DE3479136D1 - Liquid phase epitaxy apparatus - Google Patents

Liquid phase epitaxy apparatus

Info

Publication number
DE3479136D1
DE3479136D1 DE8484200551T DE3479136T DE3479136D1 DE 3479136 D1 DE3479136 D1 DE 3479136D1 DE 8484200551 T DE8484200551 T DE 8484200551T DE 3479136 T DE3479136 T DE 3479136T DE 3479136 D1 DE3479136 D1 DE 3479136D1
Authority
DE
Germany
Prior art keywords
liquid phase
phase epitaxy
epitaxy apparatus
liquid
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484200551T
Other languages
German (de)
Inventor
John Chadwick Brice
John Lincoln Page
Peter Arthur Whiffin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Koninklijke Philips NV
Original Assignee
Philips Electronic and Associated Industries Ltd
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd, Philips Gloeilampenfabrieken NV filed Critical Philips Electronic and Associated Industries Ltd
Application granted granted Critical
Publication of DE3479136D1 publication Critical patent/DE3479136D1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8484200551T 1983-04-27 1984-04-18 Liquid phase epitaxy apparatus Expired DE3479136D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08311429A GB2138697A (en) 1983-04-27 1983-04-27 Liquid phase epitaxy apparatus

Publications (1)

Publication Number Publication Date
DE3479136D1 true DE3479136D1 (en) 1989-08-31

Family

ID=10541758

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484200551T Expired DE3479136D1 (en) 1983-04-27 1984-04-18 Liquid phase epitaxy apparatus

Country Status (8)

Country Link
US (1) US4535720A (en)
EP (1) EP0127210B1 (en)
JP (1) JPS59205715A (en)
AU (1) AU558382B2 (en)
CA (1) CA1229291A (en)
DE (1) DE3479136D1 (en)
GB (1) GB2138697A (en)
IL (1) IL71630A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291116A (en) * 1989-04-28 1990-11-30 Toshiba Corp Liquid phase epitaxial growth method
JPH042689A (en) * 1990-04-19 1992-01-07 Mitsubishi Electric Corp Method for hetero-epitaxial liquid phase growth
US5264190A (en) * 1990-04-19 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Liquid phase epitaxial film growth apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102780A (en) * 1972-04-10 1973-12-24
US3785884A (en) * 1972-07-21 1974-01-15 Rca Corp Method for depositing a semiconductor material on the substrate from the liquid phase
US3890194A (en) * 1974-04-11 1975-06-17 Rca Corp Method for depositing on a substrate a plurality of epitaxial layers in succession
JPS5331467A (en) * 1976-09-02 1978-03-24 Jujo Paper Co Ltd Builddup handcase
US4359012A (en) * 1978-01-19 1982-11-16 Handotai Kenkyu Shinkokai Apparatus for producing a semiconductor device utlizing successive liquid growth
JPS55140225A (en) * 1979-04-20 1980-11-01 Agency Of Ind Science & Technol Method and device for sliding-boat-type liquid-phase epitaxial growth
JPS561528A (en) * 1979-06-18 1981-01-09 Toshiba Corp Manufacture of epitaxial wafer of 3-5 group compound semiconductor
JPS56111214A (en) * 1980-02-07 1981-09-02 Nippon Telegr & Teleph Corp <Ntt> Carbon slider boat apparatus for liquid phase epitaxial growth
FR2476690A1 (en) * 1980-02-27 1981-08-28 Radiotechnique Compelec NACELLE USABLE FOR LIQUID PHASE EPITAXIC DEPOSITS AND METHOD OF DEPOSITION INVOLVING SAID NACELLE
JPS5826099A (en) * 1981-08-08 1983-02-16 Fujitsu Ltd Liquid phase epitaxial growing method and boat for growth

Also Published As

Publication number Publication date
US4535720A (en) 1985-08-20
EP0127210A3 (en) 1986-10-08
AU2717784A (en) 1984-11-01
CA1229291A (en) 1987-11-17
IL71630A0 (en) 1984-07-31
EP0127210A2 (en) 1984-12-05
GB2138697A (en) 1984-10-31
EP0127210B1 (en) 1989-07-26
JPS59205715A (en) 1984-11-21
GB8311429D0 (en) 1983-06-02
AU558382B2 (en) 1987-01-29
IL71630A (en) 1987-12-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee