DE29819349U1 - Semiconductor circuit arrangement, in particular high-current converters with a low intermediate circuit voltage - Google Patents

Semiconductor circuit arrangement, in particular high-current converters with a low intermediate circuit voltage

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Publication number
DE29819349U1
DE29819349U1 DE29819349U DE29819349U DE29819349U1 DE 29819349 U1 DE29819349 U1 DE 29819349U1 DE 29819349 U DE29819349 U DE 29819349U DE 29819349 U DE29819349 U DE 29819349U DE 29819349 U1 DE29819349 U1 DE 29819349U1
Authority
DE
Germany
Prior art keywords
arrangement
level
semiconductor circuit
arrangement according
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE29819349U
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German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE29819349U priority Critical patent/DE29819349U1/en
Publication of DE29819349U1 publication Critical patent/DE29819349U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/144—Stacked arrangements of planar printed circuit boards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Combinations Of Printed Boards (AREA)

Description

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßtThe description text was not recorded electronically

Claims (10)

1. Halbleiter-Schaltungsanordnung, insbesondere Hochstrom­ umrichter mit niedriger Zwischenkreispannung, enthaltend:
  • 1. eine erste Anordnungsebene (E1) mit einer Leistungsein­ heit mit auf der Oberseite eines Substrats (S), insbe­ sondere eines DCB-Substrats, angeordneten und mit diesem kontaktierten Halbleitern (T);
  • 2. eine zweite, oberhalb zu der ersten gering beabstandete, Anordnungsebene (E2) mit auf der Oberseite einer Zwi­ schenkreis-Leiterplatte (ZP), insbesondere einer Multi­ layer-Leiterplatte, angeordneten und mit dieser kontak­ tierten Zwischenkreis-Bauelementen (C; L);
  • 3. eine gegenseitige elektrische Funktions-Kontaktverbindung der ersten Anordnungsebene (E1) mit der zweiten Anord­ nungsebene (E2);
  • 4. eine Ausbildung des Substrates (S) mit einem Leiterbah­ nen-Layout sowohl an der Oberseite (S1) als auch an der Unterseite (S2) seines Isolations-Zwischenträgers (S3);
  • 5. eine Durch- und/oder Seitenrand-Kontaktierung zwischen den Leiterbahnen der Oberseite (S1) einerseits und der Unterseite (S2) andererseits.
1. Semiconductor circuit arrangement, in particular high-current converter with a low intermediate circuit voltage, comprising:
  • 1. a first arrangement level (E1) with a power unit arranged on the top of a substrate (S), in particular a DCB substrate, arranged and contacted with semiconductors (T);
  • 2. a second, above the first, slightly spaced, arrangement level (E2) with on the upper side of an intermediate circuit circuit board (ZP), in particular a multi-layer circuit board, arranged and contacted with this intermediate circuit components (C; L) ;
  • 3. a mutual electrical functional contact connection of the first arrangement level (E1) with the second arrangement level (E2);
  • 4. an embodiment of the substrate (S) with a printed circuit layout both on the top (S1) and on the bottom (S2) of its insulation intermediate carrier (S3);
  • 5. a through and / or side edge contact between the conductor tracks of the top (S1) on the one hand and the bottom (S2) on the other.
2. Halbleiter-Schaltungsanordnung nach Anspruch 1, enthal­ tend:
  • 1. eine Ausbildung der Unterseite (S2) des Substrats (5) als ein Gleichstrom-Anschluß, insbesondere Massepotential- Anschluß (GND), der Leistungseinheit.
2. Semiconductor circuit arrangement according to claim 1, containing tend:
  • 1. a design of the underside (S2) of the substrate ( 5 ) as a direct current connection, in particular ground potential connection (GND), the power unit.
3. Halbleiter-Schaltungsanordnung nach Anspruch 1 und/oder 2, enthaltend:
  • 1. eine, insbesondere elektrisch unisolierte, Auflage der Unterseite (S2) des Substrats (S) auf einer Kühleinheit (KE).
3. A semiconductor circuit arrangement according to claim 1 and / or 2, comprising:
  • 1. an, in particular electrically non-insulated, support of the underside (S2) of the substrate (S) on a cooling unit (KE).
4. Halbleiter-Schaltungsanordnung nach zumindest einem der Ansprüche 1-3, enthaltend:
  • 1. zu der zweiten Anordnungsebene (E2), insbesondere deren Zwischenkreis-Leiterplatte (ZP), geführte äußere Wechsel- bzw. Drehstrom-Anschlüsse (U; V; W) bzw. Gleichstrom-An­ schlüsse (Batt1; Batt2; GND).
4. A semiconductor circuit arrangement according to at least one of claims 1-3, comprising:
  • 1. to the second arrangement level (E2), in particular the intermediate circuit circuit board (ZP), guided external AC or three-phase connections (U; V; W) or direct current connections (Batt1; Batt2; GND).
5. Halbleiter-Schaltungsanordnung nach zumindest einem der Ansprüche 1-4, enthaltend:
  • 1. eine gegenseitige elektrische Funktions-Kontaktverbindung beim Zusammenbau der ersten Anordnungsebene (E1) mit der zweiten Anordnungsebene (E2) mittels aus der einen Anord­ nungsebene (E1 bzw. E2) vorstehender, in korrespondie­ rende Kontaktaufnahmen (KA) der anderen Anordnungsebene (E2 bzw. E1) einpreßbarer Kontaktstifte (KS).
5. A semiconductor circuit arrangement according to at least one of claims 1-4, comprising:
  • 1. a mutual electrical functional contact connection when assembling the first arrangement level (E1) with the second arrangement level (E2) by means of one arrangement level (E1 or E2) above, in corresponding contacts (KA) of the other arrangement level (E2 or E1) press-in contact pins (KS).
6. Halbleiter-Schaltungsanordnung nach Anspruch 5, enthal­ tend:
  • 1. eine Aufnahme des Substrats (S) innerhalb zumindest eines elektrisch isolierenden Rahmens (KR1-R4), insbesondere Kunststoff-Rahmens, und eine Aufnahme der Kontaktstifte (KS) in den Rahmen (KR1-R4) mit gegen die zweite Anord­ nungsebene (2) vorstehenden und in deren Kontaktaufnahmen (KA) beim gegenseitigen Zusammenbau der Anordnungsebenen (E1 bzw. E2) einpreßbaren freien Kontaktstift-Enden (KS1).
6. A semiconductor circuit arrangement according to claim 5, including:
  • 1. a recording of the substrate (S) within at least one electrically insulating frame (KR1-R4), in particular plastic frame, and a recording of the contact pins (KS) in the frame (KR1-R4) with against the second arrangement level ( 2nd ) above and in their contacts (KA) during the mutual assembly of the arrangement levels (E1 or E2) free contact pin ends (KS1).
7. Halbleiter-Schaltungsanordnung nach zumindest einem der Ansprüche 1-6, enthaltend:
  • 1. eine Kontaktierung der Zwischenkreis-Bauelemente (C; L) mit der Zwischenkreis-Leiterplatte (ZP) der zweiten An­ ordnungsebene (E2) mittels Durchkontaktierung der elek­ trischen Anschlüsse (C1, C2; L1, L2) der Zwischenkreis-Bau­ elemente (C; L) bis zur Unterseite der Zwischenkreis-Lei­ terplatte (ZP) und Verbindung, insbesondere Schwallötung, mit entsprechenden Unterseite-Leiterbahnen.
7. A semiconductor circuit arrangement according to at least one of claims 1-6, comprising:
  • 1. a contacting of the DC link components (C; L) with the DC link circuit board (ZP) of the second order level (E2) by plated-through holes in the electrical connections (C1, C2; L1, L2) of the DC link components (C ; L) to the underside of the intermediate circuit Lei terplatte (ZP) and connection, in particular wave soldering, with corresponding underside conductor tracks.
8. Halbleiter-Schaltungsanordnung nach zumindest einem der Ansprüche 1-7, enthaltend:
  • 1. eine dritte, oberhalb zu der zweiten beabstandete, Anord­ nungsebene (E3) mit einer von einem äußeren Anordnungs­ rahmen (AR) aufgenommenen Halterungsplatte (AL1), insbe­ sondere gut wärmeleitenden Aluminiumplatte;
  • 2. mit einer Positionssicherung der ihrem Kontaktierungsende abgewandten freien Bauenden der Zwischenkreis-Bauelemente (C; L) durch die Halterungsplatte (AL1), insbesondere mit einer formschlüssigen, beim Zusammenbau der zweiten und dritten Anordnungsebene (E2 bzw. E3) auf die freien Bauenden aufsteckbaren Umfassung der Zwischenkreis-Bau­ elemente (C; L).
8. A semiconductor circuit arrangement according to at least one of claims 1-7, comprising:
  • 1. a third, above to the second spaced, arrangement level (E3) with a mounting plate (AL) received from an outer arrangement frame (AR), in particular special heat-conducting aluminum plate;
  • 2. with securing the position of the free ends of the intermediate circuit components (C; L) facing away from their contacting end through the mounting plate (AL1), in particular with a form-fitting, attachable to the free ends when assembling the second and third arrangement levels (E2 or E3) Enclosure of the DC link components (C; L).
9. Halbleiter-Schaltungsanordnung nach Anspruch 8, enthal­ tend:
  • 1. eine oberhalb der Halterungsplatte (AL1) von dieser auf­ genommen, mit der Leistungseinheit der ersten Anordnungs­ ebene (E1) in Funktionsverbindung stehende Ansteuerein­ heit, insbesondere auf einer Ansteuer-Leiterplatte (SP).
9. A semiconductor circuit arrangement according to claim 8, including:
  • 1. a above the mounting plate (AL1) taken from this, with the power unit of the first arrangement level (E1) functionally connected control unit, in particular on a control circuit board (SP).
10. Halbleiter-Schaltunganordnung nach zumindest einem der Ansprüche 1-9, enthaltend:
  • 1. eine Verwendung als Umrichter zwischen zumindest einem batteriegestützten Gleichstrom-Bordnetz mit Gleichstrom- Anschlüssen (Batt1; Batt2; GND) und einem Starter-Genera­ tors (SG) mit Drehstrom-Anschlüssen (U; V; W) in einem Kraftfahrzeug.
10. The semiconductor circuit arrangement according to at least one of claims 1-9, comprising:
  • 1. Use as a converter between at least one battery-based direct current electrical system with direct current connections (Batt1; Batt2; GND) and a starter generator (SG) with three-phase connections (U; V; W) in a motor vehicle.
DE29819349U 1998-10-30 1998-10-30 Semiconductor circuit arrangement, in particular high-current converters with a low intermediate circuit voltage Expired - Lifetime DE29819349U1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE29819349U DE29819349U1 (en) 1998-10-30 1998-10-30 Semiconductor circuit arrangement, in particular high-current converters with a low intermediate circuit voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE29819349U DE29819349U1 (en) 1998-10-30 1998-10-30 Semiconductor circuit arrangement, in particular high-current converters with a low intermediate circuit voltage

Publications (1)

Publication Number Publication Date
DE29819349U1 true DE29819349U1 (en) 1999-12-09

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0997943A2 (en) * 1998-10-30 2000-05-03 Siemens Aktiengesellschaft Semiconductor circuit device, in particular high current converter
FR2803138A1 (en) * 1999-12-27 2001-06-29 Mitsubishi Electric Corp CONTINUOUS CURRENT TO AC CONVERTER
EP1231639A1 (en) * 2000-08-18 2002-08-14 Mitsubishi Denki Kabushiki Kaisha Power module
EP1450404A3 (en) * 2003-02-18 2004-09-01 Semikron Elektronik GmbH Assembly in pressure contact with a power semiconductor module
DE102005050139A1 (en) * 2005-10-19 2007-04-26 Siemens Ag Controller with rivet for electrical machine, especially for motor vehicle, has supporting element for electronic components and connecting element in form of rivet, whereby supporting element is riveted to connecting element
DE102010006850A1 (en) * 2010-02-04 2011-08-04 Compact Dynamics GmbH, 82319 Electronic assembly for switching electrical power
US8102653B2 (en) 2007-03-19 2012-01-24 Toyota Jidosha Kabushiki Kaisha Electric unit having capacitor
DE10301268B4 (en) * 2002-01-16 2014-02-13 Panasonic Corporation capacitor module
DE102013103866B3 (en) * 2013-04-17 2014-05-22 Semikron Elektronik Gmbh & Co. Kg Power semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4237632A1 (en) * 1992-11-07 1994-05-11 Export Contor Ausenhandelsgese Circuit arrangement
DE4305793A1 (en) * 1993-02-25 1994-09-01 Telefunken Microelectron Power module
DE4446594A1 (en) * 1994-12-24 1996-06-27 Bosch Gmbh Robert Electric device
DE19645636C1 (en) * 1996-11-06 1998-03-12 Telefunken Microelectron Power module for operating electric motor with speed and power control
DE19646004A1 (en) * 1996-11-07 1998-05-14 Siemens Ag Electronic switching apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4237632A1 (en) * 1992-11-07 1994-05-11 Export Contor Ausenhandelsgese Circuit arrangement
DE4305793A1 (en) * 1993-02-25 1994-09-01 Telefunken Microelectron Power module
DE4446594A1 (en) * 1994-12-24 1996-06-27 Bosch Gmbh Robert Electric device
DE19645636C1 (en) * 1996-11-06 1998-03-12 Telefunken Microelectron Power module for operating electric motor with speed and power control
DE19646004A1 (en) * 1996-11-07 1998-05-14 Siemens Ag Electronic switching apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP 57072357 A.,In: Patent Abstracts of Japan *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0997943A3 (en) * 1998-10-30 2003-05-28 Siemens Aktiengesellschaft Semiconductor circuit device, in particular high current converter
EP0997943A2 (en) * 1998-10-30 2000-05-03 Siemens Aktiengesellschaft Semiconductor circuit device, in particular high current converter
FR2803138A1 (en) * 1999-12-27 2001-06-29 Mitsubishi Electric Corp CONTINUOUS CURRENT TO AC CONVERTER
US6940164B1 (en) 2000-08-18 2005-09-06 Mitsubishi Denki Kabushiki Kaisha Power module
EP1231639A4 (en) * 2000-08-18 2003-07-02 Mitsubishi Electric Corp Power module
EP1231639A1 (en) * 2000-08-18 2002-08-14 Mitsubishi Denki Kabushiki Kaisha Power module
DE10301268B4 (en) * 2002-01-16 2014-02-13 Panasonic Corporation capacitor module
EP1450404A3 (en) * 2003-02-18 2004-09-01 Semikron Elektronik GmbH Assembly in pressure contact with a power semiconductor module
DE102005050139A1 (en) * 2005-10-19 2007-04-26 Siemens Ag Controller with rivet for electrical machine, especially for motor vehicle, has supporting element for electronic components and connecting element in form of rivet, whereby supporting element is riveted to connecting element
DE102005050139B4 (en) * 2005-10-19 2015-04-02 Continental Automotive Gmbh Control device with rivet
US8102653B2 (en) 2007-03-19 2012-01-24 Toyota Jidosha Kabushiki Kaisha Electric unit having capacitor
DE112008000691B4 (en) * 2007-03-19 2012-03-15 Toyota Jidosha Kabushiki Kaisha Electrical device with capacitor
DE102010006850A1 (en) * 2010-02-04 2011-08-04 Compact Dynamics GmbH, 82319 Electronic assembly for switching electrical power
WO2011095309A2 (en) 2010-02-04 2011-08-11 Compact Dynamics Gmbh Electronic subassembly for switching electric power
DE102013103866B3 (en) * 2013-04-17 2014-05-22 Semikron Elektronik Gmbh & Co. Kg Power semiconductor device

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Effective date: 20000113

R150 Term of protection extended to 6 years

Effective date: 20020306

R151 Term of protection extended to 8 years

Effective date: 20050203

R152 Term of protection extended to 10 years

Effective date: 20070104

R071 Expiry of right