DE3269761D1 - Process for the liquid epitaxial deposition of a ternary compound - Google Patents

Process for the liquid epitaxial deposition of a ternary compound

Info

Publication number
DE3269761D1
DE3269761D1 DE8282402377T DE3269761T DE3269761D1 DE 3269761 D1 DE3269761 D1 DE 3269761D1 DE 8282402377 T DE8282402377 T DE 8282402377T DE 3269761 T DE3269761 T DE 3269761T DE 3269761 D1 DE3269761 D1 DE 3269761D1
Authority
DE
Germany
Prior art keywords
epitaxial deposition
ternary compound
liquid epitaxial
liquid
ternary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282402377T
Other languages
German (de)
English (en)
Inventor
Jean-Louis Benchimol
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BENCHIMOL JEAN LOUIS
Original Assignee
BENCHIMOL JEAN LOUIS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BENCHIMOL JEAN LOUIS filed Critical BENCHIMOL JEAN LOUIS
Application granted granted Critical
Publication of DE3269761D1 publication Critical patent/DE3269761D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8282402377T 1981-12-28 1982-12-23 Process for the liquid epitaxial deposition of a ternary compound Expired DE3269761D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8124291A FR2519032A1 (fr) 1981-12-28 1981-12-28 Procede de depot par epitaxie en phase liquide d'un compose ternaire

Publications (1)

Publication Number Publication Date
DE3269761D1 true DE3269761D1 (en) 1986-04-10

Family

ID=9265424

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282402377T Expired DE3269761D1 (en) 1981-12-28 1982-12-23 Process for the liquid epitaxial deposition of a ternary compound

Country Status (7)

Country Link
US (1) US4532001A (https=)
EP (1) EP0083540B1 (https=)
JP (1) JPS58120594A (https=)
CA (1) CA1217410A (https=)
DE (1) DE3269761D1 (https=)
FR (1) FR2519032A1 (https=)
NO (1) NO824327L (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028799B2 (ja) * 1982-04-28 1985-07-06 富士通株式会社 液相エピタキシヤル成長方法
FR2583782A1 (fr) * 1985-06-24 1986-12-26 Slempkes Serge Procede de depot par epitaxie en phase liquide sur un substrat, d'un alliage au moins quaternaire, et dispositif semi-conducteur comportant un tel alliage
JPH0214894A (ja) * 1988-06-30 1990-01-18 Nec Corp 液相エピタキシャル成長方法
US6613162B1 (en) * 1999-10-25 2003-09-02 Rensselaer Polytechnic Institute Multicomponent homogeneous alloys and method for making same
US7641733B2 (en) * 2004-09-01 2010-01-05 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
CN115216844B (zh) * 2022-04-25 2023-09-15 福州大学 一种中远红外非线性光学晶体硫磷镉的制备及应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2151171A5 (en) * 1971-08-23 1973-04-13 Radiotechnique Compelec Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium
BE795005A (fr) * 1972-02-09 1973-05-29 Rca Corp Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
FR2183522A1 (en) * 1972-05-08 1973-12-21 Radiotechnique Compelec Epitaxial growth of ternary cpd - by isothermal crystallisation, with control over proportions of components in final prod
JPS53148388A (en) * 1977-05-31 1978-12-23 Kokusai Denshin Denwa Co Ltd Method of producing compound semiconductor crystal
US4401487A (en) * 1980-11-14 1983-08-30 Hughes Aircraft Company Liquid phase epitaxy of mercury cadmium telluride layer

Also Published As

Publication number Publication date
FR2519032B1 (https=) 1984-04-06
US4532001A (en) 1985-07-30
NO824327L (no) 1983-06-29
JPS58120594A (ja) 1983-07-18
EP0083540A1 (fr) 1983-07-13
CA1217410A (en) 1987-02-03
FR2519032A1 (fr) 1983-07-01
EP0083540B1 (fr) 1986-03-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee