DE3682171D1 - Entzerrte matrixvorspannung fuer proms und eproms. - Google Patents

Entzerrte matrixvorspannung fuer proms und eproms.

Info

Publication number
DE3682171D1
DE3682171D1 DE8686112824T DE3682171T DE3682171D1 DE 3682171 D1 DE3682171 D1 DE 3682171D1 DE 8686112824 T DE8686112824 T DE 8686112824T DE 3682171 T DE3682171 T DE 3682171T DE 3682171 D1 DE3682171 D1 DE 3682171D1
Authority
DE
Germany
Prior art keywords
proms
eproms
preload
corrected matrix
corrected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686112824T
Other languages
English (en)
Inventor
Jeffrey K Kaszubinski
David D Wilmoth
Timmie M Coffman
John F Schreck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE3682171D1 publication Critical patent/DE3682171D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
DE8686112824T 1985-10-15 1986-09-17 Entzerrte matrixvorspannung fuer proms und eproms. Expired - Lifetime DE3682171D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/786,991 US4722075A (en) 1985-10-15 1985-10-15 Equalized biased array for PROMS and EPROMS

Publications (1)

Publication Number Publication Date
DE3682171D1 true DE3682171D1 (de) 1991-11-28

Family

ID=25140131

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686112824T Expired - Lifetime DE3682171D1 (de) 1985-10-15 1986-09-17 Entzerrte matrixvorspannung fuer proms und eproms.

Country Status (4)

Country Link
US (1) US4722075A (de)
EP (1) EP0225442B1 (de)
JP (1) JPS62177796A (de)
DE (1) DE3682171D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2513795B2 (ja) * 1988-07-22 1996-07-03 沖電気工業株式会社 Ｍｏｓ型半導体記憶装置
US4903237A (en) * 1988-08-02 1990-02-20 Catalyst Semiconductor, Inc. Differential sense amplifier circuit for high speed ROMS, and flash memory devices
JPH0654873B2 (ja) * 1989-09-04 1994-07-20 株式会社東芝 プログラマブル型論理装置
US5027321A (en) * 1989-11-21 1991-06-25 Intel Corporation Apparatus and method for improved reading/programming of virtual ground EPROM arrays
US5128895A (en) * 1989-11-21 1992-07-07 Intel Corporation Method for programming a virtual ground EPROM cell including slow ramping of the column line voltage
EP0432481A3 (en) * 1989-12-14 1992-04-29 Texas Instruments Incorporated Methods and apparatus for verifying the state of a plurality of electrically programmable memory cells
US5020026A (en) * 1989-12-14 1991-05-28 Texas Instruments Incorporated Method and apparatus for reading and programming electrically programmable memory cells
IT1243085B (it) * 1990-09-28 1994-05-23 Face Standard Spa Alcatel Metodo per l'assegnazione degli slot in una rete a stella di tipo ucol e dispositivo elettronico per eseguire tale metodo.
US5287315A (en) * 1991-01-31 1994-02-15 Texas Instruments Incorporated Skewed reference to improve ones and zeros in EPROM arrays

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843838B2 (ja) * 1979-02-28 1983-09-29 富士通株式会社 読取り専用メモリ
JPS5847796B2 (ja) * 1979-05-26 1983-10-25 富士通株式会社 半導体メモリ装置
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
US4344154A (en) * 1980-02-04 1982-08-10 Texas Instruments Incorporated Programming sequence for electrically programmable memory
US4387447A (en) * 1980-02-04 1983-06-07 Texas Instruments Incorporated Column and ground select sequence in electrically programmable memory
US4314362A (en) * 1980-02-04 1982-02-02 Texas Instruments, Incorporated Power down sequence for electrically programmable memory
US4460981A (en) * 1981-12-24 1984-07-17 Intel Corporation Virtual ground memory
JPS6095794A (ja) * 1983-10-28 1985-05-29 Hitachi Ltd 半導体集積回路
JPS60211699A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
JPS62177796A (ja) 1987-08-04
EP0225442B1 (de) 1991-10-23
US4722075A (en) 1988-01-26
EP0225442A2 (de) 1987-06-16
EP0225442A3 (en) 1989-03-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition