DE3065715D1 - Process for aligning photogravures with respect to region-isolating walls in integrated circuits - Google Patents
Process for aligning photogravures with respect to region-isolating walls in integrated circuitsInfo
- Publication number
- DE3065715D1 DE3065715D1 DE8080401616T DE3065715T DE3065715D1 DE 3065715 D1 DE3065715 D1 DE 3065715D1 DE 8080401616 T DE8080401616 T DE 8080401616T DE 3065715 T DE3065715 T DE 3065715T DE 3065715 D1 DE3065715 D1 DE 3065715D1
- Authority
- DE
- Germany
- Prior art keywords
- photogravures
- aligning
- region
- respect
- integrated circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P90/191—
-
- H10P50/00—
-
- H10W10/031—
-
- H10W10/181—
-
- H10W10/30—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7931483A FR2472268A1 (fr) | 1979-12-21 | 1979-12-21 | Procede de formation de caisson dans des circuits integres |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3065715D1 true DE3065715D1 (en) | 1983-12-29 |
Family
ID=9233091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8080401616T Expired DE3065715D1 (en) | 1979-12-21 | 1980-11-12 | Process for aligning photogravures with respect to region-isolating walls in integrated circuits |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4369561A (enExample) |
| EP (1) | EP0031260B1 (enExample) |
| DE (1) | DE3065715D1 (enExample) |
| FR (1) | FR2472268A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4532700A (en) * | 1984-04-27 | 1985-08-06 | International Business Machines Corporation | Method of manufacturing semiconductor structures having an oxidized porous silicon isolation layer |
| US4627883A (en) * | 1985-04-01 | 1986-12-09 | Gte Laboratories Incorporated | Method of forming an isolated semiconductor structure |
| JPH01179342A (ja) * | 1988-01-05 | 1989-07-17 | Toshiba Corp | 複合半導体結晶体 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3713908A (en) * | 1970-05-15 | 1973-01-30 | Ibm | Method of fabricating lateral transistors and complementary transistors |
| DE2044863A1 (de) * | 1970-09-10 | 1972-03-23 | Siemens Ag | Verfahren zur Herstellung von Schottkydioden |
| GB1501114A (en) * | 1974-04-25 | 1978-02-15 | Rca Corp | Method of making a semiconductor device |
| US3919060A (en) * | 1974-06-14 | 1975-11-11 | Ibm | Method of fabricating semiconductor device embodying dielectric isolation |
| US3954523A (en) * | 1975-04-14 | 1976-05-04 | International Business Machines Corporation | Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation |
| GB1503223A (en) * | 1975-07-26 | 1978-03-08 | Int Computers Ltd | Formation of buried layers in a substrate |
| US4016017A (en) * | 1975-11-28 | 1977-04-05 | International Business Machines Corporation | Integrated circuit isolation structure and method for producing the isolation structure |
-
1979
- 1979-12-21 FR FR7931483A patent/FR2472268A1/fr active Granted
-
1980
- 1980-11-12 DE DE8080401616T patent/DE3065715D1/de not_active Expired
- 1980-11-12 EP EP80401616A patent/EP0031260B1/fr not_active Expired
- 1980-12-04 US US06/212,974 patent/US4369561A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2472268A1 (fr) | 1981-06-26 |
| EP0031260B1 (fr) | 1983-11-23 |
| EP0031260A3 (en) | 1981-07-22 |
| US4369561A (en) | 1983-01-25 |
| FR2472268B1 (enExample) | 1983-10-14 |
| EP0031260A2 (fr) | 1981-07-01 |
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