAT-CONDUCTING, ELECTRICALLY INSULATING ADHESIVE |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3817400A1 true DE3817400A1 (en) | 1989-11-30 |
Family
ID=6354884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19883817400 Withdrawn DE3817400A1 (en) | 1988-05-21 | 1988-05-21 | HEAT-CONDUCTING, ELECTRICALLY INSULATING ADHESIVE |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE3817400A1 (en) |
WO (1) | WO1989011723A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19701731A1 (en) * | 1997-01-20 | 1998-07-23 | Bosch Gmbh Robert | Control unit consisting of at least two housing parts |
DE19817193B4 (en) * | 1998-04-17 | 2006-04-13 | Robert Bosch Gmbh | Radiation and / or thermosetting adhesive with high thermal conductivity and its use |
CN108428681A (en) * | 2017-02-14 | 2018-08-21 | 乐金电子研发中心(上海)有限公司 | The power electronic equipment of front side conductive backside radiator |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0724270B2 (en) * | 1989-12-14 | 1995-03-15 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
DE4401608C1 (en) * | 1994-01-20 | 1995-07-27 | Siemens Ag | Thermally conductive electrically insulating adhesive joint |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1273843A (en) * | 1960-11-18 | 1961-10-13 | Thomson Houston Comp Francaise | Method for insulating conductors |
DE1213500B (en) * | 1961-09-28 | 1966-03-31 | Philips Patentverwaltung | Heat well conductive insulating film with filler |
FR81082E (en) * | 1962-02-02 | 1963-07-26 | Thomson Houston Comp Francaise | Method for insulating conductors |
FR2480488A1 (en) * | 1980-04-15 | 1981-10-16 | Eaton Manford | Heat conducting and electrically insulating binder - comprising e.g. metal oxide particles in adhesive matrix e.g. silicone used for heat transfer |
-
1988
- 1988-05-21 DE DE19883817400 patent/DE3817400A1/en not_active Withdrawn
-
1989
- 1989-04-28 WO PCT/DE1989/000276 patent/WO1989011723A1/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19701731A1 (en) * | 1997-01-20 | 1998-07-23 | Bosch Gmbh Robert | Control unit consisting of at least two housing parts |
DE19817193B4 (en) * | 1998-04-17 | 2006-04-13 | Robert Bosch Gmbh | Radiation and / or thermosetting adhesive with high thermal conductivity and its use |
CN108428681A (en) * | 2017-02-14 | 2018-08-21 | 乐金电子研发中心(上海)有限公司 | The power electronic equipment of front side conductive backside radiator |
Also Published As
Publication number | Publication date |
---|---|
WO1989011723A1 (en) | 1989-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0698290B1 (en) | Power semiconductor device with stress buffer layer | |
EP0931346B1 (en) | Microelectronic component with a sandwich design | |
DE102015118633B4 (en) | A power semiconductor module with a direct copper bonded substrate and an integrated passive component and an integrated power module as well as a method for producing the power semiconductor module | |
DE102014115847B4 (en) | Method for producing a power semiconductor module | |
DE60111753T2 (en) | THICK FILM MILLIMETER WAVE TRANSMISSION RECEIVER MODULE | |
DE3601130A1 (en) | FASTENING ARRANGEMENT FOR SEMICONDUCTOR COMPONENTS | |
WO1998015005A9 (en) | Microelectronic component with a sandwich design | |
DE102008001414A1 (en) | Substrate circuit module with components in multiple contacting levels | |
DE10149580A1 (en) | Semiconductor device | |
DE2411259A1 (en) | INTEGRATED CIRCUIT AND METHOD FOR ITS MANUFACTURING | |
EP1008231A2 (en) | Power module with a circuit arrangement comprising active semiconductor components and passive components, and method for producing same | |
EP0368143A2 (en) | Electronic control apparatus | |
EP0338447A2 (en) | Device for dissipating heat of components on a printed-circuit board | |
DE102016226231A1 (en) | INSULATED BUSBAR, METHOD FOR MANUFACTURING AN INSULATED BUSBAR AND ELECTRONIC DEVICE | |
DE102011080153A1 (en) | Power semiconductor module for use at outer wall of motor, has component or contact surface exhibiting direct connection with one substrate and arranged between respective substrates and metallization layer that is attached on substrates | |
DE102016214607B4 (en) | Electronic module and method for its manufacture | |
DE3106376A1 (en) | SEMICONDUCTOR ARRANGEMENT WITH CONNECTING CABLES cut out of sheet metal | |
DE69735610T2 (en) | Mounting structure for an integrated circuit | |
DE3817400A1 (en) | HEAT-CONDUCTING, ELECTRICALLY INSULATING ADHESIVE | |
EP1220314B1 (en) | Power Semiconductor Modul | |
DE69728648T2 (en) | SEMICONDUCTOR DEVICE WITH HIGH FREQUENCY BIPOLAR TRANSISTOR ON AN INSULATING SUBSTRATE | |
DE3243689A1 (en) | SEMICONDUCTOR DEVICE | |
DE3635375A1 (en) | Lead frame for electronic components | |
DE3545560A1 (en) | ELECTRICAL PRESSURE FITTING SOCKET FOR A DIRECT CONNECTION TO A SEMICONDUCTOR CHIP | |
DE3930858A1 (en) | Modular electronic power circuit - with power components supported by metallised ceramics layer and enclosed by overlying insulation layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |