DE3327186C1 - Microwave amplifier using planar circuit technology with a field-effect transistor - Google Patents

Microwave amplifier using planar circuit technology with a field-effect transistor

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Publication number
DE3327186C1
DE3327186C1 DE3327186A DE3327186A DE3327186C1 DE 3327186 C1 DE3327186 C1 DE 3327186C1 DE 3327186 A DE3327186 A DE 3327186A DE 3327186 A DE3327186 A DE 3327186A DE 3327186 C1 DE3327186 C1 DE 3327186C1
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Prior art keywords
fet
line
metal carrier
microwave amplifier
amplifier
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DE3327186A
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German (de)
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Rainer Dr.-Ing. 7151 Burgstetten Geißler
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Bosch Telecom GmbH
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ANT Nachrichtentechnik GmbH
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Priority to DE3327186A priority Critical patent/DE3327186C1/en
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Publication of DE3327186C1 publication Critical patent/DE3327186C1/en
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Abstract

In order to reduce its tendency to oscillate, a microwave amplifier using planar circuit technology with a FET has a feedback line (12) between the gate electrode (G) and the source electrode (S) which is so long that for the useful frequency range it transforms a no-load operation to the gate electrode (G), the signals below the useful frequency range passing to earth via the feedback line provided with a damping resistor (14) (Fig. 1). <IMAGE>

Description

Eingangsleitung 9 eine Leitung 12 abzweigt, welche eine Rückkopplung zwischen der Gate- und der massekontaktierten Sourceelektrode des FET herstellt. Die Rückkopplungsleitung 12 ist mit einer leerlaufenden Stichleitung 13 versehen, und beide Leitungen sind so lang gewählt, daß sie für Frequenzen des Nutzbandes (hier im 18-26,5GHz-Band) einen Leerlauf an die Gateelektrode transformieren. Signale mit Frequenzen unterhalb des Nutzbandes gelangen über die Rückkopplungsleitung 12, welche mit einem Dämpfungswiderstand (8 Q-Dünnschichtwiderstand) 14 bestückt ist, an Masse.Input line 9 branches off a line 12, which provides a feedback between the gate and the grounded source electrode of the FET. The feedback line 12 is with an idle stub 13 provided, and both lines are chosen so long that they are suitable for frequencies of the Usable band (here in the 18-26.5 GHz band) transform an open circuit to the gate electrode. Signals with frequencies below the useful band pass through the feedback line 12, which is equipped with a damping resistor (8 Ω thin-film resistor) 14 is, in mass.

Dabei führen für die Signale mit Frequenzen unterhalb des Nutzbandes zwei parallele Wege vom Ende der Rückkopplungsleitung 12 zur Masse, was sich für die Schwingungsbedämpfung des Verstärkers als sehr vorteilhaft erwiesen hat. Zu diesem Zweck ist mit dem Metallträger über Bonddrähte 15 eine am Ende kurzgeschlossene, für die Betriebsfrequenz des FET ca.This leads to the signals with frequencies below the useful band two parallel paths from the end of the feedback line 12 to ground, which is for the vibration damping of the amplifier has proven to be very beneficial. to For this purpose, a short-circuited at the end with the metal carrier via bonding wires 15, for the operating frequency of the FET approx.

lange Leitung 16 verbunden. In diese Leitung 16 mündet die Rückkopplungsleitung 12, so daß der eine Weg zur Masse über die Leitung 16 zum Metallträger 2 und der dazu parallele Weg zu Masse über das mit der Massefläehe des Substrats kurzgeschlossene Ende der Leitung 16 führt.long line 16 connected. The feedback line opens into this line 16 12, so that one way to the ground via line 16 to the metal carrier 2 and the parallel path to ground via the short-circuited to the ground plane of the substrate End of line 16 leads.

Über die Rückkopplungsleitung 12 kann gleichzeitig auch die Gleichstromzuführung für die Gateelektrode G des FET erfolgen. Hierfür ist eine an die Rückkopplungsleitung 12 angeschlossene Leitung 17 vorgesehen. At the same time, the direct current supply can also be supplied via the feedback line 12 for the gate electrode G of the FET. For this there is one on the feedback line 12 connected line 17 is provided.

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Claims (3)

Patentansprüche: 1. Mikrowellenverstärker in planarer Leitungstechnik mit einem Feldeffekttransistor, der, auf einem Metallträger angeordnet, in ein Substrat so eingesetzt ist, daß seine Elektrodenanschlüsse auf gleichem Niveau wie die Leiterbahnen auf dem Substrat liegen, wobei die Gateelektrode mit einer Leitung für das Eingangssignal, die Drainelektrode mit einer Leitung für das Ausgangssignal und die Sourceelektrode mit dem auf Massepotential liegenden Metallträger kontaktiert ist, dadurch gekennzeichnet, daß zwischen der Gateelektrode (G) und der Sourceelektrode (S) eine Rückkopplungsleitung (12) vorhanden ist, welche so lang ist, daß sie für das Nutzfrequenzband einen Leerlauf an die Gateelektrode (G) transformiert und daß die Signale unterhalb des Nutzfrequenzbandes über die mit einem Dämpfungswiderstand (14) versehene Rückkopp lungsleitung an Masse gelangen. Claims: 1. Microwave amplifier in planar line technology with a field effect transistor, which, arranged on a metal carrier, in a substrate is inserted so that its electrode connections are at the same level as the conductor tracks lie on the substrate, the gate electrode being connected to a line for the input signal, the drain electrode with a line for the output signal and the source electrode is contacted with the metal carrier lying at ground potential, characterized in that that between the gate electrode (G) and the source electrode (S) a feedback line (12) is present, which is so long that it is an idle for the useful frequency band transformed to the gate electrode (G) and that the signals are below the useful frequency band via the feedback line provided with a damping resistor (14) to ground reach. 2. Mikrowellenverstärker nach Anspruch 1, dadurch gekennzeichnet, daß die Rückkopplungsleitung (12) mit einer an den auf Masse liegenden Metallträger (2) angeschlossenen Leitung (16) verbunden ist, die an ihrem dem Metallträger abgewandten Ende kurzgeschlossen ist. 2. Microwave amplifier according to claim 1, characterized in that that the feedback line (12) with one to the grounded metal support (2) connected line (16) is connected, facing away from the metal carrier on its End is short-circuited. 3. Mikrowellenverstärker nach Anspruch2, dadurch gekennzeichnet, daß die kurzgeschlossene Leitung (16) für die Betriebsfrequenz des Feldeffekttransistors ca. 2 /2 lang ist 4. Mikrowellenverstärker nach Anspruch 1, dadurch gekennzeichnet, daß die Gleichstromzufüh rung für das Gate (G) des Feldeffekttransistors über die Rückkopplungsleitung (12) erfolgt. 3. Microwave amplifier according to claim 2, characterized in that that the short-circuited line (16) for the operating frequency of the field effect transistor 4. Microwave amplifier according to claim 1, characterized in that that the Gleichstromzufüh tion for the gate (G) of the field effect transistor on the Feedback line (12) takes place. Die vorliegende Erfindung betrifft einen Mikrowellenverstärker in planarer Leitungstechnik mit einem Feldeffekttransistor, der auf einem Metall angeordnet, in ein Substrat so eingesetzt ist, daß seine Elektrodenanschlüsse auf gleichem Niveau wie die Leiterbahnen auf dem Substrat liegen, wobei die Gateelektrode mit einer Leitung für das Eingangssignal, die Drainelektrode mit einer Leitung für das Ausgangssignal und die Sourceelektrode mit dem auf Massepotential liegenden Metallträger kontaktiert ist. The present invention relates to a microwave amplifier in planar line technology with a field effect transistor, which is arranged on a metal, is inserted into a substrate so that its electrode connections are at the same level how the conductor tracks are on the substrate, the gate electrode with a Line for the input signal, the drain electrode with a line for the output signal and the source electrode is contacted with the metal carrier which is at ground potential is. Ein derartiger Mikrowellenverstärker ist aus der DE-PS 24 24 107 bekannt Der Einsatz des Feldeffekttransistors (künftig nur als FET bezeichnet) auf einem Metallträger in dem Substrat der planaren Schaltung hat zur Folge, daß wegen der Niveaugleichheit der Leiterbahnen und der FET-Elektroden nur sehr kurze Anschlußleitungen zwischen dem FET und den Leiterbahnen erforderlich sind, und daß eine direkte Masseverbindung vorliegt, was sich günstig auf die Verringerung parasitärer Blindwiderstandskomponenten auswirkt. Such a microwave amplifier is from DE-PS 24 24 107 known The use of the field effect transistor (in the future only referred to as FET) a metal support in the substrate of the planar circuit has the consequence that because of the level of the conductor tracks and the FET electrodes only very short connecting lines between the FET and the conductive lines are required, and that a direct ground connection present, which is beneficial in reducing parasitic reactance components affects. Mikrowellenverstärker mit einem FET als Verstärkerelement neigen sehr stark dazu zu schwingen, wenn man nicht geeignete Maßnahmen dagegen ergreift. Die Schwingneigung ließe sich z. B. dadurch unterdrücken, daß man die an die Gate- und/oder an die Drainelektrode angeschlossenen Leitungen mit Dämpfungswiderständen versieht. Dämpfungswiderstände in den Eingangs- und Ausgangsleitungen haben aber den großen Nachteil, daß der Verstärkergewinn sehr stark reduziert und die Rauschzahl des Verstärkers vergrößert wird. Es wäre besonders vorteilhaft, das Gehäuse, in dem der planare Mikrowellenverstärker untergebracht ist, mit Hohlleiter-Streifenleiterübergängen zu versehen, weil gerade hiermit die geringsten Dämpfungsverluste auf der Eingangs- und Ausgangsleitung des FET erreichbar sind. Es müssen also andere als die eben erwähnten Maßnahmen ergriffen werden, um die Schwingneigung des FET-Mikrowellenverstärkers zu reduzieren. Microwave amplifiers tend to use an FET as the amplifier element to vibrate very strongly if one does not take appropriate measures against it. The tendency to oscillate could be z. B. suppressed by the fact that the gate and / or lines connected to the drain electrode with damping resistors provides. But have damping resistances in the input and output lines the great disadvantage that the amplifier gain is very much reduced and the noise figure of the amplifier is enlarged. It would be particularly advantageous to have the housing in which houses the planar microwave amplifier, with waveguide-stripline transitions to be provided, because it is precisely this that results in the lowest attenuation losses on the input and output line of the FET are accessible. So there have to be others than that Measures mentioned are taken to reduce the tendency of the FET microwave amplifier to oscillate to reduce. Der Erfindung liegt daher die Aufgabe zugrunde, einen Mikrowellenverstärker der eingangs genannten Art anzugeben, dessen Schwingneigung durch Mittel unterdrückt wird, die keine Verminderung des Verstärkergewinns und keine Rauschzahlerhöhung zur Folge haben. The invention is therefore based on the object of a microwave amplifier of the type mentioned at the outset, whose tendency to oscillate is suppressed by means that does not reduce the gain of the amplifier and does not increase the noise figure have as a consequence. Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß zwischen der Gateelektrode und der Sourceelektrode eine Rückkopplungsleitung vorhanden ist, welche so lang ist, daß sie für das Nutzfrequenzband einen Leerlauf an die Gateelektrode transformiert und daß die Signale unterhalb des Nutzfrequenzbandes über die mit einem Dämpfungswiderstand versehene Rückkopplungsleitung an Masse gelangen. This object is achieved in that between the Gate electrode and the source electrode is a feedback line, which is so long that it has an open circuit to the gate electrode for the useful frequency band transformed and that the signals below the useful frequency band over the with a feedback line provided with a damping resistor come to ground. Zweckmäßige Ausführungen der Erfindung gehen aus den Unteransprüchen hervor. Appropriate embodiments of the invention are based on the subclaims emerged. Anhand eines in der Zeichnung dargestellten Ausführungsbeispiels wird nun die Erfindung näher erläutert Es zeigt F i g. 1 die Draufsicht auf einen Mikrowellenverstärker in planarer Leitungstechnik und Fig. 2 den Querschnitt durch einen den FET aufnehmenden Metallträger, der in das Substrat des planaren Mikrowellenverstärkers eingesetzt ist. Using an exemplary embodiment shown in the drawing the invention will now be explained in more detail. It shows FIG. 1 the top view of a Microwave amplifier in planar line technology and FIG. 2 shows the cross section through a metal carrier receiving the FET, which is inserted into the substrate of the planar microwave amplifier is used. Der in Fig. 1 dargestellte in planarer Leitungstechnik ausgeführte Mikrowellenverstärker weist als Verstärkerbauelement einen FET auf. Der FET-Chip 1 ist in einer in einem Metallträger 2 eingefrästen Vertiefung 3 angeordnet, wie der in F i g. 2 gezeigte Schnitt durch den Metallträger 2 verdeutlicht. Die Vertiefung ist so gewählt, daß die Oberseite des FET-Chip auf gleicher Höhe liegt wie die Oberflächen der Stege 4, 5 des Metallträgers neben der Vertiefung 3. Der Metallträger wird in eine Öffnung des Substrats 6 eingesetzt und an der Unterseite mit der Massefläche des Substrats z. B. The one shown in Fig. 1 executed in planar line technology The microwave amplifier has an FET as the amplifier component. The FET chip 1 is arranged in a recess 3 milled into a metal carrier 2, such as the in F i g. 2 illustrates the section through the metal carrier 2. The deepening is chosen so that the top of the FET chip is level with the surfaces of the webs 4, 5 of the metal carrier next to the recess 3. The metal carrier is in an opening of the substrate 6 is inserted and at the bottom with the ground plane of the substrate z. B. durch Löten galvanisch verbunden.galvanically connected by soldering. Die Kontaktierung der Sourceelektrode S des FET mit Masse erfolgt auf kürzestem Wege mittels Bonddrähten 7, die auf den Stegen 4 und 5 des Metallträgers 2 aufgebondet werden. Im vorliegenden Ausführungsbeispiel führen vier Bonddrähte 7 von der Sourceelektrode zu den Stegen des Metallträgers, da durch die Vielzahl der Bonddrähte die Induktivität der Masseverbindung verkleinert wird, wozu auch die Großflächigkeit des Metallträgers beiträgt. The source electrode S of the FET is contacted with ground in the shortest possible way by means of bonding wires 7, which are on the webs 4 and 5 of the metal carrier 2 are bonded. In the present exemplary embodiment, four bonding wires lead 7 from the source electrode to the webs of the metal carrier, because of the multitude the bond wires the inductance of the ground connection is reduced, including the large area of the metal support contributes. Die Gateelektrode G ist über die Bonddrähte 8 mit einer Leiterbahn 9 für das Eingangssignal und die Drainelektrode D über Bonddrähte 10 mit einer Leiterbahn 11 für das Ausgangssignal kontaktiert Damit die Bonddrähte möglichst kurz gehalten werden können, um somit parasitäre Blindwiderstandskomponenten in der Schaltung zu vermindern, liegen die Oberflächen der Leiterbahnen, der Stege des Metallträgers und des FET-Chips auf gleichem Niveau (vgl. F i g. 2). The gate electrode G is connected to a conductor path via the bonding wires 8 9 for the input signal and the drain electrode D via bonding wires 10 with a conductor track 11 contacted for the output signal So that the bond wires are kept as short as possible can thus be parasitic reactance components in the circuit to reduce, lie the surfaces of the conductor tracks, the webs of the metal carrier and the FET chip at the same level (see FIG. 2). Nachfolgend werden Schaltungsmaßnahmen zur Untcrdrückung der Schwingncigung des Verstärkers bcschieben. Der I i g. 1 ist zu entnehmen, daß von blei. Circuit measures for suppressing the oscillation are described below of the amplifier. The I i g. 1 it can be seen that from lead.
DE3327186A 1983-07-28 1983-07-28 Microwave amplifier using planar circuit technology with a field-effect transistor Expired DE3327186C1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0265833A1 (en) * 1986-10-22 1988-05-04 Siemens Aktiengesellschaft Semiconductor component having at least one power MOSFET

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0265833A1 (en) * 1986-10-22 1988-05-04 Siemens Aktiengesellschaft Semiconductor component having at least one power MOSFET

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