DE2149688A1 - Electroluminescent device - Google Patents

Description

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THE SECRETARY OP STATE POR DEFENSE IN HER BRITANNIC MAJESTY'S GOVERNMENT OP THE UNITED KINGDOM OP GREAT BRITAIN AND NORTHERN IRELAND, London (Great Britain)

Electroluminescent device

The invention relates to an electroluminescent device in which a first number of conductors with a second Number of conductors forms a number of intersection points, at each intersection point an area of electroluminescent and material responsive to a control voltage is associated therewith and in which means for applying the operating voltage the area made of electroluminescent material are provided.

There have recently been many attempts to create solid-state imaging systems which are alternatives to cathode ray tube imaging systems. Solid-state imaging systems have the advantage that they operate with low voltages. They are cheap to manufacture and very reliable. A special solid-state image system is the electroluminescent image system, in which the light is emitted from phosphor zones , such as zinc sulfide, by applying voltages to the phosphor zones with the aid of conductor arrangements which form control circuits.

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When designing an electroluminescent imaging system one of the biggest problems relates to the number of control circuits. If the system only has a small number of light-emitting phosphor zones, then is it is possible to provide a pair of conductors for each individual phosphor zone. If there are a large number of zones, a but such an arrangement too difficult. This problem could be solved by having a single connection for everyone Zones in a row and a similar connection for all zones in a column in the manner of a Cartesian mesh is used. As a result, in an image field with η χ η light-emitting zones or elements, only 2n control switch-

p
circles are required instead of η. However, this control device in the form of a grating has serious problems in terms of brightness and contrast. If η χ η elements are repeatedly scanned, then the voltage is only for a period of the order of magnitude of t / n on each individual element, where t means the entire scanning time. The mean intensity per sampling time unit for emitting the light is therefore severely restricted for each element.

It is possible to use phosphors which are in provide a high level of brightness for the period under consideration. However, this does not provide an adequate solution to the problems. This is because the phosphors have a large electrical capacity and are able to absorb stray charges. Here but the brightness of the phosphors is generally a smooth puncture from the applied voltage, it is possible that elements which should indicate the OFF state in their brightness have approximately half of the ON state. Therefore it is necessary to connect a non-linear control device in series with each element in order to thereby reduce the voltage applied to each element,

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when it should be in the OFF state. The control device should have a small resistance when the element is in the ON state and a large resistance when the element is in the Is OFF state. In other words, the resistance of the controller is a steep puncture from that for the Element provided brightness. The resistance added by the control device can be added to this by a memory effect help to keep the voltage applied to the elements at a high value for quite a long time.

A solid-state switch is an example of a controller. These switches are currently made of glass semiconductor material. There are two main types of switches, viz the threshold (s) value switch and the memory switch. Glass semiconductor switch are threshold switches and have a when a voltage is applied below a first threshold Resistance. Above this threshold, the material switches to the conductive state. If the switch with a typical Load resistor is connected, then the voltage tapped across it drops because the impedance of the switch is smaller becomes like that of the load resistance. The conductive state remains when the current is reduced. But under After a certain threshold of the current value, the material returns to the blocking state. The glass semiconductor switch the second major type, the memory switch, works similarly. But it has the important difference that it remains in the conductive state when the current strength approaches zero. He can by a large current impulse be switched back to the blocking state.

Electroluminescent imaging systems, which are made up of light-emitting Solid-state switches connected to elements have already been proposed. These works

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but only satisfactory in AC operation. The used Threshold switches made of solid glass material are bistable in AC operation. This means that they are during one period switch the light emitting elements twice. An electroluminescent that works with direct current However, an imaging system with a plague switch poses difficulties. The use of the recently developed Threshold switch is prevented that the holding current is a few mA and below, while the electroluminescent Elements at some / UA work. (Recently over Threshold switches reported that have a holding current of about 100 / UA). The use of a number of memory switches is also not possible because the switches that are in the ON state at the end of each image scan are turned off Need to become. However, this can only be done by passing a large current pulse. But since every switch is in Series with an electroluminescent element, no large currents can be sent through.

According to the present invention, an electroluminescent device is provided in which a first number of conductors with a second number of conductors form a number of pairs of intersections, each pair of intersections being the combination of a zone of electroluminescent and DC-responsive material with an electrically connected in series and a solid-state memory switch having a conductive and blocking state is assigned, in which the series circuit is arranged between the first conductor and the second conductor and an electrical connection is provided from this series circuit to a third conductor, and in which means for applying an electrical voltage, on which the zone of electroluminescent material between the first conductor and the second conductor

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responds, and means for applying electrical pulses between the first conductor and the third conductor which are large are enough to switch the plague switch between its conducting and blocking state, are arranged.

In a further development of the invention, the links of the first number of conductors are parallel to one another.

In another development of the invention, the links of the second number of conductors are parallel to one another.

It is advantageous that the first number of conductors are perpendicular to the second number of conductors.

The electrical connection from the third conductor to the series connection from the zone of electroluminescent Material with the pest body memory switch can advantageously be either a pest body threshold switch or contain an electrical capacitor.

The pest body memory switch and the pest body threshold switch can consist of glass semiconductor material.

Further features and details of the invention emerge from the following description of an exemplary embodiment based on the figures.

Show it:

B ¹ Ig. 1 and 2 show the simplified current-voltage characteristics of Pestkörper memory switches connected in series with a load resistor;

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3 shows the circuit diagram of a known electroluminescent device;

4 shows the circuit diagram of the electroluminescent according to the invention Contraption;

Pig. 5 is a perspective view of part of FIG electroluminescent device.

The best known form of electroluminescence consists in the excitation of a phosphor by an electrostatic one Field. The phosphor can be a particle suspension in a binder or a thin film. The best known The phosphor is zinc sulfide. Its lattice can be changed by doping with other atoms, which the Replace zinc or sulfur atoms. The direct current responsive phosphors (which are used for the present invention are required) are somewhat more difficult to manufacture than the phosphors that work with alternating current.

A direct current phosphor with particularly high brightness is formed by zinc sulfide, which is made by copper and Manganese activated and which has been suspended in an organic binder such as polymethyl methacrylate. This can be done by combining a pure zinc sulfide powder with the controlled addition of copper and manganese with water getting produced. The compound is dried, settled, sieved and stored at about 900 C in a controlled air atmosphere baked out. In another method, it is also possible to evaporate copper from a solution onto the surface and so a steep concentration gradient of the Achieve copper on the surface of the fabric. The phosphor is then made with a set amount of the organic Mixed binder. The resulting mixture is

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dries.

Glass solid-state threshold and memory switches are usually made of a material that is not a specified one Lattice period. Periodicity only exists in very small or microscopic sizes. Your effect lies in the fact that it is between two stable states of conductivity, namely between the blocking and the conductive State that can be switched by applying suitable voltages. The voltages can change, such as cause electronic changes, microscopic thermal effects and rotations of the polymeric bonds.

In Fig. 1, for a typical Pestkörper memory switch, which is connected in series with a typical load resistor, the simplified current-voltage characteristic shown. If the voltage applied to the switch is increased from zero, the current increases slowly. this is the resistance or blocking state. When reaching the threshold voltage + V. the current suddenly grows up the high value +1. The tension drops, because the through The impedance formed by the switch becomes smaller than that of the load resistance. The voltage is now lowered to zero, wherein the change in current is large depending on the unit of change in voltage. This is the conductive state. A large current pulse is required to bring the arrangement back into its blocking state. Will the tension initially increased in the negative direction, the result is a curve symmetrical to the origin. The change in current in Dependence on the unit of voltage change initially has a small negative value, which with opposite The sign corresponds to the value for the voltage increasing from zero. The threshold voltage -V. grows

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the current to the high value -I ₁ * If the negative voltage is led to zero, then the change in current, depending on the voltage change, assumes the same high negative value that has the opposite sign to the value for the return of the voltage from + V. is equivalent to.

In Fig. 2 the current-voltage characteristic for a typical solid-state threshold switch is shown, which is connected in series with a typical load resistance. The mode of operation of a Sohwellwertschaltungis is very similar to a memory switch. The main difference is that when the voltage is returned to the Value zero the part of the curve with the low resistance to the part with high resistance at a certain holding current is switched. At the voltage + Vp and the current + Ip falls the current to a curve point at which the current changes only slightly with the voltage. Something similar is the case with one Voltage with the value -Vp and a current with the value -Ip the current decreases to a lower value on the branch of the curve, which depends only on a small change in the negative current of the unit of voltage change. In other words, the voltages + Vp are threshold voltages. When the magnitude of the voltage drops below this threshold, the device switches from the conducting to the blocking state.

In practice, the actual curves will differ slightly from those shown in Figures 1 and 2 (e.g. the curves end exponentially with low conductivity). However, these differences have no influence on the mode of operation.

Solid-state glass switches have the advantage that both Schwel 1 worth. - a Ii; also memory switch with the same

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Technology can be produced. They can be deposited in the form of thin films. This is with the Microelectronic technology compatible.

A special well-known alloy that has the desired properties consists of arsenic, tellurium and germanium. In the lattice alloy, atomic proportions of 81 $ Te, 15 $ Ge and 4 $ As are suitable for a memory switch. With atomic proportions of 48 $ Te, J> 0% As, 12 $ Si and 10 $ Ge, the material is suitable for a threshold switch. The individual elements of the alloys are put together. The layers for the material forming the switches are deposited onto the substrate in a known manner.

Referring to Fig. 3, there is shown a circuit for a known electroluminescent imaging device. A series of horizontal conductors X., X ₂ ... forms a grid with a series of vertical conductors Y., Y _{2 ....} At the intersection of each conductor X with each conductor Y, the series connection of a solid-state threshold switch with an electroluminescent element is provided. At the intersection between the conductor X. and the conductor Y ₁ there is a solid-state threshold switch T ,, and an electroluminescent element EL ,,. In the same way, at the intersections between the conductors X- and Yp, X ₂ and Y ₁ , and X ₂ and Y _{2, there are} solid-state threshold switches T ₁₂ * ^T ? L and T ₀₀ and electroluminescent elements EL ₁₀ , EL ₀₁ and EL

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intended.

A voltage pulse is applied between a conductor X and a conductor Y, so that an electroluminescent Element and a solid-state threshold switch at the intersection of the conductors energy is supplied. For example, leads

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a voltage pulse between the conductor X. and the conductor Y _{p of} the combination between the threshold _{switch T 12} and the element EL.p energy. After the pulse has subsided, the threshold switch causes a high voltage to be maintained across the electroluminescent element for a relatively long time. After the voltage has decayed, the threshold switch automatically switches to "off".

This device has the disadvantage that the threshold switches are not sufficiently supplied with holding currents (Ip in FIG. 2) on the order of some / UA can work at which the electroluminescent elements generally work.

When replacing the threshold memory with memory switches, problems similar to those with the various Current levels are related. Again, suitable current pulses are applied to the intersection of the X and Y conductors, to which energy must be supplied. These pulses switch the memory switches at the intersections in the State of high conductivity. Only a small voltage drop occurs across each memory switch, so that a high voltage across the corresponding electroluminescent element. For example, if a voltage of 60V is applied via the combination at the intersection of the X and Y conductors, the memory switch can take over 10 V, with 50 V remaining with the electroluminescent element. With this arrangement, however, it is not easy to obtain the Switch back to their blocking state.

In Fig. 4 is a partial view of the invention Device shown. A series of vertical ladders

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Y, Yp ... form with a series of horizontal ladders

X .., Xp. ... and with a series of horizontal conductors X _{] B} , Xp _B ... a matrix. The conductors J ^ and X ₁ and the conductors X _OA and X "_ each form a pair. At the intersection between each Y-conductor and the second conductor of each X-conductor pair, the series connection of a Pestkörper-Speichererschal age and an electroluminescent element is provided. For example, a plague memory switch M and an electroluminescent element EL.- are provided between the conductors X and Y ₁ . Likewise, a Pestkörper memory switch M ₂₁ and an electroluminescent element E ₂ -I are between the conductors Xp. and Y. arranged. In the same way, a body memory switch M ₁₂ and an electro-luminescent element EL ₁₂ with the conductors X .. and Y ₂ , and a body memory switch M _?? and an electroluminescent element EL ^ ₁₀ with conductors X „. and Y _o connected.

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A pest-body threshold switch connects the first conductor of each X-conductor pair to each series circuit of a solid-state memory switch with an electroluminescent element. In the exemplary embodiment, a solid-state threshold switch T _{n is} connected to the conductor X _1x , and the solid-state memory _{switch M 11} and the electroluminescent element EL ₁₁ . There is also a solid-state threshold _{switch Tp 1} between the conductor Χ οτ3 and the solid-state memory switch

there

Mp ₁ and the electroluminescent element ELp ₁ switched. In the same way, there is also a solid-state threshold _{switch T 10} between the conductor X nr5 and the electroluminescent one

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EL element ₁₂ and the solid-state memory switch M _{1 o,} and a solid-rchwellwertschalter between the conductor Xp "and the electroluminescent element ₂₂ and the EL Festkörperi'peicherschalter M ₂₂ are provided.

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In the following, a first method of operating the circuit shown in FIG. 4 will first be described.

Input signals are applied to a logical network 1. The network selects which intersections of the matrix will be supplied with energy. The signals go from the logical network 1 to the Y control circuit 2 and to the X control circuit J5. This ensures that only standard voltage pulses are fed to the intersection points (the pulses have a length of approximately 1 ms with slowly falling planks). A special method, called "linescan", consists of scanning at the desired intersection points between an X-conductor, such as, for example, the conductor X .. and the row of Y-conductors Y., Y ".. ., such as the conductors Y-, Y ,, Y ₁ . to apply a voltage. Then the next leader Xp. and the associated Y-conductor can be used for voltage pulses. In this way the entire matrix can be scanned. The rows of conductors X _1n , X ₀ T ₃ * · · · and the connections

Ir) there

Genes to each memory switch and electroluminescent element containing the Pestkörper threshold switches T «., Tp., T, p, T ₂₂ ··· are used for erasure at the end of each line scan. Assuming that the memory switches Μ ", and M _{21 are} in their conductive state (ie in the ON state) and the memory switches M.ρ and Mp ₂ in the blocking state (ie in the OFF state) at the end of the particular scan, it is necessary to switch the memory switches M .. and M _2. to the OFF state without switching the switches M. _? and M _p? to the ON state In other words, it is necessary that the entire matrix at the end of each scan in the OFF state, so that any change in the electroluminescent arrangement of the elements, the oN state between two samples in is possible. between the conductor _X1. and the conductor X ₁₀ and between the conductor X ₀ ,

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and a pulse is applied to conductor X _gB. The pulses are generated by the X control circuit JS. These pulses are placed at the end of each scan and can be placed between each pair of X conductors at the same time. The pulses are large enough to switch memory switches M,

,,, M ₁₂ * ** 21 * ** 22 ***

T ₂₂ ... to supply sufficient electricity.

For example, a pulse of 100 mA with a length of 1 / usec and a sharp trailing edge is required. During the passage of the edge, the memory switches H. 1 and M _{21 are switched} to the OFF state and the threshold value switches T ₁₁ and T _{21 are switched} to the ON state. The size of the pulse applied via the threshold value switches Tj ₁ and T ₂₁ drops to a value determined by the capacitance of the electroluminescent elements EL ₁₁ and EL ₂₂ until the current reaches the holding value I ₂ (PIg. 2). Then switches T ₁₁ and T ₁₂ turn themselves off. However, they are turned on long enough that the memory switches M ₁₁ and M ₂₁ , which are originally turned on, _{are isolated from the memory switches M 12} and M ₂₂ , which are originally turned off, so that only the former are turned to the OFF state. The pulses applied between the X-conductor pairs are not sufficient _{to switch the series combinations of the memory switches M 12} , M ₂₂ , which were originally switched off, and the threshold value _{memories T 21} , T ₂₂ all to the ON state. For this, the voltage gradient would have to be approximately twice as large as that applied across M ₁₁ and T ₁₁ . As a result, all memory switches M ₁₁ , M ₂₁ , M ₁₂ , M ₂₂ ... are switched back to the OFF state. The drop in the current pulse is considerable. He has to be quick. However, this is ensured by the rapid voltage rise at the threshold _{switches T 1} and T ₂₁ when they switch to the OFF state.

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It is possible to carry out the same method _{by replacing the threshold value switches T 31} , T ₂₁ , T _J2 , T ₂₂ ... with capacitors. These work in the same way. They isolate any combination of an electroluminescent element with a memory switch and make it possible to turn off the memory switches that are switched on. The voltage applied to them gradually goes back to zero. Their impedance is sufficient to prevent the memory switches connected in series and switched off from being switched on. The capacitance C of the capacitors depends on the case at hand. However, it must be selected with a view to the size of the capacitance of the electroluminescent elements and the resistance R of the memory switch. A typical value is a few picofarads. Fast switching times require that the product RC be small.

A second possibility for operating the circuit shown in FIG. 4 is described below. It is assumed that the solid-state memory switches, the solid-state threshold switches and the electroluminescent elements are all in the OFF state. In order to operate the electroluminescent element EL ₁₁ , a large voltage (approximately 100 V) is applied between the conductors X- with the aid of the control circuit 3. and laid the conductor X _1B . The impulse is sufficient to switch on the threshold switch. A typical voltage pulse would have a size of approximately 80 V and a duration of approximately 1 / usec. When the threshold switch Tj. is switched on, then a large part of the potential difference between the conductor Y. and the conductor X .. is above the memory switch M-., so that the memory switch M _{11 is} switched on. At the end of the pulse applied between the conductors X .. and X _1R , the threshold switch T .. switches to the OFF state, since no holding current then flows _{through the threshold switch T 11.} The memory-

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switch M .. remains switched on, however. While the memory switch M is switched on, the electroluminescent element EL _{51 works} because the voltage between the conductor X-. and the head Y- remains large.

When the electroluminescent element EL., And the memory switch M ,. should be switched off, then another pulse, for example 80 V for 1.5 / usec, is between the conductor X ₁ . and the conductor X._, laid. This im-

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puls switches the threshold switch T .. back on. When the threshold switch is switched on, the voltage across the memory switch M .. increases, so that the memory switch M. is switched off again. At the end of the pulse, the threshold switch T-. turned off again. The intensity of the light emitted by the electroluminescent element EL ₁₁ drops after the memory switch M ₁₁ and the threshold switch T _{11 are} switched off.

In the second method, the potential of the conductor Y _{1 is} always positive compared to that of the conductors X .. and X _1ß. During periods in which it is not necessary to work with one of the intersections between the conductor Y ₁ and the X conductors, the potential difference can be reduced to approximately 70 V so that there is no serious reduction in the brightness of the electroluminescent elements of these intersections emitted light occurs due to continuous operation at too high a voltage.

In this second method, all intersection points except those containing the electroluminescent element EL ₁₁ , the memory switch M ₁₁ and the threshold switch T _{11 can} be addressed and deleted in a similar manner as for the electroluminescent element EL ₁₁ , the memory switch M ₁₁ and the threshold switch T ₁₁

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comprehensive intersection has been described. The address and erase operation for the electroluminescent device as a whole can be done by the line scan method.

In the second method described with reference to FIG. 4, the positions of the threshold value switch and the memory switch can be interchanged at each point of intersection. For example, the position of the memory switch M ,, with the position of the threshold memory Τ.-, the position of the memory switch M. ρ with that of the threshold switch T ₁₂ , the position of the memory switch Mp with that of the threshold switch T ₂ - and the position of the memory switch Mp ₂ are swapped with that of the threshold switch T _22.

Furthermore, the circuit shown in FIG. 4 can also be converted in the second method. The position of the electroluminescent element is interchanged with the position of the memory switch at each intersection. For the circuit shown in FIG. 4, this means that the position of the electroluminescent element EL., With the position of the memory _{element M 1} -, the position of the electroluminescent element EL- _p with the position of the memory element Mj ₂ and the position of the electroluminescent element Elements EL ₂₂ ^w ith the position of the storage _{element M 22 are} swapped. The mode of operation is the same for each point of intersection, as was described above with reference to FIG. 4. On the other hand, however, the roles of the ladder are interchanged. It should be assumed that it is necessary to drive _{the electroluminescent element EL 11.} For this purpose, a high voltage (approx. 100 V) is applied between the conductor Y. and the conductor X ₁ . placed. The for switching the threshold switch T., and the memory switch M-. from the ON state to the OFF state

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required voltage pulses are placed between the conductors Y ₁ and X _1B . The conductor X _1A is always held at positive potential with respect to the conductor X. _R.

Figure 5 shows a perspective view of part of an electroluminescent device. It illustrates the production of the circuit shown in FIG. A screen 4 with a front side 4a and a rear side 4b contains a central layer 5 »which consists of an electroluminescent phosphor material which has been produced as described above (ie it can consist of zinc sulfide doped with copper and manganese and suspended in polymethyl methacrylate). The electroluminescent material can be localized on certain active areas of the layer. The areas with electroluminescent material represent the electroluminescent elements EL of FIG. 4. On one surface of the layer 5, a conductor 6 is provided, which provides the common electrical contact or point between the element EL., And the switch M ₁₁ of FIG. 4 forms.

A solid glass body suitable for a memory switch is deposited in the layer 7. This forms the switch M ₁ in FIG. 4. The layer 7 is located on the upper side of the conductor 6. A solid glass body suitable for a threshold value memory is also deposited in the layer. This forms the switch T ₁₁ of FIG. 4. The layer 8 is located on the lower part of the conductor. An electrode 9, which forms the conductor X _1A of FIG. 4, runs horizontally over the screen 4 on the side of the layer 5 and crosses the layer 7. In the same way runs an electrode 10, which the conductor X ₁₁ -. of Fig. 4

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forms, horizontally across the screen 4 on the side of the

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Layer 5 and crosses layer 8. An electrode 11, which forms the conductor Y ₁ of FIG is. The conductor 6 and the electrodes 9, 10 can be formed by the deposition or deposition of molybdenum, first covering the entire surface of the layer 5 (first the conductor 6 and then the electrodes 9, 10 are formed) and then the known photo - and etching techniques are used. The layers 7 and 8 can be deposited through a mask or applied over the whole area and processed with the aid of the known photo and etching techniques. The electrode 11 is made of a transparent material such as tin oxide.

The entire screen 4 (partly not shown in FIG. 5) represents the complete matrix (partly not shown 4. The complete matrix is obtained by repeating the arrangement shown in FIG the entire surface of the screen is formed in an identical manner. In particular, the electrodes 9, 10 and others run Pairs of identical electrodes horizontally, thus forming all X-conductors of the matrix. The electrodes 11 also run and other electrodes vertically, forming the Y-conductors of the matrix. Layers 7 and 8 and others identical Layers form the solid-state switches, and other conductors identical to conductor 6 form the common contacts (Dots) between each solid state switch and each electroluminescent Element.

The screen 4 can be modified in that the entire arrangement is supported on a substrate such as glass will. The layer 8 and forming the threshold value switch

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all other threshold switches, not shown, can be replaced by thin film capacitors deposited by known techniques.

In operation, light is emitted from the rear side 4b of the screen 4. It is also from the front 4a sent out when the material of the conductor 6, the layer and the electrode 9 is transparent.

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Claims (6)

2U9688 Claims ι l) Electroluminescent device in which a first number of conductors with a second number of conductors forms a number of points of intersection, in which each point of intersection is assigned an area of electroluminescent material responsive to a control voltage and in which means for applying the operating voltage the area are provided of electroluminescent material, characterized in that the intersections between the first number of conductors (Y ₁ Y Yp ···) ^unc * eggs second plurality of conductors (x .., ^x; mJ ^{x x} * 2A 2B ''' ^ ^{Form pairs} , each pair consisting of the intersections of one link of the first number of conductors (e.g. Y.) with two links of the second number of conductors (e.g. X _1A > ^ ir), so that the area is made of electroluminescent material (EL ₁₁ , EL, p, ELp., ELp ₂ ...) responds to DC voltage and is electrically connected in series with a Pestkörper memory switch (M ,,, M _.? , Mp ,, Mg ₂ ···) that the Series connection from the area ch made of electroluminescent material (e.g. EL ₁₁ ) and from the solid-state memory switch (e.g. M ,,) between a first conductor (e.g. Y ₁ ) and a second conductor (e.g. X _1A ) is arranged that an electrical connection between the series circuit and a third conductor (for example X _1B > X _2B · ■ ··) is provided that the operating voltage is applied in the form of a DC voltage between the first and the second conductor, and that means are provided for the electroluminescent device to between the first and to apply electrical pulses to the second conductor, by means of which the solid-state memory switch can be switched between its conductive state (ON) and its blocking state (OFF). 209827/08 ^ 0 2U9688 2. Electroluminescent device according to claim 1, characterized in that the first conductor is one member of the first number of conductors and the second and third conductors are two
Links correspond to the second number of ladders. J. Electroluminescent device according to claim 1, characterized in that the third conductor is one member of the first plurality of conductors and the first and second conductors are two
Links correspond to the second number of ladders. 4. Electroluminescent device according to one of claims 1-3, characterized in that the two members of the
second number of conductors are parallel to each other. 5 · Electroluminescent device according to one of claims 1-4, characterized in that the first number of
Ladders is arranged perpendicular to the second number of conductors. 6. Electroluminescent device according to one of claims 1-5, characterized in that the electrical connection between the series circuit and the third conductor is a
Pest body threshold switch (e.g. T.,) contains. 7 · Electroluminescent device according to one of claims 1-5, characterized in that the electrical connection between the series circuit and the third conductor
contains a capacitor. 209 8 27/0840 Blank page