DE3066265D1 - Alpha mercuric iodide single crystals and process for their manufacture - Google Patents
Alpha mercuric iodide single crystals and process for their manufactureInfo
- Publication number
- DE3066265D1 DE3066265D1 DE8080400932T DE3066265T DE3066265D1 DE 3066265 D1 DE3066265 D1 DE 3066265D1 DE 8080400932 T DE8080400932 T DE 8080400932T DE 3066265 T DE3066265 T DE 3066265T DE 3066265 D1 DE3066265 D1 DE 3066265D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- single crystals
- mercuric iodide
- iodide single
- alpha mercuric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229960003671 mercuric iodide Drugs 0.000 title 1
- YFDLHELOZYVNJE-UHFFFAOYSA-L mercury diiodide Chemical compound I[Hg]I YFDLHELOZYVNJE-UHFFFAOYSA-L 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
- C30B7/06—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7916418A FR2459843A1 (fr) | 1979-06-26 | 1979-06-26 | Procede de fabrication de monocristaux d'iodure mercurique alpha et monocristaux obtenus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3066265D1 true DE3066265D1 (en) | 1984-03-01 |
Family
ID=9227112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8080400932T Expired DE3066265D1 (en) | 1979-06-26 | 1980-06-23 | Alpha mercuric iodide single crystals and process for their manufacture |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4347230A (OSRAM) |
| EP (1) | EP0022013B1 (OSRAM) |
| JP (1) | JPS5641900A (OSRAM) |
| DE (1) | DE3066265D1 (OSRAM) |
| FR (1) | FR2459843A1 (OSRAM) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2541668B1 (fr) * | 1983-02-28 | 1985-06-07 | Commissariat Energie Atomique | Procede de preparation d'iodure mercurique alpha de haute purete destine a etre utilise comme source de matiere premiere pour la croissance de monocristaux pour la detection nucleaire |
| US4535607A (en) * | 1984-05-14 | 1985-08-20 | Carrier Corporation | Method and control system for limiting the load placed on a refrigeration system upon a recycle start |
| US4514989A (en) * | 1984-05-14 | 1985-05-07 | Carrier Corporation | Method and control system for protecting an electric motor driven compressor in a refrigeration system |
| US4538422A (en) * | 1984-05-14 | 1985-09-03 | Carrier Corporation | Method and control system for limiting compressor capacity in a refrigeration system upon a recycle start |
| JPS62120715A (ja) * | 1985-11-20 | 1987-06-02 | Tokyo Electric Co Ltd | リセツト信号発生回路 |
| US5004723A (en) * | 1989-01-31 | 1991-04-02 | Industrial Technology Research Institute | Preparation of superconducting epitaxial film using the method of liquid-phase epitaxial growth |
| US5853691A (en) * | 1993-08-10 | 1998-12-29 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On The Behalf Of The University Of Oregon | Silver halides of altered crystal habit or morphology and methods for producing same |
| US5545394A (en) * | 1993-08-10 | 1996-08-13 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon | Complexation-mediated crystal-forming reactions using complexing agents |
| US5853686A (en) * | 1993-08-10 | 1998-12-29 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of The University Of Oregon | Calcium carbonates of altered crystal habit or morphology and methods for producing same |
| WO2003018716A1 (en) | 2001-08-29 | 2003-03-06 | Generation Technology Research Pty Ltd | Coal dewatering system and method |
| CN102351430B (zh) * | 2011-07-11 | 2013-06-05 | 上海大学 | 用于辐射探测器的多晶碘化汞薄膜的制备方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3969182A (en) * | 1975-07-16 | 1976-07-13 | The United States Of America As Represented By The United States Energy Research And Development Administration | Growth of mercuric iodide single crystals from dimethylsulfoxide |
| FR2338742A1 (fr) * | 1976-01-26 | 1977-08-19 | Commissariat Energie Atomique | Procede de fabrication de monocristaux d'iodure mercurique alpha |
-
1979
- 1979-06-26 FR FR7916418A patent/FR2459843A1/fr active Granted
-
1980
- 1980-06-23 US US06/161,923 patent/US4347230A/en not_active Expired - Lifetime
- 1980-06-23 DE DE8080400932T patent/DE3066265D1/de not_active Expired
- 1980-06-23 EP EP80400932A patent/EP0022013B1/fr not_active Expired
- 1980-06-25 JP JP8638380A patent/JPS5641900A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2459843B1 (OSRAM) | 1985-02-22 |
| US4347230A (en) | 1982-08-31 |
| JPS5641900A (en) | 1981-04-18 |
| FR2459843A1 (fr) | 1981-01-16 |
| EP0022013A3 (en) | 1981-04-01 |
| EP0022013A2 (fr) | 1981-01-07 |
| EP0022013B1 (fr) | 1984-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8339 | Ceased/non-payment of the annual fee |