DE3170974D1 - Method for increasing the resistance of a solid material surface against etching - Google Patents

Method for increasing the resistance of a solid material surface against etching

Info

Publication number
DE3170974D1
DE3170974D1 DE8181101073T DE3170974T DE3170974D1 DE 3170974 D1 DE3170974 D1 DE 3170974D1 DE 8181101073 T DE8181101073 T DE 8181101073T DE 3170974 T DE3170974 T DE 3170974T DE 3170974 D1 DE3170974 D1 DE 3170974D1
Authority
DE
Germany
Prior art keywords
increasing
resistance
solid material
material surface
surface against
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181101073T
Other languages
German (de)
English (en)
Inventor
Kurt Datwyler
Albertus Oosenbrug
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3170974D1 publication Critical patent/DE3170974D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
DE8181101073T 1981-02-16 1981-02-16 Method for increasing the resistance of a solid material surface against etching Expired DE3170974D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP81101073A EP0058214B1 (en) 1981-02-16 1981-02-16 Method for increasing the resistance of a solid material surface against etching

Publications (1)

Publication Number Publication Date
DE3170974D1 true DE3170974D1 (en) 1985-07-25

Family

ID=8187576

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181101073T Expired DE3170974D1 (en) 1981-02-16 1981-02-16 Method for increasing the resistance of a solid material surface against etching

Country Status (3)

Country Link
EP (1) EP0058214B1 (US20100268047A1-20101021-C00003.png)
JP (1) JPS57137474A (US20100268047A1-20101021-C00003.png)
DE (1) DE3170974D1 (US20100268047A1-20101021-C00003.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1248402A (en) * 1983-09-16 1989-01-10 Larry E. Stillwagon Method of making articles using gas functionalized plasma developed layer
US5215867A (en) * 1983-09-16 1993-06-01 At&T Bell Laboratories Method with gas functionalized plasma developed layer
AT388884B (de) * 1988-02-05 1989-09-11 Miba Gleitlager Ag Verfahren zum reinigen eines metallischen werkstueckes mit oberflaechenteilen aus verschiedenem werkstoff durch ionenbeschuss aus einer gasentladung
DE4019380C1 (US20100268047A1-20101021-C00003.png) * 1990-06-18 1991-12-05 Du Pont De Nemours (Deutschland) Gmbh, 6380 Bad Homburg, De
US5607733A (en) * 1990-07-12 1997-03-04 Canon Kabushiki Kaisha Process for preparing an X-ray mask structure
DE69132444T2 (de) * 1990-07-12 2001-03-08 Canon Kk Röntgenstrahlmaskenstruktur, Verfahren zur Herstellung und zur Röntgenstrahlbelichtung
JP4237430B2 (ja) * 2001-09-13 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 エッチング方法及びエッチング保護層形成用組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007108B1 (en) * 1978-07-18 1983-04-13 Nippon Telegraph and Telephone Public Corporation A method of manufacturing a diffraction grating structure

Also Published As

Publication number Publication date
EP0058214A1 (en) 1982-08-25
JPS57137474A (en) 1982-08-25
JPS61433B2 (US20100268047A1-20101021-C00003.png) 1986-01-08
EP0058214B1 (en) 1985-06-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee