DE2962376D1 - Method of operating a raster-scan electron beam lithographic system - Google Patents

Method of operating a raster-scan electron beam lithographic system

Info

Publication number
DE2962376D1
DE2962376D1 DE7979900362T DE2962376T DE2962376D1 DE 2962376 D1 DE2962376 D1 DE 2962376D1 DE 7979900362 T DE7979900362 T DE 7979900362T DE 2962376 T DE2962376 T DE 2962376T DE 2962376 D1 DE2962376 D1 DE 2962376D1
Authority
DE
Germany
Prior art keywords
raster
operating
electron beam
lithographic system
beam lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979900362T
Other languages
English (en)
Inventor
David Shepard Alles
Rae Alfred Urquhart Mac
Roger Fabian Wedgwood Pease
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE2962376D1 publication Critical patent/DE2962376D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
DE7979900362T 1978-04-07 1979-03-26 Method of operating a raster-scan electron beam lithographic system Expired DE2962376D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/894,420 US4163155A (en) 1978-04-07 1978-04-07 Defining a low-density pattern in a photoresist with an electron beam exposure system
PCT/US1979/000191 WO1979000900A1 (en) 1978-04-07 1979-03-26 Low-density pattern in a photoresist

Publications (1)

Publication Number Publication Date
DE2962376D1 true DE2962376D1 (en) 1982-05-06

Family

ID=25403057

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979900362T Expired DE2962376D1 (en) 1978-04-07 1979-03-26 Method of operating a raster-scan electron beam lithographic system

Country Status (6)

Country Link
US (1) US4163155A (de)
EP (1) EP0012765B1 (de)
JP (1) JPS6237808B2 (de)
CA (1) CA1123120A (de)
DE (1) DE2962376D1 (de)
WO (1) WO1979000900A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4231811A (en) * 1979-09-13 1980-11-04 Intel Corporation Variable thickness self-aligned photoresist process
EP0053225B1 (de) * 1980-11-28 1985-03-13 International Business Machines Corporation Elektronenstrahlsystem und Verwendungsverfahren
US4494004A (en) * 1980-11-28 1985-01-15 International Business Machines Corporation Electron beam system
DE3138896A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Elektronenoptisches system mit vario-formstrahl zur erzeugung und messung von mikrostrukturen
US4585342A (en) * 1984-06-29 1986-04-29 International Business Machines Corporation System for real-time monitoring the characteristics, variations and alignment errors of lithography structures
US6653645B1 (en) * 2000-05-15 2003-11-25 Hsing-Yao Chen Deflection lens device for electron beam lithography
US7075093B2 (en) * 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
US10534115B1 (en) * 2017-09-22 2020-01-14 Facebook Technologies, Llc Gray-tone electron-beam lithography
US11220028B1 (en) 2018-03-08 2022-01-11 Facebook Technologies, Llc Method of manufacture for thin, multi-bend optics by compression molding
US10976483B2 (en) 2019-02-26 2021-04-13 Facebook Technologies, Llc Variable-etch-depth gratings
US11309163B2 (en) * 2019-11-07 2022-04-19 Applied Materials, Inc. Multibeamlet charged particle device and method
US11709422B2 (en) 2020-09-17 2023-07-25 Meta Platforms Technologies, Llc Gray-tone lithography for precise control of grating etch depth

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3801792A (en) * 1973-05-23 1974-04-02 Bell Telephone Labor Inc Electron beam apparatus
US3914608A (en) * 1973-12-19 1975-10-21 Westinghouse Electric Corp Rapid exposure of micropatterns with a scanning electron microscope
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
JPS5316578A (en) * 1976-07-30 1978-02-15 Toshiba Corp Electron beam exposure apparatus

Also Published As

Publication number Publication date
EP0012765B1 (de) 1982-03-31
EP0012765A1 (de) 1980-07-09
JPS55500225A (de) 1980-04-17
US4163155A (en) 1979-07-31
WO1979000900A1 (en) 1979-11-15
CA1123120A (en) 1982-05-04
JPS6237808B2 (de) 1987-08-14

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee