DE3614849A1 - Method for producing a welded joint between the contact element of a semiconductor and an electrical connector - Google Patents

Method for producing a welded joint between the contact element of a semiconductor and an electrical connector

Info

Publication number
DE3614849A1
DE3614849A1 DE19863614849 DE3614849A DE3614849A1 DE 3614849 A1 DE3614849 A1 DE 3614849A1 DE 19863614849 DE19863614849 DE 19863614849 DE 3614849 A DE3614849 A DE 3614849A DE 3614849 A1 DE3614849 A1 DE 3614849A1
Authority
DE
Germany
Prior art keywords
contact element
connector
welding
semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19863614849
Other languages
German (de)
Inventor
Helmut Dipl Phys Bebermeier
Hayo Dipl Ing Braasch
Norbert Dipl Phys Pchalek
Stefan Dipl Ing Reul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19863614849 priority Critical patent/DE3614849A1/en
Publication of DE3614849A1 publication Critical patent/DE3614849A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
    • H01R43/0207—Ultrasonic-, H.F.-, cold- or impact welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A method for producing a welded joint between the contact element of a semiconductor, especially a solar cell, and an electrical connector, by means of a resistance welding process. In order to avoid impurities exacerbating or even preventing a good welded joint, the connector is initially welded on to the contact element by means of at least one ultrasound welding pulse. Subsequently, the resistance welding process is carried out in order actually to weld the contact element and the connector. A soft ultrasound welding pulse can be used, which produces a minimum mechanical adhesion strength between the contact element and the connector.

Description

Die Erfindung betrifft ein Verfahren gemäß dem Oberbegriff von Anspruch 1.The invention relates to a method according to the preamble of claim 1.

Elektrische Widerstandsschweißverfahren sind allgemein bekannt, z. B. als Stumpfschweißverfahren zur Verbindung von Blechen, Rohrleitungen, Schienen oder dergleichen. Auch ist es bekannt, für Mikroschweißvorgänge zur elek­ trischen Verschaltung von Halbleiterbauelementen, insbesondere von Solar­ zellen, das elektrische Widerstandsschweißverfahren einzusetzen.Electrical resistance welding methods are generally known, e.g. B. as Butt welding process for connecting sheets, pipes, rails or similar. It is also known to use elec trical interconnection of semiconductor components, especially solar cells to use the electrical resistance welding process.

Um eine gleichbleibende Haftfestigkeit der letztgenannten Schweißverbin­ dungen zu erreichen, ohne das Halbleiterbauelement Solarzelle zu beschädigen, muß die Schweißenergie sehr genau dosiert werden. Die Qualität der Schweißungen hängt jedoch nicht nur von der Genauigkeit der für den Schweiß­ vorgang vorgegebenen Spannung, sondern auch von den Übergangs- und Mate­ rialwiderständen der Schweißung ab. Insbesondere können Verunreinigungen auf den Schweißelektroden oder Schweißelektrodenabbrand die Schweißung beeinträchtigen. Es ist bekannt, derartige Verunreinigungen, vorzugsweise Oberflächenverschmutzungen, durch zusätzliche chemische oder mechanische Reinigungsschritte zu beseitigen. Dieses ist umständlich, zeitraubend und kostenaufwendig.For a constant adhesive strength of the latter weld joint achievements without damaging the semiconductor device solar cell, the welding energy must be dosed very precisely. The quality of the However, welds don't just depend on the accuracy of the weld operation given tension, but also from the transition and mate resistance of the weld. In particular, impurities  on the welding electrodes or welding electrode burn-off affect. It is known to prefer such contaminants Surface contamination through additional chemical or mechanical Eliminate cleaning steps. This is cumbersome, time consuming and expensive.

Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren der eingangs ge­ nannten Art zu schaffen, durch das auf einfache Weise vermieden wird, daß Verunreinigungen eine gute Schweißverbindung erschweren oder sogar ver­ hindern.The invention has for its object a method of ge called type to create, by which is easily avoided that Impurities make a good weld connection difficult or even ver prevent.

Die Aufgabe wird erfindungsgemäß dadurch gelöst, daß der Verbinder zu­ nächst durch mindestens einen Ultraschallschweißimpuls auf das Kontaktele­ ment aufgeschweißt wird, und daß anschließend der Widerstandsschweißprozeß zur eigentlichen Verschweißung des Kontaktelementes und des Verbinders durchgeführt wird.The object is achieved in that the connector too next by at least one ultrasonic welding pulse on the contact element ment is welded, and that then the resistance welding process for the actual welding of the contact element and the connector is carried out.

Ausgestaltungen der Erfindung gehen dahin, daßEmbodiments of the invention are such that

  • 1. ein weicher, eine minimale mechanische Haftfestigkeit zwischen dem Kontaktelement und dem Verbinder bewirkender Ultraschallschweißimpuls verwendet wird,1. a soft, minimal mechanical adhesive strength between the Contact element and the connector causing ultrasonic welding pulse is used,
  • 2. der Ultraschallschweißimpuls derart abgestimmt wird, daß Restkontami­ nationen auf dem Kontaktelement bzw. dem Verbinder aufgebrochen werden, und2. the ultrasonic welding pulse is adjusted so that residual contami nations are broken open on the contact element or the connector, and
  • 3. für die beiden Teilschweißvorgänge unterschiedliche oder gleiche Elek­ troden verwendet werden.3. for the two partial welding processes different or the same elec treads are used.

Ein wesentlicher Vorteil der Erfindung liegt darin, daß durch den bzw. die zusätzlichen Ultraschallschweißimpulse ein metallisches Gefüge geschaffen wird, das einen homogenen elektrischen Übergangswiderstand zwischen dem Kontaktelement und dem Verbinder schafft. Somit können vorteilhafterweise wesentlich weichere Schweißimpulse für die anschließende Widerstands­ schweißung verwendet werden, die zu einer geringeren Belastung des Halb­ leiters führen. Hierdurch werden eine homogene Qualität der Schweißver­ bindung und damit die volle Raumfahrttauglichkeit von Solarzellen bzw. Solarzellengeneratoren sowie eine geringere Bruchrate von Halbleiterbau­ elementen, vorzugsweise von Solarzellen sichergestellt.A major advantage of the invention is that by the additional ultrasonic welding pulses created a metallic structure that has a homogeneous electrical contact resistance between the Contact element and the connector creates. Thus, advantageously  Much softer welding impulses for the subsequent resistance Welding can be used, which results in less stress on the half leader. This ensures a homogeneous quality of the welding process binding and thus the full space suitability of solar cells or Solar cell generators as well as a lower breakage rate of semiconductor construction elements, preferably ensured by solar cells.

Es ist möglich, die für den Schweißvorgang erforderliche Ultraschallener­ gie durch die Schweißauflage, d. h. den Schweißtisch zu erzeugen.It is possible to have the ultrasound required for the welding process pour through the welding pad, d. H. to create the welding table.

Claims (6)

1. Verfahren zur Herstellung einer Schweißverbindung zwischen dem Kontakt­ element eines Halbleiters, insbesondere einer Solarzelle, und einem elek­ trischen Verbinder mittels eines Widerstandsschweißprozesses, dadurch ge­ kennzeichnet, daß der Verbinder zunächst durch mindestens einen Ultra­ schallschweißimpuls auf das Kontaktelement aufgeschweißt wird, und daß anschließend der Widerstandsschweißprozeß zur eigentlichen Verschweißung des Kontaktelementes und des Verbinders durchgeführt wird.1. A method for producing a welded connection between the contact element of a semiconductor, in particular a solar cell, and an electrical connector by means of a resistance welding process, characterized in that the connector is first welded onto the contact element by at least one ultrasonic welding pulse, and then that Resistance welding process for the actual welding of the contact element and the connector is carried out. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß ein weicher, eine minimale mechanische Haftfestigkeit zwischen dem Kontaktelement und dem Verbinder bewirkender Ultraschallschweißimpuls verwendet wird.2. The method according to claim 1, characterized in that a soft, minimal mechanical adhesive strength between the contact element and ultrasonic welding pulse causing the connector is used. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß der Ultra­ schallschweißimpuls derart abgestimmt wird, daß Restkontaminationen auf dem Kontaktelement bzw. dem Verbinder aufgebrochen werden. 3. The method according to claim 1 or 2, characterized in that the ultra sound welding pulse is adjusted so that residual contamination the contact element or the connector are broken.   4. Verfahren nach Anspruch 1, 2 oder 3, dadurch gekennzeichnet, daß für die beiden Teilschweißvorgänge unterschiedliche Elektroden verwendet werden.4. The method according to claim 1, 2 or 3, characterized in that for the two partial welding processes used different electrodes will. 5. Verfahren nach Anspruch 1, 2 oder 3, dadurch gekennzeichnet, daß für beide Schweißvorgänge dieselben Elektroden benutzt werden.5. The method according to claim 1, 2 or 3, characterized in that for Both welding processes use the same electrodes. 6. Verfahren nach Anspruch 1, 2, 3, 4, 5, dadurch gekennzeichnet, daß die Ultraschallerzeugung durch die Schweißauflage (-tisch) erfolgt.6. The method according to claim 1, 2, 3, 4, 5, characterized in that the Ultrasound is generated by the welding pad (table).
DE19863614849 1986-05-02 1986-05-02 Method for producing a welded joint between the contact element of a semiconductor and an electrical connector Withdrawn DE3614849A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19863614849 DE3614849A1 (en) 1986-05-02 1986-05-02 Method for producing a welded joint between the contact element of a semiconductor and an electrical connector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19863614849 DE3614849A1 (en) 1986-05-02 1986-05-02 Method for producing a welded joint between the contact element of a semiconductor and an electrical connector

Publications (1)

Publication Number Publication Date
DE3614849A1 true DE3614849A1 (en) 1987-11-05

Family

ID=6299998

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863614849 Withdrawn DE3614849A1 (en) 1986-05-02 1986-05-02 Method for producing a welded joint between the contact element of a semiconductor and an electrical connector

Country Status (1)

Country Link
DE (1) DE3614849A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4340402A1 (en) * 1993-11-26 1995-06-01 Siemens Solar Gmbh Contacting thin layer solar modules
EP0798794A1 (en) * 1996-03-27 1997-10-01 SANYO ELECTRIC Co., Ltd. A cell which secures the reliability of a protective circuit
DE102011051511A1 (en) * 2011-05-17 2012-11-22 Schott Solar Ag Rear contact solar cell and method for producing such
DE102011088198A1 (en) * 2011-12-09 2013-06-13 Continental Teves Ag & Co. Ohg Mounting a sensor element on a measuring support, comprises applying the sensor element on a supporting plate and fixing the supporting plate with the applied sensor element on the measuring support by adopting cold welded connection
DE102012202924A1 (en) * 2012-02-27 2013-08-29 Osram Opto Semiconductors Gmbh Contacting organic optoelectronic component with contacting element, comprises placing contacting element on electrode facing away from a surface of encapsulation and providing first energy input to contacting element using ultrasonic tool

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4340402A1 (en) * 1993-11-26 1995-06-01 Siemens Solar Gmbh Contacting thin layer solar modules
EP0798794A1 (en) * 1996-03-27 1997-10-01 SANYO ELECTRIC Co., Ltd. A cell which secures the reliability of a protective circuit
US5976729A (en) * 1996-03-27 1999-11-02 Sanyo Electric Co., Ltd. Cell which secures the reliability of a protective circuit
DE102011051511A1 (en) * 2011-05-17 2012-11-22 Schott Solar Ag Rear contact solar cell and method for producing such
WO2012156398A1 (en) 2011-05-17 2012-11-22 Schott Solar Ag Back-contact solar cell and method for producing such a back-contact solar cell
DE102011088198A1 (en) * 2011-12-09 2013-06-13 Continental Teves Ag & Co. Ohg Mounting a sensor element on a measuring support, comprises applying the sensor element on a supporting plate and fixing the supporting plate with the applied sensor element on the measuring support by adopting cold welded connection
DE102012202924A1 (en) * 2012-02-27 2013-08-29 Osram Opto Semiconductors Gmbh Contacting organic optoelectronic component with contacting element, comprises placing contacting element on electrode facing away from a surface of encapsulation and providing first energy input to contacting element using ultrasonic tool
DE102012202924B4 (en) 2012-02-27 2021-10-21 Pictiva Displays International Limited Method for contacting an organic, optoelectronic component by means of ultrasound

Similar Documents

Publication Publication Date Title
DE10259365A1 (en) Device and method for removing surface areas of a component
DE3437749A1 (en) Method and device for compressing electrical conductors, and mechanical and electrically conductive connection of these conductors on a support
DE3614849A1 (en) Method for producing a welded joint between the contact element of a semiconductor and an electrical connector
EP1518008A1 (en) Electrochemical method for cleaning the surfaces of metallic work pieces and cleaning electrode
DE3119471C2 (en)
EP0133883B1 (en) Ultrasonicconnector
DE10131691A1 (en) Process for the production of a gas sensor
DE102004012098B3 (en) Quality control process for use during the ultrasound welding of metal film conductors, comprises integrating the process with the welding by monitoring frequency and signal
DE3704200C2 (en)
EP1518303B1 (en) Method for joining lacquered wires in an electrically conducting manner
DE102021005187A1 (en) Method for joining an electronic contact
EP0410211A1 (en) Process for producing an electrically conductive connection between enamelled copper wires and terminals
EP0074464B1 (en) Apparatus for cleaning the inner walls of metallic tubular systems by electropolishing by means of moving electrodes
EP0223027B1 (en) Method and device for keeping the inner area of a tube clean during welding
DE3338757A1 (en) Method for producing non-detachable electrical connections of wires and/or braided cables to one another, and wires and/or braided cables to connecting elements, by means of ultrasound welding, and ultrasound welding device used for this purpose, and associated ultrasound connectors
DE4128908A1 (en) Producing coaxial cable with flexible outer HF screen cover - is by ultrasonically vibrating outer metallic fibre outer cover in solder bath
DE2404759A1 (en) Tantalum capacitor flow production - using carrier tape for suspending capacitors on dummy tantalum wire
DE3443213C1 (en) Method for the non-destructive testing of the adhesion strength of the mechanical connection of electrical leads in the form of wires, and a device for carrying out the method
EP1060827B1 (en) Method and apparatus for treating the interior of metallic tubes
DE3026173C2 (en) Method of joining aluminum parts with parts made of other metals by ultrasonic welding
EP0659908B1 (en) Process for removing residual lead dioxide
DE2161997A1 (en) Nuclear reactor fuel rod - with end plugs welded to sheath tube by improved method
DE1092134B (en) Method and apparatus for manufacturing a housing for an electrical semiconductor device
DE102022105707A1 (en) busbar
DE10108236A1 (en) Conditioning method for switching device containing liquid metal e.g. current limiting device, involves using application of high intensity ultrasound field

Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: TELEFUNKEN SYSTEMTECHNIK GMBH, 7900 ULM, DE

8120 Willingness to grant licences paragraph 23
8127 New person/name/address of the applicant

Owner name: DEUTSCHE AEROSPACE AG, 8000 MUENCHEN, DE

8141 Disposal/no request for examination