DE2216424A1 - - Google Patents

Info

Publication number
DE2216424A1
DE2216424A1 DE19722216424 DE2216424A DE2216424A1 DE 2216424 A1 DE2216424 A1 DE 2216424A1 DE 19722216424 DE19722216424 DE 19722216424 DE 2216424 A DE2216424 A DE 2216424A DE 2216424 A1 DE2216424 A1 DE 2216424A1
Authority
DE
Grant status
Application
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722216424
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822Beam leads
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
DE19722216424 1971-04-08 1972-04-05 Pending DE2216424A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7112524A FR2132553B1 (en) 1971-04-08 1971-04-08
FR7137300A FR2156420B2 (en) 1971-04-08 1971-10-18

Publications (1)

Publication Number Publication Date
DE2216424A1 true true DE2216424A1 (en) 1972-10-12

Family

ID=26216317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722216424 Pending DE2216424A1 (en) 1971-04-08 1972-04-05

Country Status (2)

Country Link
DE (1) DE2216424A1 (en)
FR (1) FR2156420B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152718A (en) * 1976-05-11 1979-05-01 Thomson-Csf Semiconductor structure for millimeter waves
FR2422257A1 (en) * 1977-11-28 1979-11-02 Silicium Semiconducteur Ssc Process for ridging and furrow glassiviation and new structure
US4754316A (en) * 1982-06-03 1988-06-28 Texas Instruments Incorporated Solid state interconnection system for three dimensional integrated circuit structures
EP0342094A1 (en) * 1988-05-10 1989-11-15 Thomson-Csf Semiconducteurs Specifiques Planar type high frequency integrated circuit comprising at least one Mesa component, and his manufacturing process

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439737B2 (en) * 1964-10-31 1970-05-06

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152718A (en) * 1976-05-11 1979-05-01 Thomson-Csf Semiconductor structure for millimeter waves
FR2422257A1 (en) * 1977-11-28 1979-11-02 Silicium Semiconducteur Ssc Process for ridging and furrow glassiviation and new structure
US4754316A (en) * 1982-06-03 1988-06-28 Texas Instruments Incorporated Solid state interconnection system for three dimensional integrated circuit structures
EP0342094A1 (en) * 1988-05-10 1989-11-15 Thomson-Csf Semiconducteurs Specifiques Planar type high frequency integrated circuit comprising at least one Mesa component, and his manufacturing process
FR2631488A1 (en) * 1988-05-10 1989-11-17 Thomson Hybrides Microondes MICROWAVE integrated circuit of planar type, comprising at least one mesa component, and process for its manufacturing
US4982269A (en) * 1988-05-10 1991-01-01 Thomson Hybrides Et Microondes Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof

Also Published As

Publication number Publication date Type
FR2156420B2 (en) 1976-04-30 grant
FR2156420A2 (en) 1973-06-01 application

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