DE2304506A1 - CIRCUIT FOR OPERATING A LUMINESCENT SEMI-CONDUCTOR COMPONENT - Google Patents
CIRCUIT FOR OPERATING A LUMINESCENT SEMI-CONDUCTOR COMPONENTInfo
- Publication number
- DE2304506A1 DE2304506A1 DE2304506A DE2304506A DE2304506A1 DE 2304506 A1 DE2304506 A1 DE 2304506A1 DE 2304506 A DE2304506 A DE 2304506A DE 2304506 A DE2304506 A DE 2304506A DE 2304506 A1 DE2304506 A1 DE 2304506A1
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- circuit according
- semiconductor component
- constant current
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
"Schaltung zum Betrieb eines Lumineszenz-Halbleiterbauelementes" Die vorliegende Erfindung bet.rifrt eine Schaltung zum Betrieb eines Lumineszenz-Halbleiterbauelementes. Bei Lumineszenz-Halbleiterbauelementen wird meistens eine gleichmäßige Lichtstärke gefordert. Da die Lumineszenz-Bauelemente jedoch je nach Kundenwunsch an verschiedene Spannungen angeschlossen erden sollen, muß ihnen ein Widerstand vorgeschaltet werden, der die Stromstärke auf einen Wert begrenzt, bei der das Element z. £. bei einem Strom von 20 mA die gewünschte Lichtstärke aufweist. "Circuit for operating a luminescence semiconductor component" The present invention relates to a circuit for operating a luminescent semiconductor component. In the case of luminescence semiconductor components, a uniform light intensity is usually used required. Since the luminescent components, however, depending on customer requirements, to different Voltages are to be connected to earth, a resistor must be connected upstream of them, which limits the current strength to a value at which the element z. £. at a Current of 20 mA has the desired light intensity.
Es wurde bereits vorgeschlagen, in das Gehäuse für ein Lumineszenz-Halbleiterbauelement ein Widerstandsnetzwerk einzubauen und das Lumineszenz-Bauelei-aent jeweils an den Widerstand anzuschließen, der der gewünschten Betriebsspannung für die Gesamtanordnung entspricht. Der Ziundc erhält so Lumineszenz-Bauelemente, die dann beispielsweise für eine Betriebsspannung von 5, 9 oder 12 Volt geeignet sind.It has already been proposed in the housing for a luminescence semiconductor component to build in a resistor network and to connect the luminescence component to the To connect resistor, the desired operating voltage for the overall arrangement is equivalent to. The Ziundc thus receives luminescent components, which then for example are suitable for an operating voltage of 5, 9 or 12 volts.
Der vorliegenden Erfindung liegt die Aufgabe zugrunde, eine Schaltung anzugeben1 durch die ein Lumineszenz-Halbleiterbauelement bei gleichbleibender Lichtstärke an unterschiedliche Betriebsspannungen angelegt werden kann.The present invention is based on the object of a circuit to specify1 through which a luminescence semiconductor component with constant light intensity can be applied to different operating voltages.
Diese Aufgabe wird erfindungsgemaß dadurch gelöst, daß in Reihe zu dem Lumineszenz-Halbleiterbauelement eine Konstantstromquelle geschaltet ist.This object is achieved according to the invention in that in series to a constant current source is connected to the luminescence semiconductor component.
Die Konstantstromquelle und das Lumineszenz-llalbleiterbauelement pferden vorzugsweise in einem gemeinsamen Gehäuse untergebracht. Während früher für jede Betriebsspannung entweder ein geeigneter Widerstand dem Leuchtelement vorgeschaltet werden mußte oder bei bereits eingebautem Widerstand jeweils eine der Betriebsspannung entsprechende Type ausgewählt werden mußte, kann nun ein Bauelement bei stark unters chisdli chen Betriebsspannungen betrieben werden, ohne daß sich die Lichtstärke des Bnuelementes spürbar verändert.The constant current source and the luminescent semiconductor component horses preferably housed in a common housing. While earlier For each operating voltage, either a suitable resistor is connected upstream of the light-emitting element had to be or with an already built-in resistor one of the operating voltage If the corresponding type had to be selected, a component can now be used if the chisdli chen operating voltages can be operated without affecting the light intensity of the Bnuelementes changed noticeably.
Als I,umineszenz-Ialble3terbauel.emente werden meist Leuchtdioden verwenden; beispielsweise handelt es sich um eine rotleuchtende GaAsP-Diode. Aus Kostengründen wird eine möglichst billige und einfache Konstantstromquelle gefordert. In einer bevorzugten Ausführungsform der erfindungsgemäßen Schaltung besteht die Konstantstromquelle aus einem Feldeffekttransistor. Besonders geeignet sind Sperrschicht-Feldeffekttransistoren. Bei diesen Sperrschicht-Feldeffekttransistoren wird der steuerbare Kanal-Strompfad in Reihe zu der Leuchtdiode gescllaltet. Der Halbleitergrundkörper und die Steuerelektrode sind dann mit einer der Hauptelektroden an dem steuerbaren Strompfad verbunden.Light-emitting diodes are usually used as the uminescence-Ialble3terbauel.emente use; for example, it is a red-glowing GaAsP diode. the end For reasons of cost, a constant current source that is as cheap and simple as possible is required. In a preferred embodiment of the circuit according to the invention, there is Constant current source from a field effect transistor. Are particularly suitable Junction field effect transistors. In these junction field effect transistors, the controllable channel current path connected in series to the light emitting diode. The semiconductor body and the control electrode are then connected to one of the main electrodes on the controllable current path.
Als Konstantstromquelle können auch andere Sclialtungen ver endet werden, wobei dann die Bauelemente dieser Schaltung vorzugsweise in einem gemeinsamen Halbleiterkörper untergebracht werden.Other connections can also be used as a constant current source are, the components of this circuit then preferably in a common Semiconductor body are housed.
Die Konstantstromquelle und das Lumineszenz-Halbleiterbauelement werden in ein herkömmliches Leuchtdiodengehäuse eingebaut. In das Gehäuse führen beispielsweise zwei Elektrodenzuleitungen. Auf dem Ende cbr einen Elektro dciizuleitung im Gehäuseinneren wird beispielsweise der die Leuchtdiode enthaltende Halbleiterkörper befestigt, während auf dem Ende der anderen Elektrodenzuleitung der die Konstandstomquelle enthaltende Halbleiterköper befestigt wird. Über einen Verbindungsdraht werden die beiden Bauelementc zueinander in Reihe geschaltet. Die beiden Elektrodenzuleitungen sind dann für den Anschluß an die beiden Pole der Versorgungsspannungsquelle vorgesehen.The constant current source and the luminescent semiconductor component are built into a conventional light-emitting diode housing. For example, lead into the housing two electrode leads. On the end there is an electric cable inside the housing for example, the semiconductor body containing the light-emitting diode is attached, while the constant current source is on the end of the other electrode lead containing semiconductor body is attached. The two components connected in series to one another. The two electrode leads are then intended for connection to the two poles of the supply voltage source.
Die Erfindung soll im weiteren noch anhand von Ausfüh@ungs beispielen näher erläutert werden.The invention is to be further illustrated by examples are explained in more detail.
In der Figur l ist eine Reihenschaltung aus eine Leuchtdiode DL und einem Sperrschicht-Feldeffekt transistor T dargestellt. Die Leuchtdiode wird in Durchlaßrichtung betrioben und beispielswoise mit dem Massepol der Versorgungsspannungsquelle verbunden. Der Feldeffekttransistor ist bei der vorgesehenen Polarität der Diode ein p-Kanal-Transistor, dessen Steuerelektrode G und Substrat K mit der Quellelektrode S kurzgeschlossen und mit dem positiven Pol der Spannungsquelle verbunden ist. Der Kurzschluß zwischen der Zug und der Quellelektrode liegt vorzugsweise bei. 20 mit.In the figure l is a series circuit of a light emitting diode DL and a junction field effect transistor T shown. The light emitting diode is in Forward direction operated and for example with the ground pole of the supply voltage source tied together. The field effect transistor is at the intended polarity of the diode a p-channel transistor, its control electrode G and substrate K with the source electrode S is short-circuited and connected to the positive pole of the voltage source. Of the Short circuit between the train and the source electrode is preferably included. 20 with.
Bei Verwendung eines n-Kanal-Feldeffekttransistors wird die Steuerelektrode und das Substrat zusammen mit der Quellelektrode an die Diode DL angeschlossen.When using an n-channel field effect transistor, the control electrode and the substrate is connected to the diode DL together with the source electrode.
Die U-I-Kennlinie der Gesamtanordnung nach Figur 1. ist in der Figur 2 dargestellt.The U-I characteristic curve of the overall arrangement according to FIG. 1 is shown in the figure 2 shown.
Zunächst steigt der Strom bei zunehmender Betriebsspannun stark an und erreicht bei ca. 8 Volt einen maximalen Wert von 20 mA. Mit weiter steigender Betriebsspannung nimmt der Strom dann wieder ab. Im Bereich zwischen 4 Volt und 25 Volt weischt der Strom von seinem maximalen Sollwert nur um höchstens 20 % ab. Diese Abweichung ist jedoch zulässig und hat auf die Lichtstärke des Leuchtelementes Figur einen kaum wahrnehmbaren Eii'fiuß. Die in der Figur j dargestellte Schaltungsanordnung kann daher bedenkenlos an Betriebsspannungen zwischen 4 und 25 Volt angeschlossen werden.First of all, the current rises sharply as the operating voltage increases and reaches a maximum value of 20 mA at approx. 8 volts. With increasing Operating voltage, the current then decreases again. In the range between 4 volts and At 25 volts, the current deviates from its maximum setpoint by a maximum of 20%. However, this deviation is permissible and has a bearing on the light intensity of the light element Figure a barely noticeable flow. The one shown in Figure j Circuit arrangement can therefore be safely connected to operating voltages between 4 and 25 volts will.
In der Figur 3 ist das Gehäuse für die Gesamtanordnung irn Schnitt dargestellt. In einen Gehäusekörper 1, der zumindest in seinem oberen Kappenteil aus einem lichtdurchlässigen Material besteht, führen zwei Elektrodenzulei zungen 2 und 3 Der Gehäusekörper besteht vorzugswe1se aus einen gieß- oder spritzbaren Kunststoff. Auf dem Stirnseitigen Ende der Elektrodenzuleitung 2 ist der die leuchtdiode DL enthaltende Halbleiterkörper befestigt. Da di Elektrodenzuleitung 2 ar den negativen Pol der Spannungsquelle angeschlossen erden soll1 muß mit der Elektrodenzuleitung die n-leitende Zone der Diode verbunden sein. Auf dem stirnseitigen Ende der Elektrodenzuleitung 3 ist der Feldeffekttransistor T befestigt. Die Quellelektrode S ist, ebenso wie der p-leiten@e Grundkörper und die Steuerelektrode, an die e Zuleitung 3 angeschlossen. Bei der genannten Zonenfolge der Diode ist der an den positiven Pol der Spannungsquelle über die Zuleitung 3 anzuschließende Halbleiterkörper n-leitend Die Steuerzone ist dann gleichfalls n-leitend, oder die Steuerelektrode besteht aus einem Schottky-Kontakt.In FIG. 3, the housing for the overall arrangement is in section shown. In a housing body 1, at least in its upper cap part consists of a translucent material, two electrodes lead tongues 2 and 3 The housing body preferably consists of a castable or injectable one Plastic. On the front end of the electrode lead 2 is the light emitting diode DL containing semiconductor body attached. Since the electrode lead 2 ar the negative The pole of the voltage source should be connected to the ground1 must be connected to the electrode lead the n-conductive zone of the diode must be connected. On the front end of the electrode lead 3 the field effect transistor T is attached. The source electrode S is, as well as the p-leiten @ e base body and the control electrode, connected to the e supply line 3. In the named zone sequence of the diode, the one at the positive pole of the voltage source Semiconductor bodies to be connected via lead 3 are n-conductive. The control zone is then likewise n-conductive, or the control electrode consists of a Schottky contact.
Als Konstantstromquelle kommen auch andere Sdialtuiigen iu Betracht. Zwei mögliche Schaltungen sind in den Figuren 4 und 5 dargestellt. Die Schaltung nach der Figur 4 besteht aus einem npn-Transistor T1 mit einem Emitterwiderstand R1.Other types of equipment can also be used as a constant current source. Two possible circuits are in the figures 4 and 5 shown. The circuit according to FIG. 4 consists of an npn transistor T1 with an emitter resistor R1.
Der Kollektor-Basisstrecke ist ein Widerstand R2 parallel geschalte-, während der Reihenschaltung aus Basis-Emitterstrecke und Widerstand R1 zwei oder mehr Dioden D2, D3 .. parallel geschaltet sind. Die Dioden D2' D3 .. werden ebenso wie die Basis-Emitterdiode des Transistors T1 in Durchiaßrichtung beansprucht.The collector-base path is a resistor R2 connected in parallel, during the series connection of base-emitter path and resistor R1 two or more diodes D2, D3 .. are connected in parallel. The diodes D2 'D3 .. are also as the base-emitter diode of the transistor T1 is claimed in the direction of passage.
Nocil besser geeignet ist die Schaltung nadi der Figur 5. Während die Schaltung nach Figur 4 für Betriebsspannungen zwischen 4 und 10 Volt vorgesehen ist, kann die Schaltung nach Fi gur 5 für Eetriebsspannungen zwischen 4 und 30 Volt eingesetzt werden. Die Schaltung besteht aus zwei gleich aufgebauten und spiegelbildlich parallel geschalteten Zweigen.Nocil is better suited to the circuit nadi the figure 5. While the circuit of Figure 4 is provided for operating voltages between 4 and 10 volts is, the circuit according to Fi gur 5 for operating voltages between 4 and 30 volts can be used. The circuit consists of two identical and mirror images branches connected in parallel.
Jeder Zweig besteht aus der Reihenschaltung eines Widerstandes R3 bzw. R3', der Emitter-Kollektor-Strecke eines Transistors T2 bzw T2' und zwei oder mehr Dioden D4, D5 bzw. D4', D51 . . . Die Basiselektrode des Transistors des einen Zweige ist mit dem Kollektor des Transistors im anderen Zweig und umgekehrt verbunden. Die Diodengruppe D4', D5' .. des einen Zweigs und der Widerstand R3 des anderen Zweigs sind an den einen Pol (+US) der Spannungsquelle angeschlossen, während der gemeinsalae Schaltungspunkt der anderen Diodengruppe D4, D5. . . und des anderen Widerstandes R3' an die Leuchtdiode DL angeschlossen ist. Alle Dioden werden in Durchlaßrichtung beansprucht. Zwischen die Basiselektrode des einen Transistors T2 und die Lcuchtdiode D wird vorzugsweise noch ein Widerstand R4 geschaltet.Each branch consists of a series connection of a resistor R3 or R3 ', the emitter-collector path of a transistor T2 or T2' and two or more diodes D4, D5 or D4 ', D51. . . The base electrode of the transistor of the one Branch is connected to the collector of the transistor in the other branch and vice versa. The diode group D4 ', D5' .. of one branch and the resistor R3 of the other Branches are connected to one pole (+ US) of the voltage source, while the common circuit point of the other diode group D4, D5. . . and the other Resistance R3 'is connected to the light emitting diode DL. All Diodes are loaded in the forward direction. Between the base electrode of one Transistor T2 and the light diode D, a resistor R4 is preferably also connected.
Alle Bauelemente der dargestellten Konstantstromschaltungen werden vorzugsweise in einem gemeinsamen iialbleiterkörper integriert.All components of the constant current circuits shown are preferably integrated in a common semiconductor body.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732304506 DE2304506B2 (en) | 1973-01-31 | 1973-01-31 | CIRCUIT FOR OPERATING A LUMINESCENT SEMICONDUCTOR COMPONENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732304506 DE2304506B2 (en) | 1973-01-31 | 1973-01-31 | CIRCUIT FOR OPERATING A LUMINESCENT SEMICONDUCTOR COMPONENT |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2304506A1 true DE2304506A1 (en) | 1974-08-01 |
| DE2304506B2 DE2304506B2 (en) | 1977-05-05 |
Family
ID=5870381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732304506 Withdrawn DE2304506B2 (en) | 1973-01-31 | 1973-01-31 | CIRCUIT FOR OPERATING A LUMINESCENT SEMICONDUCTOR COMPONENT |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2304506B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2440581A1 (en) * | 1973-08-23 | 1975-05-28 | Ebauches Sa | DEVICE FOR ELECTROLUMINISCENT DISPLAY ON A WATCH |
| DE3146328A1 (en) * | 1981-11-23 | 1983-06-01 | Siemens AG, 1000 Berlin und 8000 München | Light-emitting diode device with a protection device for limiting the current flow |
| DE3146327A1 (en) * | 1981-11-23 | 1983-06-01 | Siemens AG, 1000 Berlin und 8000 München | Light-emitting diode device with a current-limiting device and a signal converter |
| DE3642240A1 (en) * | 1986-12-10 | 1988-06-23 | Siemens Ag | Constant-current light-emitting diode (constant-current LED) |
| DE4208306A1 (en) * | 1992-03-16 | 1993-09-23 | Bernd Vogelsang | LED display system with mid to high voltage range - has group of LED devices in series with bias resistor and protecting diode, where diodes arranged in two groups |
| AT414200B (en) * | 2001-07-05 | 2006-10-15 | Tridonic Optoelectronics Gmbh | WHITE LED LIGHT SOURCE |
-
1973
- 1973-01-31 DE DE19732304506 patent/DE2304506B2/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2440581A1 (en) * | 1973-08-23 | 1975-05-28 | Ebauches Sa | DEVICE FOR ELECTROLUMINISCENT DISPLAY ON A WATCH |
| DE3146328A1 (en) * | 1981-11-23 | 1983-06-01 | Siemens AG, 1000 Berlin und 8000 München | Light-emitting diode device with a protection device for limiting the current flow |
| DE3146327A1 (en) * | 1981-11-23 | 1983-06-01 | Siemens AG, 1000 Berlin und 8000 München | Light-emitting diode device with a current-limiting device and a signal converter |
| DE3642240A1 (en) * | 1986-12-10 | 1988-06-23 | Siemens Ag | Constant-current light-emitting diode (constant-current LED) |
| DE4208306A1 (en) * | 1992-03-16 | 1993-09-23 | Bernd Vogelsang | LED display system with mid to high voltage range - has group of LED devices in series with bias resistor and protecting diode, where diodes arranged in two groups |
| AT414200B (en) * | 2001-07-05 | 2006-10-15 | Tridonic Optoelectronics Gmbh | WHITE LED LIGHT SOURCE |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2304506B2 (en) | 1977-05-05 |
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