DE2316097A1 - METHOD FOR AFTER-TREATMENT OF SILICON BODIES WITH AN ETCHED OXYD LAYER - Google Patents
METHOD FOR AFTER-TREATMENT OF SILICON BODIES WITH AN ETCHED OXYD LAYERInfo
- Publication number
- DE2316097A1 DE2316097A1 DE19732316097 DE2316097A DE2316097A1 DE 2316097 A1 DE2316097 A1 DE 2316097A1 DE 19732316097 DE19732316097 DE 19732316097 DE 2316097 A DE2316097 A DE 2316097A DE 2316097 A1 DE2316097 A1 DE 2316097A1
- Authority
- DE
- Germany
- Prior art keywords
- treatment
- etched
- silicon
- layer
- hydrofluoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 229910052710 silicon Inorganic materials 0.000 title claims description 9
- 239000010703 silicon Substances 0.000 title claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- -1 fluorine ions Chemical class 0.000 claims description 4
- 150000001875 compounds Chemical group 0.000 claims description 3
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 claims 2
- 239000002253 acid Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical group [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Weting (AREA)
- Silicon Compounds (AREA)
Description
Verfahren zur Nachbehandlung von Siliziumkörpern mit geätzter Oxydschicht.Process for the aftertreatment of silicon bodies with an etched oxide layer.
Die Erfindung bezieht sich auf ein Verfahren zur Behandlung von Substratkörpern aus Silizium mit einer darauf befindlichen Siliziumdioxid-Schicht, von der durch Ätzung mittels Flußsäure Anteile entfernt sind und bei dem nachfolgend die ITußsäure durch Waschen des Substratkörpers mit Flüssigkeit entfernt wird.The invention relates to a method for treating substrate bodies made of silicon with one located thereon Silicon dioxide layer from which parts have been removed by etching with hydrofluoric acid and from which the following the hydrofluoric acid by washing the substrate body with liquid Will get removed.
Silizium-Substratkörper mit darauf befindlicher Siliziumdioxid-Schicht, die ein vorgegebenes, durch Ätzen mit Flußsäure hergestelltes Muster hat, finden z.B. für Feldeffekttransistoren Verwendung. Die Siliziumdioxid-Schicht dient dabei als Gate-Oxjrdschicht. Die Oxyd schicht kann durch oberflächliche Oxydation des Siliziumkörpers oder durch Aufbringen von SiOp erzeugt sein.Silicon substrate body with silicon dioxide layer on it, which has a predefined pattern produced by etching with hydrofluoric acid can be found e.g. for field effect transistors Use. The silicon dioxide layer serves as a gate oxide layer. The oxide layer can be produced by superficial oxidation of the silicon body or by applying SiOp be.
Um der Siliziumdioxid-Schicht eine bestimmte vorgegebene Struktur zu geben und damit zuvor mit Siliziumdioxid abgedeckte Oberflächenteile des Siliziums des Substratkörpers wieder frei zu legen, wird im Rahmen eines fotolithografischen Verfahrens eine Ätzung mit Elußsäure vorgenommen. Gegebenenfalls ist die Elußsäure mit Ammoniumfluorid gepuffert. Um nach Durchführung der Ätzung die Flußsäure und weitere Pluorionen wieder zu entfernen, wurde der Substratkörper nach der Ätzung bisher mit kochendem Wasser behandelt.In order to give the silicon dioxide layer a certain predetermined structure and thus surface parts previously covered with silicon dioxide to expose the silicon of the substrate body again is a Etched with elutic acid. Optionally, the eloxic acid is buffered with ammonium fluoride. In order to after performing the Etching to remove the hydrofluoric acid and other fluorine ions, the substrate body was previously treated with boiling water after the etching.
Es ist festgestellt worden, daß durch die Kochendwasser-Behand lung des Substratkörpers, auf der sich eine fluorgeätzte Siliziumdioxid-Schicht befindet, die elektrische Qualität der Sili ziumdioxid-Schicht in sehr nachteiliger Weise verändert wird.It has been found that by the boiling water treatment of the substrate body, on which a fluorine-etched silicon dioxide layer is located, the electrical quality of the silicon dioxide layer is changed in a very disadvantageous manner.
VPA 712/1096 Joc/BlaVPA 712/1096 Joc / Bla
409842/0949409842/0949
o "2" o " 2 "
■-■■'- 2 -■ - ■■ '- 2 -
Es ist eine Aufgabe öei l:ef .Indung r für ein Verfahren zur Behandlung von Silizium-Substratkörpern mit darauf befindlicher geätzter Siliziumdioxid-Schicht einen Verfahrensschritt zur Beseitigung auch von Resten der fluorhaltigen Ätzflüssigkeit aufzufinden, durch den die elektrische Qualität der Siliziumdioxid-Schicht wenigstens nicht nachteilig geändert wird.It is an object öei l: ef .Indung r for a method for the treatment of silicon substrate bodies with befindlicher thereon etched silicon dioxide layer locate a process step for the elimination also of radicals of the fluorine-containing etchant, through which the electrical quality of the silicon dioxide layer is at least not is changed disadvantageously.
Diese Aufgabe wird bei einem wie eingangs angegebenen Verfahren erfindungsgemäß dadurch gelöst, daß. zur Entfernung der Flußsäure bzw. von Pluorionen der Substratkörper in einer Flüssigkeit behandelt wird, die eine chemische Verbindung mit Fluor bildet. ■ . . ■This task is carried out with a method as stated at the beginning according to the invention solved in that. to remove the hydrofluoric acid and / or fluorine ions from the substrate body in one Liquid that forms a chemical compound with fluorine is treated. ■. . ■
Vorzugsweise wird als Flüssigkeit, die mit Fluor eine chemische Verbindung bildet, Kaliumkarbonat oder Kaliumcyanid-Lösung verwendet. Insbesondere wird eine solche lösung mit 5?£iger Konzentration angewendet. Die Entfernung auch restlicher Fluorionen mit der wie erfindungsgemäß angegebenen Flüssigkeit kann bei Raumtemperatur durchgeführt werden. Als Behandlungszeit hat sich eine Zeitdauer von 5 bis 10 min als günstig und insbesondere als ausreichend erwiesen. ·The preferred liquid that forms a chemical compound with fluorine is potassium carbonate or potassium cyanide solution used. In particular, such a solution is available with 5? Concentration applied. The removal of residual fluorine ions with the liquid as specified according to the invention can be carried out at room temperature. A duration of 5 to 10 minutes has proven to be favorable as a treatment time in particular proved to be sufficient. ·
Nach einem erfindungsgemäßen Verfahren behandelte Siliziumsubstratkörper mit darauf befindlichen Siliziumdioxid-Schiehten als Gate-Oxydschichten für Feldeffekttransistoren wiesen nicht mehr die Qualitätsverminderung elektrischer Eigenschaften der Gate-Oxydschicht auf, wie sie nach Behandlung mit dem bekannten Verfahren festgestellt wurde.Silicon substrate bodies treated by a method according to the invention with silicon dioxide layers on it as gate oxide layers for field effect transistors no longer the deterioration in the quality of the electrical properties of the gate oxide layer as they would after treatment with the known procedure was established.
4 Patentansprüche4 claims
VPA 9/712/1096 - -3-VPA 9/712/1096 - -3-
409842/0409842/0
Claims (4)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732316097 DE2316097A1 (en) | 1973-03-30 | 1973-03-30 | METHOD FOR AFTER-TREATMENT OF SILICON BODIES WITH AN ETCHED OXYD LAYER |
| NL7403771A NL7403771A (en) | 1973-03-30 | 1974-03-20 | |
| FR7409454A FR2223479B3 (en) | 1973-03-30 | 1974-03-20 | |
| JP3386274A JPS49129706A (en) | 1973-03-30 | 1974-03-26 | |
| IT4964374A IT1013068B (en) | 1973-03-30 | 1974-03-26 | PROCEDURE FOR THE TREATMENT OF THE TEMPERATURE OF SILICON BODIES PROVIDED WITH A LAYER OF OXIDE TREATED BY CHEMICAL ENGRAVING |
| GB1331274A GB1413936A (en) | 1973-03-30 | 1974-03-26 | Production by etching of silicon bodies having patterned silicon dioxide layers thereon |
| LU69731A LU69731A1 (en) | 1973-03-30 | 1974-03-28 | |
| BE142636A BE813049A (en) | 1973-03-30 | 1974-03-29 | COMPLEMENTARY TREATMENT PROCESS OF SILICON BODY INCLUDING AN OXIDE LAYER HAVING SUFFERED A CHEMICAL ATTACK |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732316097 DE2316097A1 (en) | 1973-03-30 | 1973-03-30 | METHOD FOR AFTER-TREATMENT OF SILICON BODIES WITH AN ETCHED OXYD LAYER |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2316097A1 true DE2316097A1 (en) | 1974-10-17 |
Family
ID=5876573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732316097 Pending DE2316097A1 (en) | 1973-03-30 | 1973-03-30 | METHOD FOR AFTER-TREATMENT OF SILICON BODIES WITH AN ETCHED OXYD LAYER |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS49129706A (en) |
| BE (1) | BE813049A (en) |
| DE (1) | DE2316097A1 (en) |
| FR (1) | FR2223479B3 (en) |
| GB (1) | GB1413936A (en) |
| IT (1) | IT1013068B (en) |
| LU (1) | LU69731A1 (en) |
| NL (1) | NL7403771A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0834910A2 (en) * | 1996-09-02 | 1998-04-08 | Japan Science and Technology Corporation | Method and apparatus for wet treating semiconductor wafers |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4749640A (en) * | 1986-09-02 | 1988-06-07 | Monsanto Company | Integrated circuit manufacturing process |
-
1973
- 1973-03-30 DE DE19732316097 patent/DE2316097A1/en active Pending
-
1974
- 1974-03-20 FR FR7409454A patent/FR2223479B3/fr not_active Expired
- 1974-03-20 NL NL7403771A patent/NL7403771A/xx unknown
- 1974-03-26 IT IT4964374A patent/IT1013068B/en active
- 1974-03-26 JP JP3386274A patent/JPS49129706A/ja active Pending
- 1974-03-26 GB GB1331274A patent/GB1413936A/en not_active Expired
- 1974-03-28 LU LU69731A patent/LU69731A1/xx unknown
- 1974-03-29 BE BE142636A patent/BE813049A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0834910A2 (en) * | 1996-09-02 | 1998-04-08 | Japan Science and Technology Corporation | Method and apparatus for wet treating semiconductor wafers |
| EP0834910A3 (en) * | 1996-09-02 | 1998-06-17 | Japan Science and Technology Corporation | Method and apparatus for wet treating semiconductor wafers |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1013068B (en) | 1977-03-30 |
| GB1413936A (en) | 1975-11-12 |
| BE813049A (en) | 1974-07-15 |
| FR2223479B3 (en) | 1977-01-07 |
| JPS49129706A (en) | 1974-12-12 |
| LU69731A1 (en) | 1974-07-17 |
| FR2223479A1 (en) | 1974-10-25 |
| NL7403771A (en) | 1974-10-02 |
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