DE20202493U1 - Light emitting diode with improved brightness - Google Patents

Light emitting diode with improved brightness

Info

Publication number
DE20202493U1
DE20202493U1 DE20202493U DE20202493U DE20202493U1 DE 20202493 U1 DE20202493 U1 DE 20202493U1 DE 20202493 U DE20202493 U DE 20202493U DE 20202493 U DE20202493 U DE 20202493U DE 20202493 U1 DE20202493 U1 DE 20202493U1
Authority
DE
Germany
Prior art keywords
light
emitting diode
layer
diode according
transparent material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE20202493U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Opto Tech Corp
Original Assignee
Opto Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Opto Tech Corp filed Critical Opto Tech Corp
Priority to DE20202493U priority Critical patent/DE20202493U1/en
Publication of DE20202493U1 publication Critical patent/DE20202493U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Description

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßtThe description text was not recorded electronically

Claims (10)

1. Lichtemittierende Diode mit verbesserter Helligkeit, gekennzeichnet durch eine epitaxiale LED-Struktur mit mindestens einer lichtemittierenden aktiven Schicht (36) mit einer Vielzahl Abstandshalter (42) in der lichtemittierenden aktiven Schicht (36),
mindestens einem leitenden Kontakt (41), der an der Unterseite der lichtemittierenden Schicht (36) dort vorgesehen ist, wo kein Abstandshalter (42) in der lichtemittierenden Schicht (36) ausgebildet ist,
eine Transparentmaterialschicht (43), die in den Abstandshaltern (42) ausgebildet ist,
eine Kleberschicht (46), die zwischen der Transparentmaterialschicht (43) und einem permanenten Substrat (47) ausgebildet ist,
eine Grundelektrode (49), die an der Unterseite des permanenten Substrates (47) ausgebildet ist, und
eine Gegenelektrode (39), die an der Oberseite der epitaxialen LED-Struktur ausgebildet ist.1. Light-emitting diode with improved brightness, characterized by an epitaxial LED structure with at least one light-emitting active layer ( 36 ) with a plurality of spacers ( 42 ) in the light-emitting active layer ( 36 ),
at least one conductive contact ( 41 ) which is provided on the underside of the light-emitting layer ( 36 ) where no spacer ( 42 ) is formed in the light-emitting layer ( 36 ),
a transparent material layer ( 43 ) which is formed in the spacers ( 42 ),
an adhesive layer ( 46 ) formed between the transparent material layer ( 43 ) and a permanent substrate ( 47 ),
a base electrode ( 49 ) formed on the underside of the permanent substrate ( 47 ), and
a counter electrode ( 39 ) formed on the top of the epitaxial LED structure. 2. Lichtemittierende Diode nach Anspruch 1, dadurch gekennzeichnet, daß außerdem eine Reflexionsschicht (45) vorgesehen ist, die zwischen der Transparentmaterialschicht (43) und der Kleberschicht (46) ausgebildet ist.2. Light-emitting diode according to claim 1, characterized in that a reflection layer ( 45 ) is also provided, which is formed between the transparent material layer ( 43 ) and the adhesive layer ( 46 ). 3. Lichtemittierende Diode nach Anspruch 2, dadurch gekennzeichnet, daß die Reflexionsschicht (45) und die Kleberschicht (46) durch Verwendung des gleichen Materials gebildet sind.3. Light-emitting diode according to claim 2, characterized in that the reflection layer ( 45 ) and the adhesive layer ( 46 ) are formed by using the same material. 4. Lichtemittierende Diode nach Anspruch 1, dadurch gekennzeichnet, daß außerdem eine Stromdiffusionsschicht (33) vorgesehen ist, die zwischen der epitaxialen LED-Struktur und der Gegenelektrode (39) ausgebildet ist.4. Light-emitting diode according to claim 1, characterized in that a current diffusion layer ( 33 ) is also provided, which is formed between the epitaxial LED structure and the counter electrode ( 39 ). 5. Lichtemittierende Diode nach Anspruch 1, dadurch gekennzeichnet, daß die Kleberschicht (46) eine Grundelektrode ist. 5. Light-emitting diode according to claim 1, characterized in that the adhesive layer ( 46 ) is a base electrode. 6. Lichtemittierende Diode nach Anspruch 1, dadurch gekennzeichnet, daß das transparente Material der Transparentmaterialschicht (43) aus leitenden Materialien wie ITO, Zinkoxid, Zinnoxid, Indiumoxid oder deren Kombination ausgewählt ist.6. Light-emitting diode according to claim 1, characterized in that the transparent material of the transparent material layer ( 43 ) is selected from conductive materials such as ITO, zinc oxide, tin oxide, indium oxide or a combination thereof. 7. Lichtemittierende Diode nach Anspruch 1, dadurch gekennzeichnet, daß das transparente Material der Transparentmaterialschicht (43) aus isolierendem Material wie Polymer, Quarz, Glas oder deren Kombination ausgewählt ist.7. Light-emitting diode according to claim 1, characterized in that the transparent material of the transparent material layer ( 43 ) is selected from insulating material such as polymer, quartz, glass or a combination thereof. 8. Lichtemittierende Diode nach Anspruch 1, dadurch gekennzeichnet, daß das permanente Substrat (47) aus einem Material mit guten Wärmeleiteigenschaften gebildet ist.8. Light-emitting diode according to claim 1, characterized in that the permanent substrate ( 47 ) is formed from a material with good thermal conductivity. 9. Lichtemittierende Diode nach Anspruch 8, dadurch gekennzeichnet, daß das permanente Substrat (47) aus einem Material gebildet ist, das aus Si, BN, AlN, Al2O3, MgO, MgO2 oder deren Kombination ausgewählt ist.9. Light-emitting diode according to claim 8, characterized in that the permanent substrate ( 47 ) is formed from a material which is selected from Si, BN, AlN, Al 2 O 3 , MgO, MgO 2 or a combination thereof. 10. Lichtemittierende Diode nach Anspruch 1, dadurch gekennzeichnet, daß die LED aus einer vertikalen LED und einer planaren LED ausgewählt ist.10. The light-emitting diode as claimed in claim 1, characterized, that the LED is selected from a vertical LED and a planar LED.
DE20202493U 2002-02-19 2002-02-19 Light emitting diode with improved brightness Expired - Lifetime DE20202493U1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE20202493U DE20202493U1 (en) 2002-02-19 2002-02-19 Light emitting diode with improved brightness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE20202493U DE20202493U1 (en) 2002-02-19 2002-02-19 Light emitting diode with improved brightness

Publications (1)

Publication Number Publication Date
DE20202493U1 true DE20202493U1 (en) 2002-06-20

Family

ID=7967930

Family Applications (1)

Application Number Title Priority Date Filing Date
DE20202493U Expired - Lifetime DE20202493U1 (en) 2002-02-19 2002-02-19 Light emitting diode with improved brightness

Country Status (1)

Country Link
DE (1) DE20202493U1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003052838A3 (en) * 2001-12-13 2004-05-27 Rensselaer Polytech Inst Light-emitting diode with planar omni-directional reflector
EP1530242A3 (en) * 2003-11-06 2009-06-24 Sumitomo Electric Industries, Ltd. Semiconductor light emitting device
DE102009034359A1 (en) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-contact and LED for the ultraviolet spectral range

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003052838A3 (en) * 2001-12-13 2004-05-27 Rensselaer Polytech Inst Light-emitting diode with planar omni-directional reflector
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
EP1530242A3 (en) * 2003-11-06 2009-06-24 Sumitomo Electric Industries, Ltd. Semiconductor light emitting device
DE102009034359A1 (en) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-contact and LED for the ultraviolet spectral range

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Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 20020725

R150 Term of protection extended to 6 years

Effective date: 20050125

R151 Term of protection extended to 8 years

Effective date: 20080122

R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033000000

Ipc: H01L0033140000

R152 Term of protection extended to 10 years

Effective date: 20100514

R071 Expiry of right
R071 Expiry of right