DE3676099D1 - BIPOLAR TRANSISTOR WITH HETEROUITION AND METHOD FOR PRODUCING THE SAME. - Google Patents

BIPOLAR TRANSISTOR WITH HETEROUITION AND METHOD FOR PRODUCING THE SAME.

Info

Publication number
DE3676099D1
DE3676099D1 DE8686400418T DE3676099T DE3676099D1 DE 3676099 D1 DE3676099 D1 DE 3676099D1 DE 8686400418 T DE8686400418 T DE 8686400418T DE 3676099 T DE3676099 T DE 3676099T DE 3676099 D1 DE3676099 D1 DE 3676099D1
Authority
DE
Germany
Prior art keywords
heterouition
producing
same
bipolar transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686400418T
Other languages
German (de)
Inventor
Toshio Ohshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3676099D1 publication Critical patent/DE3676099D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
DE8686400418T 1985-02-28 1986-02-27 BIPOLAR TRANSISTOR WITH HETEROUITION AND METHOD FOR PRODUCING THE SAME. Expired - Lifetime DE3676099D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60039120A JPS61198776A (en) 1985-02-28 1985-02-28 Hetero-junction bipolar transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
DE3676099D1 true DE3676099D1 (en) 1991-01-24

Family

ID=12544229

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686400418T Expired - Lifetime DE3676099D1 (en) 1985-02-28 1986-02-27 BIPOLAR TRANSISTOR WITH HETEROUITION AND METHOD FOR PRODUCING THE SAME.

Country Status (5)

Country Link
US (2) US4924283A (en)
EP (1) EP0194197B1 (en)
JP (1) JPS61198776A (en)
KR (1) KR890004972B1 (en)
DE (1) DE3676099D1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198776A (en) * 1985-02-28 1986-09-03 Fujitsu Ltd Hetero-junction bipolar transistor and manufacture thereof
EP0387010A3 (en) * 1989-03-08 1990-10-10 Matsushita Electric Industrial Co., Ltd. Hetero-junction bipolar transistor
JPH02297942A (en) * 1989-05-11 1990-12-10 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US5212103A (en) * 1989-05-11 1993-05-18 Mitsubishi Denki Kabushiki Kaisha Method of making a heterojunction bipolar transistor
JP2804095B2 (en) * 1989-07-10 1998-09-24 株式会社東芝 Heterojunction bipolar transistor
US5187110A (en) * 1990-10-05 1993-02-16 Allied-Signal Inc. Field effect transistor-bipolar transistor darlington pair
US5352911A (en) * 1991-10-28 1994-10-04 Trw Inc. Dual base HBT
EP0562272A3 (en) * 1992-03-23 1994-05-25 Texas Instruments Inc Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
JP2971246B2 (en) * 1992-04-15 1999-11-02 株式会社東芝 Method for manufacturing hetero bipolar transistor
US5448087A (en) * 1992-04-30 1995-09-05 Trw Inc. Heterojunction bipolar transistor with graded base doping
US5365089A (en) * 1992-12-23 1994-11-15 International Business Machines Corporation Double heterojunction bipolar transistor and the method of manufacture therefor
US5330932A (en) * 1992-12-31 1994-07-19 Texas Instruments Incorporated Method for fabricating GaInP/GaAs structures
FR2736468B1 (en) * 1995-07-07 1997-08-14 Thomson Csf BIPOLAR TRANSISTOR WITH OPTIMIZED STRUCTURE
JP3087671B2 (en) * 1996-12-12 2000-09-11 日本電気株式会社 Bipolar transistor and method of manufacturing the same
DE19718624A1 (en) * 1997-05-02 1998-11-05 Daimler Benz Ag Heterobipolar transistor with multilayer emitter structure
US6563145B1 (en) * 1999-04-19 2003-05-13 Chang Charles E Methods and apparatus for a composite collector double heterojunction bipolar transistor
JP3565274B2 (en) * 2002-02-25 2004-09-15 住友電気工業株式会社 Bipolar transistor
US8530933B2 (en) * 2008-10-10 2013-09-10 National Institute Of Advanced Industrial Science And Technology Photo transistor
KR101106062B1 (en) * 2009-09-03 2012-01-18 (주)삼진제이엠씨 Ball valve capable of precisely controlling quantity of fluid flow

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484211A (en) * 1981-02-04 1984-11-20 Matsushita Electric Industrial Co., Ltd. Oxide walled emitter
US4573064A (en) * 1981-11-02 1986-02-25 Texas Instruments Incorporated GaAs/GaAlAs Heterojunction bipolar integrated circuit devices
US4672404A (en) * 1982-09-17 1987-06-09 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4593305A (en) * 1983-05-17 1986-06-03 Kabushiki Kaisha Toshiba Heterostructure bipolar transistor
FR2547677B1 (en) * 1983-06-17 1986-10-31 Ankri David BIPOLAR DOUBLE HETEROJUNCTION TRANSISTOR COMPATIBLE WITH OPTOELECTRONIC COMPONENTS FOR MONOLITHIC INTEGRATION
JPS6010776A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Manufacture of bipolar semiconductor device
JPS6035570A (en) * 1984-04-13 1985-02-23 Hitachi Ltd Wide gap emitter transistor
JPS6158268A (en) * 1984-08-30 1986-03-25 Fujitsu Ltd High speed semiconductor d4evice
DE3564518D1 (en) * 1984-09-29 1988-09-22 Toshiba Kk Heterojunction bipolar transistor and method of manufacturing the same
JPS6182474A (en) * 1984-09-29 1986-04-26 Toshiba Corp Manufacture of hetero junction bipolar transistor
JPS61123175A (en) * 1984-11-20 1986-06-11 Toshiba Corp Manufacture of hetero-junction bipolar transistor
JPS61137364A (en) * 1984-12-10 1986-06-25 Matsushita Electric Ind Co Ltd Semiconductor device
JPS61187271A (en) * 1985-02-14 1986-08-20 Sony Corp Hetero-junction type bipolar transistor
JPS61198776A (en) * 1985-02-28 1986-09-03 Fujitsu Ltd Hetero-junction bipolar transistor and manufacture thereof
JPS6249659A (en) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd Heterojunction bipolar transistor and manufacture thereof
US4716445A (en) * 1986-01-17 1987-12-29 Nec Corporation Heterojunction bipolar transistor having a base region of germanium
US4872040A (en) * 1987-04-23 1989-10-03 International Business Machines Corporation Self-aligned heterojunction transistor
US4839303A (en) * 1987-10-13 1989-06-13 Northrop Corporation Planar bipolar transistors including heterojunction transistors and method
US4839702A (en) * 1987-11-20 1989-06-13 Bell Communications Research, Inc. Semiconductor device based on charge emission from a quantum well

Also Published As

Publication number Publication date
KR860006842A (en) 1986-09-15
KR890004972B1 (en) 1989-12-02
US4996166A (en) 1991-02-26
JPS61198776A (en) 1986-09-03
US4924283A (en) 1990-05-08
JPH0458703B2 (en) 1992-09-18
EP0194197B1 (en) 1990-12-12
EP0194197A1 (en) 1986-09-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition