DE3122544A1 - Process and apparatus for etching through-holes in glass sheets - Google Patents
Process and apparatus for etching through-holes in glass sheetsInfo
- Publication number
- DE3122544A1 DE3122544A1 DE19813122544 DE3122544A DE3122544A1 DE 3122544 A1 DE3122544 A1 DE 3122544A1 DE 19813122544 DE19813122544 DE 19813122544 DE 3122544 A DE3122544 A DE 3122544A DE 3122544 A1 DE3122544 A1 DE 3122544A1
- Authority
- DE
- Germany
- Prior art keywords
- etching
- hydrofluoric acid
- etched
- cassette
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims abstract description 26
- 239000011521 glass Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000007921 spray Substances 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 238000001015 X-ray lithography Methods 0.000 claims description 4
- 238000007654 immersion Methods 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- DSEKYWAQQVUQTP-XEWMWGOFSA-N (2r,4r,4as,6as,6as,6br,8ar,12ar,14as,14bs)-2-hydroxy-4,4a,6a,6b,8a,11,11,14a-octamethyl-2,4,5,6,6a,7,8,9,10,12,12a,13,14,14b-tetradecahydro-1h-picen-3-one Chemical compound C([C@H]1[C@]2(C)CC[C@@]34C)C(C)(C)CC[C@]1(C)CC[C@]2(C)[C@H]4CC[C@@]1(C)[C@H]3C[C@@H](O)C(=O)[C@@H]1C DSEKYWAQQVUQTP-XEWMWGOFSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000000899 Gutta-Percha Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 240000000342 Palaquium gutta Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229920000588 gutta-percha Polymers 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- -1 resist Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
Verfahren und Vorrichtung zum Ätzen von DurchbrüchenMethod and device for etching openings
in Glasplatten.in glass plates.
Die Erfindung betrifft ein Verfahren und eine Vorrichtung zum Ätzen von Durchbrüchen in Glasplatten mit Flußsäure, insbesondere zur Herstellung von Masken für die Röntgenlithographie.The invention relates to a method and a device for etching of breakthroughs in glass plates with hydrofluoric acid, in particular for the production of Masks for X-ray lithography.
Flußsäure löst bekanntlich die meisten Metalle unter Bildung von Wasserstoff und Fluoriden. Einige Metalle, wie Gold, Platin, widerstehen, ebenso Guttapercha, Ceresin und verschiedene Kunststoffe. Quarz, Glas und viele andere Silikate werden von Flußsäireunter Bildung von flüchtigem Siliziumtetrafluorid angegriffen und aufgelöst.It is known that hydrofluoric acid dissolves most metals with the formation of hydrogen and fluorides. Some metals, such as gold, platinum, resist, as well as gutta-percha, Ceresin and various plastics. Quartz, glass and many other silicates will be attacked and dissolved by hydrofluoric acids with the formation of volatile silicon tetrafluoride.
Diese Eigenschaften der Flußsäure macht man sich unter anderem bei der Herstellung von Masken für die Röntgenlithographie zunutze. Dabei wird z. B. die Maskenstruktur auf mit Täanund Kupfer bedampfte Glassubstrate fototechnisch abgebildet und die Gold-Absorberstrukturen galvanisch aufgebracht. Anschließend wird die Strukturseite mit Polyimid beschichtet. Durch Ausheizen entsteht eine stabile Folie, in die die Gold-Strukturen eingebettet sind.These properties of hydrofluoric acid are among other things the production of masks for X-ray lithography. It is z. B. the mask structure on glass substrates vapor-deposited with täan and copper and the gold absorber structures are applied galvanically. Afterward the structure side is coated with polyimide. Baking out creates a stable Foil in which the gold structures are embedded.
Die unstrukturierte, freie Rückseite des Substrats wird dann durch selektives Ätzen mit Flußsäure unter Verwendung einer Ätzabdeckung derart abgeätzt, daß von der ursprünglichen Glasscheibe lediglich ein Randbereich als äußerer Maskenrahmen verbleibt. Der ausgeätzte Mittelbereich wird nach Entfernen der Kupfer-Aufdampfschicht von der PoLyimidfolie mit den Gold-Strukturen freitragend überspannt.The unstructured, free back of the substrate is then through selective etching with hydrofluoric acid using an etching cover so that that of the original glass pane only an edge area as an outer mask frame remains. The etched center area becomes after removal of the copper vapor deposition layer self-supporting from the polyimide film with the gold structures overstretched.
Nach partiellem Abdecken der Substrate mit säurebeständigem Klebeband erfolgte bisher die Glasätzung durch einfaches Tauchen in 40 %iger Flußsäure. Bei dieser Methode wird durch Verbleiben von Ätzprodukten (Erdalkali-Fluoride) im Ätzausschnitt der Ätzangriff wesentlich verlangsamt und sehr ungleichmäßig. Laufendes Zwischenspülen und Entfernung des Ätzschlamms auf mechanischem Wege ist nötig. Die Expositionszeit für 1,5 mm dicke Gläser kann nach diesem Verfahren ca. 2 bis 3 Stunden betragen.After partially covering the substrates with acid-resistant adhesive tape So far, the glass etching has been carried out by simply dipping in 40% hydrofluoric acid. at this method is achieved by leaving etching products (alkaline earth fluoride) in the etched cutout the etching attack slowed down considerably and very unevenly. Ongoing intermediate rinsing and removal of the caustic sludge by mechanical means is necessary. The exposure time for 1.5 mm thick glasses, this process can take about 2 to 3 hours.
Der Erfindung liegt die Aufgabe zugrunde, das eingangs beschriebene Verfahren und eine Vorrichtung zur Durch führung dieses Verfahrens zu realisieren, bei dem der gewählte Ätzausschnitt völlig gleichmäßig und ohne Rückt stande abgetragen wird. Diese Aufgabe wird dadurch gelöst, daß die mit Ausnahme des zu ätzenden Durchbruches abgedeckte Glasplatte in Flußsäure getaucht und die Durchbruchs fläche im eingetauchten Zustand der Glas platte einem Sprühstrahl ausgesetzt wird. Die dadurch bewirkte Turbulenz verhindert ein Verbleiben der beschriebenen Ätzrtickstände im Ätzausschnitt. Mit einem Verfahren nach der Erfindung erhält man somit einen sehr gleichmäßigen Xtzabtrage Eine Vorrichtung zur Durchführung des Verfahrens besteht Ze B. darin, daß zur Aufnahme der zu ätzenden Glasplatte eine Ätzkassette mit einer Öffnung in einer Seitenwand vorgesehen ist, die der Fläche des zu ätzenden Durch bruchs entspricht und ferner gegenüber dieser Fläche der in die Flußsäure eingetauchten Kassette ein Sprühkopf angebracht ist, durch den kontinuierlich Flußsäure gegen den zu ätzenden Ausschnitt gepumpt wird.The invention is based on the object described at the outset To implement a method and a device for carrying out this method, in which the selected etched section was removed completely evenly and without any residue will. This object is achieved in that, with the exception of the breakthrough to be etched covered glass plate immersed in hydrofluoric acid and the breakthrough area in the immersed Condition of the glass plate is exposed to a spray jet. Which caused it Turbulence prevents the etching residue described from remaining in the etched cutout. With a method according to the invention one thus obtains a very uniform one Xtzabtrage An apparatus for carrying out the method consists of B. that for receiving the glass plate to be etched an etching cassette with an opening in a side wall is provided which corresponds to the area of the opening to be etched and also opposite this face of the cassette immersed in the hydrofluoric acid Spray head is attached through the continuous hydrofluoric acid against the to be etched Neck is pumped.
Der durch die Reaktionswärme bedingte Temperaturanstieg in der FluBsäure wird, zur Erzielung einer konstanten Ätzrate durch eine thermostatisierte Kühlung ausgeglichen. In der beschriebenen Versuchsapparatur wird dies durch wassergekühlte Peltier-Kühlbiöcke mit Flüssigkeitswärmetauscher erreicht.The temperature rise caused by the heat of reaction in the hydrofluoric acid is thermostated to achieve a constant etching rate Cooling balanced. In the experimental apparatus described, this is done using water-cooled Achieved Peltier cooling blocks with liquid heat exchangers.
Die Erfindung wird anhand der Figur erläutert, die eine Schemazeichnung einer Apparatur für kombinierte Tauchspruhätzung zeigt.The invention is explained with reference to the figure, which is a schematic drawing shows an apparatus for combined dip spray etching.
In einer Ätzkassette 1 ist z. B. ein Glassubstrat 2 gegenüber einem Ausschnitt 3 in einer Wand der Kassette angebracht. Mit 4 ist eine Ätzabdeckung bezeichnet, die z. B.In an etching cassette 1 is z. B. a glass substrate 2 against a Cutout 3 made in a wall of the cassette. With 4 is an etching cover referred to, the z. B.
aus säurebeständigem Klebeband besteht und den Rand des Substrates abdichtet. Die Ätzkassette befindet sich in einem Flußsäurebehälter 5, der z. B. mit 40 %iger Flußsäure gefüllt ist. Unmittelbar vor dem Glassubstrat ist ein Sprühkopf 6 angeordnet. Die dem Substrat zugewandte Fläche des Sprühkopfes besteht aus einer Lochplatte 7 mit z. B. 0,8 mm Bohrungen. Eine flußsäurebeständige Pumpe 8 pumpt kontinuierlich über eine Leitung 9 Flußsäure durch den Sprühkopf gegen den zu ätzenden Ausschnitt. über die Leitung 10 saugt die Pumpe Flußsäure aus dem Flußsäurebehälter an.consists of acid-resistant tape and the edge of the substrate seals. The etching cassette is located in a hydrofluoric acid container 5 which, for. B. is filled with 40% hydrofluoric acid. Immediately in front of the glass substrate is a spray head 6 arranged. The surface of the spray head facing the substrate consists of one Perforated plate 7 with z. B. 0.8 mm holes. A hydrofluoric acid-resistant pump 8 pumps continuously through a line 9 hydrofluoric acid through the spray head against the to be etched Cutout. The pump draws hydrofluoric acid from the hydrofluoric acid container via line 10 at.
Bei Verwendung einer 40 %igen Flußsäure kann Glas in einer Dicke von 1,5 mm mit dem Verfahren nach der Erfindung wesentlich schneller gegenüber dem herkömmlichen Verfahren abgeätzt werden.If a 40% hydrofluoric acid is used, glass can have a thickness of 1.5 mm with the method according to the invention much faster than the conventional one Procedure to be etched off.
Die Erfindung ist nicht auf das beschriebene Ausführungsbeispiel und nicht auf die Herstellung von Masken für die Röntgenlithografie beschränkt, sondern allgemein zum Ätzen von Durchbrüchen und Kanälen in Glas und Metall anwendbar.The invention is not limited to the exemplary embodiment described and not limited to the production of masks for X-ray lithography, but generally applicable for etching openings and channels in glass and metal.
Ferner ist das Verfahren auch geeignet für alle Tauchätz- bzw. Tauchentwicklungsprozesse, bei denen ein optimaler Austausch des Prozeßmediums (Ätzflüssigkeit, Entwickler, Stripper, usw.) am Substrat erforderlich ist, so z. Bo in der Halbleitertechnik -zum Ätzen von Si02-Schichten auf Siliziumscheiben und bei phototechnischen Prozessen zur Entwicklung extrem dicker Photolackschichten und zum Strippen von schwerlöslichen Photolacken.The process is also suitable for all dip etching respectively. Immersion development processes in which an optimal exchange of the process medium (etching liquid, Developer, stripper, etc.) is required on the substrate, e.g. Bo in semiconductor technology - for etching Si02 layers on silicon wafers and in phototechnical processes for the development of extremely thick photoresist layers and for the stripping of poorly soluble ones Photoresists.
2 Patentansprüche 1 Figur Leerseite2 claims 1 figure Blank page
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813122544 DE3122544A1 (en) | 1981-06-05 | 1981-06-05 | Process and apparatus for etching through-holes in glass sheets |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813122544 DE3122544A1 (en) | 1981-06-05 | 1981-06-05 | Process and apparatus for etching through-holes in glass sheets |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3122544A1 true DE3122544A1 (en) | 1982-12-30 |
Family
ID=6134089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813122544 Withdrawn DE3122544A1 (en) | 1981-06-05 | 1981-06-05 | Process and apparatus for etching through-holes in glass sheets |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3122544A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3343704A1 (en) * | 1983-12-02 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | METHOD AND DEVICE FOR SETTING HOLE GRID PLATES, ESPECIALLY FOR PLASMA CATHODE DISPLAY |
| EP1775752A2 (en) * | 2005-10-15 | 2007-04-18 | Burth, Dirk, Dr. | Etching process for manufacturing an electron exit window |
| DE102010044133A1 (en) | 2010-11-18 | 2012-05-24 | Schott Ag | Etching process for surface structuring |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD70354A (en) * | ||||
| DE1132405B (en) * | 1960-11-04 | 1962-06-28 | Siemens Ag | Process for localized etching of the surface of workpieces, in particular semiconductor crystals |
| US3294603A (en) * | 1963-10-16 | 1966-12-27 | Pittsburgh Plate Glass Co | Method for treating a material in a solution |
| GB1274731A (en) * | 1968-09-12 | 1972-05-17 | Glaverbel | Process for treating bodies made of glass or of vitrocrystalline or ceramic material |
| DE2354592A1 (en) * | 1972-11-01 | 1974-05-09 | Hitachi Ltd | PHOTORESIST DEVELOPMENT PROCESS AND DEVICE FOR IMPLEMENTING THE SAME |
| US4053351A (en) * | 1975-11-21 | 1977-10-11 | Rockwell International Corporation | Chemical machining of silica and glass |
-
1981
- 1981-06-05 DE DE19813122544 patent/DE3122544A1/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD70354A (en) * | ||||
| DE1132405B (en) * | 1960-11-04 | 1962-06-28 | Siemens Ag | Process for localized etching of the surface of workpieces, in particular semiconductor crystals |
| US3294603A (en) * | 1963-10-16 | 1966-12-27 | Pittsburgh Plate Glass Co | Method for treating a material in a solution |
| GB1274731A (en) * | 1968-09-12 | 1972-05-17 | Glaverbel | Process for treating bodies made of glass or of vitrocrystalline or ceramic material |
| DE2354592A1 (en) * | 1972-11-01 | 1974-05-09 | Hitachi Ltd | PHOTORESIST DEVELOPMENT PROCESS AND DEVICE FOR IMPLEMENTING THE SAME |
| US4053351A (en) * | 1975-11-21 | 1977-10-11 | Rockwell International Corporation | Chemical machining of silica and glass |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3343704A1 (en) * | 1983-12-02 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | METHOD AND DEVICE FOR SETTING HOLE GRID PLATES, ESPECIALLY FOR PLASMA CATHODE DISPLAY |
| EP1775752A2 (en) * | 2005-10-15 | 2007-04-18 | Burth, Dirk, Dr. | Etching process for manufacturing an electron exit window |
| EP1775752A3 (en) * | 2005-10-15 | 2007-06-13 | Burth, Dirk, Dr. | Etching process for manufacturing an electron exit window |
| DE102010044133A1 (en) | 2010-11-18 | 2012-05-24 | Schott Ag | Etching process for surface structuring |
| DE102010044133B4 (en) * | 2010-11-18 | 2016-03-03 | Schott Ag | Etching process for surface structuring and etching mask |
| US9340450B2 (en) | 2010-11-18 | 2016-05-17 | Schott Ag | Etching method for surface structuring |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8139 | Disposal/non-payment of the annual fee |