DE2629356C2 - Electro-optical converter for sending or receiving - Google Patents

Electro-optical converter for sending or receiving

Info

Publication number
DE2629356C2
DE2629356C2 DE2629356A DE2629356A DE2629356C2 DE 2629356 C2 DE2629356 C2 DE 2629356C2 DE 2629356 A DE2629356 A DE 2629356A DE 2629356 A DE2629356 A DE 2629356A DE 2629356 C2 DE2629356 C2 DE 2629356C2
Authority
DE
Germany
Prior art keywords
diode
diodes
metallization
electro
optical converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2629356A
Other languages
German (de)
Other versions
DE2629356A1 (en
Inventor
Michael Dr.-Ing. 3301 Wedtlenstedt Kuhn
Joerg Dr.-Ing. 3301 Schapen Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bosch Telecom GmbH
Original Assignee
AEG Telefunken Nachrichtentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AEG Telefunken Nachrichtentechnik GmbH filed Critical AEG Telefunken Nachrichtentechnik GmbH
Priority to DE2629356A priority Critical patent/DE2629356C2/en
Publication of DE2629356A1 publication Critical patent/DE2629356A1/en
Application granted granted Critical
Publication of DE2629356C2 publication Critical patent/DE2629356C2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Optical Communication System (AREA)

Description

λ2· Die Anordnung ist somit so ausgebildet, daß die vonλ2 · The arrangement is thus designed so that the of

20 der Diode 3 ausgehenden Wellenlängen die Diode 2 durchdringen können.20 wavelengths emanating from the diode 3 can penetrate the diode 2.

Die Erfindung befaßt sich mit einem elektrooptischen Bei der in der F i g. 2 dargestellten Anordnung mitThe invention is concerned with an electro-optical case in the FIG. 2 with the arrangement shown

Wandler, bestehend aus zwei Licht sehr unterschied!!- den beiden übereinander angeordneten Dioden 4 und 5Converter, consisting of two light very different !! - the two diodes 4 and 5 arranged one above the other

eher Wellenlänge emittierenden oder empfangenen handelt es sich um zwei Empfangsdioden für dierather, the wavelength emitting or receiving are two receiving diodes for the

Dioden. Solche Wandler sind z. B. bekannt durch die 23 ankommenden Signale. Die untere Metallisierung 7 desDiodes. Such converters are z. B. known from the 23 incoming signals. The lower metallization 7 of the

Literaturstelle INSPEC, Patent Associated Literature einen Diodenkontakts der oberen Diode 4 ist dabeiReference INSPEC, Patent Associated Literature a diode contact of the upper diode 4 is included

R 113-7 502-P, 1974, betreffend'. Revue Technique wieder mit einer Aussparung 8 versehen, durch weicheR 113-7 502-P, 1974, concerning '. Revue Technique again provided with a recess 8, through soft

Thomson-CSF;VoI.6,No.4,Dea 1974, S. 861 bis 884. Signale der Wellenlänge A,, für welche diese Diode 4Thomson-CSF; VoI.6, No.4, Dea 1974, pp. 861 to 884. Signals of the wavelength A ,, for which this diode 4

Durch die US-PS 39 52 265 ist ferner bekannt, Sende- durchlässig ist, zur unteren Diode 5 gelangen können,From US-PS 39 52 265 it is also known that transmission is permeable, can reach the lower diode 5,

und Empfangsdiode aus einem einzigen Halbleiterbau- 30 Die obere Diode 4 ist für den Empfang von Signalen derand receiving diode from a single semiconductor component 30 The upper diode 4 is for receiving signals from the

element zu bauen. Dabei muß allerdings zwischen Wellenlänge A2 dimensioniert Die Wellenlänge A2 istelement to build. It must, however, between wavelength A 2 dimensioned The wavelength A2

Senden und Empfangen umgeschaltet werden. größer als die Wellenlänge Ai. Die obere Diode 4 istSend and receive can be switched. greater than the wavelength Ai. The top diode 4 is

Bei optischen Nachrichtenverbindungen, insbesonde- durchlässig für die von der zweiten Diode 5 zuIn the case of optical communication links, particularly permeable to those from the second diode 5

re bei solchen, die mittels Lichtleitfasern aufgebaut sind, empfangende Wellenlänge Ai. Damit sind beide Diodenre in those which are constructed by means of optical fibers, the receiving wavelength Ai. That leaves both diodes

besteht oft die Notwendigkeit, Signale mit sehr 35 frequenzbandmäßig voneinander entkoppeltthere is often a need for signals with a frequency band that is very decoupled from one another

unterschiedlicher Wellenlänge über diese Strecke Damit man eine noch bessere Entkopplung zwischendifferent wavelength over this distance so that you can get an even better decoupling between

auszusenden oder zu empfangen. Hierfür ist es den beiden übereinander angeordneten Dioden erhältto send or receive. For this it is given to the two diodes arranged one above the other

erforderlich, daß man für die unterschiedlichen Wellen- können für die kürzeren Wellenlängen absorbierenderequired that one can absorb for the different wavelengths can for the shorter wavelengths

längen getrennte Modulations- bzw. Demodulationsein- oder reflektierende Schichten 9 bzw. 12 zwischen denlength separate modulation or demodulation input or reflective layers 9 and 12 between the

richtungen verwendet, die mit Hilfe entsprechender 40 beiden Dioden angeordnet werden.directions used, which are arranged with the help of corresponding 40 two diodes.

Filter und Koppler aufgeschaltet werden. Die Dioden können aus verschiedenen MaterialienFilters and couplers are switched on. The diodes can be made of various materials

Die Erfindung hat sich beim eingangs angeführten aufgebaut sein oder auch aus gleichem Material mitThe invention has to be constructed in the case of the initially mentioned or also of the same material

Wandler die Aufgabe gestellt, diesen so auszuführen, unterschiedlicher Konzentration hergestellt werden,Converter set the task of executing this in such a way that different concentrations are produced,

daß ohne zusätzliche Filter- und Koppelschaltungen ein Besonders vorteilhaft ist es, wenn die Dioden nicht austhat without additional filter and coupling circuits, it is particularly advantageous if the diodes are not off

getrenntes Senden oder Empfangen von Signalen bei 45 getrennten Diodenstrukturen aufgebaut sind, wie dies inseparate sending or receiving of signals when 45 separate diode structures are constructed, as shown in FIG

verschiedenen Wellenlängen möglich ist und daß ein den F i g. 1 und 2 dargestellt wurde, sondern, wenn diedifferent wavelengths is possible and that a F i g. 1 and 2 was shown, but when the

Einkoppeln in eine bestehende Lichtleitfaser-Strecke dicht benachbart angeordneten Dioden in einemCoupling into an existing fiber optic route in one closely spaced-apart diodes

mit sehr geringem Aufwand ermöglicht wird. Epitaxieprozeß direkt übereinander hergestellt werden.is made possible with very little effort. Epitaxy process can be produced directly one above the other.

Erfindungsgemäß wird dies dadurch gelöst, daß die Dies ist in der Fig.3, für zwei Dioden 10 und 11,According to the invention, this is achieved in that the die is shown in FIG. 3, for two diodes 10 and 11,

beiden Dioden übereinanderliegend in den Stecker 50 schematisch dargestellt.two diodes lying one above the other in the connector 50 shown schematically.

einer Lichtleitfaser integriert sind, wobei die Dioden- Ein erfindungsgemäß aufgebauter elektrooptischeran optical fiber are integrated, the diodes A constructed according to the invention electro-optical

kontakte zentrale Aussparungen aufweisen. Wandler kann somit in sehr einfacher Weise ohnecontacts have central recesses. Converter can thus in a very simple manner without

Anhand der Figuren soll dies im folgenden näher zusätzliche Filter- und Koppelschaltungen in eineBased on the figures, this is to be added in more detail below to additional filter and coupling circuits

erläutert werden. optische Nachrichtenübertragungsstrecke mit Lichtleit-explained. optical communication link with fiber optic

Die F i g. 1 zeigt einen schematischen Querschnitt 55 fasern eingefügt werden,
durch eine erfindungsgemäß aufgebaute Diodenanord-The F i g. 1 shows a schematic cross section of 55 fibers being inserted,
by a diode array constructed according to the invention

Hierzu 1 Blatt Zeichnungen1 sheet of drawings

Claims (3)

Patentansprüche: nung zur Verwendung auf der Sendeseite, Die gewelltenClaims for use on the transmitting side, The corrugated Linien hv stellen dabei die Strahlrichtung der optischenLines hv represent the direction of the optical beam U Elektrooptischer Wandler, bestehend aus zwei Signale dar. Die beiden Dioden 2 und 3 sind U Electro-optical converter consisting of two signals. The two diodes 2 and 3 are Licht sehr unterschiedlicher Wellenlänge emittie- übereinander angeordnet. Mit 13 ist dabei die obereLight of very different wavelengths is emitted - arranged one above the other. At 13 is the top one renden oder empfangenden Dioden, dadurch 5 Metallisierung für einen Anschlußkontakt der oberengenerating or receiving diodes, thereby 5 metallization for a connection contact of the upper gekennzeichnet, daß die beiden Dioden (2,3) Diode 2 und mit 6 die Metallisierung für den unterencharacterized in that the two diodes (2,3) diode 2 and with 6 the metallization for the lower übereinanderliegend in den Stecker einer Lichtleit- Anschlußkontakt dieser Diode 2 bezeichnet. Die untereone on top of the other in the plug of a fiber optic connection contact of this diode 2 is referred to. The lower one faser Integriert sind, wobei die Diodenkontakte Metallisierung 6 ist mit einer Aussparung 1 versehen, sofiber are integrated, the diode contacts metallization 6 is provided with a recess 1, see above zentrale Aussparungen aufweisen· daß die von der unteren Diode 3 ausgehende Strahlunghave central recesses that the radiation emanating from the lower diode 3 2. Elektrooptischer Wandler nach Anspruch 1, 10 durch diese öffnung hindurch die Diode 2 durchdringen dadurch gekennzeichnet, daß zwischen den Dioden kann. Die untere Diode 3 ist in ähnlicher Weise (2,3) eine die kürzeren Wellenlängen absorbierende aufgebaut wie die obere Diode 2, wobei ihre obere oder reflektierende Schicht (9,12) angeordnet ist Metallisierung 15 für ihre Diodenkontakte ebenfalls2. Electro-optical converter according to claim 1, 10 penetrate the diode 2 through this opening characterized in that between the diodes can. The lower diode 3 is similar (2,3) one which absorbs the shorter wavelengths is constructed like the upper diode 2, with its upper or reflective layer (9, 12) is arranged metallization 15 for their diode contacts as well 3. Elektrooptischer Wandler nach einem der eine Aussparung 14 aufweist, während die untere vorhergehenden Ansprüche, dadurch gekennzeich- 15 Metallisierung 16 für ihre Rückseitenkontakte durchgenet, daß die beiden Dioden (2, 3) durch einen hend ist Die von der Diode 3 ausgesendete Wellenlänge Epitaxiprozeß als ein Bauelement hergestellt sind. ist mit Ai und die von der Diode 2 ausgesendete3. Electro-optical converter according to one of the has a recess 14, while the lower preceding claims, characterized marked- 15 metallization 16 durchgenet for their rear-side contacts, that the two diodes (2, 3) is through a hend. The wavelength emitted by the diode 3 Epitaxial process are manufactured as a component. is with Ai and that emitted by diode 2 Wellenlänge ist mit A2 bezeichnet Αι ist dabei größer alsWavelength is denoted by A2 Αι is greater than
DE2629356A 1976-06-30 1976-06-30 Electro-optical converter for sending or receiving Expired DE2629356C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2629356A DE2629356C2 (en) 1976-06-30 1976-06-30 Electro-optical converter for sending or receiving

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2629356A DE2629356C2 (en) 1976-06-30 1976-06-30 Electro-optical converter for sending or receiving

Publications (2)

Publication Number Publication Date
DE2629356A1 DE2629356A1 (en) 1978-01-05
DE2629356C2 true DE2629356C2 (en) 1983-07-21

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DE2629356A Expired DE2629356C2 (en) 1976-06-30 1976-06-30 Electro-optical converter for sending or receiving

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19727632A1 (en) * 1997-06-28 1999-01-28 Telefunken Microelectron Optical data transmission component
DE10064599A1 (en) * 2000-12-18 2002-07-04 Infineon Technologies Ag Sender receiver for bidirectional optical news and signal transmission has blocking filter to clearly separate send and receive signals

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516479A (en) * 1978-07-21 1980-02-05 Sumitomo Electric Ind Ltd Heterojunction light receiving diode
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
FR2483608A1 (en) * 1980-05-28 1981-12-04 Lignes Telegraph Telephon Demultiplexer for light signals with different wavelengths - has photodetectors on upper and lower side of transparent support plate, which selectively absorb desired wavelength
DE3025492A1 (en) * 1980-07-04 1982-02-04 Siemens AG, 1000 Berlin und 8000 München FILTER ELEMENT FOR OPTICAL MESSAGE TECHNOLOGY
DE3046140A1 (en) * 1980-12-06 1982-07-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "SIGNAL TRANSFER METHOD, A SEMICONDUCTOR COMPONENT AND AN ELECTRO-OPTICAL COMPONENT FOR CARRYING OUT THE PROCESS"
DE3109887C2 (en) * 1981-03-14 1983-03-31 Kabelwerke Reinshagen Gmbh, 5600 Wuppertal Optical intercom system
DE3311038A1 (en) * 1983-03-25 1984-09-27 Siemens AG, 1000 Berlin und 8000 München OPTICAL TRANSMITTER AND RECEIVER DEVICE
DE3609278A1 (en) * 1986-03-19 1987-09-24 Siemens Ag INTEGRATED OPTICAL SEMICONDUCTOR ARRANGEMENT
DE3613666A1 (en) * 1986-04-23 1987-10-29 Bks Gmbh METHOD FOR BIDIRECTIONAL DATA TRANSFER AND ELECTRONIC LOCKING SYSTEM WORKING AFTER THIS
DE4033776A1 (en) * 1990-10-24 1992-05-07 Ant Nachrichtentech ARRANGEMENT FOR OPTICAL MESSAGE TRANSMISSION BETWEEN SATELLITES
DE69132764T2 (en) * 1990-11-02 2002-07-11 Norikatsu Yamauchi Semiconductor device with reflective layer
GB9507862D0 (en) * 1995-04-18 1995-05-31 Cambridge Display Tech Ltd Fabrication of organic light-emitting devices
EP0756185B1 (en) * 1995-07-26 2002-04-10 Sumitomo Electric Industries, Ltd. PD/LD module and PD module
EP0773591A3 (en) * 1995-11-13 1998-09-16 Sumitomo Electric Industries, Ltd. Light emitting/detecting module
US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
DE19823213C2 (en) * 1998-05-25 2002-02-21 Infineon Technologies Ag Bi-directional optical transmitter and receiver
DE19834090A1 (en) * 1998-07-29 2000-02-03 Heidenhain Gmbh Dr Johannes Optoelectronic transmitter and receiver unit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3952265A (en) * 1974-10-29 1976-04-20 Hughes Aircraft Company Monolithic dual mode emitter-detector terminal for optical waveguide transmission lines

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19727632A1 (en) * 1997-06-28 1999-01-28 Telefunken Microelectron Optical data transmission component
DE19727632C2 (en) * 1997-06-28 1999-10-28 Vishay Semiconductor Gmbh Transceiver for optical data transmission
DE10064599A1 (en) * 2000-12-18 2002-07-04 Infineon Technologies Ag Sender receiver for bidirectional optical news and signal transmission has blocking filter to clearly separate send and receive signals

Also Published As

Publication number Publication date
DE2629356A1 (en) 1978-01-05

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