DE3321648A1 - Photoreceptor - Google Patents

Abstract

Photoreceptor having a 5 to 40 mu m thick photosensitive layer with an amorphous silicon base on a substrate which has been treated to achieve a surface roughness of 0.05 to 1.5 mu m S.

Description

Applicant: Konishiroku Photo Industry Co., Ltd.

No. 26-2 Nishishinjuku 1-chome Shinjuku-ku

Tokyo / Japan

Photoreceptor

The invention relates to a new photoreceptor, them particularly relates to a new electrophotographic

Photoreceptor.
15th

As the electrophotographic photoreceptor, for example, an undoped selenium photoreceptor, one with arsenic, Tellurium, antimony or the like doped selenium photoreceptor and a photoreceptor with in a binder resin dispersed zinc oxide or cadmium sulfide are already known. However, these photoreceptors occur Problems related to environmental pollution, thermal instability and insufficient mechanical Firmness on. On the one hand, there is already an electrophotographic photoreceptor in recent years based on amorphous silicon (hereinafter referred to as "a-Si" for short) has been proposed. The a-Si shows so-called free or dangling bonds, in which the Si-Si bond has broken, and at these types of defects generally create many localized energy levels in the energy band. That's why If there is a jump-over conduction of thermally excited charge carriers, which lowers the dark resistance, while at the same time charge carriers excited by light are captured by the localized energy levels, resulting in poor photoconductivity. It is therefore common practice to identify these defects through hydrogen atoms to compensate, namely by binding water

atoms to silicon atoms to create the dangling bonds (dangling bonds) to fill up.

The above-described hydrogenated amorphous silicon (hereinafter referred to as "a-Si: H" for short) has

8 has a resistivity of 10 to in the dark

Ohm χ cm on, i.e. only about 1/10 000 of the

Value for this parameter in the case of amorphous selenium itself. Therefore, in a photoreceptor that has a single A-Si: H layer has the problem that the dark decay of its surface potential in a high Rate occurs and that its initial charging potential is low. On the other hand, this material has the very that is advantageous property for use as a photosensitive layer of a photoreceptor resistivity decreases significantly when exposed to a beam of visible or infrared light will.

One possible method of increasing the resistance of such a-Si: H to the potential on its surface to retain is to dope the a-Si: H coating with impurities so heavily that it is more intrinsic Nature will apply, or a sandwich structure in which, for example, a layer of hydrogenated amorphous silicon carbide (hereinafter referred to as "a-SiC: H"), an a-Si: H layer, and a surface modification layer are applied to a substrate one after the other in this order. It was, however found that even in this case the above problems are not completely eliminated and that furthermore, even when used in the ordinary electrophotographic process, the resulting photoreceptor tends to develop fine white spots in the copy image

35 result.

The authors of the present invention have now found

> O 1 "

that one of the main factors involved in these problems is surface condition (particularly is the surface roughness) of the substrate to which the a-Si: H layer and the like are applied. In particular namely, when an a-Si type photoreceptor using the glow discharge decomposition method is produced, the surface of the previously used substrate is so rough (for example, it has a Roughness of 2 μπιε) that the a-Si: H layer applied to it is adversely affected so that there is a risk that they may be many in their microstructure Has defects. The fact that, unlike the Se type photoreceptor, the a-Si type photoreceptor is thin and in particular not made thicker than 40 μΐη, also contributes to the above difficulty. As a result, there arises the disadvantage that the retention of the potential on an a-Si type photoreceptor remains low and dark decay quickly occurs.

In order to avoid the above-mentioned disadvantage, was already proposed to arrange a charge blocking layer under the a-Si: H layer. Because they are even thinner however, this blocking layer also tends to have defects in its microstructure as stated above have so that it is influenced too much by the surface roughness of the substrate to be affected by any to be practical value.

It is therefore an object of the present invention to provide a photoreceptor with a thin photoconductive layer based on a-Si, in which the influence of the surface condition of the substrate is substantially reduced to improve the image quality, and at the same time a charge blocking layer can be satisfactorily generated to suppress the electrostatic To improve properties of the photoreceptor.

- / - / to

Another object of the invention is to provide a photoreceptor, in particular to find one with a photosensitive layer based on a-Si, the so is designed that the charge blocking effect is complete can be brought to bear to reduce the dark decay, to increase the sensitivity, to increase the charging potential, to further improve the adhesion of the coating to the substrate surface and the like

The subject of the present invention

A photoreceptor is characterized by having an a-Si based photosensitive layer having a thickness between 5 and 40 µm on a substrate whose ! 5 surface to a roughness of 0.05 to 1.5 µm S (Difference between the maximum and minimum heights, measured along the standard length of 2 5 mm) smoothed or has been treated {finished).

Further features and advantages of the invention emerge from the following description in conjunction with the enclosed Drawings. Show it*.

1 to 3 are sectional views showing three examples of the photoreceptor of the present invention;

FIGS. 4 and 5 are schematic representations of a grinding device;

Figure 6 is a longitudinal sectional view of a substrate grindstone assembly;

7 shows a schematic sectional view of a glow discharge device;

8, 9 and 10 are sectional views of further three examples a photoreceptor according to the invention;

Fig. 11 is a graph showing the electrostatic inherent OC shafts of the photoreceptor are plotted against the thickness of the oxide layer;

12, 13 and 14 a sectional view of further three examples of a photoreceptor according to the invention

«Β Ö

β * O

1Ί β

1 goal; and

Figures 15, 16 and 17 are sectional views of still further ones

three examples of a photoreceptor according to the invention *
5

It has now been found for the first time that the above-mentioned problems of the a-Si type photoreceptor can be solved in principle by limiting the surface roughness of the substrate to the specific range given above. If the surface of the substrate has a surface roughness of more than 1.5 μm and is thus just as rough as the substrate according to the prior art, frequent injection of charges from the substrate occurs, which leads to the formation of white spots on the copy image and the dark decay noticeably facilitated. On the other hand, a surface roughness of the substrate of less than 0.0 μΐη3 is a mirror surface to which a coating does not adhere well. It is therefore essential to limit the surface roughness of the substrate to a value within the range from 0.05 to 1.5 μm, preferably from 0.1 to 1.2 μm. This range of surface roughness has never been considered in connection with known photoreceptors, so that it was discovered for the first time by the present inventors as a result of extensive investigations. In addition, the selection of the surface roughness of the substrate in such a range is very effective for the production of a thin a-Si based photosensitive layer, particularly one having a thickness of 5 to 40 µm. An a-Si based photosensitive layer which is too thin so as not to tend to have adverse effects on the surface roughness of the substrate can be produced in a good coated state and with a satisfactorily high retention of the charge potential by selecting the surface roughness of the substrate within of the above-mentioned area.

The effects achieved thereby, the suppression of the dark decay, the prevention of the formation of white Spots and the like are particularly evident when a charge blocking layer is adjacent to the surface of the substrate is arranged. This layer, which is intended to serve as the injection of holes or To prevent electrons from the substrate and thereby add the given charging potential on the surface retained is made by selecting the surface roughness of the substrate within the above range in such an advantageous state on the surface of the substrate that they perform their blocking function can exercise fully. The above blocking layer has a thickness within the range of 50 8 to 1 µm, preferably from 400 8 to 5000 8. One Blocking layer that is thinner than 50 8 is too thin to be effective, while one that is thicker is than 1 μπι, too thick so that it has a retention of the Residual potential. The blocking layer is preferably made of an insulating material or from a semiconductor based on amorphous silicon, which with a high concentration of one or more Elements of group IIIA or VA of the Periodic Table of the Elements is doped. In addition to the suppression of the Dark decay, the reduction in the formation of white spots and an increase in the charge potential the above-mentioned blocking layer increases the sensitivity of the photoreceptor, enables manufacture a thinner photoreceptor coating and improves the adhesion of the coating to the substrate.

In addition , a photosensitive layer based on amorphous silicon, which is converted into an intrinsic state, and a surface modification layer are preferably applied to this charge blocking layer. Preferably, a charge transport layer made of hydrogenated and / or fluorinated amorphous silicon carbide or hydrogenated and / or fluorinated

amorphous silicon nitride as well as a photosensitive Amorphous silicon based layer and a surface modification layer applied to it.

According to the invention, a metal or an alloy can be used as the material for the substrate. The specified surface roughness can be achieved using one of the three working methods described below:
10

a) Treatment with a grindstone in contact with the cylindrical circumferential surface of the substrate, wherein the former is advanced in a prescribed direction along the cylindrical axis of the latter is, both of which rotate in order to smooth or treat the cylindrical circumferential surface (hereinafter referred to as "SM method"; see Japanese Patent Publication 150 755/1981, 150 754/1981 and Japanese Patent Application

20 25635/1981);

b) Treatment with a grindstone, which by proportionately low forces are pressed against the surface of the substrate, the former in low vibrations and at the same time is moved forward in a prescribed direction to the To smooth or treat surface (hereinafter referred to as "SF process";. See, for example, the Japanese Offenlegungsschrift 13 424/1978);

c) treatment of the substrate by blowing abrasive materials, to sand and smooth its surface (for example, by liquid sanding or honing; See, for example, a method as described in the Japanese laid-open specification 58 954/1976 is) .

It should be noted that a different method than the above, for example an electrolytic Polishing process for smoothing or treating the surface of the substrate to achieve a roughness inside of the range given above can be used

The following are examples of photoreceptors of the present invention explained in more detail with reference to the accompanying drawings.

In Fig. 1 is an a-Si based photosensitive layer 2 and in particular one made of a-Si: H with a thickness of 5 to 40 μm on a substrate 1 made of aluminum or another metal or alloy, it being essential to pre-cover the surface of the substrate 1 using a grinding device as described below, except for a roughness from 0.05 to 1.5 µm to smooth (treat) S.

Fig. 2 shows a photoreceptor constructed so that a charge blocking layer 3 having a thickness of 50 8 to 1 µm under an a-Si based photosensitive layer 2 and adjacent to the surface of the substrate 1 which is except for surface roughness has been smoothed (treated) as indicated above, is arranged. This blocking layer 3 can be made of an insulating material such as Al ₃ O ₃ , SiO ₂ or SiO ₁ or of an a-Si-based material of the p-type and further of the p + -type or η-type and further of the n + - Type doped with a high concentration of an element from Group IIIA or VA of the Periodic Table of the Elements. Such a-Si-based blocking layer doped by impurities can be formed by the same method as the overlying a-Si-based photosensitive layer, particularly using the glow discharge decomposition method, which facilitates the manufacture of a photoreceptor. If boron or any other element of the

Group ΙΙΙΑ of the Periodic Table of the Elements is used as an impurity for doping and reactant gases that are used for glow discharge decomposition are added, for example with a flow ratio _{B 2 HgZSiH 4} = 100 to 100,000 ppm, preferably 1000 to 10,000 ppm, For example, a p- and also p + -type blocking layer can be formed which is ideal for preventing the injection of electrons from the substrate when the photoreceptor is used by positively charging its surface. On the other hand, when phosphorus or another element of group VA of the Periodic Table of the Elements is used as an impurity for doping and reactant gases used for glow discharge decomposition, for example, in a flow ratio of pH. / SiH ₄ = 100 to 10,000 ppm can be used, an n ~-type and further n + -type blocking layer capable of preventing the injection of holes from the substrate when the photoreceptor is used by one charges one's surface negatively.

From Fig. 2 it can also be seen that the photosensitive Liche layer based on a-Si, applied to the above-mentioned blocking layer 3, which is doped with impurities, with boron or another element of Group IIIA of the Periodic Table of the Elements {flow ratio during glow discharge decomposition: B ₂ HgZSiH ₄ = 10 to 500 ppm) can be doped up to such a concentration that the layer is converted into an intrinsic state.

When a charge transport layer 4 made of a material based on a-Si and in particular made of a-SiC: H or a-SiN: H in a thickness of 5000 Å * to 35 μΐη between the photosensitive Layer on a-Si base 2 and that due to impurities doped blocking layer 3, as explained in Fig. 3, is arranged, the retention of the

Surface potential is improved, resulting in a photoreceptor with a high sensitivity and a lower one Residual potential leads.

Referring to Figs. 4 to 6, the following are the grinding methods by which the surface of the substrate 1 is treated or smoothed to a roughness of 0.05 to 1.5 .mu.m for use in the manufacture of the above photoreceptor is described in more detail.

4 shows a grinding device as described in Japanese Patent Application Laid-Open No. 150 755/1981 and the like is. An untreated (unsmoothed) substrate 1 in the form of a hollow or filled (massive) The cylinder is driven on its central axis X, which is oriented horizontally, for example. With the Circumferential surface of this untreated substrate 1 is the end face of a grindstone 12, which is driven about its axis of rotation Y, which is at an angle of 0 to 45 ° with respect to the plane perpendicular to the above-mentioned central axis X is inclined / brought into contact. aside from that this grindstone 12 is moved forward in the direction of the central axis X. The surface of the above Substrate 1 is ground and smoothed (treated) in this way for use as a substrate of a electrophotographic photoreceptor. The axis of rotation Y of the grindstone 12 does not always need the central axis X to cut. The former can also be far from the latter pass as explained in FIG.

In the case of the explained grinding device, a grindstone 12 is on one end of a freely pivotable rod 15 attached near its central position by a support 14, for example by a horizontal Support point 13, is rotatably mounted. The other side of the rod 15 is, for example, with one on his End fixed counterweight 16 and a contact pressure

«Ο β

Adjustment weight 17 is provided, which moves along the longitudinal direction of the rod 15 to the required extent can be. The contact pressure between the grindstone 12 and the untreated substrate 1 can be adjusted by suitable Selecting the weight of the counterweight 16 and adjusting the position of the contact pressure setting weight 17 can be set. The grindstone 12 can be moved forward in the direction of the central axis X, for example by placing the above carrier 14 with the support point 13 on a guide device, such as a rail, moves. In addition, the above-mentioned grindstone 12 is driven by a motor or the like. which also serves as a counterweight 16.

The manner in which the surface of the substrate is ground by the grindstone is given below With reference to FIG. 6 described in more detail.

The grindstone 12 is preferably arranged in such a direction that its axis of rotation Y is at an angle Θ up to 45 ° from the plane perpendicular to the central axis X of the substrate 1 is inclined. Using such a grinding process can result in an imbalance the load between both sides of the axis Y in the figure can be avoided and the grindstone can thereby work in a stable manner free from vibrations, which in the event of such an imbalance of load may occur.

The attachment of the grindstone, as explained in FIG. 6, namely the inclination of the axis of rotation of the grindstone in the specified longitudinal sectional view, is used

preferably the stability of the grindstone during grinding. As mentioned above, the Winkel® be chosen so that it can vary up to 45 °.

A grinding device of this type is for example in Japanese Examined Patent Publication No. 46315/1976 and one of its typical embodiments

is the "Cylinder Grinding Mirror Finisher" as it is supplied by Sanko Machinery Co., Ltd. It A sharpening stone of general use can also be used for grinding. Current examples for such a grindstone are "PVA Grind Stone" and "FBB Grind Stone" supplied by Nihon Tokushu Kento Co., Ltd. Depending on the quality and type of the grindstone, the surface can have a different degree of roughness be smoothed or treated.

If the substrate, which is basically in the form of a hollow or filled (solid) cylinder, is ground as indicated above, it can be surface-treated or smoothed with a high dimensional accuracy so that a substrate with a surface roughness within the range of 0.05 to 1.5 \ imS , which is suitable as the surface roughness of the substrate when applied to an electrophotographic photoreceptor which can be easily and positively manufactured.

In addition, the surface roughness of the has this Wise treated (smoothed) substrate almost no fluctuations. Provided the same grinding conditions are applied, a surface with a certain surface roughness is therefore always achieved, while the Substrate is processed on a cylindrical surface with a true circular shape without wave formation.

It should be noted that the surface roughness of the substrate (or the carrier plate), as for the

3Q embodiment according to the invention specified, was determined by using a surface roughness measuring instrument / as sold by Tokyo Seimitsu Co., Ltd., and a continuous height indicator Model Surfcom 1C (usually the surface scanned in a width of 25 mm to the distance in μπι between the highest and the lowest value or between adjacent peak and bottom).

······· 332164!

ι Below are three working methods with reference on actual examples of their application to the surface of the substrate, including those mentioned above Include grinding process: 5

SM procedure

A 340 mm long aluminum tube with an outside diameter of 120 mm was surface-treated (smoothed) under the conditions given below, for production development of a substrate:

Machining equipment: cylinder-grinding mirror-surface-

treatment device;

Grinding stone: "PVA-1500", outer diameter 200 mm and Thickness 50 mm with a central fastening hole with a diameter of 50 mm (supplier; Kanegafushi spinning

Co., Ltd.);

Rotating speed of the grindstone: 800 rpm; Transport speed of the grindstone: 0.7 m / min; Contact pressure of the grindstone: 40 kg; Angle between the axis of rotation of the grindstone and the Plane perpendicular to the central axis of the substrate: 45 °; Peripheral speed of the rotating substrate:

75 m / min;
Repetition of grinding: simple forward and

Backward hike; and

Grinding liquid: "PVA Grinder Liquid No. 3" (Supplier: Japan Grease Co., Ltd.).

The surface-treated (smoothed) Tube had a uniform surface roughness of 0.8 µmS, an outside diameter of 120.003 mm and, had a percentage of light reflection of 24% at a wavelength of 930 nm.

SF process

An aluminum pipe as described above was surface-treated (smoothed) under the following conditions:

Processing equipment: Lathe "Model LPT-35C" (Supplier: Washino Machine Co., Ltd.) and Super Finisher "Model T-SE140" (Supplier: Toyo Kogyo Co., Ltd.); Whetstone: "FBB-GC1000" (Supplier: Nihon Tokushu

5 Kento Co., Ltd.);

Vibrations of the grindstone st 1500 c / min; Contact pressure of the grindstone: 0.6 kg / cm ² ; Peripheral speed of the rotating substrate: 150 m / min;

Conveying speed of the grindstone: 500 mm / min; Repetition of grinding: single hike; and Grinding fluid: tap water.

The pipe surface-treated (smoothed) in this way had a surface roughness of 0.8

Liquid grinding (honing)

In addition, the above-mentioned untreated aluminum pipe can be liquid grinding (honing) among the following Conditions surface treated (smoothed) are:

Machining equipment: "Model F-5" (Supplier: Fuji Seiki Manufacturing Co., Ltd.);
Abrasive Materials: "No. 2000" silica powder; Carrier fluid: tap water (abrasive materials:

Carrier Liquid = 4: 1 (by weight);

Air pressure: 3.0 kg / cm ² ;

Distance from the nozzle to the substrate: 80 mm; 30 blowing angle: 60 °; and Nozzle opening: 8.3 nm in diameter.

Substrates giving rise to different surface roughness surface-treated (smoothed) were each coated with a charge blocking layer by evaporation or glow discharge decomposition, if necessary furthermore with a charge carrier transport layer by glow discharge decomposition

if necessary, and then with a photosensitive layer based on a-Si and a surface modification layer

A Gliiwnent charge svor direction, as explained in the Fig., Can glow discharge decomposition will be used to perform. In the vacuum chamber 22 of this glow discharge device 21, the above substrate 1 is attached to the substrate holder 24 equipped with a heater for heating the substrate to a prescribed temperature. A high-frequency electrode 27 is arranged opposite the substrate 1 in order to generate glow discharges therebetween. In addition, in Fig. 4 control valves 30 to 34, 37 to 40, 44, 46 and 48, a supply ^shaft 41 for SiH 4 or another gaseous silicon compound, a supply _{source 42 for B 3} H ₆ or PH, a supply source 43 for CH- or another gaseous carbon compound, if necessary, and a supply source 45 for a carrier gas such as Ar, H- or the like., Provided. In the above-mentioned glow discharge device, a substrate 1, for example one made of aluminum, is first attached to the interior of the vacuum chamber after its surface has been cleaned. The control valve 46 is actuated so that it sucks in air, in order to adjust the gas pressure inside the vacuum chamber 22 at 10 Torr while the substrate 1 is heated and maintained at a prescribed temperature, for example 30 to 400 ° C _(. Thereafter, a gas mixture , in which SiH. or a gaseous silicon ^{compound is mixed with B} 2 ^H 4 ° ^ ^{er Pil} 3 and / or CH. or a gaseous carbon compound, if necessary, after dilution in a suitable manner with an inert carrier gas of high purity in the vacuum chamber 22 and, for example, under a reaction pressure of 0.01 to 10 Torr, a high-frequency voltage of, for example 13.56 MHz is applied from a high-frequency energy source 26. The above-mentioned reactant gases are thereby decomposed with glow discharges, wherein

a hydrogenated silicon material, a-Si: II or 3-SiCiH ₇ precipitates with the formation of the above-mentioned layer 2, 3 or 4. In addition, an a-SiCiH layer can be applied to the layer 2 as a surface modification layer.

It should be noted that the blocking _{layer and the surface modification layer composed of an SiO 1} layer or the like can be formed by a method other than glow discharge decomposition such as vapor deposition. In addition, when the above-mentioned CH _{4 is} replaced with NH ₃ or N ₂ , hydrogenated amorphous silicon nitride may be precipitated.

In the thus prepared respective photoreceptors, the electrostatic properties, the Adhesion of the coating to the substrate, the formation of white spots and the image quality of those made therefrom Copies determined (estimated). The photoreceptor was designed in the shape of a drum to evaluate the image by using a glow discharge device. In the following Table I are the results obtained specified. For the above values, performance tests were carried out using an electrometer (Supplier: Kawaguchi Denki Co., Ltd.) and a modified unit U-Bix V-2 (a model of a copier, using a dual component developer, supplier: Konishiroku Photo Industry Co., Ltd.).

30 35

No. 2 Machining Surface ymS Tabel I. - A. material SiO ₀ Il ( TVi rkA M. A. a-SiC 1 3 procedure smoky μ KlS - - Il Surface m 2,000 ti inventive up to X 4th SM procedure Ness yiriS - - Il Il Il example It 5 Al-Mn-s substrate. 2.0 ytnS Blocking layer -. dd 0— Il Il Comp. Ex. M. 2 JIS 3003 1.5 yltlS Itching - - Il
. * 4)
a-SiN ' photosensitive differentiation layer • I Il It 3 •1 1.2 ytnS - - endowed layer Il Il Il 6th Il 0.5 yinS - - ■■ Il * 2)
a-Si: H-layer (intrinsic) Il It Comp. Ex. It 0.1 yinS 000 A. • j ,. Il • I Il A. a-SiC Il 7th Il 0.05 yinS Il ti 2,000 If req. ex. 8th SF method 0.02 Il Il Il 9 Al-Mn-s substrate 2.0 pmS Il It Il '
1 Il 10 JIS 3003 1.5 pitiS Il Il
a-SiC ^o> Il It Il Il 4th
5 Il around S. 2, Il endowed Il
. * 2) Il Il V> Il Il 1.2 around S. Il ti a-Si: H-layer (intrinsic) Il "I. dd 11th Il 0.5 yraS Il
000 α
A. Il ■ I Il A. Il Comp. Ex. 12th It 0.1 ■ 1 H
2,000 13th Il
Honing procedure 0.05 around S. η A. Il Il * "*« req. ex. 14th Al-Mn-S substrate 0.02
2.0 ymS Il λ It Il ■ 1 Il » 15th .JIS 3003 pmS Il 0
A. Il Il ti ti ··· Il 6th
16 H 1.5 ymS 2, Il A. It Il 11th »It *
· * »· It Il 1.2 ymS It A. Il
* 2)
a-Si: H-layer (intrinsic) U »Ma. Il 17th ti 0.5 ymS
pmS Il
20th vm It A. * .v * *
SiO ₀ Comp. Ex.
erf BeiSD. 18th Il 0.1 around Il 11th
1,500 * · · 19th Il
SM procedure 0.05 Il 50 It • H * ·· 20th Al-Mn-s substrate 0.02
0.8 Il 100 Il Il 8 Il *
ι «β * Il 21 JIS 3003 Il 400 Il Il Il 22nd " Il , 000 Il Il Il
«LC Il 23 Il Il , 000 Transport- "* 3 \
Layer. (a-SiC) ti Il ^^ Il Il Il 1 light sensitive (a-Si) If Il '/ ^ * " M. Il Il 2 Shift. " dd M 1 Il It η ti It 1 Il 5 Il Il Il M.

Example no.

Table I - continued formation of

Charging potential, dark, light sensitivity, white adhesion of the biIdtial (volt) fall (%) E _{1 / o} (lux.see) stains, coating quality

Comp. Ex. 1 req. ex. 1 Il 2 Il 3 Il 4th Il 5 Comp. Ex. 2 Il 3 req. ex. 6th N 7th Il 8th η 9 I. 10 Comp. Ex. 4th Il 5 req. ex. 11th It 12th η 13th M. 14th Il 15th Comp. Ex. 6th req. ex. 16 Il 17th Il 18th n 19th η 20th Il 21 ti 22nd Il 23

360 378 390 410 415 413 415 400 418 490 440 444 440 445 380 435 448 451 450 452 450 -400 -415 -430 -445 -450 -418 -452 -452

45

40

35

31

30th

30th

31

35

32

28

25th

23

23

24

40

30th

25th

23

21

21

22nd

27

32

26th

25th

21

23

20th

20th

1. 2 1. 0 0. 9 0. 9 0. 9 0. 9 0. 9 0. 9 0. 8th 0. , 7 0. , 7 0. .7 0. .7 0. .7 1, .0 0, .8th 0, .7 0 .7 0 .7 0 .8th 0 .8th 0 .9 0 .8th 0 .7 0 .6 0 .6 0 .6 0 .8th 1 .5

X O X Δ O Δ O ® O O ® O O ® O O O O O Δ Δ X O X Δ O Δ O φ Θ © ® © a> ■ © Φ Θ O ο O X Δ X O X Δ O O O ® © O © Θ ® S) © ® O ο O X Δ Δ © Δ © & Θ ® ® ® © © · ® ® ® θ ® ® O G) Δ

Footnotes to Table I.

SiO ₂ layer, formed by vapor deposition of SiO in oxygen gas

2)

15 μια thick, boron-doped photosensitive a-

Si: H layer made by Glow Discharge Zer-5

setting with the introduction of B ₂ Hg at a rate of B ₂ Hg / SiH ₄ = 100 ppm, that the photosensitive layer became intrinsic.

The charge carrier transport layer made of a-SiC was 15 μm thick with a carbon content of 20 atomic% while the photosensitive layer made of a-Si for the generation of charge carriers was 1 μm thick.

⁴ 'a-SiN (B ₂ Hg / SiH ₄ = 10 000 ppm when doping)

* a-SiC (PHL / SiH,. = 1000 ppm when doping). 15 ^J ^ *

Those used in the "White Speck Formation" and "Coating Adhesion" columns of the table above Symbols have the following meanings:

@ : No formation of white spots / no peeling of the coating was observed;

ο: Only some of the samples tested did White specks / coating peeling noted;

Λ: there was a formation of white spots / one only locally

Detachment of the coating detected; and

×: White stain formation / coating peeling was observed on the entire surface.

In addition, in the coating adhesion test, one became 1 cm wider Adhesive tape applied and peeled off immediately.

The symbols used in the "Image Quality" column of the same table have the following meanings:

0: High density with a reflection density of 1.0 or above and an advantageous general image quality;

o: normal density with a reflection density between

0.7 and 1.0, but still with an advantageous ge normal image quality;

Δ: normal density but rougher copy image; and

^X: low density with a reflection density of not higher than 0.7 and a marked roughness of the copied image.

From the above results it can be seen that when layers have been applied to a substrate, its

₁ g of surface roughness was within the range of 0.05 to 1.5 µmS in accordance with the present invention, the electrostatic properties, image density, image quality and adhesion of the coating were all favorable and, moreover, particularly if

_nn 50 8 to 1 μm thick blocking layer was applied, the electrostatic properties of the photoreceptor were even further improved. If the surface roughness was below 0.05 µmS, the adhesion of the coating was poor, while if the surface roughness was above 1.5 µmS, significant dark decay occurred and the copied image tended to form white spots.

Hereinafter, a further preferred embodiment of the invention with reference to the Fig. 8 is explained in detail _on to. 11

In Fig. 8, there is shown a photoreceptor in which an alumina or alumina-Al ^ O-j layer 5 a Thickness of 50 to 5000 S, in particular a thickness of 400 to 5000 8, using a known anode oxidation process on a substrate 1 made of a metal or an alloy, such as aluminum or an aluminum alloy, and also a light-sensitive

* ft «

^. Q «N V W» W Ό «W Ή τ w

borrowed a-Si-based layer 2 with a thickness of only to 40 μπι and in particular one made of a-Si: H on the this oxide layer 5 was generated.

In addition, as shown in FIG. 9, if an a-Si-based charge transport layer 4 is provided with a Thickness of 5000 Å to 35 μm and in particular one such made of a-SiC: H or a-SiN: H between the photosensitive layer based on a-Si 2, which, for example, consists of a-Si: H itself or a-SiGe: H, and the above-mentioned oxide layer 5 is arranged, a photoreceptor having a ver improved potential retention of the surface, a high sensitivity with a lower one Has residual potential.

It is further preferred to additionally have a charge transport layer 3, as indicated by a broken line in FIG. shown at a thickness of 50 8 to 1 µm below the a-Si based charge transport layer 4 and adjacent to produce the surface of the substrate 1. As already mentioned in relation to FIG. 2, this can Blocking layer 3 made of a ~ Si: H, a-SiC: H or a-SiN: H, doped with a high concentration of impurities, of the p-type and further of the p + -type or of the η-type and

25 also consist of the n + type.

In FIG. 10, the above-mentioned blocking layer is used without forming the charge transport layer as shown in FIG. 9 introduced when the blocking effect is improved, as in the case of FIG. 9.

In this embodiment, the above-mentioned oxide film 5 may, for example, under the following conditions getting produced:

35 treatment bath: aqueous sodium phosphate solution; Bath temperature: 20 ^° C. treatment time: 10 s to 5 min; and current density: 1 A / dm ² .

It should be noted that the thickness of the above-mentioned oxide layer 5 is determined by one of the following methods can be determined:

5 1) Using an interference microscope

The layer is irradiated with a monochromatic light beam and the resulting Newton's rings are seen are counted to determine the thickness of the layer according to a known formula;

2) Using a Talystep measuring instrument, supplied

from Rank Taylor Hobson Inc .; and 3) using an egg lipometer

The layer is irradiated with a polarized beam of a He-Ne laser to determine the rotation of the

15 Polymerization level ·.

The photoreceptor according to this embodiment can be manufactured using the method shown in FIG illustrated glow discharge device or using a glow discharge device for a drum-shaped photoreceptor.

For the respective photoreceptors, those of the present According to embodiment of the invention, the electrostatic properties and the image quality of the copies made from it. The results are given in Table II below. For the The above measurements were performed performance tests using an electrometer (supplier: Kawaguchi Denki Co., Ltd.) and a modified unit of the copier model U-Bix V-2 (supplier: Konishiroku Photo Industry Co., Ltd.).

Example no.

invent.-acc. 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 4 3

Material and surface roughness of the substrate

Äl-Mn alloy (JIS 3003), surface treated to a roughness of 0.5

Table II

Thickness of the oxide layer produced by anodic oxide treatment time / time " ⁵ -conditions

as above

44 y 20 A

50 λ

200 A

400 A

1,000 5,000 A

1 y

20 A

50 A

200 A

400 -E

1,000 A 5,000 A

20 50 200 A 400 1,000 A 5,000 1 u

pm

5 " above in aqueous Na- 10 " Il Phosphate 20 " Il 2O ⁰ C with a 40 " Il Current density of I ¹ Il 1 A / dm ² 5 ¹ Il 10 « H how above Il Il "1 M. ti Il how

* The thickness of the OKid layer was determined using the already mentioned ellipsometer.

example No. 25th Required according to example 2 4 26th Il 27 Il 28 Il 29 Il 3 Oj ti ³¹ I. Il 32 Il 33 Il 34 Il 35 Il 36 Il 37> Il 38 Il 39 Il 40 It 41 Il 42 Il 43 Il 44 Il Il

Table II - continued

Charging potential - uncle - residual polarity - sensitive to light and other layers tial (V) fall (%)

potential (V.J

15 micrometer thick charge carrier transport layer of a-SiC (C: 20%), 1 \ m thick lichtertpf indliche layer of a-Si and 1500 Å thick Cberflächenmodifizierungsschicht of a-SiC were laminated in this order on a substrate.

2000 8 thick blocking layer made of a-SiN, _{heavily doped using Ea 3} , 15 μm thick charge carrier transport layer made of a-SiN (N: 20%), 1 μm thick light-sensitive layer made of a-Si and 1500 8 thick surface modification layer made of a-SiN were rt in this order on a substrate auflamini e

2000 8 thick blocking layer made of a-Si, _{heavily doped using B 2} H _ß , 15 μm thick light-sensitive layer made of a-Si (intrinsic type) and 1500 A thick surface modification layer made of SiO were laminated onto a substrate in this order.

-380 -402 -415 -435 -440 -445 -450 -420 -435 -450 r480 • -490 -500.-505 +360 +375 +400 +410 +415 +425 +430

40 35 32 30 31 29 28 40 31 27 25 23 22 20 43 37 35 32 34 32 30

7 8

11th

16

19th

22nd

70

10

15th

20th

25th

50

12 19 22 28 60

picture quality

Δ Δ ο ο

O O

Δ Δ Δ ο ©

Δ Δ Δ O O O O Δ

»» Ί> * ♦ ft α «

Ο ft * 1

33216

The symbols used in the "Image Quality" column of the table above have the following meanings:

®: High density with a reflection density of 1.0 or more and a favorable general image quality; ° ^: normal density with a reflection density between 0.6 and 1.0, but still with an advantageous general image quality;

Δ: lower density with a reflection density not higher than 0.6.

To analyze the above results, for example the characteristic curves are plotted in Fig. 1 with reference to data of Examples 24 to 36. From these curves it can be seen that if the thickness of the alumina layer produced by anodic oxidation is chosen so that it is in particular within the range of 50 to 5000 A, both the Dark decay as well as the residual potential can be kept low, resulting in very beneficial electrostatic Properties leads. From this it can be seen that especially when the above oxide layer is even slightly was thinner than 50 8, a sharp increase in the rate of dark decay as a result of the decrease in blocking

effect occurred, while with a thickness over 5000 8 a considerable increase in residual potential occurred. It should be noted that the combination of the Blocking layer and the oxide layer further improved the blocking effect. In addition, the anodized see oxidation produced above oxide layer, as it is according to the invention is used to have a uniform thickness.

Further embodiments of the invention are described in more detail below with reference to FIGS.

As mentioned earlier, the above problems can arise of the known photoreceptor can be solved in principle

by surface treatment (smoothing) the surface of a Substrate in a suitable manner and in particular until a surface roughness is achieved within the range from 0.05 to 1.5 μπιε (difference between the highest and lowest value measured along the standard length of 25 mm) and preferably within the range of 0.1 to 1.2 μπιβ. In this context it was found that for treating (smoothing) the surface of a substrate made of an aluminum alloy up to such Surface roughness it is important to have a certain composition of aluminum alloy, as indicated below, to use. It is important to use an aluminum-manganese alloy or an aluminum-magnesium alloy, which contains manganese or magnesium in an amount of 1/0 to 1.5% by weight and 2.2 to 5.0% by weight, respectively use. It has been found that when the manganese or Magnesium content is outside the above range, the surface of the substrate tends to Get sanding strips when they are surface treated (smoothed), so that the desired surface roughness can hardly be achieved.

When the composition of the aluminum alloy for the substrate material is within the above range is selected, the surface of the substrate can be easily treated (smoothed) to achieve the above Surface roughness with a high precision. Therefore, the applied to the substrate becomes photosensitive A-Si-based layer no longer adversely affected by the surface condition of the latter, thereby improving the electrostatic properties of the photoreceptor. In contrast, points the previously used substrate material has poor machinability when treating (smoothing) its surface so that it is very difficult to get a surface roughness within the above range and therefore the problem described below is inevitable is. Namely, if a substrate that consists of a

3321641

is aluminum alloy other than the above composition is used, the surface roughness exceeds 1.5 nms often or there is a tendency that it is less than 0.05 \ m £>. In the former case, the photoreceptor tends to form white spots and traces of abrasive streaks in the copied images, and it has an undesirable tendency to cause excessive injection of charges from the substrate, resulting in a much faster dark decay. In the latter case, the substrate has practically a mirror surface, which is synonymous with poor adhesion of the coating to the substrate.

The above surface roughness as it is in the Substrate material obtained in accordance with the embodiment of the invention described herein is very effective at the production of a photosensitive layer based on a-Si and in particular one with a thickness from 5 μΐη to 40 μΐη. Although the photosensitive A-Si based layer that is made thin, tending to be affected by the surface roughness of the substrate being adversely affected allows the surface roughness to be adjusted to those given above Area of producing an a-Si type photoreceptor of good coating quality with a satisfactorily high charging potential.

The above effects in terms of suppressing dark decay, preventing the formation of white spots in the copy image and the like are remarkable particularly in the case of a charge blocking layer, which is intended to prevent the injection of holes or electrons from the substrate and thereby retain the given charge potential in the surface that is adjacent to the surface of the Substrate is provided. When the surface roughness of the substrate within the range given above

is, the charge blocking layer can be made in such a favorable state as to provide the desired Blocking effect can have the full extent. The charge blocking layer becomes 50 R to 1 µm, preferably made 400 to 5000 Å thick. If the thickness is less than 50 A *, the effect is unsatisfactory, while a thickness greater than 1 µm is too thick as it is a causes undesirable retention of the residual potential. The blocking layer preferably consists of one insulating substance or a semiconducting material based on hydrogenated amorphous silicon, which with a high concentration of one or more elements of group IIIA or VA of the Periodic Table of the Elements is endowed. Such a blocking layer is effective for greater sensitization and one thinner construction of the photoreceptor as well as in relation to the suppression of the dark decay, the reduction of the Formation of white spots in the copy image and the increase in the charging potential.

In addition, it is also conceivable that a light-sensitive A-Si-based layer made in the intrinsic state on the above-mentioned charge blocking layer is applied. Preferably, a charge transport layer made of hydrogenated and / or fluorinated amorphous silicon carbide or hydrogenated and / or fluorinated amorphous silicon nitride and an a-Si based photosensitive layer and a surface modification layer is applied thereon.

After the substrate has been treated (smoothed) to a surface roughness within the specified range has been, its surface is preferably subjected to oxidation, and particularly anodic oxidation subjected to the production of a 50 to 5000 8 thick aluminum oxide layer and to the application of the above photosensitive layer on it. For whom one is sufficient

332164

thick aluminum oxide layer has a thickness within the Above is generated by anodic oxidation on the surface of the substrate, the Blocking effect in the a-Si type photoreceptor is effectively prevented, resulting in satisfactory improvements in terms of its dark decay properties and other properties. In particular, the a-Si-based photosensitive layer itself has a specific resistance which is too low for the

^ q layer have satisfactory charging properties could, together with the above-mentioned oxide layer, however, the given charging potential can be kept high become due to the charge blocking effect of the same and also the adhesion of the coating to the substrate can be improved. For this purpose it is important limit the thickness of the oxide layer to a value within the range of 50 to 5000 8. If you is produced by anodic oxidation, this oxide layer has a uniform thickness and the adhesion of the overlying coating can be improved.

When the surface roughness of the substrate falls to a Value is limited within the above range, it is also preferable to use the surface of the substrate to a glow discharge oxidation instead of anodic oxidation to produce a Aluminum oxide layer, in particular a 15 to 1000 8, preferably 50 to 500 A thick layer. Such Oxide layer also exerts a certain charge blocking

go out effect while at the same time improving contributes to the adhesion of the overlying coating to the substrate. Since glow discharges also for the surface treatment of the substrate is applied, For example, the a-Si based photosensitive layer can then be deposited thereon by means of the same glow discharge device. The photoreceptor can can be made in this way using a continuous process, no separate

3321Ö4Ö

Level is required. As a result, contamination of the substrate, which is common in the case of an or more separate stages can occur can be avoided. In addition, the coating itself is formed uniformly. 5

The substrate can consist of a metal or an alloy, with the desired surface roughness of the same by using any of the three machining methods (a) to (c) already described can be.

Fig. 12 shows a photoreceptor in which the surface of a substrate 1 made of an aluminum alloy with an aluminum oxide or alumina (Al ₂ O ₃ ) layer 3 with a thickness of 50 to 5000 8,

in particular from 400 to 5000 A * or a thickness of 15 to 1000 8, in particular from 50 to 500 8, using a known surface oxidation process, for example is coated by anodic oxidation or glow discharge decomposition and is photosensitive A-Si-based layer, and in particular an a-Si: H layer, has a thickness of 5 to 40 μm this oxide layer 3 deposited.

In addition, as shown in FIG. 13, when a charge transport layer 4 is composed of a compound a-Si base and in particular made of a-SiC: H or a-Si-N: H a thickness of 5000 8 to 35 μια between the photosensitive A-Si-based layer 2 composed of, for example, a-Si: H or a-SiGe: H, and the above Oxide layer 3 is deposited, the retention of the given surface potential is improved, so that one A photoreceptor with a high sensitivity with a lower residual potential is obtained.

Furthermore, it is preferred to additionally have a charge blocking layer 5, as indicated by the broken line in Fig. 13, in a thickness of 50 Å to 1 µm and

332164

below the a-Si-based charge transport layer 4 and to be deposited adjacent to the surface of the substrate 1. This blocking layer 5 can consist of a-SiC: H or a-SiN: H of the p-type and further of the p + -type or of the η-type and further of the n + type doped with a high concentration of impurities, as mentioned earlier.

In Fig. 14, the above blocking layer 5 is without Formation of the charge transport layer according to FIG. 13 introduced. As in the case of Fig. 13, there is an improvement here too the blocking effect achieved.

In the preferred embodiment described here According to the invention, an Al-Mn or Al-Mg alloy according to one of the following is preferably used for the substrate 1 JIS standards used:

JIS 3003 - Mn 1.0-1.5%;

20 JIS 3203 - Mn 1.0-1.5%;

JIS 3004 - Mn 1.0-1.5%;

JIS 3005 - Mn 1.0-1.8%;

JIS 5052 - Mg 2.2-2.8%;

JIS 5652 - Mg 2.2-2.8%;

JIS 5154 - Mg 3.1-3.9%;

JIS 5254 - Mg 3.1-3.9%;

JIS 5454 - Mg 2.4-3.0%; »30

JIS 5082 - Mg 4.0-5.0%;

JIS 5182 - Mg 4.0-5.0%;

JIS 5083 - Mg 4.0-4.9%; and

35 JIS 5086 - Mg 3.5-4.5%.

The use of these aluminum alloys facilitates the shaping and surface treatment (smoothing), so that the surface roughness is adjusted evenly can be (controlled), whereby the properties of the interface between the substrate and a

A-Si-based layer can be improved, which leads to a significant improvement in the charge blocking effect leads. Compared to other aluminum alloys or to Al-Cu, Al-Si and Al-Zn alloys and too pure , Q aluminum can use the above alloys photoreceptors which result from a high initial potential, less dark decay and advantageous copy reproduction properties are characterized.

It should be noted that photoreceptors that the The embodiment of the invention described here corresponds to the use of a glow discharge device 7 or a glow discharge device for a drum-shaped photoreceptor

2Q can be and that grinding the surface of their Substrate and the creation of an oxide layer in this surface under the same conditions as already mentioned can be carried out.

For photoreceptors made in accordance with this embodiment of the invention, data on the workability of their substrate and the degree of white spot formation on the copy image made therewith are given in Table III below. For the above _n measurements, performance tests were carried out using an electrometer (supplier: Kawaguchi Denki Co., Ltd.) and a modified copier unit model U-Bix V-2 (supplier: Konishiroku Photo Industry Co., Ltd.).

Example no.

invent.beispi45 4 6 4 7

48 ₄₉

50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 /

II
M.
Il
Il
Il
Il
Il
Il
■ I
Il
Il

Il Il

Substrate composition

0. SO

Table III

2024

1050

5005 SO

7401

3003

3203

3004

3005

5652

5154

5254

5454

5082

5182

5083

5086

as above

1. 1. 1. 1. SO £ 0 £ 0 0. £ 0

3-0.9 / 1.2-1.8

.05 / SUN.05

.2 / 0.5-1.1

20-0.7 / 1.0-2.0

0-1.5 / -

0-1.5 / -

0-1.5 / 0.8-1.3

0-1.5 / 0.20-0.6

.01 / 2.2-2.8

.10 / 3.1-3.9

.01 / 3.1-3.9

50-1.0 / 2.4-3.0

.15 / 4.0-5.0

20-0.50 / 4.0-5.0

40-1.0 / 4.0-4.9

20-0.7 / 3.5-4.5 Methods for treating the substrate surface

An aluminum tube, the circumferential surface of which is made by means of a caisson • was cut to a pitch of 3.0 uirtS on a cylinder Sdaleif surface finisher model SM-1A-1500 {Supplier: Sanko Machinery Co., Ltd.) another surface treatment (Smoothing) subjected to a roughness of 0.3 µmS under the following conditions:

Grindstone: EBB-GC2000, Supplier: Nihon lokushu Kento Co., Ltd .; Speed of rotation of the grindstone: 6000 rpm; Grindstone feeding speed: 0.7 m / min; contact pressure exerted by the grindstone: 35 kg; Initial speed of the rotating substrate: 116 m / ntin; Grinding liquid: 'tap water;

Repetition of grinding: simple hike back and forth.

as above

Table III - continued

Example no.

invented example 45 Il 46 ti 47 It 48 Il 49 Il 50 Il 51 Il 52 Il 53 Il 54 H 55 Il 56 Il 57 Il 58 ti 59 Il 60 Il 61 1) Il 62 Il 63 Il 64 Il 65 Il 66 ti 67 2) Il 68 Il 69 Il 70 Il 71 Il 72 Il 73 3) Il 74 Il 75 Il 76 *) In the Split " about that had,

Grinding Education of whites / / / / / construction of strip * stains / / / Photorecepts Δ 1) 2): Δ Δ Δ O O
O O O O O O O O O
O

Photoreceptors were made by successive Δ

On laminating an a-Si layer with a thickness of 5000 Å, doped "Δ

using 1000 ppm B ₂ EL, a 15 μm thick lichtenpfind- Δ

lichen layer (in the intrinsic state) and a SiO ₂ surface Δ

Modification layer with a thickness of 1500 Å on substrates such as ®

mentioned above had been treated (smoothed). ®

Photoreceptors were made by sequential Auf- ®

laminating a 3000 Å thick a-SiO layer doped using ©

of 500 ppm PH ₃ , a 15 μm thick a-SiC charge carrier transport layer, ο

a 1 pm thick light-sensitive a-Si layer and a 1500 A. dik- ο

ken SiD ^ -Cterface modification layer on substrates, which as above ο

indicated had been treated (smoothed). ο Substrates which had been treated (smoothed) as specified above were ο

subjected to anodic oxidation to produce an alijmini- ο

umoxid layer with a thickness of 1500 % and the above under (1) or (2) °

indicated photoreceptor layers were applied thereon. ο

Abrasive stripes "is the symbol" Δ. "When these stripes have a depth of 2.0 µm or otherwise the symbol "o" appears if such stripes did not appear.

Δ Δ Δ Δ © ® © Θ O O O O O O O O

3)

Δ Δ Δ Δ

® Θ

σ ■ t ο

ιβ »* β ♦ α

In the column "Formation of white spots" in the above table, symbols are used which have the following meanings to have:

®s no formation of white spots? ^{o: was} only used in part of the copy samples produced

noted the formation of white spots; Δ- in the copy image there was only local formation of white spots were noted.

IQ From the above results it is apparent that when the described embodiment of the invention are applied, the photoreceptor layers on a substrate in accordance with which consists of an Al-Mn or Al-Mg alloy, and a surface roughness of from 0.05 to 1.5 µmS, the substrate can be advantageously surface-treated (smoothed) and the desired image quality obtained with the resulting photoreceptor is advantageous in every point and that by making a blocking layer and in particular a combination of an A ^ O ₃ layer and a doped a-SiiH or a-SiC: H blocking layer, the properties of the photoreceptor can be further improved.

Another embodiment of the present invention will now be described with reference to Figs described in more detail.

Namely, it has been found that in addition to limiting the surface roughness of the substrate to one value within the range given above, also the action of glow discharges on the surface of the substrate to produce a 15 to 1000 8, preferably 50 to 500 A thick oxide layer, which not only has the task of providing a certain charge blocking effect,

gg but also the adhesion of the coating to the substrate to improve? and then depositing an a-Si based photosensitive layer thereon in FIG same glow discharge device the manufacture of the

-JXG-

Photoreceptor in the context of a continuous process without performing a separate step and thus without Contamination of the substrate, which can often occur when one or more separate steps are required, and that the coating produced in this way is itself uniform (uniform).

Fig. 15 shows a photoreceptor in which an alumina or alumina (Al ₃ O ₃ ) layer 3 of a thickness of

15 to 1000 A, preferably from 50 to 500 A ¹ , using a known glow discharge process on a substrate 1 consisting of a metal or a metal alloy, such as aluminum or an aluminum alloy, which has been surface-treated (smoothed) up to one Roughness of 0.05 to 1.5 \ imS has been generated and a photosensitive layer based on a-Si, in particular an a-Si: H layer 2 in a thickness of 5 to 40 µm is deposited on this oxide layer 3.

In addition, as shown in FIG. 16, a charge blocking layer may be used 4 additionally in a thickness of 50 8 to 1 μm below the light-sensitive layer Base of a-Si 2 and be arranged adjacent to the oxide layer 3. This blocking layer 4 can be made of a-Si: H, a-SiC: H or a-SiN: H of the p-type and furthermore of the p + -type or of the η-type and furthermore of the n + -type, doped with a high concentration of the impurities, as already mentioned, exist.

If now, as shown in FIG. 17, a charge transport layer based on a-Si 5 and in particular one

ο a-SiC: H or a-SiN: H of a thickness of 5000 Å to 35 µm additionally between the photosensitive layer based on a-Si 2, for example one made of a-Si: H or a-SiGe: H, and the above oxide layer 3 is generated, the potential retention of the surface is increased, so that a photoreceptor having a high sensitivity and a lower residual potential can be obtained.

-57-

The photoreceptor according to this embodiment of the invention can also be fabricated on the above-mentioned glow discharger or a glow discharger for a toroidal photoreceptor, and its substrate can be surface-treated (smoothed) under the same grinding conditions as mentioned above. It should be pointed out that the oxide layer 3 can be produced by exposing the surface of the substrate to glow discharges _{in the presence of O 2 gas.}

In the respective samples of the photoreceptor according to this embodiment of the invention, the electrostatic Properties, the adhesion of the coating to the substrate, and the image quality of those made therefrom Copies determined. The results are given in Table IV below. For the above measurements, Performance tests were carried out using an electrometer (supplier: Kawaguchi Denki Co., Ltd.) and a modified copier unit, model U-Bix V-2 (supplier: Konishiroku Photo Industry co., Ltd.).

Table IV

No. Substrate Surface roughness 2.0 example 7th A1 - Mn - Leg ier of the substrate, μπ6 1.5 Cf. ex. 77 JIS 3003, 1.2 invent Ex. 78 0.5 Il * ■ 79 surface treated 0.1 Il 80 according to the SMr method 0.05 «I. 81 ren 0.02 Il 8th 2.0 VqI.-Ex. 9 ) 1.5 Il 82 as above 1.2 invent Ex. 83 0.5 M. 84 0.1 M. 85 0.05 Il 86 0.02 Il 10 I. 2.0 Cf. ex. ¹ st 1.5 ti 87 as above 1.2 invented example 88 ⁽ 0.5 M. 89 0.1 Il 90 0.05 Il 91 0.02 dd 12 y 2.0 Cf. ex. 13 ι 1.5 Il 92 j as above 1.2 invented example 93 0.5 Il 94 0.1 Il 95 0.05 If 96 0.02 Il 14 i Cf. ex.

Oxide film formation
by glow discharges

80 8 thick oxide layer, created by a 16-minute surface treatment under the
the following conditions:
Vacuum 100
5000 V and
0.5 A
as above

A-Si based blocking layer on the substrate

a-SiC blocking layer, heavily doped using of 1000 ppm PH- a thickness of 3000 K

no blocking layer in the photoreceptor coating

120 A * thick oxide layer, err a-Si layer, heavily doped

testifies by 15-minute upper- using 1000

surface treatment under the ppm B ₃ H _{6 with} a thickness of the same conditions as above 2000 8

"!as above

no blocking layer on the photoreceptor coating

Table IV - continued

Example No. Photoreceptor Construction

Cf. ex. 7 Inventive Example 77

78

"79

"80

81

Cf. ex. 8 9

Invent. Example 82

"83

84

85

"86

Cf. ex. 10

11th

Inventive example 87 88 89

"90

91

Cf. ex. 12 13

invent, example 2 93 94 95

"96 See Ex. 14

15 μτη thick a-SiC charge carrier transport layer (C: 20%), 1 μm thick light sensitive a-Si layer and 1500 A thick SiCL surface mod ization not

as above

above load carrier transport

layer,

15 um thick light indigenous

a-Si layer (intrinsic

Type) and

2000 S thick SiC surface

differentiation layer

as above

Charging po Dunkelzer Lichten ^ potential (V) fall (%) ability (1 -410 40 1.1 -420 38 0.9 -490 25th 0.8 -520 23 0.8 -500 24 0.8 -490 25th 0.8 -500 24 0.8 -350 45 1.2 -370 42 1.0 -410 35 0.9 -420 36 0.9 -430 37 0.9 -420 35 0.9 -430 35 0.9 +390 37 1.0 +405 34 0.9 +480 27 0.8 +500 25th 0.8 +505 24 0.8 +500 23 0.8 +490 25th 0.8 +300 40 1.2 +320 39 1.1 +310 37 1.0 +330 35 1.0 +310 34 1.0 +300 33 1.0 +290 34 1.0

Lichtirpfindlich- liability of
see) coating

ο
ο

©
ο
Δ
O
O

O
Δ
X
O

O
Δ
O
O

O
Δ
X

picture quality

Δ ο

O Δ O O O O O O Δ O

θ φ

Θ ο

O Δ O O O O O O

'-4Qr-

In the "Liability" column of the table above, the symbols used the following meaning: ®: No peeling of the coating was found; o: only some of the samples tested were found to peel off the coating;

^: peeling of the coating was found only locally; and

×: The coating was observed to peel off on the entire surface.

It should be noted that the above column shows the results of a test in which an adhesive tape applied to a width of 1 cm and peeled off immediately.

In addition, the one given in the table above

Thickness of the oxide layer determined using an ellipsometer, as mentioned earlier.

2Q Have in the "Image Quality" column of the same table the symbols used have the following meaning:

<s>: High density with a reflection density of 1.0 or above and an advantageous general image quality

25 ^ity?

o: normal density with a reflection density between

0.6 and 1.0, but still advantageous in general Picture quality;

A: low density with a reflection density of not 2Q more than 0.6 and a pretty bad general one Picture quality.

From the above results it can be seen that, if in accordance with the embodiment of the invention described herein gg an oxide layer on a substrate with a surface roughness of 0.05 to 1.5 uras and if photoreceptor layers applied to it, the electrostatic properties, the photosensitivity, the

fr

:: · :::: - ::. 332 IbJ

Image quality and the adhesion of the coating to the substrate are all advantageous and that by using an additional Blocking layer the electrostatic properties can be further improved. When the surface roughness of the substrate, however, is below 0.05 wmS the adhesion of the coating to the substrate is poor, while when the surface roughness is over 1.5 µmS, a significant fall of darkness occurs.

The invention has been described above with reference to preferred embodiments explained in more detail, however, it is It goes without saying for the person skilled in the art that it is by no means restricted to it, but that this is done in many ways Aspects can be changed and modified without thereby breaking the framework of the present invention is left.

Claims (25)

Claims 1. photoreceptor, characterized by a 5 to 40 \ photosensitive thick layer on the basis of amorphous silicon on a substrate, which has been treated to achieve a surface roughness of 0.05 to 1.5 IiTCiS. 15 · 2. Photoreceptor according to claim 1, characterized in that that a 50 Å to 1 μm thick charge blocking layer is provided as the innermost layer closest to the surface of the substrate. 3. Photoreceptor according to claim 2, characterized in that that the charge blocking layer is made of an insulating material. 4. Photoreceptor according to claim 2, characterized in that that the charge blocking layer consists of a semiconducting material based on amorphous silicon, that with a high concentration of an element or elements of group IHA or VA of the period 30 see system of elements is doped. 5. Photoreceptor according to claim 4, characterized in that that a charge transport layer made of hydrogenated and / or fluorinated amorphous silicon carbide or hydrogenated and / or fluorinated amorphous silicon nitride is provided on the charge blocking layer and that in addition a light-sensitive layer based on amor- -2- phem silicon is provided on the charge transport layer. 6. Photoreceptor according to one of claims 1 to 5, characterized in that the surface of the substrate has been surface treated using one of the following three methods: a) Treatment with a grindstone in contact with the cylindrical circumferential surface of the substrate, wherein the grindstone is advanced in a prescribed direction and both are on their own Axles are driven to grind and smooth the cylindrical surface (finish); b) Treatment with a whetstone, which by comparatively weak forces are pressed against the surface of the substrate, the grindstone is caused to vibrate with a small amplitude and at the same time in a prescribed direction is advanced to the surface of the substrate 20 to sand and smooth (finish); and c) treating the surface of the substrate by blowing abrasive materials to grind the surface and smooth. 7. Photoreceptor according to one of claims 1 to 6, characterized in that by anodic oxidation on the surface of the substrate a 50 to 50Oo8 thick oxide layer is applied and that on the oxide layer the photosensitive layer is applied. 8. Photoreceptor according to claim 7, characterized in that that a charge transport layer made of hydrogenated and / or fluorinated amorphous silicon carbide or hydrogenated and / or fluorinated amorphous silicon nitride and the photosensitive layer of hydrogenated and / or fluorinated amorphous silicon or hydrogenated and / or fluorinated amorphous silicon-germanium in that order are applied one after the other to the oxide layer. O β * * e β »β · e θ * β »ft -3- 9. Photoreceptor according to claim 7 or 8, characterized in that a 50 S to 1 ym thick charge blocking layer made of hydrogenated and / or fluorinated amorphous silicon, hydrogenated and / or fluorinated amorphous silicon carbide or hydrogenated and / or fluorinated amorphous silicon nitride, doped with a high Concentration of one or more elements of group IIIA or VA of the Periodic Table of the Elements between the oxide layer and the photosensitive layer is arranged. 10. Photoreceptor according to one of claims 7 to 9, characterized in that the substrate consists of aluminum or an aluminum alloy. . ■ ■ 11. Photoreceptor according to one of claims 1 to 10, characterized in that the substrate is made of an aluminum alloy which contains either 1.0 to 1.5 wt% manganese or 2.2 to 5.0 wt% magnesium. 12. Photoreceptor according to claim 11, characterized in that that the substrate after the treatment (smoothing) to achieve the surface roughness mentioned Surface oxidation is subjected to produce an aluminum oxide layer thereon. 13. Photorezptor according to claim 11 or 12, characterized in that the innermost layer below the light-sensitive layer based on amorphous silicon a 50 8 to 1 μm thick charge blocking layer is provided. 14. Photorezptor according to claim 13, characterized in that the charge blocking layer consists of an insulating Material. 15. Photorezptor according to claim 13, characterized in that the charge blocking layer consists of a semi- conductive material based on amorphous silicon, which with a high concentration of one or several elements of group IIIA or VA of the periodic System of the elements is doped. 16. Photorezptor according to claim 15, characterized in that one on the charge blocking layer Charge transport layer made of hydrogenated and / or fluorinated amorphous silicon carbide or hydrogenated and / or fluorinated amorphous silicon nitride is arranged and that the photosensitive layer based on amorphous Silicon is arranged on the charge transport layer. 17. Photoreceptor according to one of claims 11 to 16, characterized in that the surface of the substrate is ground by one of the three following methods and has been treated (smoothed): a) treatment with a grindstone in contact with the cylindrical peripheral surface of the substrate, the grindstone being advanced in a prescribed direction _and both being driven on their own axes to grind and smooth the cylindrical peripheral surface; b) Treatment with a whetstone, which is equally small forces are pressed against the surface of the substrate, the grindstone in Low amplitude vibration is displaced and simultaneously in a prescribed direction is advanced to the surface of the substrate 30 to grind and smooth (treat); and c) treating the surface of the substrate by blowing abrasive materials to the surface grind and smooth (treat). 18. Photoreceptor according to one of claims 11 to 17, characterized in that the aluminum oxide layer is made 50 to 5000 8 thick by aniodic oxidation has been. 19. Photoreceptor according to one of claims 11 to 17, characterized in that the aluminum oxide layer by a surface treatment with glow discharges 15 to 1000 A thick has been made. 5 20. Photoreceptor according to one of claims 1 to 19, characterized in that the surface of the substrate, this up to a surface roughness of 0.05 to 1.5 μΐη3 has been treated (smoothed), is surface treated with glow discharges to produce an oxide layer thereon and that also using the glow discharge decomposition process a photosensitive layer based on amorphous silicon is produced on the oxide layer will. 21. Photoreceptor according to claim 20, characterized in that that a charge blocking layer is arranged between the oxide layer and the photosensitive layer is that of hydrogenated and / or fluorinated amorphous silicon, hydrogenated and / or fluorinated amorphous silicon carbide or hydrogenated and / or fluorinated amorphous silicon nitride doped with a high concentration of one or more elements of group IIIA or VA of the Periodic Table of the Elements. 22. Photoreceptor according to claim 20 or 2i, characterized characterized in that the charge transport layer consists of of hydrogenated and / or fluorinated amorphous silicon carbide or hydrogenated and / or fluorinated ³ ^ amorphous silicon nitride, and the photosensitive layer have been applied successively to the oxide layer, the photosensitive layer of hydrogenated and / or fluorinated amorphous silicon or hydrogenated and / or fluorinated amorphous silicon-germanium. 35 23. Photoreceptor according to one of claims 20 to 22, characterized in that the substrate consists of aluminum or an aluminum alloy. • * I -6- 24 · Photoreceptor according to one of Claims 20 to 23, characterized in that the surface of the substrate has been sanded and smoothed (treated) using one of the following three methods: a) treatment with a grindstone in contact with the cylindrical peripheral surface of the substrate, wherein the grindstone is advanced in a prescribed direction, both on their own Axles are driven to grind and smooth (treat) the cylindrical peripheral surface; b) Treatment with a grindstone, which by comparatively low forces are pressed against the surface of the substrate, the grindstone in Vibrations with low amplitude is offset and at the same time moved forward in a prescribed direction is used to grind and smooth (treat) the surface of the substrate; and c) treating the surface of the substrate by blowing abrasive materials to the surface 20 grind and smooth (treat). 25. A photoreceptor according to any one of claims 1 to 24, characterized in that it has the shape of a drum.
25th