DE2538093A1 - Halbleiterinjektionslaser - Google Patents

Halbleiterinjektionslaser

Info

Publication number
DE2538093A1
DE2538093A1 DE19752538093 DE2538093A DE2538093A1 DE 2538093 A1 DE2538093 A1 DE 2538093A1 DE 19752538093 DE19752538093 DE 19752538093 DE 2538093 A DE2538093 A DE 2538093A DE 2538093 A1 DE2538093 A1 DE 2538093A1
Authority
DE
Germany
Prior art keywords
injection lasers
semiconductor injection
semiconductor
lasers
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19752538093
Other languages
English (en)
Inventor
Ivan Ladany
Vincent Michael Cannuli
Henry Kressel
Donald Paul Marinelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2538093A1 publication Critical patent/DE2538093A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
DE19752538093 1974-09-06 1975-08-27 Halbleiterinjektionslaser Pending DE2538093A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50368374A 1974-09-06 1974-09-06

Publications (1)

Publication Number Publication Date
DE2538093A1 true DE2538093A1 (de) 1976-03-25

Family

ID=24003089

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752538093 Pending DE2538093A1 (de) 1974-09-06 1975-08-27 Halbleiterinjektionslaser

Country Status (5)

Country Link
JP (1) JPS5152793A (de)
DE (1) DE2538093A1 (de)
FR (1) FR2284205A1 (de)
GB (1) GB1500156A (de)
NL (1) NL7510504A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345186A (en) * 1976-10-05 1978-04-22 Sharp Corp Semiconductor laser
JPS5375883A (en) * 1976-12-17 1978-07-05 Nec Corp Semiconductor laser element and its production
JPS5376779A (en) * 1976-12-20 1978-07-07 Hitachi Ltd Semiconductor laser device
JPS5391593A (en) * 1977-01-24 1978-08-11 Oki Electric Ind Co Ltd Semiconductor device
JPS53134670U (de) * 1977-03-30 1978-10-25
JPS546788A (en) * 1977-06-17 1979-01-19 Nec Corp Stripe-type double hetero-junction laser element
NL180365C (nl) * 1979-06-11 1987-02-02 Philips Nv Werkwijze voor het vervaardigen van koelblokken voor halfgeleiderlasers, alsmede halfgeleiderlaser die een volgens deze werkwijze vervaardigd koelblok bevat.
JPS5753668U (de) * 1981-08-13 1982-03-29

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723903A (en) * 1971-05-13 1973-03-27 Bell Telephone Labor Inc Dynamic fm control of the transverse modes of a self-pulsing semiconductor laser
US3733561A (en) * 1971-07-27 1973-05-15 Bell Telephone Labor Inc High power, fundamental transverse mode operation in double heterostructure lasers

Also Published As

Publication number Publication date
JPS5152793A (ja) 1976-05-10
FR2284205A1 (fr) 1976-04-02
GB1500156A (en) 1978-02-08
NL7510504A (nl) 1976-03-09

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Legal Events

Date Code Title Description
OHN Withdrawal