DE3213789A1 - Method of increasing the efficiency of CdSe thin-film solar cells - Google Patents
Method of increasing the efficiency of CdSe thin-film solar cellsInfo
- Publication number
- DE3213789A1 DE3213789A1 DE19823213789 DE3213789A DE3213789A1 DE 3213789 A1 DE3213789 A1 DE 3213789A1 DE 19823213789 DE19823213789 DE 19823213789 DE 3213789 A DE3213789 A DE 3213789A DE 3213789 A1 DE3213789 A1 DE 3213789A1
- Authority
- DE
- Germany
- Prior art keywords
- efficiency
- solar cells
- film solar
- increasing
- cdse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 239000010409 thin film Substances 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000012212 insulator Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Verfahren zur Erhöhung des Wirkungsgrades Process for increasing the efficiency
von CdSe-Dünnschicht-Solarzellen Die Erfindung betrifft ein Verfahren zur Erhöhung des Wirkungsgrades von CdSe-Dünnschicht-Solarzellen. of CdSe thin-film solar cells The invention relates to a method to increase the efficiency of CdSe thin-film solar cells.
Metall/Isolator/Halbleiter-Dünnschicht-Solarzellen auf der Basis von CdSe sind bekannt (D. Bonnet, E. Rickus, "The CdSe Thin Film Solar Cell", Proc. 14th Photovoltaic Specialists Conf., 1980, S. 629; "Entwicklung einer Cadmiumselenid-Dünnschicht-Solarzelle'1, Statusbericht Sonnenenergie 1980, VDI-Verlag, S. 1055). Solche Solarzellen bestehen aus einem Rückkontakt aus Chrom, einer 2 bis 3 pm dicken CdSe-Schicht, einer 4 bis 5 nm dicken ZnSe-Schicht, einem Schottkykontakt aus Gold und einer Antireflexschicht. Alle Schichten können z.B. im Hochvakuum aufgedampft und anschließend bei etwa 200 0C getempert werden.Metal / insulator / semiconductor thin-film solar cells on the basis of CdSe are known (D. Bonnet, E. Rickus, "The CdSe Thin Film Solar Cell", Proc. 14th Photovoltaic Specialists Conf., 1980, p. 629; "Development of a cadmium selenide thin-film solar cell'1, Status report solar energy 1980, VDI-Verlag, p. 1055). Such solar cells exist from a back contact made of chromium, a 2 to 3 pm thick CdSe layer, a 4 to 5 nm thick ZnSe layer, a Schottky contact made of gold and an anti-reflective layer. All layers can, for example, be vapor-deposited in a high vacuum and then at around 200 0C.
Der vorliegenden Erfindung liegt die Aufgabe zugrunde, ein wirtschaftliches und in den Herstellungsprozeß ohne technischen Aufwand integrierbares Verfahren zu entwickeln, mit dem die Effizienz von Metall/Isolator/Halbleiter-Dünnschicht-Solarzellen auf der Basis von CdSe wesentlich erhöht werden kann.The present invention is based on the object of an economical and a process that can be integrated into the manufacturing process without any technical effort to develop the efficiency of metal / insulator / semiconductor thin film solar cells can be increased significantly on the basis of CdSe.
Es hat sich gezeigt, daß sich diese Aufgabe lösen läßt, wenn zumindest die aktive Fläche der Solarzelle bei Raumtemperatur mit Quanten einer Energie von größer als 3,5 eV bestrahlt wird. Die Solarzelle wird vorzugsweise nach vorherigem Tempern mit UV-Licht der Wellenlänge von etwa 250 bis etwa 350 nm bestrahlt. Die Sättigung ist normalerweise mit einer Bestrahlungsdosis von ca. 1,5 Ws/cm2 erreicht.It has been shown that this problem can be solved, if at least the active area of the solar cell at room temperature with quanta of energy greater than 3.5 eV is irradiated. The solar cell is preferably after previous Annealing is irradiated with UV light of a wavelength of about 250 to about 350 nm. the Saturation is normally reached with an irradiation dose of approx. 1.5 Ws / cm2.
Die aus der Strahlung resultierte Erhöhung des Wirkungsgrades ist zeitlich stabil und kann nur durch Temperaturbehandlung über 150 0C rückgängig gemacht werden. Bei der normalen Betriebstemperatur von Solarzellen von weniger als 100 0C treten demzufolge keine Stabilitätsprobleme auf.The increase in efficiency resulting from the radiation is stable over time and can only be reversed by treating the temperature above 150 ° C will. At the normal operating temperature of solar cells of less than 100 0C there are therefore no stability problems.
Die Erfindung wird anhand von einem lediglich einen Ausführungsweg darstellenden Beispiel näher erläutert: Auf einem Substrat werden in an sich bekannter Weise der Rückkontakt, die CdSe-Schicht (ca. 2 ihm), die ZnSe-Schicht (ca. 5 nm), der Goldkontakt, das Stromabnahmegitter und die Antireflexschicht (ZnS) aufgedampft. Nach einer Temperaturbehandlung bei 200 0C erreicht die 1 cm2 große Zelle bei simulierter Sonnenstrahlung von 100 nW/cm2 die folgenden charakteristischen Daten: Leerlaufspannung (Uoc) : 0,5 V Kurzschlußstrom (1 ) : 17,0 mA sc Füllfaktor (FF) : 40 % Wirkungsgrad (#) : 3,4 % Durch Bestrahlung der gesamten aktiven Zellfläche mit UV-Licht aus einer kommerziellen Xenon-Hochdrucklampe verbessern sich die Zeilparameter. Bei einer mittleren Bestrahen lungsintensität von 1,5 mW/cm2 erreichen sie nach ca 15 min eine Sättigung und haben danach die folgenden Werte: Leerlaufspannung (U ) : 0,575 V cc Kurzschlußstrom (Isc) : 18,2 mA Füllfaktor (FF) : 42,5 % Wirkungsgrad (#) : 4,4 %.The invention is carried out in one way only illustrative example explained in more detail: On a substrate are known per se Way the back contact, the CdSe layer (about 2 him), the ZnSe layer (about 5 nm), the gold contact, the current collection grid and the anti-reflective coating (ZnS) are vapor-deposited. After a temperature treatment at 200 ° C., the 1 cm2 cell reaches the simulated Solar radiation of 100 nW / cm2 the following characteristic data: Open circuit voltage (Uoc): 0.5 V short-circuit current (1): 17.0 mA sc Fill factor (FF): 40% efficiency (#): 3.4% By irradiating the entire active cell area with UV light from a commercial xenon high-pressure lamps improve the line parameters. At a They reach an average irradiation intensity of 1.5 mW / cm2 after approx. 15 min saturation and then have the following values: Open circuit voltage (U): 0.575 V cc short-circuit current (Isc): 18.2 mA Fill factor (FF): 42.5% Efficiency (#): 4.4%.
Der Wirkungsgrad der CdSe-Metall/Isolator/Halbleiter-Dünnschichtzelle wurde demzufolge um ca. 30 % erhöhtThe efficiency of the CdSe metal / insulator / semiconductor thin film cell was consequently increased by approx. 30%
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823213789 DE3213789A1 (en) | 1982-04-15 | 1982-04-15 | Method of increasing the efficiency of CdSe thin-film solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823213789 DE3213789A1 (en) | 1982-04-15 | 1982-04-15 | Method of increasing the efficiency of CdSe thin-film solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3213789A1 true DE3213789A1 (en) | 1983-10-20 |
| DE3213789C2 DE3213789C2 (en) | 1989-03-02 |
Family
ID=6160923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823213789 Granted DE3213789A1 (en) | 1982-04-15 | 1982-04-15 | Method of increasing the efficiency of CdSe thin-film solar cells |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3213789A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1000935B (en) * | 1952-09-17 | 1957-01-17 | Siemens Ag | Forming process for the permanent improvement of the electrical surface properties of a semiconductor, in particular for increasing the blocking resistance and reducing the forward resistance of electrically asymmetrically conductive semiconductor-crystal systems |
| DE2542194A1 (en) * | 1974-09-23 | 1976-04-01 | Baldwin Co D H | METHOD FOR MANUFACTURING PHOTO ELEMENTS |
| DE2908485A1 (en) * | 1979-03-05 | 1980-09-11 | Licentia Gmbh | METHOD FOR EMBEDDING SEMICONDUCTOR COMPONENTS IN PLASTIC |
-
1982
- 1982-04-15 DE DE19823213789 patent/DE3213789A1/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1000935B (en) * | 1952-09-17 | 1957-01-17 | Siemens Ag | Forming process for the permanent improvement of the electrical surface properties of a semiconductor, in particular for increasing the blocking resistance and reducing the forward resistance of electrically asymmetrically conductive semiconductor-crystal systems |
| DE2542194A1 (en) * | 1974-09-23 | 1976-04-01 | Baldwin Co D H | METHOD FOR MANUFACTURING PHOTO ELEMENTS |
| DE2908485A1 (en) * | 1979-03-05 | 1980-09-11 | Licentia Gmbh | METHOD FOR EMBEDDING SEMICONDUCTOR COMPONENTS IN PLASTIC |
Non-Patent Citations (2)
| Title |
|---|
| E. Ricus, D. Bonnet: "Entwicklung einer Kadmiumselenid-Dünnschichtsolarzelle", Statusbericht Sonnenenergie, VDI-Verl. (1980) S. 1055-1066 * |
| R.M. Feenstra et al "Modifications of CdSe Mesistivity by laser annealing" J. Appl. Phys. Bd. 50(1979), S. 5642-5629 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3213789C2 (en) | 1989-03-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |