DE3174702D1 - Semiconductor device having a polycrystalline semiconductor film - Google Patents

Semiconductor device having a polycrystalline semiconductor film

Info

Publication number
DE3174702D1
DE3174702D1 DE8181302968T DE3174702T DE3174702D1 DE 3174702 D1 DE3174702 D1 DE 3174702D1 DE 8181302968 T DE8181302968 T DE 8181302968T DE 3174702 T DE3174702 T DE 3174702T DE 3174702 D1 DE3174702 D1 DE 3174702D1
Authority
DE
Germany
Prior art keywords
polycrystalline
semiconductor device
semiconductor
semiconductor film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181302968T
Other languages
English (en)
Inventor
Makoto Matsui
Yasuhiro Shiraki
Yoshifumi Katayama
Keisuke Kobayashi
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3174702D1 publication Critical patent/DE3174702D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H01L33/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L29/04—
    • H01L29/78—
    • H01L29/78675—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
DE8181302968T 1980-07-03 1981-06-30 Semiconductor device having a polycrystalline semiconductor film Expired DE3174702D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9100180A JPS5717174A (en) 1980-07-03 1980-07-03 Semiconductor device

Publications (1)

Publication Number Publication Date
DE3174702D1 true DE3174702D1 (en) 1986-07-03

Family

ID=14014258

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181302968T Expired DE3174702D1 (en) 1980-07-03 1981-06-30 Semiconductor device having a polycrystalline semiconductor film

Country Status (5)

Country Link
EP (1) EP0043691B1 (de)
JP (1) JPS5717174A (de)
KR (1) KR830006828A (de)
CA (1) CA1170787A (de)
DE (1) DE3174702D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0388321A (ja) * 1989-08-31 1991-04-12 Tonen Corp 多結晶シリコン薄膜
JP4744700B2 (ja) 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US6908797B2 (en) * 2002-07-09 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7387958B2 (en) * 2005-07-08 2008-06-17 Raytheon Company MMIC having back-side multi-layer signal routing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515967A (ja) * 1974-07-03 1976-01-19 Suwa Seikosha Kk Handotaisochi
US4152535A (en) * 1976-07-06 1979-05-01 The Boeing Company Continuous process for fabricating solar cells and the product produced thereby
JPS5617083A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
EP0043691B1 (de) 1986-05-28
EP0043691A2 (de) 1982-01-13
EP0043691A3 (en) 1982-03-31
CA1170787A (en) 1984-07-10
JPS5717174A (en) 1982-01-28
KR830006828A (ko) 1983-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee