DE3215149A1 - Doping solution for semiconductors - Google Patents

Doping solution for semiconductors

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Publication number
DE3215149A1
DE3215149A1 DE19823215149 DE3215149A DE3215149A1 DE 3215149 A1 DE3215149 A1 DE 3215149A1 DE 19823215149 DE19823215149 DE 19823215149 DE 3215149 A DE3215149 A DE 3215149A DE 3215149 A1 DE3215149 A1 DE 3215149A1
Authority
DE
Germany
Prior art keywords
doping solution
doping
solution
solution according
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19823215149
Other languages
German (de)
Inventor
Richard Dipl.-Phys. 7410 Reutlingen Spitz
Roswitha 7417 Pfullingen Ziefle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE19823215149 priority Critical patent/DE3215149A1/en
Publication of DE3215149A1 publication Critical patent/DE3215149A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

A doping solution for semiconductors is proposed which contains tetraethyl orthosilicate, ethanol, water, at least one dopant, and an acid as catalyst. The pH of the solution may be between 1 and 4.

Description

Dotierlösung für HalbleiterDoping solution for semiconductors

Stand der Technik Die Erfindung geht aus von einer Dotierlösung nach der Gattung des Hauptanspruchs.PRIOR ART The invention is based on a doping solution the genre of the main claim.

Aus der DE-PS 23 40 111 ist bereits eine Dotierlösung dieser Art bekannt. Diese Lösung bildet nach dem Aufschleudern auf die Siliziumplatte einen weichen Überzug, der anschließend in einem Trockenofen bei einer Temperatur von 200 C gehärtet werden muß. Erst danach ist der Dotierfilm so hart, daß er durch das übliche handling vor der Diffusion nicht mehr beschädigt werden kann. Vor dem Härten ist aber der weiche Film empfindlich gegen Beschädigungen. Beschädigungen führen aber andererseits zu Ungleichmäßigkeiten bei der anschließend auszuführenden Diffusion und beeinflussen daher die Ausbeute nachteilhaft.A doping solution of this type is already known from DE-PS 23 40 111. After being spun onto the silicon plate, this solution forms a soft one Coating that is then hardened in a drying oven at a temperature of 200 C. must become. Only then is the doping film so hard that it can be damaged by normal handling can no longer be damaged prior to diffusion. But before hardening is that soft film sensitive to damage. On the other hand, damage leads to damage to irregularities in the diffusion to be carried out afterwards and influence them hence the yield is disadvantageous.

Vorteile der Erfindung Die erfindungsgemäße Dotierlösung mit dem kennzeichnenden Merkmal des Hauptanspruchs bietet demgegenüber den Vorteil, daß die Filme bereits während des Aufschleuderns der Lösungen trocknen.Advantages of the invention The doping solution according to the invention with the characterizing Feature of the main claim has the advantage that the Movies dry while the solutions are being spun on.

Nach dem AuSschleudern, das typisch 10 Sekunden lang bei 3 000 Umdrehungen pro Minute erfolgt, sind die Filme hart und deshalb gegen Beschädigungen geschützt.After centrifuging, typically for 10 seconds at 3,000 revolutions per minute, the films are hard and therefore protected against damage.

Beschreibung des Ausführungsbeispiels Die Dotierlösungen gemäß der Erfindung wurden speziell zur Herstellung von pn-Ubergängen in Siliziumplatten entwickelt und enthalten deshalb entweder eine Bor- oder eine Phosphorverbindung. Sie sind zum Aufschleudern auf Siliziumplatten geeignet, das in an sich bekannter Weise ausgeführt wird.Description of the exemplary embodiment The doping solutions according to FIG Invention were specially developed for the production of pn junctions in silicon wafers and therefore contain either a boron or a phosphorus compound. they are suitable for spin-coating on silicon plates, which is carried out in a manner known per se will.

Außer dem Dotierungsstoff enthalten die Lösungen einen Filmbildner, der in folgender Weise hergestellt wird: Tetraetylorthosilikat und Ethanol (absolut) werden in verschiedenen Verhältnissen gemischt (Gewichtsverhältnis Tetraethylorthosilikat: Ethanol zwischen 5 : 1 und 1 : 5). Dann wird als Katalysator eine 37prozentige wässrige Salzsäurelösung zugesetzt, und zwar 0,4 ml HCl auf 100 g Tetraethylorthosilikat. Außerdem werden 17 g Wasser auf 100 g Tetraethylorthosilikat zugegeben.In addition to the dopant, the solutions contain a film former, which is produced in the following way: tetraethyl orthosilicate and ethanol (absolute) are mixed in different proportions (weight ratio tetraethyl orthosilicate: Ethanol between 5: 1 and 1: 5). Then a 37 percent aqueous catalyst is used Hydrochloric acid solution added, namely 0.4 ml of HCl to 100 g of tetraethylorthosilicate. In addition, 17 g of water are added to 100 g of tetraethyl orthosilicate.

In diese fertige Jilmbildnermischung wird die Bor- bzw. Phosphorverbindung eingerührt. Als Borverbindung wird Trimethylborat (C3H9B03) verwendet. Die Konzentration beträgt dabei bis zu 40 g Trimethylborat pro 100 g Dotierlösung. Als Phosphorverbindung wird Phosphorpentoxid (P205) verwendet. Die Konzentration beträgt dabei bis zu 15 gP205 pro 100 g D)otierlösung.The boron or phosphorus compound is incorporated into this finished film-forming mixture stirred in. Trimethyl borate (C3H9B03) is used as the boron compound. The concentration is up to 40 g trimethyl borate per 100 g doping solution. As a phosphorus compound Phosphorus pentoxide (P205) is used. The concentration is up to 15 gP205 per 100 g of D) solution.

In die Phosphordotierlösung kann zur Einstellung der Schaltzeit des Bauelements Nickelchlorid beigemischt werden (6,5 g Nicl2 . 6H2o pro 100 g Dotierlösung).In the phosphorus doping solution to adjust the switching time of the Component nickel chloride are added (6.5 g Nicl2.6H2o per 100 g doping solution).

Der besondere Vorteil bei der Herstellung der Phosphordotierlösung besteht darin, daß Phosphorpentoxid direkt zum Filmbildnergemisch hinzugefügt werden kann, ohne daß dazu eine aufwendige Kühlung mit Trockeneis oder die Beimischung inerter Lösungsmittel wie Äther notwendig wäre. Auch ist der Umweg über Phosphorsäuren nicht notwendig.The particular advantage in the production of the phosphorus doping solution consists in adding phosphorus pentoxide directly to the film former mixture can without the need for costly cooling with dry ice or admixture inert solvent such as ether would be necessary. Also the detour is via phosphoric acids unnecessary.

Der Vorteil der erfindungsgemäßen Dotierlösung gegenüber bekannten Dotierlösungen besteht in dem besonders guten Trocknungsverhalten der Lösung. Wesentlich für dieses Trocknungsverhalten ist in der Zusammensetzung des ilmbildners der Gehalt an Säure. Höhere Säuregehalte führen dabei zu schnellerer Trocknung. Die katalytische Wirkung der Wasserstoffionen bzw.The advantage of the doping solution according to the invention over known ones Doping solutions consist in the particularly good drying behavior of the solution. Essential for this drying behavior is the content in the composition of the film former of acid. Higher acid contents lead to faster drying. The catalytic Effect of the hydrogen ions or

Hydroniumionen, die durch die Säure geliefert werden, besteht dabei darin, daß das Tetraethylorthosilikat mit Wasser zu Alkohol und Siliziumdioxid umgesetzt wird. Der Alkohol verdunstet, und das Siliziumdioxid bildet den harten Film, in den der Dotierungsstoff eingebettet ist.Hydronium ions supplied by the acid exist in that the tetraethylorthosilicate reacted with water to form alcohol and silicon dioxide will. The alcohol evaporates, and the silicon dioxide forms the hard film in which the dopant is embedded.

Claims (6)

Ansprüche 1. Dotierlösung für Iialbleiter, die Tetraethylorthosilikat, Ethanol, Wasser und mindestens einen Dotierungsstoff enthält, dadurch gekennzeichnet, daß der Lösung als Katalysator eine Säure zugesetzt ist.Claims 1. Doping solution for Iialleiter, the tetraethyl orthosilicate, Contains ethanol, water and at least one dopant, characterized in that that an acid is added to the solution as a catalyst. 2. Dotierlösung nach Anspruch 1, dadurch gekennzeichnet, daß ihr pH-Wert zwischen 1 und )# liegt.2. doping solution according to claim 1, characterized in that its pH value is between 1 and) #. 3. Dotierlösung nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß als Säure Salzsäure verwendet ist.3. doping solution according to claim 1 or 2, characterized in that hydrochloric acid is used as the acid. 4. Dotierlösung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß als Dotierungsstoff Bor verwendet ist.4. doping solution according to one of claims 1 to 3, characterized in that that boron is used as a dopant. 5. Dotierlösung nach einem der Anspruche 1 bis 3, dadurch gekennzeichnet, daß als Dotierungsstoff Phosphor verwendet ist.5. doping solution according to one of claims 1 to 3, characterized in that that phosphorus is used as a dopant. 6. Dotierlösung nach Anspruch 5, dadurch gekennzeichnet, daß sie zur Einstellung der Schaltzeit des aus dem Halbleiter zu bildenden Bauelements Nickelionen enthält.6. doping solution according to claim 5, characterized in that it is used for Adjustment of the switching time of the component nickel ions to be formed from the semiconductor contains.
DE19823215149 1982-04-23 1982-04-23 Doping solution for semiconductors Withdrawn DE3215149A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19823215149 DE3215149A1 (en) 1982-04-23 1982-04-23 Doping solution for semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823215149 DE3215149A1 (en) 1982-04-23 1982-04-23 Doping solution for semiconductors

Publications (1)

Publication Number Publication Date
DE3215149A1 true DE3215149A1 (en) 1983-10-27

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Family Applications (1)

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DE19823215149 Withdrawn DE3215149A1 (en) 1982-04-23 1982-04-23 Doping solution for semiconductors

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DE (1) DE3215149A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0206938A2 (en) * 1985-06-21 1986-12-30 Fairchild Semiconductor Corporation Germanosilicate spin-on glasses
DE19500392A1 (en) * 1995-01-09 1996-07-18 Siemens Ag Integrated circuit structure (TI2> has diffusion zone formed in wall of groove fully enclosing silicon island in monocrystalline surface layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0206938A2 (en) * 1985-06-21 1986-12-30 Fairchild Semiconductor Corporation Germanosilicate spin-on glasses
EP0206938A3 (en) * 1985-06-21 1988-02-10 Fairchild Semiconductor Corporation Germanosilicate spin-on glasses
US4935095A (en) * 1985-06-21 1990-06-19 National Semiconductor Corporation Germanosilicate spin-on glasses
DE19500392A1 (en) * 1995-01-09 1996-07-18 Siemens Ag Integrated circuit structure (TI2> has diffusion zone formed in wall of groove fully enclosing silicon island in monocrystalline surface layer
US5747867A (en) * 1995-01-09 1998-05-05 Siemens Aktiengesellschaft Integrated circuit structure with interconnect formed along walls of silicon island

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