DE3266277D1 - Process of forming a thin glass film on a semiconductor substrate - Google Patents

Process of forming a thin glass film on a semiconductor substrate

Info

Publication number
DE3266277D1
DE3266277D1 DE8282400446T DE3266277T DE3266277D1 DE 3266277 D1 DE3266277 D1 DE 3266277D1 DE 8282400446 T DE8282400446 T DE 8282400446T DE 3266277 T DE3266277 T DE 3266277T DE 3266277 D1 DE3266277 D1 DE 3266277D1
Authority
DE
Germany
Prior art keywords
forming
semiconductor substrate
glass film
thin glass
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282400446T
Other languages
English (en)
Inventor
William I Lehrer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Application granted granted Critical
Publication of DE3266277D1 publication Critical patent/DE3266277D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/16—Compositions for glass with special properties for dielectric glass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Formation Of Insulating Films (AREA)
  • Glass Compositions (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8282400446T 1981-03-16 1982-03-12 Process of forming a thin glass film on a semiconductor substrate Expired DE3266277D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24398981A 1981-03-16 1981-03-16

Publications (1)

Publication Number Publication Date
DE3266277D1 true DE3266277D1 (en) 1985-10-24

Family

ID=22920948

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282400446T Expired DE3266277D1 (en) 1981-03-16 1982-03-12 Process of forming a thin glass film on a semiconductor substrate

Country Status (4)

Country Link
EP (1) EP0060783B1 (de)
JP (1) JPS57160936A (de)
CA (1) CA1201582A (de)
DE (1) DE3266277D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539744A (en) * 1984-02-03 1985-09-10 Fairchild Camera & Instrument Corporation Semiconductor planarization process and structures made thereby
JPH0782999B2 (ja) * 1991-04-15 1995-09-06 株式会社半導体プロセス研究所 気相成長膜の形成方法、半導体製造装置、および半 導体装置
EP0516334A3 (en) * 1991-05-30 1992-12-09 American Telephone And Telegraph Company Method of etching a window in a dielectric layer on an integrated circuit and planarization thereof
US6768856B2 (en) 2001-02-09 2004-07-27 Corning Incorporated High germanium content waveguide materials

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3542572A (en) * 1968-06-24 1970-11-24 Corning Glass Works Germania-silica glasses
US4196232A (en) * 1975-12-18 1980-04-01 Rca Corporation Method of chemically vapor-depositing a low-stress glass layer

Also Published As

Publication number Publication date
JPS57160936A (en) 1982-10-04
EP0060783A1 (de) 1982-09-22
CA1201582A (en) 1986-03-11
JPH0144650B2 (de) 1989-09-28
EP0060783B1 (de) 1985-09-18

Similar Documents

Publication Publication Date Title
GB2039678B (en) Deposition of films on substrates
EP0120408A3 (en) Process for coating a transparent substrate
JPS5621383A (en) Method of manufacturing thin film substrate impage coupling device
DE3166951D1 (en) Process of forming recessed dielectric regions in a silicon substrate
DE3560351D1 (en) Process for depositing a thin transparent layer on the surface of optical elements
EP0249211A3 (en) Method of manufacturing a thin film transistor
GB2169442B (en) Forming thin semiconductor films
IL51829A0 (en) Process for forming a metal or metal compound coating on a face of a glass substrate
EP0015694A3 (en) Method for forming an insulating film on a semiconductor substrate surface
EP0160248A3 (en) Method of forming thin photoresist lines on the surface of a substrate
JPS51135919A (en) Method of forming protecive film on glass substrate
IL64058A (en) Process and apparatus for forming a layer of mercury cadmium telluride on a substrate
EP0069580A3 (en) Method of producing thin films of silicon
EP0174553A3 (en) Method for production of silicon thin film piezoresistive devices
DE3371801D1 (en) A substrate for manufacturing single crystal thin films
DE3274700D1 (en) Method of forming thin film transistors
GB2193976B (en) Process for depositing a polysilicon film on a substrate
DE3277046D1 (en) Method of producing a metallic thin film on a semiconductor body
JPS57156032A (en) Method of forming thin film
JPS56153340A (en) Method of forming photosensitive layer on plastic substrate
DE3276439D1 (en) Process for depositing films on both sides of a plurality of thin substrates
GB2192197B (en) Method of forming a metal film on the surface of a substrate metal
DE3266277D1 (en) Process of forming a thin glass film on a semiconductor substrate
GB2054264B (en) Deposition and etching process for making semi-conductor components
EP0208459A3 (en) Process for the chemical vapour deposition of a thin film of oxide on a silicon wafer

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT