DE2118214C - Monolithic integrable Fhpflop circuit - Google Patents

Description

The invention concerns a monolithically integrable one bistable flip-flop circuit with two halves of the same construction, each with a switching transistor and contain a control transistor of the same line type, their collectors with each other as well as' whose emitters are connected to one another and to the S-attitude zero point, where in each case the base of the switching transistor of the one Fhpflop half on the supply voltage via a working resistor connected collector of the switching transistor of the other flip-flop half, furthermore, the bases of the control transistors each have a capacitance at a common control

input are connected and wherein the base-collector path of the control transistor of each flip-flop half a linear or non-linear component is connected in parallel.

So this flip-flop circuit consists of two

NOR stages with two inputs each, of which one input (the base of the switching transistor) connected to the output (the collector of the switching transistor) of the other stage is. The second input (the basis of the control

ao transistor) is connected to the control input via a capacitance connected.

So that such a flip-flop circuit can be switched over safely by input pulses, must be ensured by additional circuit measures that for the switching process the Information about the previous switching status is stored in the capacitors in such a way that they are charged to different potentials, so that the bases of the control transistors are in different Preparatory states are.

According to the prior art, this preparatory state can be achieved in that the Base-collector path of the respective control transistor is a linear or non-linear component is connected in parallel. For example, according to French patent specification 1548137, this is a high-resistance one Resistance provided. According to the German Auslegeschrift 1295 001, the German Offenlegungsschrift 1762 914 and the Swiss

In patent specification 495 661, however, a semiconductor diode can also be provided as the component to be connected in parallel with the base-collector path of the control transistor. Furthermore, according to Swiss patent specification 493 878 or German laid-open specification 2 008 147 of the base-collector path of the control transistor, the emitter-collector path of an additional transistor of the conductivity type of the control transistor can be connected in parallel, in the case of the latter Swiss patent specification, the base of this additional transistor is connected to the tapping point of the working resistor split into two partial resistances of the associated flip-flop half, while according to the last-mentioned German patent application, the base of the additional transistor is fed with a constant current so that this transistor is continuously saturated will. Finally, the applicant's earlier application P 19 63 225.8 suggests connecting the emitter-collector path of a complementary additional transistor to the base-collector path of the control transistor in parallel, the base of which is coupled to the base of the switching transistor of the same flip-flop half.
Although the own proposal according to the earlier application mentioned is superior to the other preparatory circuits mentioned according to the prior art, the potential is there. at the base of the sleucr transistor of the conductive flip-flop half and c-

finishes. From the Swiss patent 495 661 mentioned, it is known to connect the base-emitter path of the control transistor, the Koliektor-Emittcr path of a further additional transistor whose base is connected to the base of the switching transistor of the same flip-flop half. As can be seen from the curve images published there of the equipotentiality curves measured at various points on the circuit, this additional transistor can be used to ensure that the base potential! of the control transistor of the conductive flip-flop half assumes a defined potential which is less than the maximum voltage of the input pulse. In the same way, the third transistor is connected in series with a fine path to the Em.tter-Kollekto NOR-Slufe. a transistor of the NÜK-Mure in the switching transistor of the same
closed.

~ ° _this r

ure im ^

_to " _c .

included. . _{base of}

This preparatory circuit nail m ^

Control transistor of the conductive b iipnop ^ _ßa through on a lower Föleniwi * sis of the control transistor of the S ^es P Kollek-

Half of that on the ^ESCN in Series S ^{< "1} Transitor-emitter junctions of the two gen" ι _apa capacity bother taking place charging of ⁿⁱ "jj *? , {, _about

ggp is prevented because the ldu ^^ ^

Transistors are also from the aforementioned German 15 the second transistor of the ^NUK;? '' _{Tiin "snu} iipunkt Auslegeschrift 1 295 001 and the German conductive switching transistor called for Scnauung ^ see Offenlegungsschrift 1762 914 lekannt is derived aller- This increases jeoocn.

khif d Fk consumption of such a ^F "P ^no P" ™ '5

at what is undesirable Also te.ltsi £ ™ of the input impulse in the above oei ^ ^ ^ perennial; » described art _and ^s

the conductive and the blocked ™ Ρ " ^Ο Ρ ~" of _{the au} ' _f in such a way that by far the largest ^l "= · _R -

Flip-flop halves are divided so that both the part that is lost in the conductive flip-flop half - <» ^es ^ ._ locked state, flip-flop half of 25 output pulses is only used for charging, £ 5 _each from the switching by the control pulse tärcn capacity and thus ais j ^

is initiated, as well as the conductive flip-flop halves h l h nicm opi

Consume part of the control pulse. With

ggs

but without dali their function in these publications would be explained in more detail.

A transistor switched in this way, however, has the disadvantage that the one over the common Control input and the two capacitances control pulse coupled in such a way to the two Flip-flop halves that both the in

fHalf Energy ™ | _it

In other words, the tax

tärcn capacity serves and som j is lost, what also as nicm opi input resistance interpreted weroen καιη.

In contrast, the additional tranche is ^ '* ".

fid iht part of the pre-threesome

In other words, the tax against

At the outset, the input resistance of this invention is not part of the known circuit and is not yet optimal because it is a division. but an additional transistor to prepare men υ s i Si FliflHalf, which the e.iinuu . & «

Task of holding the Basispotentais c border control transistor and the ^br " ^onu " *. · _Be anti-gangrism.des to the circumcision below

g p

this control pulse in the conductive flip-flop half c via the collector-emitter path of the further additional transistor after the Schallunnsnullpunkt is derived.

It is therefore the object of the invention, the Einaangs to improve specified flip-flop circuit in such a way that the base of the "control transistor the conductive flip-flop half also on

il li

35

Way solves. . _Ρ - _H i _s

In one embodiment, the tranuu_ g < monolithic in a monocrystalline half-kite body.

transistor of the conductive flip-flop half also on an integrated circuit arrangement with a w a fixed and as low a potential as possible is 4 ° device type of the control transistor Kompiemenraren and that in addition this flip-flop half the onsistor as a non-linear ^component *. ^he S ^1D * ^s '",

id by a particularly advantageous flat anoranunfc

of the individual components that each of the »expensive

gg transistor, the switching transistor and the £ ^u

duration is lost, in which the input pulse an- 45 sistor Her a flip-flop half and the secondary transistor of the other ^F ^ «°

a common ^ ⁰ '^ / ⁶ are arranged in such a way that S ^

transistor and additional transistor as usual excluded

RA advises dem

pp

output pulse offers the greatest possible resistance, d. This means that in this flip-flop half there is no input control energy during the entire time

il

located. This is particularly important when several flip-flop stages are connected to a frequency divider in series be switched that the output pulse of the previous stage as Eiimanesimpuls the subsequent serves. ""

This object is achieved by the monolithically integrable bislabile flip-flop circuit specified at the beginning in that the base-collector circuit of the control transistor of each flip-flop half is connected in parallel in addition to the linear or non-linear component in each case an additional transistor of the conductive type of the sleuertian isolator in such a way that its Emitter is directly connected to the base of the control transistor and its KoI-lektor with the collector of the Slcuerlransislors and that the base of the additional transistor is connected to the base of the Slcuertransistor of the other flip-flop half. Admittedly, a formally largely similar flip-flop series is known to the German Offenlegimusschrift 1 ° .S5 ¹ ) 42, in which the preparatory network has three transistors of the Lriluimtype of the gate transistor, two of these transistors being connected to a NOR gate and

Planartransisturstrukturen m emer RA ra t the Zusatzlransislor as a medium adjacent to each other, and that dei ^ p transistor ausgemiaei as between the ^"flat ™ ⁿ ^ ^ structures of additional transistor to! Sthalttransistor angeoidnete Lateraltransistorstruktur in. The collector region to the base zone of the z.usa u transistors whose emitter zone is identical to the base zone of switching transistor and whose base zone is identical to the collector zone oxr ot.ni control, the switching and the additional iransisioi.

The invention will now be described in connection with ikn Hguren shown in the drawing naner sounds. ,,, · ,, ι «" ^ ι ,, η, Fig. 1 shows a pinch board of the extension.

from 6 ₅ according to the circuit; ,

F i g. 2 shows the Pnnz.pschaltb. d one «1, monolithic integrated technology executed circuit F i g. 3 shows a schematic representation of the d.e.

5 6

Arealial arrangement of the individual transistor trains / .eichen _ the conductive and the right flip-flop structures of the circuit according to FIG. 2 shows the locked flip-flop half on one half, i.e. the one with the second index 2 of the Bc-Halblciterplättclien and mark. Furthermore, FIG. 4 shows in a schematic way the section - it is assumed that the voltage of the supply view of the arrangement according to FIG. 3, the voltage source U _{ti being} approximately 1.5 volts. Then section along the line AA is shown. at the collector of the additional transistor Ol cine span-The flip-flop circuit shown in Fig. 1 consists of 0.1 V, at the collector of the additional transistor of two symmetrical halves, each of which has the 7'32 one of 0.5 V at the base of the control switching transistor 7'lt or 712 and the sleuertran transistor 722 and thus also at the base of the Zusislor 721 or T22, the collectors of which with a salt transistor / "31 of about 0.4 V and connected to each other The parallel-connected at the limit of the additional transistor 7 31 one around the collectors are connected to the supply voltage U _tt via the working resistance /? 1 or the Sältigungs voltage of the collector-emittci path Rl , the additional transistor 731 slightly higher span while the pai switched off emitter at the circuit - voltage than to its collector, i.e. about 0.15 V. The connection zero point, which is connected to the auxiliary transistor of the conductive flip-flop half, is the other point of the voltage squclle iden- lent inversely operated, ie. the emitter exercises the function table. This configuration, ie a flip-flop of a collector and the collector that half, provides, as mentioned at the beginning, a NOR switch of an emitter. The collector-emitter saturation represents. The bases of the control transistor and the voltage of inversely operated transistors, however, the switching transistor as the two inputs of the NOR-20 are very low and are of the order of magnitude of the stage, while the output of the parallel-50 mV.

switched collectors is formed. If a positive transistor base of one flip-flop half is applied to the par input pulse, this pulse acts on a parallel-connected collector of the other flip-flop times via the capacitance Cl on the emitter of the half-way connected. Between the SteucranschluB.V 25 salt transistor 7 31 and capacitance ('2 on the and the bases of the Stcuettransislorcn 7'21, 722 of each base of this transistor 7 "31. Due to the flip-flop half a capacitance C 1 and C respectively "2, the symmetrical design of the circuit act 111 on the input signals to the flip-flop Stufc base and emitter of the same amplitude so that einwirken.Zur realization dieserKapa ^f itälen C 1 and to the overdriven inverse operation of this Tran -. (" 2 Both conventional capacitors and 3 ° sistors cannot change anything, but rather the current generated by the flow-in or blocking-leakage current flows through the collector in a monolithic manner Integrated circuits use this transistor as the base of the switching transistor 712 del. the locked-Flipfiop Hülfte and supported there Likewise, the toggling of the usual JVirkung across the capacitance Cl elTekttransislor-Schaltungcn MOS condensate 35 linden in the art of MOS FeId- to the base of Stcuerlransistois 7 22 entering sntoren use. Control pulse. Thus, in the conductive flip-To facilitate the safe switching from the flop half no control energy is lost as in the one in the other switching state of the flip-flop arrangements according to the prior art, but the two linear or non-linear circuits are used by the according to the invention Arrangement of the additional linear components K 1 or K1, which of the respective transistor is connected in parallel to the portion of the control pulse that falls on the conductive flip-flop halftone base-collector path of the slave transistors. As such, listless to switch to the locked flip-flop incarcs or non-care "; Component can be half used. In this way, however, when describing the prior art, a control pulse with a lower energy content is used as a whole. 45 required.

In a manner according to the invention, the two

set transistors 731 and 732 provided. Their Kololithiseh integrated way on a cinkrislallinen

lcktor-emitter-Streckc the base-collector-Stieckc semiconductor body realized bistable flip-flop switching

of the respective control transistor shown in parallel in this way according to the invention. The circuit

is switched. that the emitter of the Ziisatztiansistor 5 ° corresponds essentially to that of FIG.

731 or 7 32 with the base of the control transistor, however, it is complete as a preparation

721 or 722 is directly connected. while the mental transistor according to the older own application

Collectors of additional transistor and control transistor dung P 19 63 225.S provided. The preparation

are also connected to each other. After the transistors 741 and / 42 are connected so that.

finding is now the basis of the respective additional table 55 whose collector with the base of the associated control

sistor of a flip-flop half with the base of the transistor 7 21 or 722. whose emitter with derr

Control transistor of the other flip-flop W ^ ftr connected to the common collector of the associated switch

the, d. That is, the base of aes additional transistor 7 31 is made up of Stcucrtransistors 7 11, 721 or 722 and those

the base of the control transistor 722 and the base base with the base of the switching transistor 711 or

of the additional transistor 732 is directly connected to the base of the control 60 712 of the same flip-flop half

transistor 721 directly connected Assuming again that the left flip-flop

Due to the additional transistor according to the invention, half is in the conductive state, so liegei

ensures that the base of the control transistor is at the emitter of the preparation transistor ·; 741 0.1V

conductive flip-flop half on a fixed and, if possible, at its base 0.5 V and at its K (Ilekto

low potential. For a better understanding 65 0.15 V, i.e. this pnp-TransisWir is blocked. we

Assuming a state is assumed in which the transistor 731 in the addition) is not present, so here

the left flip-flop half shown in the drawing c. so the base of the associated control transistor 7 21 wedge

the flip-flop half with the second index 1 is the defined potential

The potential relationships at the corresponding preparation transistor T 42 of the blocked flip-flop half are as follows: The emitter is at 0.5 V, the base at 0.1 V, that is, this pnp transistor is fully switched on, so that its collector potential is around PNP transistors yes negative collector-emitter saturation voltage to be calculated is lower, that is to about 0.4 V. The current flowing through the collector-emitter path of this preparatory transistor T 42 consequently charges the input capacitance Tl to about 0.4V.

In Fig. 3 is a schematic of the arrangement of the individual transistors in a monolithic on one common single-crystal semiconductor chip integrated circuit of the flip-flop circuit according to FIG. 2 shown. Here, in a further embodiment of the invention, the control, switching and additional transistor one flip-flop half and the complementary transistor, the preparation transistor, the other flip-flop half arranged in a common insulating island of the semiconductor body. In Fig. 3 is this isolating island indicated by the dashed line. The arrangement is made in such a way that Control, switching and additional transistor as usual planar transistor structures with perpendicular to the semiconductor surface directed main current direction are formed, the respective additional transistor in the Middle between the switching and control transistor is arranged. The preparation transistor of the other The flip-flop half is a lateral transistor structure with the main current direction parallel to the semiconductor surface formed between the switching transistor and the additional transistor in the semiconductor body located. The planar transistor structures are expediently located next to one another in a row.

The F i g. 3 shows the top view of such an integrated semiconductor chip with the two adjacent insulating islands for the two flip-flop halves. The large rectangles drawn in for the individual transistors correspond to the respective base zones / ill, B21, B31, B12, B22, B 32. The respective emitter zones Eil are in these base zones. E21, £ 31, £ 12, E22, E32 used in the usual way in planar technology. Base and emitter zones are contacted and according to the circuit diagram of FIG. 2 connected to one another, which is indicated schematically by the small rectangles and the corresponding line routing. Furthermore, the island material is also provided with a contact, which is shown in FIG. 3 is denoted by A 1 and A 2, respectively. This common island contact combines the collector zones of the switching, control and additional transistor as well as the base zone of the lateral transistor structure of the preparatory transistor via the corresponding η-conductive common zone (see FIG. 4).

This arrangement results in a particularly space-saving and with regard to the surface of the semiconductor wafer to lead wiring particularly favorable arrangement.

Fi g. 4 shows the semiconductor body of this figure in section along the line AA of FIG. 3. An n-conductive layer 2 is arranged on the p-conductive starting material 1, which layer is surrounded by the p-conductive zones 3 and thus forms the insulating island. As is customary in monolithically integrated circuits, a highly doped η-conductive zone 4, which represents the so-called buried layer, is also arranged between the η-conductive layer 2 and the starting body 1. The individual transistors T1, T21 and T31 are inserted into the η-conductive zone 2 as shown, the complementary preparatory transistor T42 being formed between the transistors TU and T31. Here, the p-conducting base zone of the switching transistor TIl is with the emitter zone of the preparatory transistor, the p-conducting base zone of the additional transistor T31 with

ίο the Kollektorzor.e of the preparation transistor and the common collector zone of the switching, control and additional transistor with the base zone of the preparation transistor identical.

The load resistances R 1 and R 2 can be

»5, especially in the case of high resistance values, should be replaced by transistors that are connected as constant current sources. In the case of bipolar transistors, their collector-emitter path replaces the connection between the switching transistor collectors and the supply voltage U _n , while the base of these transistors is fed by a constant current. Field effect transistors can also replace the load resistors. Here there is the further possibility of either using these field effect transitions

* 5 sistors as high-ohmic resistors or likewise to operate as constant current sources. There are junction field effect transistors as well as insulating layer field effect transistors, metal oxide field effect transistors are particularly suitable.

The advantages of the flip-flop circuit according to the invention can be seen in particular in the fact that they Over a wide supply voltage range and one with regard to the input pulse amplitude as well large area works safely. Furthermore, this circuit is also even at very low levels, in the individual Transistors flowing currents absolutely reliable. It became safe to work with too found for currents in the order of magnitude of 100 η Α. Even with these minor ones, in each case

controlled flip-flop half-flowing currents, the two switching states are clearly established, d. h .. one flip-flop half is clearly activated and the other is clearly blocked.

Because of these very favorable properties

Even with the lowest currents, the flip-flop circuit according to the invention is particularly suitable, among other things, to serve as the basic building block of a binary counting chain for quartz-controlled clocks. The one in the order of magnitude Total power consumption of a few microamps of such up to fourteen levels Binary counter chain enables the use of so-called button cells as a DC voltage source to operate these clocks. Also quartz-controlled Wristwatches can be equipped with a binary counter chain constructed from the flip-flop circuit according to the invention can be operated on such a button cell for about a year.

Another field of application of the flip-flop circuit according to the invention is binary frequency

divider for use in electronic organs. Here too, the property of the invention makes itself felt Flip-flop circuit to be operated with low currents, advantageously noticeable. Also digital Calculators can be used with the invention

according to the flip-flop circuit as a basic component for counters, shift registers, allocators and memories, etc. being constructed.

Sheet Zei

Claims (2)

Patent claims: 1. Monolithically integrable bistable flip-flop circuit with two halves of the same construction, each containing a switching transistor and a control transistor of the same line, whose collectors are connected to each other and their emitters are connected to each other and to the circuit zero point, with the base of the switching transistor of one flip-flop half is connected to the collector of the switching transistor of the other flip-flop half connected via a load resistor to the supply voltage, the bases of the control transistors being connected to a common control input each via a capacitance and the base-collector path of the control transistor of each flip-flop half being a linear or non-linear component is connected in parallel, characterized in that the base-collector path of the control transistor (721, 722) of each flip-flop half in addition to the linear or non-linear component (Kl. K 2) each have an additional transistor (T3 1, 732) of the conduction type of the control transistor is connected in parallel in such a way that its emitter is connected directly to the base of the control transistor and its collector to the collector of the control transistor and that the base of the additional transistor (731, 732) is connected to the base of the control transistor (7221 , 721) of the other half of the flip flop is connected. 2. The circuit arrangement according to claim 1, monolithically integrated in a monocrystalline semiconductor body, with a transistor complementary to the conductivity type of the control transistor as a non-linear component, characterized in that the control transistor (721, 722), the switching transistor (T 11, 712) and the additional transistor ( 731, 732) of one flip-flop half and the complementary transistor (742, 741) of the other flip-flop half are arranged in a common insulating island of the semiconductor body (1) in such a way that the control transistor, switching transistor and additional transistor are in a row as conventionally designed planar transistor structures the additional transistor lie next to one another as a central transistor structure and that the complementary transistor (742, 741) is designed as a lateral transistor structure arranged between the adjacent structures of the additional transistor and the switching transistor, the collector zone of which with the base zone of the additional transistor, the Emitter zone with the base zone of the switching transistor and its base zone with the collector zone common to the control, switching and additional transistor is identical.