DE2320472C2 - Gehäuseaufbau für einen durch Licht aktivierbaren Halbleitergleichrichter - Google Patents
Gehäuseaufbau für einen durch Licht aktivierbaren HalbleitergleichrichterInfo
- Publication number
- DE2320472C2 DE2320472C2 DE2320472A DE2320472A DE2320472C2 DE 2320472 C2 DE2320472 C2 DE 2320472C2 DE 2320472 A DE2320472 A DE 2320472A DE 2320472 A DE2320472 A DE 2320472A DE 2320472 C2 DE2320472 C2 DE 2320472C2
- Authority
- DE
- Germany
- Prior art keywords
- housing
- housing structure
- light
- semiconductor
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 70
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H01L31/0203—
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H01L31/1113—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Die Bonding (AREA)
- Led Device Packages (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Thyristors (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24845372A | 1972-04-28 | 1972-04-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2320472A1 DE2320472A1 (de) | 1973-11-15 |
| DE2320472C2 true DE2320472C2 (de) | 1983-05-05 |
Family
ID=22939199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2320472A Expired DE2320472C2 (de) | 1972-04-28 | 1973-04-21 | Gehäuseaufbau für einen durch Licht aktivierbaren Halbleitergleichrichter |
Country Status (7)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144541A (en) * | 1977-01-27 | 1979-03-13 | Electric Power Research Institute, Inc. | Light-activated semiconductor device package unit |
| US4131905A (en) * | 1977-05-26 | 1978-12-26 | Electric Power Research Institute, Inc. | Light-triggered thyristor and package therefore |
| US4136357A (en) * | 1977-10-03 | 1979-01-23 | National Semiconductor Corporation | Integrated circuit package with optical input coupler |
| US4257058A (en) * | 1979-07-05 | 1981-03-17 | Electric Power Research Institute, Inc. | Package for radiation triggered semiconductor device and method |
| JPS57132471U (US06248540-20010619-C00021.png) * | 1981-02-10 | 1982-08-18 | ||
| JPS589372A (ja) * | 1981-07-08 | 1983-01-19 | Mitsubishi Electric Corp | 光点弧サイリスタ |
| JPS5897864A (ja) * | 1981-12-07 | 1983-06-10 | Mitsubishi Electric Corp | 光トリガサイリスタ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3590344A (en) * | 1969-06-20 | 1971-06-29 | Westinghouse Electric Corp | Light activated semiconductor controlled rectifier |
-
1972
- 1972-04-28 US US00248453A patent/US3796881A/en not_active Expired - Lifetime
-
1973
- 1973-04-16 GB GB1823073A patent/GB1432676A/en not_active Expired
- 1973-04-21 DE DE2320472A patent/DE2320472C2/de not_active Expired
- 1973-04-26 JP JP48046866A patent/JPS4949587A/ja active Pending
- 1973-04-27 CH CH606173A patent/CH566645A5/xx not_active IP Right Cessation
- 1973-04-27 SE SE7306035A patent/SE390086B/xx unknown
- 1973-04-27 FR FR7315516A patent/FR2182224B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE390086B (sv) | 1976-11-29 |
| JPS4949587A (US06248540-20010619-C00021.png) | 1974-05-14 |
| FR2182224A1 (US06248540-20010619-C00021.png) | 1973-12-07 |
| GB1432676A (en) | 1976-04-22 |
| US3796881A (en) | 1974-03-12 |
| CH566645A5 (US06248540-20010619-C00021.png) | 1975-09-15 |
| FR2182224B1 (US06248540-20010619-C00021.png) | 1977-12-30 |
| DE2320472A1 (de) | 1973-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8126 | Change of the secondary classification |
Ipc: H01L 31/02 |
|
| 8181 | Inventor (new situation) |
Free format text: ROBERTS, JOHN S., EXPORT, PA., US |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |