DE3166071D1 - Aluminum-magnesium alloys in low resistance contacts to silicon coated with si3n4 - Google Patents

Aluminum-magnesium alloys in low resistance contacts to silicon coated with si3n4

Info

Publication number
DE3166071D1
DE3166071D1 DE8181109090T DE3166071T DE3166071D1 DE 3166071 D1 DE3166071 D1 DE 3166071D1 DE 8181109090 T DE8181109090 T DE 8181109090T DE 3166071 T DE3166071 T DE 3166071T DE 3166071 D1 DE3166071 D1 DE 3166071D1
Authority
DE
Germany
Prior art keywords
si3n4
aluminum
low resistance
magnesium alloys
silicon coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181109090T
Other languages
German (de)
English (en)
Inventor
Sanford Morton Marcus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of DE3166071D1 publication Critical patent/DE3166071D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
DE8181109090T 1980-11-26 1981-10-28 Aluminum-magnesium alloys in low resistance contacts to silicon coated with si3n4 Expired DE3166071D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/210,553 US4347262A (en) 1980-11-26 1980-11-26 Aluminum-magnesium alloys in low resistance contacts to silicon

Publications (1)

Publication Number Publication Date
DE3166071D1 true DE3166071D1 (en) 1984-10-18

Family

ID=22783361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181109090T Expired DE3166071D1 (en) 1980-11-26 1981-10-28 Aluminum-magnesium alloys in low resistance contacts to silicon coated with si3n4

Country Status (7)

Country Link
US (1) US4347262A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0052791B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS57122582A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1168856A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3166071D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DK (1) DK523181A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GR (1) GR76306B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533754A1 (fr) * 1982-09-23 1984-03-30 Comp Generale Electricite Procede de fabrication de cellules solaires
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
US5698451A (en) * 1988-06-10 1997-12-16 Mobil Solar Energy Corporation Method of fabricating contacts for solar cells
DE68918565T2 (de) * 1988-06-10 1995-03-09 Mobil Solar Energy Corp Verfahren zur herstellung von sonnenzellenkontakten.
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
US5557146A (en) * 1993-07-14 1996-09-17 University Of South Florida Ohmic contact using binder paste with semiconductor material dispersed therein
US7163596B2 (en) * 2002-06-07 2007-01-16 E. I. Du Pont Nemours And Company Fibers and ribbons for use in the manufacture of solar cells
US7282106B2 (en) * 2003-05-02 2007-10-16 E. I. Du Pont De Nemours And Company Fibers and ribbons for use in the manufacture of solar cells
AU2005322072A1 (en) * 2004-12-27 2006-07-06 Quantum Paper, Inc. Addressable and printable emissive display
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
JP2008166344A (ja) * 2006-12-27 2008-07-17 Kyocera Corp 光電変換素子用導電性ペースト、光電変換素子、および光電変換素子の作製方法
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8889216B2 (en) * 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8133768B2 (en) * 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8395568B2 (en) 2007-05-31 2013-03-12 Nthdegree Technologies Worldwide Inc Light emitting, photovoltaic or other electronic apparatus and system
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8309844B2 (en) * 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells
JP2011517117A (ja) * 2008-04-09 2011-05-26 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 伝導性組成物、および半導体デバイスの製造における使用方法
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
ES2684721T3 (es) * 2013-04-02 2018-10-04 Heraeus Deutschland GmbH & Co. KG Partículas que comprenden AI, Si y Mg en pastas electroconductoras y preparación de células fotovoltaicas

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4072771A (en) * 1975-11-28 1978-02-07 Bala Electronics Corporation Copper thick film conductor
GB1558764A (en) * 1976-11-15 1980-01-09 Ferranti Ltd Formation of contacts for semiconductor devices
US4190321A (en) * 1977-02-18 1980-02-26 Minnesota Mining And Manufacturing Company Microstructured transmission and reflectance modifying coating
US4172919A (en) * 1977-04-22 1979-10-30 E. I. Du Pont De Nemours And Company Copper conductor compositions containing copper oxide and Bi2 O3
US4163678A (en) * 1978-06-30 1979-08-07 Nasa Solar cell with improved N-region contact and method of forming the same

Also Published As

Publication number Publication date
EP0052791B1 (en) 1984-09-12
CA1168856A (en) 1984-06-12
DK523181A (da) 1982-05-27
US4347262A (en) 1982-08-31
EP0052791A1 (en) 1982-06-02
GR76306B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-08-04
JPS57122582A (en) 1982-07-30
JPS6244864B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-09-22

Similar Documents

Publication Publication Date Title
DE3166071D1 (en) Aluminum-magnesium alloys in low resistance contacts to silicon coated with si3n4
GB2115836B (en) Improvements in or relating to aluminium alloys
AU536976B2 (en) Aluminium-silicon alloys
JPS5343630A (en) Novel and useful improvment in zinc alloy and zinc plating method
AU544680B2 (en) Heat balance in reduction cell
JPS56131792A (en) Vibration mechanism to be suspended in down hole
DE3368883D1 (en) Improvements in casting aluminium alloys
DE3170343D1 (en) Improvements in metal components
HK36284A (en) Improvements in or relating to selecting plating
GB2014487B (en) Varying metal-mould contact in continous casting
JPS56136943A (en) Memory alloy based on solid solution rich in copper or nickel
DE3170774D1 (en) Resistance measuring circuit
JPS5713153A (en) Alloy
JPS5784068A (en) Ball with ball speedometer
GB2066846B (en) Aluminium-tin base bearing alloy
JPS5716367A (en) Resistance measuring circuit
GB2067219B (en) Aluminium-tin base bearing alloys
JPS5299917A (en) Corrosion resistance matrix strengthed alloy
GB2024264B (en) Aluminium alloys and preparation and use thereof
GB2208119B (en) Method and structure for achieving low contact resistance to aluminum and its alloys
JPS5794555A (en) Isotropic and near isotropic magnet alloy
GB2087572B (en) Improvements in and relating to current sensing devices
GB2083130B (en) Improvements in friction stays
GB2069528B (en) Ferromagnetic alloys
JPS52141409A (en) Aluminium alloy excellent in strength and formability

Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee