DE3042425A1 - semi-finished solder coated strip - with soldering aid layer on metal carrier for solder layer machined to close thickness tolerance - Google Patents

semi-finished solder coated strip - with soldering aid layer on metal carrier for solder layer machined to close thickness tolerance

Info

Publication number
DE3042425A1
DE3042425A1 DE19803042425 DE3042425A DE3042425A1 DE 3042425 A1 DE3042425 A1 DE 3042425A1 DE 19803042425 DE19803042425 DE 19803042425 DE 3042425 A DE3042425 A DE 3042425A DE 3042425 A1 DE3042425 A1 DE 3042425A1
Authority
DE
Germany
Prior art keywords
layer
solder
thickness
semi
tolerance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19803042425
Other languages
German (de)
Inventor
Holger 6456 Langenselbold Eisentraut
Bernd 6451 Großkrotzenburg Neubauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Priority to DE19803042425 priority Critical patent/DE3042425A1/en
Publication of DE3042425A1 publication Critical patent/DE3042425A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/123—Metallic interlayers based on iron group metals, e.g. steel
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

Semifinished strip material, to produce metal lids with a layer of solder for fixing to ceramic casings enclosing a semiconductor or an integrated circuit, consists of a carrier strip, prepd. from metal with a thermal expansion coefficient to match that of the casing. A soldering aid is applied by roller plating with a layer of copper, nickel or their alloys to a thickness of 0.1-0.5 mm and a tolerance of 3 microns.The solder layer is applied by pouring molten solder with a plus tolerance of 10% over at least 70% of the width and by machining it down to a total tolerance of 3 microns. The close tolerances, esp. as regards the soldering layer thickness, prevents uncontrolled flow conditions during the soldering operation.

Description

Verfahren zur Herstellung e eines Halbzeuges Process for the production of a semi-finished product

in Bandform" Die Erfindung betrifft ein Verfahren zur HerstelLung eines Halbzeugs in Bandform für die Herstellung von Metalldeckeln, wie sie z.B. in der deutschen Patentanmeldung P 50 10 076.6 beschrieben sind. in tape form "The invention relates to a method of manufacture of a semi-finished product in strip form for the production of metal lids, as e.g. are described in German patent application P 50 10 076.6.

Aufgabe der Erfindung ist es, ein solchs-s Herstellungsverfahren für die Herstellung von mit einer Lotschicht: versehenen Netalideckeln für das Verschließen von Gehäusen aus keramischem Werkstoff, in denen ein Halbleiter oder ein integrierter Schaltkreis angeordnet sind, anzugeben, mit dem ein enger Toleranzbereich von maximal 12 im für die Dicke der Letschicht einhaltbar ist.The object of the invention is to provide such a manufacturing method for the production of netali lids with a layer of solder for closing of housings made of ceramic material in which a semiconductor or an integrated Circuit are arranged to indicate with which a narrow tolerance range of a maximum 12 im can be maintained for the thickness of the let layer.

Gelöst wird diese Aufgabe bei dem eingangs beschriebe@@@ Verfaharen durch die im Kennzeichen des Hauptanspruches aufqeführten Merkmale. Weitere Ausqestaltungen des Verfahrens sind den Unteransprüchen zu entnchm@@.This task is solved with the @@@ procedure described at the beginning by the features listed in the characterizing part of the main claim. Further arrangements of the procedure are to be found in the subclaims.

Die Brfindung sei nachstchend anhand eines Ausührungsbeispiels näher crläutert.The finding is detailed below using an exemplary embodiment crlauds.

In den Zeichnungen zeigen: Figur 1 ein Ausgangsmaterial für das Verfahren Figur 2 ein mit einer Lotschicht versehenes Band Figur 3 das nach dem Verfahren hergestellte Halbzeue Figur 4 dis Schichttlickenverteilung beim erfindungstemäßen Verfahren.In the drawings: FIG. 1 shows a starting material for the process FIG. 2 shows a tape provided with a layer of solder; FIG. 3 shows that according to the method produced semifinished Figure 4 dis layer thickness distribution in the case of the invention Procedure.

Beispiel Als Ausgangsmaterial für da; Verfahren dient ein Metallträger (siehe Figur 1) 4 aus einem Metall, dessen thermiscier Ausdehnungskoeffizient demjenigen des Gehäusewerkstoffs (Keramik) angepaßt ist, z.B. aus einer Nickel-Eisen-Legierung in Bandform, auf dem als erster Verfahrensschritt eine Lotbilfsschicht 5 aus Kupfer oder einer Kupfer-Legierung, aes Nickel oder einer Nickel-Legierung durch Walzplattieren aufgebracht wird unter Einhaltung einer Gesamtdickentoleranz de Vezbundes von weniger als 3 Wm bei einer Gesamtdicke des Verbundes von o,l bis 0,5 mm. er Verbund kann noch an seiner der @othilfsschicht abgekchrten Seite eine Korrosionsschutzschicht 6, z.B. aus Nicket oder einer Nickel-Legierung, aufweisen, die vorzugsweise im glcichen Arbeitsgang durch Walzplattieren aufgebracht wird wie dei Lothilfssch cht.Example As a starting material for there; A metal support is used for the procedure (see Figure 1) 4 made of a metal whose thermal expansion coefficient is the same the housing material (ceramic) is adapted, e.g. made of a nickel-iron alloy in tape form, on which a solder bilf layer 5 made of copper as the first process step or a copper alloy, aes nickel or a nickel alloy by roll plating is applied in compliance with a total thickness tolerance de Vezbundes of less than 3 Wm with a total thickness of the composite of 0.1 to 0.5 mm. he can network a corrosion protection layer on the side that has been chipped off from the auxiliary layer 6, for example made of nicket or a nickel alloy, which are preferably similar Work step is applied by roll cladding like the soldering auxiliary layer.

In figur 1 ist die I)icke mit S1 mit der Toleranz + 1 anqegeben, d.h. S1 # @1 = 0,1 bis 0,5 mm # 3 µm.In figure 1 the thickness is indicated with S1 with the tolerance + 1, i.e. S1 # @ 1 = 0.1 to 0.5 mm # 3 µm.

Auf den Verbund nach Figur 1 wird im nächsten Verfahrensschritt (siehe Figur 2) eine Lotschicht im Aufschmelzverfahren iufgebracht. Die Aufbringung der Schicht erfolgt vorzugsweise durch hochfrequentes Beloten im Durchlauf. In the next process step (see Figure 2) a solder layer applied in the melting process. The application of the Layer is preferably carried out by high-frequency soldering in a run.

Die Lotschicht 7 wird beim Aufschmelzen mit einem Dickenübermaß von wenigstens 10 % der Solidicke SL in Figur 3 aufgcbracht auf der Oberfläche der Lothilfsschichi 5 in einem Flächen@ereich, der sich symmetrisch beiderseits der Mitte des Träjerbands 4 erstreckt, und mindestens 70 % der Gesamtbandbre te B in Figur 2 beträgt. Die Masse des Lotes 7 in Figu - 2 ist also größer als in Figur 3 und von anderer #Quersch ittsform, wie sich ohne weiteres durch einen Vergleich der bei ton Figuren ergibt. The solder layer 7 is when melted with an excess thickness of at least 10% of the solid thickness SL in FIG. 3 applied to the surface of the solder auxiliary layers 5 in a surface area that is symmetrical on both sides of the center of the carrier band 4 and at least 70% of the total bandwidth B in FIG. the The mass of the perpendicular 7 in Figu - 2 is therefore greater than in Fig. 3 and from a different #quersch ittsform, as can be easily seen by comparing the figures at ton.

Der Ver ahrensschritt 3 ist in Figur 3 dargestellt, nämlich daß die Lotschicht 7 durch spanendes Abtragen, vorzugsweise 1durch Schälen, auf die Solldicke SL in Figur 3 gebracht wird |mit der Maßgabe, daß die Toleranz T2 für die Gesamtdicke S9 des bel teten bandförmigen Metallträgers 4 weniger als jt. 3 µm Heträgt, d.h. S2 + T2 = 0,15 bis 0,6 mm, vorzugsweise 0,2 bis 0,3 mm + 3 µm.The process step 3 is shown in Figure 3, namely that the Solder layer 7 by machining removal, preferably 1 by peeling, to the desired thickness SL is brought into Figure 3 | with the proviso that the tolerance T2 for the total thickness S9 of the bel ended band-shaped metal support 4 less than jt. 3 µm H, i.e. S2 + T2 = 0.15 to 0.6 mm, preferably 0.2 to 0.3 mm + 3 µm.

Wie die @igur 3 erkennen läßt, wird wen dem Band gemäß Figur 2 nur ein Streifen mit einer Breite B2 als Halbzeug verwend@t, aus dem die Deckel ausgestanzt wcrdoll. Diese einzelnen Deckel sind bereits in der Patentanmeldung P 30 10 076.6 beschrieben und der Inhalt der dortigen Beschreibeng wird gleichzeitig zum Inhalt vorliegender Anmeldung gemacht. Dies gilt auch für das Endprodukt einer in eine Gehäuse gekapselten Halbleiters oder integrierter Schaltkreises mit Iräger bzw. Leiterrahmon und Außenanschlüssen, wie dort dargestellt.As the figure 3 shows, the band according to FIG a strip with a width B2 is used as a semi-finished product, from which the cover is punched out wcrdoll. These individual covers are already in the patent application P 30 10 076.6 and the content of the description there becomes the content at the same time made of the present registration. This also applies to the end product one in one Encapsulated semiconductor housing or integrated Circuit with bracket or ladder frame and external connections, as shown there.

Es ist ersichtlich, daß die Breite B2 mindestens den 70 % der Gesamtbandbreite B1 aus Figur 2 entspricht und daß in diesem Bandbreitenbereich die Oberflächen der Schichten 7 und 6 bzw. der Unterseite von 4 zueinander parallel wind. It can be seen that the width B2 is at least 70% of the total bandwidth B1 from FIG. 2 corresponds and that in this bandwidth range the surfaces of the Layers 7 and 6 or the underside of 4 wind parallel to one another.

Aus dem Vergleich der Figuren 1 bis 3 ergibt sich auch, daß ,die gesamte Schichtdickentoleranz ist: (S2 # T2) - (S1 # T1) = (S2 - S1) # (T2 + T1), worin bedeutet T2 die Toleranz für das spanende Abtragen, insbesondere Schältoleranz # 3 µm T1 die Toleranz für die Verformung im ersten Verfahrensschritt, insbesondere durch Walzen # 3 µm = Gesamttoterenz von maximal + 6 µm bei einer beliebig wählbaren Soll dicke für die Lotschicht 7. A comparison of FIGS. 1 to 3 also shows that the total layer thickness tolerance is: (S2 # T2) - (S1 # T1) = (S2 - S1) # (T2 + T1), where T2 means the tolerance for the metal removal, in particular peeling tolerance # 3 µm T1 is the tolerance for the deformation in the first process step, in particular by rolling # 3 µm = total deadness of a maximum of + 6 µm with an arbitrarily selectable Target thickness for the solder layer 7.

In der Eigur 4 wird die mit der @rfindung erreichte Schichtdickenverteilung ersichtlich, d.h. hier insbesondere die sehr geringe Streuung der Schichtdicke trotz Verwendung eines beliebig dicken Vormaterials nach Figur 1, wenl auch in möglichst enger Toleranz bezüglich der Dicke und dei Zuordnung beliebiger Schichtdicken innerhalb des Verbundes. The layer thickness distribution achieved with the invention is shown in Figure 4 visible, i.e. here in particular the very low scatter of the layer thickness despite Use of a starting material of any thickness according to FIG. 1, if possible also close tolerance with regard to the thickness and the assignment of any desired layer thicknesses within of the association.

In Figur 4 sind auf der Abszisse die bevorzugten Schichtdicken und auf der Ordinate die Toleranzen aufgetragen. In FIG. 4, the preferred layer thicknesses and are on the abscissa the tolerances are plotted on the ordinate.

Bberhalb und unterhalb sind dabei schraffiert die außerhalb lieqenden loleranzen zu entnchmen. Above and below those outside are hatched to remove tolerances.

Abwandlungen des Ausführungsbeispiels können selbstverstündlich vorgenommen werden, ohne hierdurch den Rahmen der Erfindung zu verlassen.Modifications of the exemplary embodiment can of course be made without thereby departing from the scope of the invention.

Claims (4)

"Verfahren zur Herstellung eines Halbzeuges in Bandform" Patentansprüche 1. Verfahren zur Herstellung eines Halbzeuges in Bandform für die Erzeugung von mit einer Lotschicht versehenen Deckeln zum Verschließen von Gehäusen aus keramischen Wertstoff, in denen ein Halbleiter oder ein integrierter Schaltkreis angeordnet ist, wobei der Deckel aus einem Metallträger besteht, dessen thermischer Ausdehnungskoe fiziert, demejenigen des Gehäusewerkstoffe angepaßt ist und der zwischen dem Metallträger und der Lotschicht eine Lothilfsschicht aufweist, dadurch gekennzeichnet, daß auf einem bandförmigem metallträger eine Lothilfsschicht aus Kupfer, Kupferlegierung, Nickel oder Nickellegirung dur h Waizpiattieren aufgebracht wird unter Einhaltung einer Gesamtdickentoleranz dieses Verbundes von weniger als # 3µ bei einer Gesamtdicke dieser Verbundes von 0,1 bis 0,5 min, und daß die auf die Lothilfsschichl im Aufschmelzverfahren aufgebrachte Leischicht mit einem Dickenübermaß von wenigstens 10% der Solldicke in einem Bereich, der sich symmetrisch beiderseits der Bandmitle erstreckt und mindestens 70 % der Gesamtbandbreite beträgt uns daß die Lotschicht durch spanendes Abtragen au V die Solldicke gebracht wird mit der Maßgabe, daß die Gaze direktoleranz für den beloteten Metallträger weniger als # 3 µ beträgt. "Process for the production of a semi-finished product in strip form" claims 1. Process for the production of a semi-finished product in strip form for the production of Lids provided with a layer of solder for closing ceramic housings Recyclable material in which a semiconductor or an integrated circuit is arranged is, wherein the cover consists of a metal support, the thermal expansion coefficient ficated, which is adapted to that of the housing materials and that between the metal support and the solder layer has an auxiliary solder layer, characterized in that on a band-shaped metal carrier an auxiliary soldering layer made of copper, copper alloy, Nickel or nickel alloy is applied by waizpiating while observing a total thickness tolerance of this compound of less than # 3µ with a total thickness this bond from 0.1 to 0.5 min, and that on the soldering auxiliary layer in the melting process applied body layer with a thickness excess of at least 10% of the nominal thickness in an area that extends symmetrically on both sides of the belt center and at least 70% of the total bandwidth is that the solder layer is removed by machining au V the nominal thickness is brought with the proviso that the gauze direct tolerance for the soldered metal carrier is less than # 3 µ. ?. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Lotschicht im Hochfrequenz-Aufschmelzverfahren aufgebracht wird.?. Method according to Claim 1, characterized in that the solder layer is applied in the high-frequency melting process. 3. Verfahren nach den Ansprüchen 1 und/oder 2, dadurch ge kennzeichnet, daß die Lotschicht durch-Schalen auf die Soildicke abgetragen wird.3. The method according to claims 1 and / or 2, characterized in that that the solder layer is removed by shells on the soil thickness. 4. Verfahren nach einem oder mehreren der vorhergehenden An: prüchen, dadurch gekennzeichnet, daß aus dem Halbzeug die Deckel ausgestanzt werden.4. Procedure according to one or more of the preceding claims: check, characterized in that the lids are punched out of the semi-finished product.
DE19803042425 1980-11-11 1980-11-11 semi-finished solder coated strip - with soldering aid layer on metal carrier for solder layer machined to close thickness tolerance Withdrawn DE3042425A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19803042425 DE3042425A1 (en) 1980-11-11 1980-11-11 semi-finished solder coated strip - with soldering aid layer on metal carrier for solder layer machined to close thickness tolerance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803042425 DE3042425A1 (en) 1980-11-11 1980-11-11 semi-finished solder coated strip - with soldering aid layer on metal carrier for solder layer machined to close thickness tolerance

Publications (1)

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DE3042425A1 true DE3042425A1 (en) 1982-06-24

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0153191A2 (en) * 1984-02-20 1985-08-28 NGK Spark Plug Co. Ltd. Zirconia-metal composite bodies

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0153191A2 (en) * 1984-02-20 1985-08-28 NGK Spark Plug Co. Ltd. Zirconia-metal composite bodies
EP0153191A3 (en) * 1984-02-20 1987-02-04 NGK Spark Plug Co. Ltd. Zirconia-metal composite bodies

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