DE3064478D1 - High speed electronic switching circuit - Google Patents

High speed electronic switching circuit

Info

Publication number
DE3064478D1
DE3064478D1 DE8080301153T DE3064478T DE3064478D1 DE 3064478 D1 DE3064478 D1 DE 3064478D1 DE 8080301153 T DE8080301153 T DE 8080301153T DE 3064478 T DE3064478 T DE 3064478T DE 3064478 D1 DE3064478 D1 DE 3064478D1
Authority
DE
Germany
Prior art keywords
high speed
switching circuit
electronic switching
speed electronic
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080301153T
Other languages
English (en)
Inventor
Hideaki Isogai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3064478D1 publication Critical patent/DE3064478D1/de
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415Address circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0783Lateral bipolar transistors in combination with diodes, or capacitors, or resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0416Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/04166Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
DE8080301153T 1979-04-12 1980-04-10 High speed electronic switching circuit Expired DE3064478D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4464079A JPS55147038A (en) 1979-04-12 1979-04-12 Electronic circuit

Publications (1)

Publication Number Publication Date
DE3064478D1 true DE3064478D1 (en) 1983-09-08

Family

ID=12697022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080301153T Expired DE3064478D1 (en) 1979-04-12 1980-04-10 High speed electronic switching circuit

Country Status (4)

Country Link
US (1) US4355245A (de)
EP (1) EP0018172B1 (de)
JP (1) JPS55147038A (de)
DE (1) DE3064478D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494017A (en) * 1982-03-29 1985-01-15 International Business Machines Corporation Complementary decode circuit
US4536665A (en) * 1982-12-27 1985-08-20 The Grass Valley Group, Inc. Circuit for converting two balanced ECL level signals into an inverted TTL level signal
JPS60254484A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 2段デコーダ回路
EP0310230A3 (de) * 1987-08-07 1991-09-11 Logitech Inc Optoelektronische Vorrichtung und Anordnung geringer Leistung
US4851711A (en) * 1988-02-02 1989-07-25 International Business Machines Corporation Asymmetrical clock chopper delay circuit
US5023479A (en) * 1990-07-31 1991-06-11 Motorola, Inc. Low power output gate
US5334886A (en) * 1992-11-13 1994-08-02 International Business Machines Corporation Direct-coupled PNP transistor pull-up ECL circuits and direct-coupled complementary push-pull ECL circuits
EP0606160A1 (de) * 1993-01-08 1994-07-13 National Semiconductor Corporation Zum Desaktivieren eines Transistors bei einem Kurzschluss mit induktiver Komponents dienende Schutzschaltung
WO1997014216A1 (en) * 1995-10-06 1997-04-17 Philips Electronics N.V. A high-speed/high-slew-rate tri-modal all bipolar buffer/switch and method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3261988A (en) * 1963-12-23 1966-07-19 North American Aviation Inc High speed signal translator
US3394267A (en) * 1964-12-07 1968-07-23 Massachusetts Inst Technology Multifunction high efficiency logical circuit element
US3501647A (en) * 1966-09-08 1970-03-17 Rca Corp Emitter coupled logic biasing circuit
NL6700144A (de) * 1967-01-05 1968-07-08
FR1594389A (de) * 1967-12-20 1970-06-01
US3702944A (en) * 1971-02-24 1972-11-14 Communications Satellite Corp Pulse amplifier
US3668430A (en) * 1971-07-12 1972-06-06 Signetics Corp High speed logic circuit with low effective miller capacitance
US3978347A (en) * 1974-10-02 1976-08-31 Motorola, Inc. High band width emitter coupled logic gate
JPS5720790Y2 (de) * 1976-09-16 1982-05-04
US4246501A (en) * 1978-09-21 1981-01-20 Exxon Research & Engineering Co. Gated back-clamped transistor switching circuit

Also Published As

Publication number Publication date
US4355245A (en) 1982-10-19
EP0018172A2 (de) 1980-10-29
EP0018172B1 (de) 1983-08-03
JPS55147038A (en) 1980-11-15
EP0018172A3 (en) 1980-11-12

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee