DE2244798B2 - In itself fault-protected circuit arrangement with semiconductor components for suppressing interference pulses - Google Patents
In itself fault-protected circuit arrangement with semiconductor components for suppressing interference pulsesInfo
- Publication number
- DE2244798B2 DE2244798B2 DE19722244798 DE2244798A DE2244798B2 DE 2244798 B2 DE2244798 B2 DE 2244798B2 DE 19722244798 DE19722244798 DE 19722244798 DE 2244798 A DE2244798 A DE 2244798A DE 2244798 B2 DE2244798 B2 DE 2244798B2
- Authority
- DE
- Germany
- Prior art keywords
- winding
- capacitor
- pulse
- circuit
- core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00307—Modifications for increasing the reliability for protection in bipolar transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/007—Fail-safe circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
Description
3 43 4
len Flanke angesteuert. Flanke bedeutet hierbei der Verringerung der Schaltzeiten. Außerdem ist sie so
Zustand des Transistors 5 von gesperrt in leitend langsam, daß eventuell auf diese Stufe noch durch
oder umgekehrt. Bei steilen Flanken, also schnellem kommende Störsignale nicht ausreichen, sie durchzu-Schalten,
gibt die Auswertwicklung 4 gestörte Signale steuern. Der Kondensator 10 ist ebenso wie das Bauab,
die nachfolgende Speicherkerne fälschlicherweise 5 teil 6 als Miller-Kondensator ausgeführt,
ansteuern. Diese Fehler sind durch langsames Durch- Die Eingangsstufe mit dem Transistors wird
steuern des Transistors 5 zu vermeiden. Hierzu wird zweckmäßigerweise ebenfalls als Darlington-Stufe
der Kondensator 6 benutzt. Dieser Kondensator ist ausgeführt. Dies ergibt eine hohe Stromverstärkung,
als Miller-Kondensator bekannt. Solche Kondensato- so daß der angeschaltete Miller-Kondensator nur
ren liegen zwischen der Basis eines Transistors und io kleine Werte erreichen braucht,
dem Kollektor desselben Transistors. Bauteile dieser In F i g. 3 ist die Ausführung der Kondensatoren 6
Anordnung haben allerdings den Nachteil, daß sie und 10 dargestellt. Durch die Möglichkeit, die Zusich
so verändern können, daß ihre Wirkung gleich führungen zu den Transistoren in gedruckter Schal-Null
wird. Damit ist aber die Wirkungsweise der tung auszuführen, werden durch geschickte Anord-Schaltungsanordnung
hinfällig. 15 nung der Anschlußleitungen zwischen dem Basisan-len edge triggered. Edge means the reduction of the switching times. In addition, it is so the state of the transistor 5 from blocked to conducting slowly that possibly still through to this stage or vice versa. In the case of steep edges, that is, interfering signals that come quickly, are not sufficient to switch them through, the evaluation winding outputs 4 control interfered signals. The capacitor 10 is just like the construction, the subsequent storage cores incorrectly 5 part 6 designed as a Miller capacitor,
head for. The input stage with the transistor will control the transistor 5 to avoid these errors. For this purpose, the capacitor 6 is also expediently used as a Darlington stage. This capacitor is implemented. This gives a high current gain known as a Miller capacitor. Such capacitors so that the connected Miller capacitor only needs to be between the base of a transistor and reach small values,
the collector of the same transistor. Components of this In F i g. 3 is the design of the capacitors 6 arrangement, however, have the disadvantage that they and 10 are shown. By being able to change the Zusich in such a way that their effect is the same as guides to the transistors in printed scarf zero. However, this means that the operation of the device is to be carried out, which are rendered superfluous by clever arrangement circuitry. 15 connection of the connecting cables between the base
Nach der erfindungsgemäßen Schaltungsanord- schluß B bzw. B' und dem Kollektoranschluß C bzw.After the circuit arrangement according to the invention B or B ' and the collector connection C or
nung wird der Miller-Kondensator 6 so geschaltet, C" der Transistoren 5 bzw. 7 Kapazitäten erzielt.voltage, the Miller capacitor 6 is switched so that C ″ of the transistors 5 and 7, respectively, capacitances are achieved.
daß seine Beläge von wichtigen Strömen durchflos- Diese Kapazitäten sind bauartbedingt, erreichen aberimportant currents flow through its coverings. These capacities are due to the design, but achieve
sen werden. Der Kollektorstrom des Transistors 5 die geforderten Größen.be sen. The collector current of the transistor 5 the required sizes.
führt über den einen Belag und der Basisstrom über 20 Bei Verwendung eines Darlington-Verstärkers ist
den anderen Belag. Bei einem Kurzschluß des Kon- in Verbindung mit einem Widerstand eine sehr gedensatorsö
wird die Basis-Kollektor-Strecke kurzge- ringe Kapazität zur wirksamen Störunterdrückung
schlossen und der Transistor 5 wirkt als Diode. Da- ausreichend. Außerdem gestattet der Darlingtondurch
werden keine Impulse mehr an den Schaltring- Verstärker die Verwendung eines verhältnismäßig
kernl abgegeben. Wenn eine Verbindung des Kon- 25 hohen Basis-Vorwiderstands. Deshalb kann der Kondensators
6 abreißt, wird der Kollektor- oder Basis- densatorö bzw. 10 vorteilhaft in Form einer gestrom
unterbrochen und auch dieser führt zu einem druckten Schaltung ausgeführt werden.
Ausfall der Schaltungsanordnung. Hinter dem Ausgang A der erfindungsgemäßenleads over one layer and the base current over 20 When using a Darlington amplifier is the other layer. In the event of a short circuit of the capacitor in connection with a resistor, a very low capacitance, the base-collector path is closed for effective interference suppression and the transistor 5 acts as a diode. Sufficient for that. In addition, the Darlington means that no more pulses are delivered to the switching ring amplifier to use a relatively kernl. When a connection of the Kon-25 high base series resistor. The capacitor 6 can therefore be torn off if the collector or base capacitor or 10 is advantageously interrupted in the form of a current and this also leads to a printed circuit being executed.
Circuit breakdown. Behind the output A of the invention
Zur weiteren Unterdrückung der Störimpulse, die Schaltungsanordnung können weitere Stufen andurch das schnelle Durchschalten der Transistoren 30 geordnet sein, um zusätzliche Verzögerungen zu erentstehen, ist erfindungsgemäß hinter den Schaltring- zielen. Diese Stufen sind dann ebenfalls so geschalkern 1 eine über /?C-Glieder angesteuerte Darling- tet, daß die Verzögerung jeweils am Eingang und am ton-Stufe angeordnet. Diese Stufe dient ebenfalls zur Ausgang erfolgt.To further suppress the interference pulses, the circuit arrangement can andurch further stages the fast through-switching of the transistors 30 must be ordered in order to produce additional delays, is behind the switching ring targets according to the invention. These steps are then also so peeled 1 a Darling controlled via /? C elements that the delay at the input and at the arranged tone level. This stage is also used to make the exit.
Hierzu 1 Blatt Zeichnungen1 sheet of drawings
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722244798 DE2244798B2 (en) | 1972-09-13 | 1972-09-13 | In itself fault-protected circuit arrangement with semiconductor components for suppressing interference pulses |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722244798 DE2244798B2 (en) | 1972-09-13 | 1972-09-13 | In itself fault-protected circuit arrangement with semiconductor components for suppressing interference pulses |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2244798A1 DE2244798A1 (en) | 1974-03-28 |
DE2244798B2 true DE2244798B2 (en) | 1975-04-03 |
Family
ID=5856160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19722244798 Ceased DE2244798B2 (en) | 1972-09-13 | 1972-09-13 | In itself fault-protected circuit arrangement with semiconductor components for suppressing interference pulses |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE2244798B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3037905C2 (en) * | 1980-10-04 | 1982-09-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Fail-safe logical combination circuit |
-
1972
- 1972-09-13 DE DE19722244798 patent/DE2244798B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
DE2244798A1 (en) | 1974-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8235 | Patent refused |