DE29824631U1 - Magneto-Random Access Memory (MRAM) matrix - Google Patents

Magneto-Random Access Memory (MRAM) matrix

Info

Publication number
DE29824631U1
DE29824631U1 DE29824631U DE29824631U DE29824631U1 DE 29824631 U1 DE29824631 U1 DE 29824631U1 DE 29824631 U DE29824631 U DE 29824631U DE 29824631 U DE29824631 U DE 29824631U DE 29824631 U1 DE29824631 U1 DE 29824631U1
Authority
DE
Germany
Prior art keywords
power supply
supply line
matrix
magneto
random access
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE29824631U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Priority to DE29824631U priority Critical patent/DE29824631U1/en
Publication of DE29824631U1 publication Critical patent/DE29824631U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Description

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßtThe description text was not recorded electronically

Claims (6)

1. Matrix für einen Magneto-Random Access Memory oder dgl. zur Steuerung von Bau­ elementen mit einer ersten Stromzuleitung und einer zweiten Stromzuleitung, die sich an einem Bauelement überschneiden, dadurch gekennzeichnet, daß die zweite Stromzuleitung (2.1, 2.2, 2.3) auf einem Abschnitt (2.11, 2.12, 2.13; 2.21, 2.22, 2.23; 2.31, 232, 2.33) im Bereich des Bauelements (3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9) parallel zu der ersten Stromzuleitung (1.1, 1.2, 1.3) angeordnet ist.1. Matrix for a magneto-random access memory or the like. For controlling components with a first power supply line and a second power supply line, which overlap on a component, characterized in that the second power supply line ( 2.1 , 2.2 , 2.3 ) on one Section ( 2.11 , 2.12 , 2.13 ; 2.21 , 2.22 , 2.23 ; 2.31 , 232 , 2.33 ) in the area of the component ( 3.1 , 3.2 , 3.3 , 3.4 , 3.5 , 3.6 , 3.7 , 3.8 , 3.9 ) parallel to the first power supply ( 1.1 , 1.2 , 1.3 ) is arranged. 2. Matrix nach Anspruch 1, dadurch gekennzeichnet, daß eine Reihe von ersten Stromzuleitungen (1.1, 1.2, 1.3) und eine Reihe von zweiten Stromzuleitungen (2.1, 2.2, 2.3) und eine Gruppe von Bauelementen (3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9) vorgesehen sind, wobei jede erste Stromzuleitung (1.1, 1.2, 1.3) jede zweite Stromzuleitung (2.2, 2.2, 2.3) an einem Bauelement (3.1, . . ., 3.9) überschneidet.2. Matrix according to claim 1, characterized in that a series of first power supply lines ( 1.1 , 1.2 , 1.3 ) and a series of second power supply lines ( 2.1 , 2.2 , 2.3 ) and a group of components ( 3.1 , 3.2 , 3.3 , 3.4 , 3.5 , 3.6 , 3.7 , 3.8 , 3.9 ) are provided, with each first power supply line ( 1.1 , 1.2 , 1.3 ) overlapping every second power supply line ( 2.2 , 2.2 , 2.3 ) on a component ( 3.1 , ... , 3.9 ). 3. Matrix mach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die zweite Stromzuleitung (2.1, 2.2, 2.3) mäanderförmig ausgebildet ist.3. Matrix mach claim 1 or 2, characterized in that the second power supply line ( 2.1 , 2.2 , 2.3 ) is meandering. 4. Matrix nach Anspruch 3, dadurch gekennzeichnet, daß die Mäanderanordnung der zweiten Stromzuleitung (2.1, 2.2, 2.3) im Bereich der er­ sten Stromzuleitung (1.1, 1.2, 1.3) den parallelen Abschnitt (2.11, 2.12, 2.13; 2.21, 2.22, 2.23; 2.31, 232, 2.33) aufweist.4. Matrix according to claim 3, characterized in that the meandering arrangement of the second power supply line ( 2.1 , 2.2 , 2.3 ) in the area of the most power supply line ( 1.1 , 1.2 , 1.3 ) the parallel section ( 2.11 , 2.12 , 2.13 ; 2.21 , 2.22 , 2.23 ; 2.31 , 232 , 2.33 ). 5. Matrix nach Anspruch 4, dadurch gekennzeichnet, daß die ersten Stromzuleitungen (1.1, 1.2, 1.3) eine alternierende Stromeinprägung (11, 12, 13) aufweisen. 5. Matrix according to claim 4, characterized in that the first power supply lines ( 1.1 , 1.2 , 1.3 ) have an alternating current impression ( 11 , 12 , 13 ). 6. Matrix nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Bauelemente (3.1, . . ., 3.9) magnetische Bauelemente sind.6. Matrix according to one of the preceding claims, characterized in that the components ( 3.1 , ... , 3.9 ) are magnetic components.
DE29824631U 1998-04-24 1998-04-24 Magneto-Random Access Memory (MRAM) matrix Expired - Lifetime DE29824631U1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE29824631U DE29824631U1 (en) 1998-04-24 1998-04-24 Magneto-Random Access Memory (MRAM) matrix

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19818483A DE19818483A1 (en) 1998-04-24 1998-04-24 Matrix for magneto-random-access-memory or MRAM for controlling components enables components to be addressed or switched with low current levels
DE29824631U DE29824631U1 (en) 1998-04-24 1998-04-24 Magneto-Random Access Memory (MRAM) matrix

Publications (1)

Publication Number Publication Date
DE29824631U1 true DE29824631U1 (en) 2002-02-28

Family

ID=7865749

Family Applications (2)

Application Number Title Priority Date Filing Date
DE29824631U Expired - Lifetime DE29824631U1 (en) 1998-04-24 1998-04-24 Magneto-Random Access Memory (MRAM) matrix
DE19818483A Withdrawn DE19818483A1 (en) 1998-04-24 1998-04-24 Matrix for magneto-random-access-memory or MRAM for controlling components enables components to be addressed or switched with low current levels

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19818483A Withdrawn DE19818483A1 (en) 1998-04-24 1998-04-24 Matrix for magneto-random-access-memory or MRAM for controlling components enables components to be addressed or switched with low current levels

Country Status (1)

Country Link
DE (2) DE29824631U1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6590803B2 (en) * 2001-03-27 2003-07-08 Kabushiki Kaisha Toshiba Magnetic memory device
JP4729836B2 (en) 2003-03-28 2011-07-20 Ｔｄｋ株式会社 Magnetic storage cell, magnetic memory device, and method of manufacturing magnetic memory device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805140A (en) * 1986-11-21 1989-02-14 Westinghouse Electric Corp. Cross-tie random access memory

Also Published As

Publication number Publication date
DE19818483A1 (en) 1999-10-28

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Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 20020404

R150 Term of protection extended to 6 years

Effective date: 20020515

R151 Term of protection extended to 8 years

Effective date: 20040510

R152 Term of protection extended to 10 years

Effective date: 20060512

R071 Expiry of right