DE3363961D1 - Memory device incorporating an amorphous or microcrystalline alloy - Google Patents

Memory device incorporating an amorphous or microcrystalline alloy

Info

Publication number
DE3363961D1
DE3363961D1 DE8383307023T DE3363961T DE3363961D1 DE 3363961 D1 DE3363961 D1 DE 3363961D1 DE 8383307023 T DE8383307023 T DE 8383307023T DE 3363961 T DE3363961 T DE 3363961T DE 3363961 D1 DE3363961 D1 DE 3363961D1
Authority
DE
Germany
Prior art keywords
amorphous
memory device
device incorporating
microcrystalline alloy
microcrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383307023T
Other languages
English (en)
Inventor
Peter John Hockley
Michael John Thwaites
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BP PLC
Original Assignee
BP PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BP PLC filed Critical BP PLC
Application granted granted Critical
Publication of DE3363961D1 publication Critical patent/DE3363961D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE8383307023T 1982-11-26 1983-11-17 Memory device incorporating an amorphous or microcrystalline alloy Expired DE3363961D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8233764 1982-11-26

Publications (1)

Publication Number Publication Date
DE3363961D1 true DE3363961D1 (en) 1986-07-10

Family

ID=10534549

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383307023T Expired DE3363961D1 (en) 1982-11-26 1983-11-17 Memory device incorporating an amorphous or microcrystalline alloy

Country Status (4)

Country Link
US (1) US4665504A (de)
EP (1) EP0115124B1 (de)
JP (1) JPS59105373A (de)
DE (1) DE3363961D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188578A (ja) * 1984-10-08 1986-05-06 Nec Corp 非線形素子
GB8816632D0 (en) * 1988-07-13 1988-08-17 Raychem Ltd Electrical device
GB8910854D0 (en) * 1989-05-11 1989-06-28 British Petroleum Co Plc Semiconductor device
US5341328A (en) * 1991-01-18 1994-08-23 Energy Conversion Devices, Inc. Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
US5323377A (en) * 1992-11-27 1994-06-21 Chen Zhi Q Electrical data recording and retrieval based on impedance variation
US20080072953A1 (en) * 2006-09-27 2008-03-27 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact device
US20080295882A1 (en) * 2007-05-31 2008-12-04 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
US20100282314A1 (en) * 2009-05-06 2010-11-11 Thinsilicion Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
KR101245037B1 (ko) * 2009-06-10 2013-03-18 씬실리콘 코포레이션 반도체 다층 스택을 구비한 광전지 모듈 및 광전지 모듈의 제작 방법
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600645A (en) * 1969-06-11 1971-08-17 Westinghouse Electric Corp Silicon carbide semiconductor device
FR2095305B1 (de) * 1970-06-17 1976-03-19 Ibm
US3740620A (en) * 1971-06-22 1973-06-19 Ibm Storage system having heterojunction-homojunction devices
US4103312A (en) * 1977-06-09 1978-07-25 International Business Machines Corporation Semiconductor memory devices
US4199692A (en) * 1978-05-16 1980-04-22 Harris Corporation Amorphous non-volatile ram
US4254429A (en) * 1978-07-08 1981-03-03 Shunpei Yamazaki Hetero junction semiconductor device
US4459163A (en) * 1981-03-11 1984-07-10 Chronar Corporation Amorphous semiconductor method

Also Published As

Publication number Publication date
JPS59105373A (ja) 1984-06-18
EP0115124B1 (de) 1986-06-04
US4665504A (en) 1987-05-12
EP0115124A1 (de) 1984-08-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee