DE2218928A1 - Semiconductor arrangement with electroluminescent diode - Google Patents

Description

GÜNTHER M. DAVID fphn 5787

n .. * _ir i, ._ Va / RJ

Applicant: N.V. PMiLIFS 'GLGtILAMPENFABRIEKEAI Act ”, PEN-5787

Registration from. ^

"Electroluminescent diode semiconductor device".

The invention relates to a semiconductor device with at least one electroluminescent transition, which is converted into a flat Substrate diffused zone is formed, the · surface is provided with contact members of at least one of which has the shape of a ring extending around the circumference of said zone.

It is known that the light wave emitted by an electroluminescent diode is in time an excitation current with a certain frequency

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to modulate. As is well known, this application was an electroluminescent diode already for various purposes, e.g. for remote measurement, used.

It is also known that the phase of the modulated wave generated by the alternating excitation current in the light emitted by an electroluminescent junction is introduced to the various Points of the surface of this transition is different. A systematic review of the emitted Light shows that the phase difference between the peripheral zone and the central zone of the mentioned Transition maximum and the phase change between these two furthest apart Zones is particularly regular. The edge zone in the vicinity of the electrical contacts turns out to be however, as the most failure-prone part.

Although this phenomenon cannot be explained at all, it seems logical to assume that the phase shift with the different values of the RC time constants between each contact and is connected to each emitting point of the transition,

The lack of homogeneity of the phase of the modulation wave superimposed on the light wave in the case of high frequency excitation used diodes for the

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electroluminescent diodes of the various which is characteristic of current types is a major disadvantage in various applications.

In the aforementioned remote measurement application, the electroluminescent diode in the Placed near the focal point of an optical system to generate a beam of light which in Direction is emitted on a target. The light beam reflected from the target to the transmitter is focused on a photodiode, wherein the distance between the structure of transmitter and receiver and the target is thereby determined that the phase shift between the transmitter side and the receiver side is measured.

The lack of homogeneity of the phase of the high frequency modulation wave in that of the diode emitted light can be reflected by an error of at least 0.20 m at a measured distance in of the order of magnitude of 1000 m. The size this error varies with the area of the image produced by the reflected light beam the source, in which area the receiving photodiode is arranged.

It has been proposed to eliminate this disadvantage of the diode, which causes the measurement error to decrease that on the electroluminescent

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Transition a more or less intricate optical system is attached, which acts in such a way that a kind of mixture of the light rays delivered by each elementary surface of the transition mentioned is obtained. The light received by and large, however complex it may be in terms of its phase _? offers at least the advantage that it is uniform and that errors are considerably reduced when remote measurements are carried out. The major disadvantage of this arrangement is that it is difficult to obtain a suitable optical system and to adjust this optical system with the required precision with respect to the diode.

The present invention aims to provide an electroluminescent diode whose Structure is suitable for generating a modulated light wave whose modulation phase between; two Points of the transition generating this wave is the same with a fairly high degree of accuracy.

The invention is based on the knowledge that the edge zone of an electroluminescent Transition, which is located in the vicinity of the electrical contacts, forms part of the transition, in which the speed of change of the modulation phase is greatest, whereby the mentioned Transition containing electroluminescent

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Arrangement is to be constructed in such a way that this "edge effect" is eliminated.

According to the invention is a semiconductor device with at least one electroluminescent Transition formed by a zone diffused into a flat substrate, its surface is provided with contact members, of which at least one has the shape of a on the circumference of the ' has mentioned island extending ring, characterized in that to the mentioned ring-shaped Contact member includes a layer that is responsible for the light radiation emitted by the mentioned transition x is permeable and "within and extends along said ring.

The mentioned ring-shaped contact member advantageously settles in a conductive, impermeable one Layer away that extends from the edge to the middle part extends over the surface of said zone and lies on a bed of dielectric material, which at least partially covers the surface mentioned.

It is also advantageous if the conductive impermeable layer is at least 5 μm and preferably more than 20/10 to extend from the contact member.

Tests have shown that just by

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covering the edge zone of the transition the maximum The size of the phase difference can be reduced in a ratio of 3 ϊ 1. This educates an essential advantage of the arrangement according to the invention.

By this covering a correlative decrease of light emitted from the transition light current is apparently achieved ₀ It should however be noted that, for a variety of applications of the electroluminescent arrangements of the value of the luminance or the intensity of the light radiation per emitting surface unit is more important than the value of the luminous flux. This applies, for example, to the electroluminescent diodes used in telemetry.

In fact, in the case of telemetry, the one that reaches the optical system on the receiving side is Luminous flux F proportional to the luminance L of the source and the geometric expansion G, which Expansion by the formula:

0.-5-

is shown, in which: S ₁ and S represent the surface of the optical systems on the transmitter and the receiving side, while d the light separating these two optical systems from each other

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railway is.

For a given value of G, the luminous flux F is only of the luminance L of the source addicted. This luminance L is now the relation-

ρ
nis - the whole of the source - in the present

e
proportional to the case of the light power P emitted by the electroluminescent diode and the total surface S of the emitting junction of this diode, where for a selected power P the

Ratio ■ = - is constant.

A second advantage of the arrangement after the

Invention resides in ease of implementation. The process of making an electroluminescent diode, from which parts of the surface of the Transition are covered with a conductive layer, differs little from the process for the production of a conventional electroluminescent diode. It is only required that after the Diffusion process to generate the emitting Transition, depending on the circumstances, the surface of this transition completely or partially with a bed

a dielectric material is coated, the to

° Presence is necessary to ensure that the conductive cover

^. layer to isolate against the transition mentioned.

^ * According to a preferred embodiment of a

^ ⁰ electroluminescent arrangement according to the invention, the electrical contact is in the form of a circumferential ring on the surface of the diffused

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Zone supplemented with at least one contact strip, which extends from dom mentioned ring to the central part of the mentioned zone.

This contact strip, the one with the circumferential ring is connected, is therefore over part of its length in the impermeable part partially covering the zone Layer embedded.

By such a measure, the size of the phase shift between the Edge and middle parts of the diode emitted light radiation is further reduced. If accepted that the modulation of the light at the periphery has a "minimal" phase and that of the light in the middle has a "maximum" phase, the zero point being practically the same distance from These two areas are located, it follows from experience that by placing the external contact ring with a strip extending to the central part of the zone, the "maximum" is considerably increased and thus the size of the phase shift area is reduced.

In this embodiment, according to the invention, the best results are obtained with a diode achieved with a circular transition, the outside four contact strips form the circumferential contact ring

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TC holds, which extend radially, mutually shifted by -τ- , and are insulated from one another at their ends remote from the mentioned ring, a conductive impermeable layer always covering a surface of the island, which is determined by tests according to the desired quality level.

With an electroluminescent one adapted in this way Diode it has been found possible to reduce the size of the modulation phase difference by a factor of 10 to 15 and the error resulting from a remote measurement by the reduce the same amount.

Whichever design may be used, the size of the phase shift is the smaller, the narrower the uncovered emitting surface of the zone. For telemetry purposes there But there is a minimum of available surface below which you cannot work, then there is would quickly become difficult and dangerous, the optical system of the range finder on the receiving side in the now too small generated by the transmitter-side optical system of this rangefinder To arrange the imaging surface.

The principle of the invention in the manufacture

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Position of an electroluminescent diode, from which part of the emitting surface is covered, to the size of the phase shift between the high frequency modulation waves of the elementary, the Reducing partial light beams supplied by the diode and forming the total beam can also be used with Use electroluminescent arrangements with a large emitting surface, the one can generate large luminous flux.

According to an advantageous measure of the invention, which is used in the diodes with a large emission surface, contains the network of Contact members other than the circumferential ring and at least one extending from the mentioned ring to the central part the diffused zone extending contact strips at least one intermediate ring located on the central part of the mentioned zone between the central one Part and the edge part of this zone is located.

Preferably, the mentioned intermediate ring is homothetic to the circumferential ring with respect to the axial point of the surface of the zone, resulting in a zone with a circular surface to be concentric Contact rings leads.

Such a geometry of the contact members, which is supplemented with a conductive impermeable layer, which is on a bed of dielectric 209844/0883

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tric material from the circumferential contact ring to the Intermediate ring (or, if several of these rings are attached to the surface of the zone, to the closest one Intermediate ring), it allows the maximum phase difference of the modulation of the an electroluminescent diode with a large emitting surface of emitted light in one Reduce the ratio up to 1: 6. This result is partly due to the presence the conductive impermeable layer covering the emitting edge zone, which, as above

has been described, is very prone to failure, and on the other hand achieved by the presence of the intermediate rings, which is a "delay in the increase" of the Introduce phase shift.

The error that arises in a remote measurement, which with the help of an electrolumxneszierende Diode with a large surface is carried out (which emitting surface the uncovered Part of the transition corresponds to), which diode is constructed in the manner just described

so also 6 times smaller than when using a diode with exactly the same surface that on usual way.

For the production of a semiconductor device with an electroluminescent junction according to 209844/0883

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In accordance with the invention, it is advantageous to first have a layer of a dielectric material on the surface of the substrate or generally on the aforesaid Substrate deposited epitaxial layer, after which then the dielectric Layer is photoetched to obtain a window through which a material is diffused, which ensures the formation of a transition. This is followed by a second layer made of a dielectric material deposited at least the surface of the previously must cover diffused zone; in practice it is easier to put down a second layer, both the diffused zone and the remaining part of the first dielectric layer covered. In the second dielectric layer, which is only present above the diffused zone and in this area of arrangement those referred to above as "bed of dielectric material" Forms designated layer, the contact windows are attached by a photo-etching process. then a thin layer of conductive material is deposited, followed by selective removal of this thin layer the contact members and the conductive impermeable, the edge zone of the Layer covering the surface of the diffused zone

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To be defined.

The parts of the second layer of dielectric material that are not connected to the contact members or cover parts of the zone covered with the conductive impermeable layer either removed or retained, depending on the purposes for which the electroluminescent device is used, is used. In the second case, it is understood that the dielectric material used for the radiation emitted by the transition must be transparent.

With this structure it is at all possible to use a suitable optical system (in the form of a Hemisphere or a planoconvex meniscus) if this proves necessary for certain purposes proves.

The type of crystal or the original epitaxial layer, the type of material used for diffusion material used, the type of material or materials of the dielectric layers and the type the material of the thin conductive layer of the contact members and the conductive impermeable layer are by no means essential to the invention.

The invention can be used, for example, in electroluminescent arrangements in the manufacture of semiconductor crystals with direct 209844/0803

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Direct band-gap material, such as gallium arsenide, gallium antimonide, indium phosphide, etc., is assumed. The crystal advantageously has the n-conductivity type, while the diffusion impurity preferably consists of zinc; the the material forming the dielectric layers is silicon nitride or silicon dioxide; the leading The material of the contact members and the conductive impermeable layer is aluminum

The invention further relates to a telemetry device having a semiconductor device contains according to the invention.

Some embodiments of the invention are shown in the drawing and are described below described in more detail. Show it:

Fig. 1 is a plan view of a semiconductor diode with an electroluminescent junction according to one embodiment of the invention,

FIG. 2 shows a section along the line I - I of FIG. 1 through the same diode,

FIGS. 3a to 3g show the most important manufacturing stages the electroluminescent diode according to FIG. 1,

Fig. H is a plan view of a semiconductor diode with an electroluminescent junction according to another embodiment of the invention,

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5 shows a section along the line II-II in FIG. 4 through the diode according to FIG. K.

The structure, the electroluminescent The diode according to FIG. 1 corresponds on the whole, within the scope of the invention, to diodes with a lower emitting power Surface where the maximum phase difference between the modulations of each elementary uncovered point of the transition emitted elementary light rays as possible is low.

This diode according to Fig. 1 is in the usual way on a crystalline support or an epitaxial Layer 10 made.

The emitting transition is formed at the point of the diffused zone 11, the outline of which which is circular in this case, is indicated in Fig. 1 with the long dashed line 11a.

The surface of the substrate 10 and an essential Part of the area of zone 11 are with a Covered bed of dielectric permeable material 12 (see Fig. 2).

Electrical contacts are made on the zone 11 attached by the dielectric bed 12.

In the embodiment according to FIG. 1, these contacts consist on the one hand of a closed 209844/0883

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Ring 13 'which is attached to the periphery of the zone 11 slightly below the boundary line 11a of this zone, and on the other hand of four contact strips 1 ^, 15' 16 and 17 'which are arranged at mutual angular distances which are practically equal to -τ- , which strips extend from the ring 13 to the central zone of said zone 11.

A conductive impermeable layer 1-8 that appears in the figures through snow-like Areas shown covers a substantial part of the zone 11 and extends well over the Boundary line 11a of the mentioned zone away. The conductive layer 18 is from the dielectric bed 12 isolated from the zone 11, except at the locations of the contacts 13 (the layer 18 is over the whole length of contact 13 connected to this contact) and 1 ^, 15,16,17, parts of which Ha, 15a, 16a and 17a from the mentioned layer above the the middle part of the zone 11 protrude.

The conductive layer 18 forms a shield against the light emanating from the underneath it Layer lying parts of the transition and in particular emitted from the edge parts of this transition will.

The transition can therefore only emit to a substantial extent through the window 1 °. There were

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found that when this transition of buckets H frequenzstram is excited, which is the carrier wave superimposed high frequency modulation wave the whole of the window 19 corresponding has practically the same phase.

The conductive surfaces SQ and 21, which extend from the periphery of the conductive layer 18 he.r er ^. stretch, are attached to the attachment of the Wires of electrical contacts through! Färme ^ To facilitate pressure-joining.

A structure of the in Fig ». I kind shown; can be obtained in the following way (see Figures 3a to 3g)

On the effective surface of a substrate 10 (crystal or epitaxial solids as mentioned above) a first bed 13a (from Q, 1 ^{: to} 0.5 μm) of a dielectric material is deposited (see. Fig. 3a).

The substrate consists a.B, of arsenide, while the dielectric material dioxide or silicon nitride. Preferably will Silicon nitride is used because it is related to the Masking during diffusion has the most favorable properties.

The silicon nitride bed 12a is applied to the substrate 10 by known techniques

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"For example, the formed substrate is exposed to a mixture of vapors of ammonia and silane (Siik) diluted in hydrogen at a temperature between 700 and 900 ⁰ C.

Then a window 30 is made in the bed 12a » using a photosensitive lacquer as masking and the unmasked silicon nitride using a warm dilute orthophosphoric acid solution Will get removed. (See Figure 3b).

The next step (see FIG. 3c) is the diffusion of an impurity by one of the usual diffusion processes; In this stage, zone 11 and an electrolu ^ ainescent pn junction are formed. It is known that the formation of an emissive junction generally takes place by diffusion of a p-type impurity into an n-type crystal. In a _z% B. li ^ XQ conductive substrate is diffused »^ p- type region 11 by diffusion of zinc advantageously formed.

After the formation of the zone, a second one becomes Silicon nitride bed 12b: deposited (see Fig. 3d) «This bed 12h (with a thickness of 0.1 up to 0.5 / um », the same as the bed 12a) covers only and directly the surface of the zone 11, while there is an increase in the thickness of the dielectric

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- ' : - ■ ^: '. ':' - · ".."? · .- · = · -. ". '■ - r' .-- l · .: ..- ■ - - :. · -. "

■ Openings are then made in the bed 12b so that contact surfaces are defined on the zone. Same as in Fig.!. Correspond these openings, which are shown in the section according to FIG. 3 ©, those of the contact member 13 forming peripheral ring.

A conductive coating 18 is then applied to the formation of the effective surface of the structure, e.g. deposited by vapor deposition in a vacuum ^ (see Fig. 3f). This coating 18 with a thickness of 1 to 3 / um mostly consists of aluminum ·.

Finally, the window is exposed by a photo-etching treatment of the coating 18, through which the light is emitted (see Fig. 3g)

In a known way and although this stage of manufacture not illustrated in an additional figure, is taken from the rear surface of the Carrier crystal, that of the surface on which the transition located opposite that removes the part contaminated with zinc during diffusion, after which a conductive layer is deposited on the exposed surface (e.g. made of tin or gold germanium) to get the second electrical contact clip of the assembly.

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In one embodiment, one according to the invention electroluminescent diode with a very small phase difference of the modulation of the emitted Light, which diode is particularly good at precise remote measurements (with an accuracy in the On the order of centimeters at a distance of 1000 m) is applicable, the outside diameter is of zone 11 I65 to I85 / um and that of the window 19 50 to 70 / um, while the contact 13 forming Circumferential ring has a mean diameter of 150 μm and has a size of 15 to 20 µm and the Contact strips 14,15j 16 and 17 a size of 7 up to 13 / µm; the mentioned strips 14,15, 16 and 17 extend over 10 to 15 / um on the Surface of the window 19.

These figures are, for example, based on tests that the applicant has carried out, given. Sio do not limit the scope of the invention at all.

The structure of the electroluminescent diode according to FIG. K (which diode is shown in section in FIG. 5) is an embodiment of the invention with the aid of which an arrangement with a relatively large emitting surface can be obtained in comparison to that of the arrangement according to FIG .

The crystal carrier or the epitaxial

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Layer is denoted by 40. The diffused Zone 41 in which the emitting junction is located (see Fig. 5)> is in Fig. 4 with the likewise circular and with a long dashed line Line indicated outline 4-1 denotes a.

The bed of dielectric permeable material covering the surface of zone 41 and the remaining part of the surface of the substrate

40 covered, is denoted by 42 (see Fig. 5)

Since it is assumed that the transition is a covers a relatively large surface area, a number of contact zones will be on the surface of the zone

41 formed. These contact zones contain a circumferential ring 43 »two intermediate rings 44 and 45, which to the ring 43 are concentric, and contact strips 46, 47 »48 and 49 · The latter are regular on the surface at mutual angular distances almost the same - arranged and their size increases from the circumference to the center of the zone 4i. The rings 44 and 45 cross in their circular course strips 46, 47, 48 and 49.

The structure is symmetrical and divides the emitting surface into sectors.

To reduce the phase spread and according to the inventive measures, is the edge zone of zone 41 with a conductive impermeable

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casual layer 50 covered in the figures

is represented by surfaces that look like snow. Dioso conductive layer 50 associated with the various Contacts is connected, (this layer and these contacts are actually made during the same process formed) is against the zone 41 and the substrate 49, except at the locations of the contacts, through isolates dielectric bed 42. The one mentioned

The coating layer extends over the boundary lines of the zone 41 above the substrate 40; she is extended at 51 »52, 53 and 54 so that zones are formed, the expansion of which is sufficient to solder the outer connecting wires.

It is evident that the arrangements according to FIGS. 1 and 4 are based on the same findings establish. The emitting surface of the diode which is larger than that of FIG. 1 is shown in FIG

4 only has the consequence that the number and the surface area of the contacts are increased, thus the negative increase in the phase of modulation

of the emitted light from the periphery to the center of the transition is used, which increase at the level of each of the mentioned contacts.

For example, and to compare the arrangements according to FIGS. 1 and 3, it is specified more precisely: that is, if the outer diameter of zone 41 is between

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and 490 / uim, the inside diameter of the. conductive impermeable coating layer 50, which limits the remaining effective part of the transition, is preferably between 310 and 350 μm, while the peripheral ring forming the contact 43 and the intermediate rings 44 and 45 »have an average diameter, which are equal to 420, 200 or 90 / µm, and Sizes between 4o and 50 / um for the ring 43 and between 15 and 25 µm for rings 44 and 45. The size of the contact strips 46, 47, 48 and 49 is 7 to 35 µm and the ends of the mentioned Stripes are at a distance of 20 to 30 µm from the axis, the structure.

Each of the embodiments according to the figures 1 and 4 of the electroluminescent arrangement according to the invention corresponds to a structure with circular geometry. But it does not follow from this that one is bound to such a geometry.

The number, shape and manner of distribution of the rings and contact strips lie not fixed either, but are determined by experiment on a case-by-case basis. It is not at all required that the contact rings are self-contained are.

Finally, it should be noted that the existing

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being of parts of the dielectric bed 12 (Fig. 2) or 42 (Fig. 5) in place of the parts

of zone 1t (Fig. 2) or 4t (Fig. 5), which are not vaned by the conductive impermeable layer is not indispensable, so the mentioned Parts safely through a standard photo-etching process can be removed.

Claims (1)

FPHN 5787 Patent claims : 1.j semiconductor arrangement with at least one electroluminescent transition through a formed into a flat substrate diffused zone is whose surface is provided with contact members, at least one of which has the shape of a having on the circumference of said zone extending ring, characterized in that to the mentioned contact member in the form of a ring a layer of one for the transition mentioned above opaque emitted light radiation Material that extends within and along said ring. 2. Semiconductor arrangement according to claim 1, characterized in that the to the contact member in the form a layer of impermeable material belonging to a ring; a layer of a conductive material is different from. the edge to the middle part of the Surface of the zone and lies on a bed of a dielectric material which at least partially covers the surface mentioned. 3. Semiconductor arrangement according to claim 2, characterized in that said impermeable conductive layer extends over at least 5 μm to the ■ - 'i t. t . (- 1! -. · ι 1 extends the surface of the zone. Semicon f-rr.riordiiung Jicich. into the claim ? i> $ ΆΑ ι ,? * 0 β 8 "^; ; BAD ORIGINAL FPHN 5787 1 to 3 »characterized in that, in addition to the contact member formed by the peripheral ring of the Zone contains at least one contact strip connected to the mentioned ring, which extends to the Central part of the mentioned zone extends. 5. Semiconductor arrangement according to one of claims 1 to 3 »characterized in that it is in addition to the formed by the peripheral ring contact member of the zone contains a number of contact strips which are connected to the mentioned ring and converge to the central part of the mentioned zone without that they are put together. 6. A semiconductor device according to claim 5> characterized in that the diffused zone is circular, while the contact member lying on the periphery is also circular and / to the aforementioned zone is attached in egg nem distance of at least 5 behind the outer edge, wherein four contact strips in a mutual angular distance of —χ. 7. Semiconductor arrangement according to claim 5 »thereby characterized in that the mentioned converging contact strips with each other over their length connected by means of at least one intermediate ring sin.l. 8. Ha 1! ->1;-> i. t ran or In ing rr-iU claim (>, thereby BATH ORIGINAL FPHN 5787 marked that the contact strips are above at least 2O / do atis outside the conductive impermeable Layer extend, making that on the perimeter lying contact member is extended in the direction of the central part of the zone. 9 «semiconductor arrangement according to claim 7» thereby characterized in that the intermediate ring extends on the surface of the zone along one of the surfaces of the peripheral ring parallel path extends. tO. Semiconductor arrangement according to one of claims t to 9, characterized gekennzeiehnet that _f. surface parts of the zone not covered with the contact members and the impermeable layer are left exposed. 11. Semiconductor arrangement according to one of the claims 2 to 9 »characterized in that the mentioned Bed of dielectric material all over the top, area of the zone, with the exception of the surface parts, on which the contact members are located. 12. Semiconductor arrangement according to one of the claims 1 to 11, characterized in that the uncovered Surface of the diffused zone with a convex optical system is covered. 13. Semiconductor arrangement according to one of the claims 1 to 12, characterized in that the material 209844/08 (1 * FPHN 5787 of the substrate of the diffused zone is gallium arsenide.
1 ^. Semiconductor arrangement according to one of the claims 1 to 13, characterized in that the contact members consist of aluminum. 15 · Semiconductor arrangement according to one of the claims 2 to 14, characterized in that the dielectric Material is silicon dioxide. 16, semiconductor arrangement according to one of claims 2 to 14, characterized in that the dielectric Material is silicon nitride. 17. A method for manufacturing a semiconductor device according to claim 2, characterized in that on the effective surface of a crystalline Semiconductor substrate of a first conductivity type a first bed of dielectric material is deposited, in which an opening is made, with an impurity of one second conductivity type is diffused through this opening into the substrate mentioned, so that a electroluminescent junction is formed while a second bed of dielectric material is deposited at least on the surface delimited by the mentioned first bed and window be placed in the mentioned second bed above the diffused part, so that contact zones 209844/0883 FPHN 5787 can be obtained, with a conductive coating layer is deposited on the mentioned second dielectric bed, and finally in the contact windows the mentioned conductive coating layer is subjected to a photoetching treatment so that the selected ones above the surface of the diffused part Areas of transition are made free, which should emit the light. 18. Telemetry device employing a semiconductor device according to any one of claims 1 to 1 $. 209844/0883 Blank page