DE3266163D1 - Light detector device, adapted charge transfer reader and imager using such a device - Google Patents

Light detector device, adapted charge transfer reader and imager using such a device

Info

Publication number
DE3266163D1
DE3266163D1 DE8282401040T DE3266163T DE3266163D1 DE 3266163 D1 DE3266163 D1 DE 3266163D1 DE 8282401040 T DE8282401040 T DE 8282401040T DE 3266163 T DE3266163 T DE 3266163T DE 3266163 D1 DE3266163 D1 DE 3266163D1
Authority
DE
Germany
Prior art keywords
imager
charge transfer
light detector
transfer reader
detector device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282401040T
Other languages
German (de)
English (en)
Inventor
Marc Arques
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3266163D1 publication Critical patent/DE3266163D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H10F39/1575—CCD or CID infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/452—Input structures
DE8282401040T 1981-06-23 1982-06-08 Light detector device, adapted charge transfer reader and imager using such a device Expired DE3266163D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8112296A FR2508234A1 (fr) 1981-06-23 1981-06-23 Ensemble detecteur photonique, lecteur a transfert de charges adapte et cible de prise de vues utilisant un tel ensemble

Publications (1)

Publication Number Publication Date
DE3266163D1 true DE3266163D1 (en) 1985-10-17

Family

ID=9259775

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282401040T Expired DE3266163D1 (en) 1981-06-23 1982-06-08 Light detector device, adapted charge transfer reader and imager using such a device

Country Status (5)

Country Link
US (1) US4554571A (enExample)
EP (1) EP0068947B1 (enExample)
JP (1) JPS584971A (enExample)
DE (1) DE3266163D1 (enExample)
FR (1) FR2508234A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3371454D1 (en) * 1982-12-21 1987-06-11 Thomson Csf Method for scanning a line-transfer photosensitive device, and apparatus for carrying out the method
US4812668A (en) * 1986-04-17 1989-03-14 Honeywell Inc. Multiplexer elements for photovoltaic detectors
JPH0766961B2 (ja) * 1988-10-07 1995-07-19 三菱電機株式会社 固体撮像素子
US5051797A (en) * 1989-09-05 1991-09-24 Eastman Kodak Company Charge-coupled device (CCD) imager and method of operation
EP0544260A1 (en) * 1991-11-25 1993-06-02 Eastman Kodak Company Antiblooming structure for CCD image sensor
FR2731569B1 (fr) * 1995-03-07 1997-04-25 Thomson Tubes Electroniques Dispositif de recopie de tension a grande linearite
US7199409B2 (en) * 2004-08-26 2007-04-03 Massachusetts Institute Of Technology Device for subtracting or adding charge in a charge-coupled device
US9029770B2 (en) * 2009-01-16 2015-05-12 Raytheon Company Enhanced direct injection circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2501934C2 (de) * 1974-01-25 1982-11-11 Hughes Aircraft Co., Culver City, Calif. Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens
US4087833A (en) * 1977-01-03 1978-05-02 Reticon Corporation Interlaced photodiode array employing analog shift registers
US4112316A (en) * 1977-04-28 1978-09-05 Westinghouse Electric Corp. Charge coupled device circuit with increased signal bandwidth
US4196508A (en) * 1977-09-01 1980-04-08 Honeywell Inc. Durable insulating protective layer for hybrid CCD/mosaic IR detector array
US4150304A (en) * 1978-03-14 1979-04-17 Hughes Aircraft Company CCD Comparator
NL7902968A (nl) * 1979-04-17 1980-10-21 Philips Nv Werkwijze voor het transporteren van lading en inrich- ting voor het uitvoeren van de werkwijze.
JPS5678364U (enExample) * 1979-11-14 1981-06-25

Also Published As

Publication number Publication date
EP0068947B1 (fr) 1985-09-11
JPH0434302B2 (enExample) 1992-06-05
FR2508234A1 (fr) 1982-12-24
FR2508234B1 (enExample) 1985-01-25
JPS584971A (ja) 1983-01-12
EP0068947A1 (fr) 1983-01-05
US4554571A (en) 1985-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition