DE2338452A1 - Analysis of multiple ionising emissions - by double 90 degree sector condenser constraining single focussed beam to detectors - Google Patents

Abstract

Rapid sequential anlysis of varying forms of radiation emission is by means of a double 90 degrees sector condenser incorporating polarity reversal facilities and constraining the particles to focus onto an articulated probe which deflects the incident beam to detector analysers. The system is also applicable to the concn. of multiple sources of irradiation on a single focus using a sector condenser assembly with a rotational capability. Process is for (1) detection and analysis of surface radiation emission; and (2) radiation implantation. The process is accurate, rapid and economical in respect of the plant required.

Description

Dr-Ing Viktor Winkler
541 Höhr-Gronzhausen

Method and device for the excitation and / or processing of surfaces with several types of Corpuscular rays in one operation as well as for Generation and concentration of corpuscular rays

By bombarding a solid surface with corpuscular beams, depending on the nature (type), energy content and current density of the beam ι

either just a stimulation of the surface or

there is also a change in the surface.

The excitation consists in the fact that photons, electrons, ions and neutral (uncharged) Particles are emitted.

The change in the surface can consist in the fact that the surface is atomized (removed), melted or during Bombard the surface with the ions in it with ion beams Absorbs structure (ion implantation).

Both processes have been known for a long time and are used in practice for a variety of purposes, including various methods and devices have already been developed.

The excitation of the surface is mainly used for analytical purposes, i.e. to determine the nature of the Surface used, during the process of surface change by beam enbeschuß_, mainly for processing applied to surfaces.

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A. Corpuscular rays bombard the plague body surfaces for analytical purposes

Bombarding the surfaces with electrons produces: Emission of photons (e.g. X-rays), secondary electrons and Auger electrons, positive and negative ions and ITeutral particles.

When bombarded with ions, photons, electrons, Secondary ions and atomized charged or neutral particles.

When the surface is bombarded with photons, X-ray fluorescence occurs, Photo and Auger electrons, photo desorption of ions and neutral particles, etc.

Every emitted particle can be measured and used to examine and control the surface. A large number of surface control methods have been developed on this basis, and a large one Number of devices built, some of which were also sold commercially are like: electron spectroscopes, electron beam micro and macro probes, ion probes, secondary ion spectrometers ^ inter alia »They are already in large numbers in industrial and research laboratories used for analysis purposes. The surface of the plague bodies is, however, very complicated, because they are due to the chemical composition, lattice structure, bonding state, absorption state, physical nature is characterized, among other things, so that the surface analysis methods known up to now, which only examine individual excitation processes, are usually not fully sufficient for the surface fully characterize.

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In practice there are usually several for this purpose

Procedure used what a large operational burden and takes a long time. In addition, the result is not always satisfactory because in the In practice, it is almost impossible to set the same surface conditions for the individual analysis methods. (The texture of the surface also changes during the individual analyzes.)

Part of the subject matter of this invention is concerned with methods and apparatus that allow simultaneously several analysis methods with different excitation processes to use or individual stimulation processes differently and in one operation with the same quality of the surface, which gives a larger number and different types of information can be.

Because in this new method and this new device, the different excitation processes are carried out simultaneously or in intermittent mode in rapid succession, in each case for one and the same point of the surface, which analysis can in a much shorter Ze ± ii _/ ji ^ a much more accurate and can be carried out with much less equipment.

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Fig. 1 Keifet such a method and device "ordering from a double-ion capacitor of known design, the theoretically by "building into each other" of two conventional capacitor capacitors were created int, u: id awar, the "building into one another" is carried out in such a way that the Plate spacing sv / i see the various plates 1-4 of the Both Gector capacitors are the same size everywhere, which is only possible by shortening the outer plates 1 and 5 ν / ird.

In Fig.1 (as well as on the following illustrations with double- or multiple sector capacitors) is a 9o sector capacitor used as a basis.

In practice, however, any other sector angle can be selected depending on the task at hand. Corresponding polarity of the plates (e.g. for positive Ions passing through from the left ion source Q1 must be plate 1 and 4 positive, plate 2 negative and when passing through for the ion source Q2 on the right, plate 3 and 2 must be positive and plate 4 negative) on the one hand, the abbreviation of the outer Plates are compensated, on the other hand the beams from both sources are focused in the same focal point and from there to be guided along the same path and in the same direction.

The two sources Q1 and Q2 can e.g. Ion sources of various Be of construction, e.g. to achieve different penetration depths; but they can also be of the same type, but for be different ion beams, e.g. different noble gas

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ions or noble gas and non-noble gas (e.g. oxygen) or negative and positive ions, etc.

Between ion sources and the sector capacitor can after. Magnetic analyzers or dynamic filters required (A1 and A2) interposed in order to obtain defined impact parameters (monoenergetic and monoisotoi) ical rays) to be able to.

Instead of the ion sources, other corpuscular sources 2.B. Electron sources attached. It is also possible, a third source, such as ion source, electron source or! Lon tgenstralilrühre (03) above the Llußeren capacitor plates 1 and install third For this purpose, a corresponding opening for the beam intersection must be left free between plates 1 and 3.

At the focal point of the double sector capacitor is the sample (P), which is heatable and adjustable.

Various detection systems for the individual emitted parts to be examined, such as detectors for secondary electrons, Auger electrons, mono-ears to measure the fluorescence rays or secondary ion detectors are attached.

In Fig.1 there is a secondary ion detector consisting of: a lens system (L1), an analyzer (niagn. or dynam. e.g. quadrupole), the actual ion detector (e.g. secondary electron multiplier (D)) and the associated

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supply and measuring electronics and possibly computer (E) _; indicated.

.e. Operation in one operation of all or some of the radiation sources or cyclic operation, ie operation of the individual radiation sources at short intervals in succession, can be used.

The various radiation detectors can also be arranged differently.

E.g. in Fig.2 there are two ion sources on the two sector capacitors inlet parts, e.g. for various noble gases

or base gases of the double sector capacitor, attached while the secondary ion detector (e.g. IT train time analyzer) above the outer plates 1, 3 of the double sector capacitor is arranged. (L1) is a focusing lens for the Secondary ion detector.

In Figure 3 the ion beam generator / is on the left Side and the secondary ion detector / on the right side of the double sector capacitor, above the capacitor is an electron beam source / mounted and on the side the sample a fluorescence monochromator / and a detector for Auger electrons;

In Fig.4 is a device consisting of a multiple sector capacitor, which allows more than three radiation sources to be used at the same time (in Fig. 4 to to 5 radiation sources).

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The multiple sector capacitor arises theoretically through the rotation of a double sector capacitor made of ATdTd, 1-3 µm the axis of symmetry of the two capacitors and by subdividing the rotational structure into a corresponding number of individual sector capacitors (e.g. in Fig. 4-/4 single sector capacitors).

The subdivision of the eotation structures is necessary to get one to make alternating (clocked) and independent operation of the individual radiation sources possible, with similar Sources of radiation it is enough just the lower l'eil of the structure (according to the rotation of the inner capacitor plates of the double sector capacitor).

At the entry points of the individual sector capacitors, different radiation sources for corpuscular rays, But also, different detectors for corpuscular particles should be attached, e.g. in Fig. 5, where also how a quadruple sector capacitor is shown in Fig.4, means (1) ion source for noble gas, (2) detector and analyzer for positive secondary ions, (3) ion source for a non-noble gas, (4) detector with analyzer for negative secondary ions, (5) electron beam source and (6) detector for secondary electrons.

The adjustable sample holder with the sample (P) is in the focal point of the quadruple sector capacitor and diagonally opposite the axis of symmetry of the quadruple sector capacitor and arranged opposite the two ion sources (1) and (3).

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B. Bombardment of the solid surface with corpuscular rays for the purpose of processing the surface

By bombarding a solid surface with fast electron beams the surface can vary depending on the nature of the solid and the surface and depending on the energy content the electron beams and the duration of the bombardment (atomized, vaporized, etched, polished), drilled, cut, melted (welded) and in some cases also changed in their physical properties (e.g. hardened) v / ground.

By bombarding a solid body with ion beams, the surface can also be removed (atomized, vaporized, etched, polished) and, if the penetration depth is smaller, it can also be drilled or melted; However, it can also change its physical properties such as hardness, passivity (resistance to weather, etc.), magnetic, light permeability, refractive index, electrical and thermal resistance (semiconductor properties) and also the chemical properties very thoroughly or even completely transform them (e.g. complete change in nature when bombarded with an ion current over 10 ions / cm ^£ ), mainly by the so-called. Ion implantation (penetration and attachment) -of ions in the surface jL

All of these machining processes as well as corresponding devices and devices for their implementation are known and for several years for a variety of technological work used.

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For some applications, machining with combined beams is necessary and also practical through repetition the machining process with the desired types of radiation feasible, which is usually time-consuming and costly is.

There are Λ / other applications of combined machining; of l'est body surfaces with different corpuscular ray en conceivable, but with today's equipment, -if it matters, for example, with the respective Corpuscular rays always point to the same point (the one up to to 2 µm can be small) and if possible at the same time or to be met at short intervals - impracticable.

This invention is also concerned, inter alia, with some combined methods and devices which enable with relatively simple means and minimal expenditure of time, to scan a surface of the body in a punctiform manner and to be worked on, each point simultaneously or at very short intervals with two or more corpuscular rays irradiated / grounded,

Drive through this new combined surface treatment process and devices also open up new fields of application. Some of them are briefly described and also form the subject of this invention, Essentially, these novel machining methods and devices, similar to the methods and devices which have already been described for the analysis of solid surfaces, however, mainly differ

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by never using more powerful ones Radiation sources (radiation cannons) built more robustly must and by the mostly larger extent and Beschaxfenhext of the samples to be processed, / provided with other sample holders and constructed for other yakuum conditions have to.

In Figure 6, for example, a device is sketched for the simultaneous Processing of a sample with two different ion beams, whereby the focusing of the beams on the surface of the Sample is made with the help of a double sector capacitor, similar to that in Fig.

The device is operated in cycle operation by changing the polarity of the capacitor plates, as indicated in Fig. 6 is changed.

To the sample surface with monoenergetic and monoisotopic Ion beams or with very specific compound ions or radical (bridging organic compounds) ions To be able to process, the corresponding ion sources are provided with analyzers or instead of the ion sources high-performance separators are used. When using analyzers or separators instead From simple ion sources it is also possible to take different types of ions from one ion source and insofar as the power of these ions is sufficient to carry out ion implantations with them.

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In Fig.7, the surface can also be equipped with a powerful Electron beam traveling along the axis of symmetry of the Double sector capacitor runs forward and also into the focal point of the sector capacitor with the help of the lens j ^ stems L1 and / or L2 is focused can be edited.

After this procedure it is possible as sketched in fig is to drill holes with the electron beam in a flat object (e.g. foil) and at the same time or directly the connections of the individual holes with up to two to rework different ion beams, e.g. polish or roughen (increase the surface of the holes) or by attaching desired ions (ion implantation), the physico-chemical properties are converted into a desired one Adjustment (e.g. increasing the corrosion resistance of the hardness ucw.) to change.

For example, as shown in Fig. 9, it is possible to use art foils or artificial leather through perforation with electron beams and additional processing of the holes with oxygen and / or carbon dioxide or other ions, porous and hydrophilic or, if desired, porous and hydrophobic or porous and hydrophobic on one side, but hydrophilic on the other side do.

In Fig.io the possibility of producing specific break diaphragms or catalyst diaphragms according to this machining process.

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The diaphragms can, for example, be made up of several stacked foils that have been perforated with electron beams and simultaneously or immediately after drilling the walls of the individual holes have been activated by ion implantation for the respective characteristic reaction.

In a similar way or according to the scheme of Fig. 9 can also specific filters for preparative or analytical purposes, especially for biochemical compounds and ev, Yiren made by ion implantation with corresponding specific organioclion molecules resp. Fragment molecules are occupied »

Last but not least, the combination of ion implantation with machining of electron beams also results in ion implantation possible for deeper upper layers.

With a device as in Figure 11, which has a quadruple sector capacitor, similar to the design from Fig. 5, e.g. ion implantations in individual Ground points or entire surfaces with four different types of ions in cyclic operation. ®

If desired, it is possible to increase the number of ion beams and thereby the types of ions to be implanted by using a corresponding multiple sector capacitor, which can be constructed similarly to the four-fold Gector capacitor shown in Fig. 11, dB (only / inner,

/ ezcA * tx {, or Χολ </ en.) -

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With this ion implantation process, it becomes complicated Semiconductors and entire integrated circuits, among other things, in a single operation and with relatively simple To produce means.

It is also possible, by superimposed irradiation with certain ion beams and possibly a simultaneous or subsequent thermal treatment, desired and to produce defined surfaces or surface parts. A simple dosage of the surface composition can be used here by setting the respective ion currents accordingly.

0. Production and concentration of corpuscular rays

Finally, all of the methods and devices mentioned for the simultaneous irradiation of solids with several Rays as under A. and B. can also be used to concentrate corpuscular rays.

For example, if in Fig. 5 or 11 the different types of ion sources replaced with ion sources of the same type one in the focal point of the double or multiple sector capacitor a correspondingly strong, uniform Ion beam.

After appropriate modification, such devices used to generate intense corpuscular rays -I4- will,

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Such methods and devices for concentration and generation of intense corpuscular rays in general and ion beams in particular, which are also the object of this invention are gaining more and more interest recently and may be used for future technology (Ion implantation, energy conversion, nuclear reaction) of importance will.

In Fig 12 is a lotation sector capacitor for concentration of the ion beams from eight powerful ion sources IQ1-8 shown in section and semi-perspective. In contrast to the devices from 4 and 5 or Fig. 11, a subdivision into segments is of the same age Blasting and continuous operation are not necessary.

For this, however, the lower hollow cone from Fig. 12, i.e., the inner eotation capacitor plate, (which is produced by! rotation of the inner plates, i.e. the plates with a smaller diameter of the double sector capacitor), in the amount of Tip of the upper hollow cone (A) of the so-called outer doping Capacitor plate (created by the rotation of the outer condensator plates of the double sector capacitor) is separated into two parts B and C, whereby when operating on the lower Part C for the purpose of! After adjusting the beams one to plate B different voltage and / or potential can be applied.

For example, when operating with positive ion beams, the upper part A receives a positive voltage, the middle part B. a negative voltage and the lower part C the same voltage as part A or a variable (adjustable) positive voltage. 409886/1432 _15_

It is convenient to use ion beams with wide rectangular To use beam cross-sections (e.g. with Pierce-shaped geometry), whereby a uniform distribution is achieved can be.

If there is the distribution of the ion beams over the entire circumference of the rotating sector capacitor is uniform and If the rays are intense enough, a subdivision of the inner liotatioiiakondensatorplatte as in A "b" b.12 carried out, should be waived.

Here it is important, as indicated in Fig. 13,

Um / s _v A / i
that the middle - of the section of the cavity between the two parts A and B approximately at the height of the tip of the upper part A should be filled with rays evenly and fully. In this case a self-adjustment of the rays arises through their charge of the same name.

Much cheaper would be / # &? - a ring-shaped construction the radiation source, which can be attached to the rotation-uektorkondensator, whereby on the one hand guarantees an even distribution of the rays and, on the other hand, the achievement of maximum power for the respective rotary sector capacitor is made possible.

In Fig.14 is a rotating sector capacitor with a Ring ion source outlined in the manner of a duoplasmatrons. Due to the rotationally symmetrical design, the construction of the ion source is particularly simple and special favorable, especially when carrying out the cooling of the various parts and when operating with high and maximum voltage. . -16-

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In addition, the outlay in terms of equipment is compared with a device with several ion sources, such as in A "b" b. 11 much smaller and the construction can be made more compact.

To continue the beam, e.g. the ion beam to the Analyzer or a beam spread in the case of overly large ones To prevent current densities, an electrostatic or electromagnetic or a combined one can also be used Lens or lens system (L1 and / or L2) can be attached.

Also the reverse process: the extraction of corpuscular rays and / or the division of a corpuscular beam into two or more single beams or on a circle (parallel, converging or diverging v / ie in Fig. 15 a-e) or the division of a liorpuscular beam mixture into positive ones and negative proportions is with a double-Gector, multiple-sector or cotation-Cektor-konde.nsator as well possible.

Reference:

German patent application P 23 ο 3 258.8 Dr V. Winkler

"Method and device for double ion beam hase spectrometers, preferably for cycle operation "

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Claims (1)

Patent claims AiJSPKUCH Method and device for irradiating plague bodies through two or three corpus lcular rays in one operation with the help of a double sector capacitor, characterized in that the sample, which is at the focal point of the double sector capacitor is located and can be adjusted and rotated in all directions by two Radiation sources that are attached in front of the inlet openings of the two sector capacitors, with slow or fast electrons or. negative or positive, noble gas or low noble gas ions by reversing the polarity of the capacitor plates in V'akt operation and by a third radiation source, which can also be an X-ray or gamma radiation source and outside of the double sector capacitor so is arranged so that its rays run along the axis of symmetry, irradiated in continuous operation in such a way that any point on the surface of the sample with all or part of the existing rays can be shot at - -18- 409886/1432 AMoPRUCIi Method and device according to claim 1, characterized in that that when using ion sources for the purpose of obtaining defined collision parameters, i.e. monoenergetic and / or monoisotopic ion beams, between Ion sources and sector capacitor a static or dynamic analyzer system is attached. CLAIM 3 Method and device for irradiating solid surfaces by more than three identical or different types of corpuscular rays in one operation, thereby ge indicates that the ICorpuscular rays for irradiating the sample, which run similar to that in claim 1, with The help of a four- or multiple-sector capacitor, its individual sector capacitors are attached rotationally symmetrically around a common axis of symmetry, and the through the corresponding subdivision of a two-part rotating body, which is created by the rotation of a double sector capacitor according to claim 1 has arisen, is produced, guided to the same point on the sample surface. CLAIM 4 Method and device according to claim 3, characterized in that that especially with similar corpuscular beams, e.g. when only ion beams are used, -19- 409886 / U32 the subdivision only on the lower part, the so-called inner part Rotary sector capacitor plate created by the notation of the inner double capacitor plates., made becomes, while the upper rope, the so-called, outer Cotation sector capacitor plate, created by rotating the outer double sector capacitor plates, not subdivided and is grounded at a common potential. CLAIM 5 Method and device according to claims 1-4, characterized in that that the. Irradiation of the sample with the purpose of analyzing the surface of the sample is carried out rand, by using different excitation processes and mechanisms for each desired point on the surface in the same work step to be examined. AIISPRODUCTION 6 Method and device according to claim 5, characterized in that that the individual Haciiweissysteme for photons, Secondary and Auger electrons and secondary ions are arranged around the specimen, a corpuscular detector but with a double sector capacitor or several with a multiple selector capacitor can be attached instead of one or more radiation sources. -2o- 4 09886/1432 AlIGPI-UCIi 7 Method and device according to claim 1-4, characterized in that that the irradiation of the sample with the purpose of its processing vie: etching, drilling, melting, ion expansion is done in such a way that for each point the sample irradiation with the different corpuscular beam en can be combined in any way, e.g. bolien and etching, drilling and ion implantation, among other things, of the boreholes or hole craters or superimposed ion implantation, etc. CLAIM 0 Process for perforating, cutting or slitting objects with simultaneous finishing of the individual ones Holes or cut surfaces and / or drilling or cutting craters, characterized in that the perforation or the cutting process according to claim 6 by an electron beam, which runs in the direction of the axis of symmetry dec double or multiple sector capacitor, is carried out and that on the same side or immediately thereafter the inner wall of the bore or the cut and / or the drilling or cutting crater by bombarding with appropriate ion beams for the purpose of magnification the surface is roughened or compensated for the purpose of increasing the strength and / or stability. BATH ORIGINAL 409886/1432 CLAIM 9 Procedure for perforating plastic foils or artificial leather, characterized in that the perforation, which is made according to claims 7 and 8, by suitable choice the ions, e.g. oxygen, carbon dioxide, etc. -ions, the hole and / or the drilling crater and thus at the corresponding many holes the entire perforated plastic film or synthetic leather hydrophilic or hydrophobic or from one side hydrophilic, hydrophobic from the other side, CLAIM 1o Process for the production of single or multilayer catalyst and separating diaphragms, characterized in that that the metal or plastic films that form the separating or catalytic converter system, according to claim 9, by tight perforation with the aid of electron beams and then or corresponding activation of the inside « walls of the bores and / or the drilling craters are produced by ion implantation. CLAIM 11 Process for the production of substance-specific filters, preferably for biological substances and viruses, characterized in that the pilter films similar to v / ie according to Ahspruch 9 perforated, but the inner walls of the bores and / or the drilling craters by ion implantation with corresponding Molecular ions are biologically activated. BATH ORIGINAL ~ ²² ~ 409886 / U32 REQUEST 12 Method and device for concentrating and focusing sound of several individual corpuscular beams, characterized in that that the corpuscular beams, which are generated by several appropriately arranged ion sources or separators, through a rotary sector capacitor, the shape of which is created by the rotation of a double sector capacitor of a known type around the axis of symmetry and the lower part of which - suction, inner rotary capacitor plate - is created by the rotation of the inner plates of the sector capacitor - below the tip of the upper part of the rotation sector capacitor, the so-called outer rotation capacitor plate, - created by the rotation of the outer plates of the double sector capacitor, is separated into two parts, namely the upper and lower inner plate and thereby an additional beam adjustment by applying voltages of different sizes and polarities to the three parts (see, for positive beams: positive voltage, for upper and lower part and negative voltage for the middle part) is possible,
be concentrated in a common focal point. -23- BATH 409886/1432 CLAIM 13 Method and device according to claim 12, characterized in that for the corpuscular beam concentrating flour densely arranged beam generators with "wide rectangular Cross-section can be used, ao that the circumference of the middle «e» 3ps of the cross-section of the capacitor interstice at the top of the outer rotating capacitor plate is fully occupied by ion beams, so that they adjust themselves through mutual influencing and thus the Division of the inner (lower) rotation capacitor plate can be omitted. AübJeüUCH H Method and device for generating, concentrating and focusing corpuscular rays, characterized in that the norpuecular rays in a specially built for this purpose ring-shaped radiation source running around the inlet opening of an ionization tank capacitor according to claims 12 and 13, e.g. in the manner of a high-frequency, gas discharge -, Penning-Discharge-, Duoplasmatron ~ etc. _v radiation source are generated, whereby the sector capacitor takes care of the collecting, the concentration, the focusing and possibly also the post-acceleration of the ICo rpuscular rays. -24 409886 / U32 AJiSPEUCH 15 Method and device for extracting and distributing a corpuscular beam or a mixture of corpuscular beams in different directions or different directions and polarities, characterized in that for this Zwacke, depending on requirements, basically the same methods and devices as in claim 1, be 3,4} were fixed 12 and 13, but uses _t changed so that the direction of the course of the beams is reversed, indeia dor be split corpuscular α tr aiii respectively, Kox'puskiiiarstralalgeiz'.i'jch in the devices of the Austrittsöffining Claims 1,3,4,12 and 13 passed baw. is withdrawn through the respective outlet opening. BATH ORIGINAL ι ^Ä · ♦ Blank page