DE3530074A1 - Appliance for producing a plurality of successive layers by high-capacity cathode sputtering - Google Patents

Appliance for producing a plurality of successive layers by high-capacity cathode sputtering

Info

Publication number
DE3530074A1
DE3530074A1 DE19853530074 DE3530074A DE3530074A1 DE 3530074 A1 DE3530074 A1 DE 3530074A1 DE 19853530074 DE19853530074 DE 19853530074 DE 3530074 A DE3530074 A DE 3530074A DE 3530074 A1 DE3530074 A1 DE 3530074A1
Authority
DE
Germany
Prior art keywords
process gas
layers
target
successive layers
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19853530074
Other languages
German (de)
Inventor
Carl-Ernst Eilers
Horst Pachonik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19853530074 priority Critical patent/DE3530074A1/en
Publication of DE3530074A1 publication Critical patent/DE3530074A1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

In a process chamber (1) a single magnetron (2) is arranged on which there is positioned a target (3) which is subdivided according to the number and sequence of layers. The discharge zones (7) of the individual target regions (S1, S2, S3, S4) are separated from one another by screen systems (6), the process-gas infeed (8) being directly integrated into the screen systems (6). By a suitable choice of the screen windows (9) and variation of the process gas or process gas pressure in the individual chambers (7) and of the selection of the layers to be sputtered on, it is possible to sputter-coat a substrate (4) in a process chamber (1) with a variety of materials with defined layer thicknesses in any sequence required, or to sputter them on reactively byu a suitable choice of the process gas. <IMAGE>

Description

Die Erfindung betrifft eine Vorrichtung zum Herstellen mehrerer aufeinanderfolgender Schichten durch Hoch­ leistungs-Kathodenzerstäubung in einem evakuierten Prozeßraum, in dem entsprechende Targets, ein zu be­ stäubendes Substrat und eine Prozeßgaszuführung ange­ ordnet sind.The invention relates to a device for manufacturing several successive layers through high power cathode sputtering in an evacuated Process space in which corresponding targets, one to be dusting substrate and a process gas supply are arranged.

Das Aufbringen verschiedenster dünner Schichten, wie sie beispielsweise in der Bauelementetechnologie oder anderen Bereichen benötigt werden, geschieht häufig mit Hilfe des Hochleistungs-Kathodenzerstäubens (Sputterns). Mit einem Magnetron werden die verschiedensten Materialien (z. B. Metalle, Nitride, Oxide, . . .) in variabler Dicke und Zusammensetzung zu einzelnen Schichten oder Schichtsystemen aufgestäubt, bzw. durch reaktives Sputtern erzeugt.The application of various thin layers, like them for example in component technology or others Areas needed are often done with the help of High performance sputtering. With a Magnetron are a wide variety of materials (e.g. Metals, nitrides, oxides,. . .) in variable thickness and Composition into individual layers or layer systems dusted or generated by reactive sputtering.

Bisher wird zum Aufbringen einer dünnen Schicht mittels Hochleistungs-Sputterns ein Target (aufzustäubendes Ma­ terial) und die dazugehörende Magneteinrichtung sowie Halterung, Isolierung, Kühlung und Versorgungseinheit benötigt. Außerdem wird ein Vakuum mit Prozeßgas be­ stimmten Druckes verwendet. Sollen mehrere Schichten nacheinander auf ein Substrat gebracht werden, so sind ebensoviele Magnetrons wie aufzustäubende Schichten einzusetzen, wobei man oft mit einer einzigen Prozeß­ kammer nicht auskommt. So far, has been used to apply a thin layer High-performance sputtering is a target (Ma material) and the associated magnetic device as well Bracket, insulation, cooling and supply unit needed. In addition, a vacuum with process gas agreed pressure used. Should have multiple layers are placed on a substrate one after the other as many magnetrons as layers to be sputtered use, often using a single process chamber does not get along.  

Aufgabe der vorliegenden Erfindung ist es, eine Vor­ richtung zum Herstellen mehrer aufeinanderfolgender Schichten anzugeben, bei der die Schichten in einem Prozeßschritt in einem Prozeßraum mittels Hochleistungs- Kathodenzerstäubung hergestellt werden können.The object of the present invention is to provide a direction for producing several successive Specify layers where the layers are in one Process step in a process room using high performance Sputtering can be produced.

Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß die Vorrichtung ein einzelnes Magnetron besitzt auf dem ein entsprechend der Schichtzahl und -folge unter­ teiltes Target angeordnet ist, daß die Entladungszonen der einzelnen Targetbereiche durch Blendensysteme von­ einander getrennt sind, und daß die Prozeßgaszuführung in die Blendensysteme direkt integriert ist.This object is achieved in that the device has a single magnetron one according to the number and sequence of layers divided target is arranged that the discharge zones of the individual target areas by aperture systems from are separated from each other, and that the process gas supply is directly integrated into the panel systems.

Die Vorteile des Gegenstandes der Erfindung werden an­ hand eines in der Zeichnung dargestellten Ausführungs­ beispieles erläutert.The advantages of the subject matter of the invention will be apparent hand of an execution shown in the drawing example explained.

Ein Prozeßraum 1 kann durch geeignete Pumpen P evakuiert werden. Im Prozeßraum 1 ist ein Magnetron mit Magnet­ anordnung, Kühlung und Versorgungseinheit angeordnet. Das Target 3 ist entsprechend der gewünschten Schichtzahl und Schichtfolge in verschiedene Sputterbereiche S 1, S 2, S 3 und S 4 (variable aufzustäubende Materialien) unterteilt. Wenn das Substrat 4 in Pfeilrichtung nacheinander über die verschiedenen Targetabschnitte S 1 bis S 4 geführt wird, erhält man den gewünschten Schichtaufbau.A process room 1 can be evacuated by suitable pumps P. In process room 1 , a magnetron with magnet arrangement, cooling and supply unit is arranged. The target 3 is divided into different sputtering areas S 1 , S 2 , S 3 and S 4 (variable materials to be dusted) according to the desired number of layers and layer sequence. When the substrate 4 is guided in the arrow direction in succession on the various target portions S 1 to S 4, to obtain the desired layer structure.

Die Dunkelfeldabschirmung 5 wird in ein System von Blenden 6 und Kammern 7 (entsprechend der Targetunter­ teilung) erweitert. The dark field shield 5 is expanded into a system of diaphragms 6 and chambers 7 (according to the target subdivision).

Die einzelnen Kammern 7 entsprechen den Entladungszonen über den einzelnen Targetabschnitten S 1 bis S 4 und weisen entsprechend ausgestaltete Blendenfenster 9 auf.The individual chambers 7 correspond to the discharge zones above the individual target sections S 1 to S 4 and have correspondingly designed diaphragm windows 9 .

In das Blendensystem 6 ist die Prozeßgaszuführung 8 direkt integriert. Für die notwendige Regenerierung sind geeignete Öffnungen 10 in die Kammerwände einge­ lassen.The process gas supply 8 is directly integrated into the orifice system 6 . Suitable openings 10 are left in the chamber walls for the necessary regeneration.

Im Dauerbetrieb werden Kühlschlangen im Blendensystem 6 vorgesehen. Die Zusatzblenden müssen mit der Dunkel­ feldabschirmung 5 elektrisch leitend verbunden sein, wobei ihr Abstand vom Target 3 einige Milimeter betra­ gen muß um die Entladung nicht zu stören. Andererseits muß der Abstand der Blendensysteme 6 vom Target 3 aber klein genug sein, um noch eine sichere Trennung der von den verschiedenen Targetabschnitten S 1 bis S 4 abgesput­ terten Materialien zu gewährleisten.In continuous operation, cooling coils are provided in the aperture system 6 . The additional diaphragms must be electrically conductively connected to the dark field shield 5 , their distance from the target 3 having to be a few millimeters in order not to disturb the discharge. On the other hand, the distance of the aperture systems 6 from the target 3 must be small enough to ensure safe separation of the materials sputtered from the different target sections S 1 to S 4 .

Durch Variation der Größe der Blendenfenster 9 und des Prozeßgases bzw. Prozeßgasdruckes in den einzelnen Kammern 7 sowie Wahl der aufzusputternden Schichten las­ sen sich mit der Vorrichtung nach der Erfindung ver­ schiedene Materialien in beliebiger Reihenfolge mit de­ finierten Schichtdicken in einem einzigen Prozeßraum mit einem einzigen Magnetron aufstäuben bzw. durch Wahl des Prozeßgases reaktiv aufsputtern.By varying the size of the diaphragm window 9 and the process gas or process gas pressure in the individual chambers 7 and the choice of the layers to be sputtered, the device according to the invention enables different materials to be used in any order with defined layer thicknesses in a single process space with a single magnetron dusting or sputtering reactive by choice of the process gas.

Claims (1)

Vorrichtung zum Herstellen mehrerer aufeinanderfolgender Schichten durch Hochleistungs-Kathodenzerstäubung in einem evakuierten Prozeßraum, in dem entsprechende Tar­ gets, ein zu bestäubendes Substrat und eine Prozeßgas­ zuführung angeordnet sind, dadurch ge­ kennzeichnet, daß sie ein einzelnes Ma­ gnetron (2) besitzt auf dem ein entsprechend der Schicht­ zahl und -folge unterteiltes Target (3) angeordnet ist, daß die Entladungszonen (7) der einzelnen Targetberei­ che (S 1, S 2, S 3, S 4) durch Blendensysteme (6) voneinan­ der getrennt sind, und daß die Prozeßgaszuführung (8) in die Blendensysteme (6) direkt integriert ist.Device for producing several successive layers by high-performance sputtering in an evacuated process space, in which corresponding targets, a substrate to be dusted and a process gas supply are arranged, characterized in that it has a single magnet ( 2 ) on which a corresponding the layer number and sequence subdivided target ( 3 ) is arranged that the discharge zones ( 7 ) of the individual target areas ( S 1 , S 2 , S 3 , S 4 ) are separated from one another by aperture systems ( 6 ), and that the Process gas supply ( 8 ) is directly integrated into the orifice systems ( 6 ).
DE19853530074 1985-08-22 1985-08-22 Appliance for producing a plurality of successive layers by high-capacity cathode sputtering Ceased DE3530074A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19853530074 DE3530074A1 (en) 1985-08-22 1985-08-22 Appliance for producing a plurality of successive layers by high-capacity cathode sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853530074 DE3530074A1 (en) 1985-08-22 1985-08-22 Appliance for producing a plurality of successive layers by high-capacity cathode sputtering

Publications (1)

Publication Number Publication Date
DE3530074A1 true DE3530074A1 (en) 1987-02-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853530074 Ceased DE3530074A1 (en) 1985-08-22 1985-08-22 Appliance for producing a plurality of successive layers by high-capacity cathode sputtering

Country Status (1)

Country Link
DE (1) DE3530074A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0297235A1 (en) * 1987-06-29 1989-01-04 Leybold Aktiengesellschaft Apparatus for coating
EP0335526A2 (en) * 1988-03-31 1989-10-04 Wisconsin Alumni Research Foundation Magnetron with flux switching cathode and method of operation
CH685120A5 (en) * 1989-02-17 1995-03-31 Preci Coat Sa Method of depositing at least a thickness of at least one decorative material, a device for the implementation of this method and decorative object thus produced.
DE102005050358B4 (en) * 2004-11-12 2012-02-23 Oerlikon Trading Ag, Trübbach Vacuum treatment plant

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2307649A1 (en) * 1973-02-16 1974-08-29 Bosch Gmbh Robert ARRANGEMENT FOR ATOMIZING VARIOUS MATERIALS
DD148066A1 (en) * 1979-12-20 1981-05-06 Lothar Reissmueller ARRANGEMENT FOR LAYING UP OF MIXING LAYERS ON LEVEL SUBSTRATES

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2307649A1 (en) * 1973-02-16 1974-08-29 Bosch Gmbh Robert ARRANGEMENT FOR ATOMIZING VARIOUS MATERIALS
DD148066A1 (en) * 1979-12-20 1981-05-06 Lothar Reissmueller ARRANGEMENT FOR LAYING UP OF MIXING LAYERS ON LEVEL SUBSTRATES

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0297235A1 (en) * 1987-06-29 1989-01-04 Leybold Aktiengesellschaft Apparatus for coating
EP0335526A2 (en) * 1988-03-31 1989-10-04 Wisconsin Alumni Research Foundation Magnetron with flux switching cathode and method of operation
EP0335526A3 (en) * 1988-03-31 1991-05-02 Wisconsin Alumni Research Foundation Magnetron with flux switching cathode and method of operation
CH685120A5 (en) * 1989-02-17 1995-03-31 Preci Coat Sa Method of depositing at least a thickness of at least one decorative material, a device for the implementation of this method and decorative object thus produced.
DE102005050358B4 (en) * 2004-11-12 2012-02-23 Oerlikon Trading Ag, Trübbach Vacuum treatment plant

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